IC AND GATE 7408 specification sheet
Abstract: TOP CODE ABZH ABZK
Text: MAX8873T/S/R, MAX8874T/S/R Low-Dropout, 120mA Linear Regulators _General Description _Features The MAX8873T/S/R and MAX8874T/S/R low-dropout linear regulators operate from a +2.5V to +6.5V input range and deliver up to 120mA. A PMOS pass transistor allows the low, 82µA supply current to remain independent of load, making these devices ideal for
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MAX8873T/S/R,
MAX8874T/S/R
120mA
MAX8873T/S/R
120mA.
IC AND GATE 7408 specification sheet
TOP CODE ABZH
ABZK
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 4N70-R Preliminary Power MOSFET 4A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N70-R is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged
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4N70-R
4N70-R
O-220F1
QW-R502-A66
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35B DIODE
Abstract: mosfet motor dc 48v OM6218SP1
Text: OM6218SP1 DUAL 60V, LOW R DS on POWER MOSFET IN LOW PROFILE PLASTIC PACKAGE Dual Uncommitted Power MOSFET N-Channel, 60V, .01812 R ds(oii) Iff FEATURES « • • • • Two Uncommitted M O S F E T s In One Package Isolated Low Profile Package Low RDS(on)
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OM6218SP1
OM6218SP1
300fisec,
b7flT073
534-5776FAX
35B DIODE
mosfet motor dc 48v
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Untitled
Abstract: No abstract text available
Text: B U R R - B R O W N <i [ OPA621 ] Wideband Precision OPERATIONAL AMPLIFIER FEATURES APPLICATIONS • LOW NOISE: 2.3nV/VHz LOW NOISE PREAMPLIFIER • LOW DIFFERENTIAL GAIN/PHASE ERROR LOW NOISE DIFFERENTIAL AMPLIFIER • HIGH OUTPUT CURRENT: 150mA HIGH-RESOLUTION VIDEO
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OPA621
150mA
500MHz
OPA621
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PDF
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Untitled
Abstract: No abstract text available
Text: r r u u LT1573 m TECHNOLOGY Low D ro p o u t R e gu la to r Driver F€RTUR€S D C S C R IP TIO n • Low Cost Solution for High Current, Low Dropout Regulators ■ Fast Transient Response Needs Much Less Bulk Capacitance ■ Latching Overload Protection Minimizes
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LT1573
LT1575
LT1580/LT1581
LT1584/LT1585/LT1587
1573f
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PDF
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lt 860
Abstract: NESY240 Ot38
Text: NESY240 POWER MOSFET N CHANNEL REPETITIVE AVALANCHE RATINGS • LOW R,D S O N • LOW DRIVE REQUIREMENT • DYNAMIC d v /d t RATING A BSO LU T E M A X IM U M R A T IN G S (T c = 25 C unless otherw ise noted) PA R A M E T E R S / T E ST C O N D IT IO N S
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NESY240
O-257AA
794-i666
lt 860
NESY240
Ot38
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PDF
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Untitled
Abstract: No abstract text available
Text: SAfiYO New Product Low On-Resistance Power MOSFETs Low on-resistance Power MOSFETs {J-MOS VDSS:12V/20V/30V Series S a n y o P o w e r MOSFETs TJ-MOS S e r i e s j m e e t t h e m a r k e t n e e d s o f l o w e r v o l t a g e d r i v e a n d m i n i a t u r i z e d s u r f a c e
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2V/20V/30V
l/420
MT950216TR
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PDF
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Untitled
Abstract: No abstract text available
Text: r r u n _ LTC1538-AUX/LTC1539 m TECHNOLOGY Dual High E fficiency, Low Noise, Synchronous Step- D ow n S w itching Regulators FEAHJRES DESCRIPllOn • Maintains Constant Frequency at Low Output Currents ■ Dual N-Channel MOSFET Synchronous Drive ■ Programmable Fixed Frequency PLL Lockable
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LTC1538-AUX/LTC1539
LTC1439/LTC1438X
LT1510
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PDF
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k669 transistor
Abstract: k544 K932 transistor mosfet k544 k427 transistor k583 k427 K932 k222 mosfet k546
Text: SAfÊYO Small-signal Junction FETs/MOSFETs F e a tu re s Case O u tlin e s unit.'m m SANYO:SMCP 1 : S ource, 2 : Drá i n, 3 : Ga te * V e r y low n o is e f ig u r e * L arge |Y f s | * Low g a te le a k c u r r e n t * S m a ll-s iz e d package p e r m ittin g FET-used s e t s to be made s m a lle r
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250mm
Ratings/Ta-25
2SK2170UA)
2SK1069
2SK1332CV)
2SK209KH)
2SK2219CD)
T0-126LP
T0-220CI
T0-220ML
k669 transistor
k544
K932 transistor
mosfet k544
k427 transistor
k583
k427
K932
k222 mosfet
k546
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PDF
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Untitled
Abstract: No abstract text available
Text: Back to FETs IRFY240 POWER MOSFET N CHANNEL • REPETITIVE AVALANCHE RATINGS • LOW R DS 0 n • LOW DRIVE REQUIREM ENT • DYNAMIC d v / d t RATING A BSO LU T E M A X IM U M R A T IN G S (T c = 25 C unless otherw ise noted) P A R A M E T E R S / T E ST C O N D IT IO N S
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IRFY240
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PDF
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Untitled
Abstract: No abstract text available
Text: Back to FETs iZiA Q T NSG2649 POWER MOSFET N CHANNEL • REPETITIVE AVALANCHE RATINGS • LOW R DS 0 n • LOW DRIVE REQUIREM ENT • DYNAMIC d v / d t RATING A BSO LU T E M A X IM U M R A T IN G S (T c = 25 C unless otherw ise noted) P A R A M E T E R S / T E ST C O N D IT IO N S
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NSG2649
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PDF
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burr brown Heat sink
Abstract: No abstract text available
Text: BU R R - BROW N [ OPA628 1 Low Distortion Wideband OPERATIONAL AMPLIFIER FEATURES APPLICATIONS • EXCELLENT DIFFERENTIAL GAIN: 0.015% BROADCAST QUALITY VIDEO • EXCELLENT DIFFERENTIAL PHASE: 0.015° MEDICAL IMAGING • LOW DISTORTION: 90dB SFDR LOW NOISE PREAMPLIFIER
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OPA628
60dBm
160MHz
30MHz
OPA628
PA628
12-Bit,
burr brown Heat sink
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PDF
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Fet irfz44n
Abstract: No abstract text available
Text: PD - 91318B International IQ R Rectifier IR F R /U 1205 HEXFET Power MOSFET • • • • • Ultra Low O n-R esistance Surface M ount IRFR 1205 Straight Lead (IRFU 1205) Fast Switching Fully Avalanche Rated Vdss = 55V RüS(on) = 0.027Q |D = 44 A Description
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91318B
Fet irfz44n
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PDF
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LTC1429
Abstract: No abstract text available
Text: r r w m TECHNOLOGY FCRTURCS _ LTC1550/LTC1551 Low Noise, Switched C ap acito r Regulated Voltage Inverters D C S C R IP T IO n • Regulated Negative Voltage from a Single Positive Supply ■ Low Output Ripple: Less Than ImVp.p Typ ■ High Charge Pump Frequency: 900kHz Typ
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LTC1550/LTC1551
900kHz
1550/LTC1551
LTC1550
100mA
LTC1261
LTC1429
LTC1429
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PDF
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Untitled
Abstract: No abstract text available
Text: B U R R -B R O W N K M M OPA643 I Wideband Low Distortion OPERATIONAL AMPLIFIER FEATURES APPLICATIONS • • • • • • • • • • • • • • • • • LOW DISTORTION: -90dBc at 5MHz LOW NOISE: 1.8nV/VHz GAIN-BANDWIDTH: 1.5GHz STABLE IN GAINS > 5
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OPA643
-90dBc
12-BIT
OPA643
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PDF
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OPA65Q
Abstract: marking AE 5pin
Text: OPA650 B U R R - B R O W N <i [ ] Wideband, Low Power Voltage Feedback OPERATIONAL AMPLIFIER FEATURES DESCRIPTION • LOW POWER: 50mW The OPA650 is a low power, wideband voltage feed back operational amplifier. It features a high band width of 560MHz as well as a 12-bit settling time of
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OPA650
560MHz
-77dB
OPA650
560MHz
12-bit
OPA65Q
marking AE 5pin
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PDF
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Untitled
Abstract: No abstract text available
Text: B U R R -B R O W N E OPA628 1 Low Distortion Wideband OPERATIONAL AMPLIFIER FEATURES APPLICATIONS • EXCELLENT DIFFERENTIAL GAIN: 0.015% • BROADCAST QUALITY VIDEO • EXCELLENT DIFFERENTIAL PHASE: 0.015° • LOW DISTORTION: 90dB SFDR • MEDICAL IMAGING
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OPA628
60dBm
160MHz
30MHz
OPA628
ZZ182
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 91302C International IQ R Rectifier IR F R /U 4 1 0 5 HEXFET Power MOSFET • • • • • Ultra Low O n-R esistance Surface M ount IR FR 4105 Straight Lead (IRFU 4105) Fast Switching Fully Avalanche Rated V dss = 55V RüS(on) = 0.045Î2 Description
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91302C
MS-022-BE
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PDF
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diode smd yw
Abstract: SMD MARKING CODE 9b 2b
Text: In te r n a tio n a l IO R pd R e c tifie r 1 R p r e l im in a r y L M 9 . i 54 o S 1 9 0 2 HEXFET Power MOSFET • • • • Generation V Technology Micro6 Package Style Ultra Low Rds on N-Channel MOSFET Description Fifth Generation H E X F E T s from International Rectifier
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002b277
diode smd yw
SMD MARKING CODE 9b 2b
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PDF
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Untitled
Abstract: No abstract text available
Text: B U R R -B R O W N l u OPA65Q G i Wideband, Low Power Voltage Feedback OPERATIONAL AMPLIFIER FEATURES DESCRIPTION • LOW POWER: 50mW The OPA650 is a low power, wideband voltage feed back operational amplifier. It features a high band width of 560MHz as well as a 12-bit settling time of
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OPA650
560MHz
-77dBc
OPA650
560MHz
12-bit
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PDF
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C74 8pin
Abstract: No abstract text available
Text: \ APEX • u iothiiiiui H /B R ID G E M O TO R D R IV E R /A M P LIFIE R SA51 _ H T T P : / / W W W . A P E X M I C R Q T t i C H . C O M 800 546-APEX (800) 546-2739 FEATURES • LOW COST COMPLETE H-BRIDGE • SELF-CONTAINED SMART LOW SIDE/HIGHSIDE DRIVE
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546-APEX
28Vdc
70Vdc
C74 8pin
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PDF
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Untitled
Abstract: No abstract text available
Text: r r TECHNOLOGY u n _LTC1435A m High Efficiency Low Noise Synchronous Step-Down Switching Regulator FCRTURCS D C S C R IP TIO n • Dual N-Channel MOSFET Synchronous Drive ■ Programmable Fixed Frequency ■ Wide V|N Range: 3.5V to 36V Operation
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LTC1435A
300ns)
LTC1538-AUX
LTC1539
LTC1706-19
1435af
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PDF
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Untitled
Abstract: No abstract text available
Text: OPA65Q B U R R -B R O W N 1 I Wideband, Low Power Voltage Feedback OPERATIONAL AMPLIFIER FEATURES DESCRIPTION • LOW POWER: 50mW The OPA650 is a low power, wideband voltage feed back operational amplifier. It features a high band width of 560MHz as well as a 12-bit settling time of
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OCR Scan
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OPA65Q
OPA650
560MHz
12-bit
560MHz
-77dBc
11JMSER:
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PDF
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Untitled
Abstract: No abstract text available
Text: P D -93756 International 3BR Rectifier IRLML6401 HEXFET Power MOSFET • • • • • • Ultra Low O n-R esistance P-Channel M O SFET SO T-23 Footprint Low Profile <1.1 mm A vailable in Tape and Reel Fast Switching V Dss = -12V RüS(on) = 0.05Î2 Description
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IRLML6401
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