diode PIN 1
Abstract: No abstract text available
Text: OM6218SP1 DUAL 60V, LOW R DS on POWER MOSFET IN LOW PROFILE PLASTIC PACKAGE Dual U n c o m m i t t e d Power MOSFET N-Channel. 60V. .018U R Dsi0m FEATURES • Two Uncommitted MOSFETs In One Package • Isolated Low Profile Package • L o w R DS(on) • Low Conductive Loss/Low Gate Charge
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OM6218SP1
OM6218SP1
diode PIN 1
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PDF
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100A 1000V mosfet
Abstract: H-bridge Mosfet LPM2M025-100 LPM2M035-100 LPM2M040-060 LPM2M060-060 LPM2M120-030 LPM2M150-010 LPM2M200-006 LPM2M200-010
Text: tSENSITRON LPMxMxxx-xxx SEMICONDUCTOR STANDARD LOW COST HERMETIC MOSFET MODULES FEATURES: • High Power Density • Low Drain to Source Resistance R DS(on • Low Thermal Resistance (R θJC) INDUSTRIAL MOSFET PRODUCT MAP ID (Amps) CONFIGURATION VDSS (V)
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LPM2M200-006
LPM2M250-006
LPM2M150-010
LPM2M200-010
LPM2M080-030
LPM2M120-030
LPM2M040-060
LPM2M060-060
LPM2M025-100
LPM2M035-100
100A 1000V mosfet
H-bridge Mosfet
LPM2M025-100
LPM2M035-100
LPM2M040-060
LPM2M060-060
LPM2M120-030
LPM2M150-010
LPM2M200-006
LPM2M200-010
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PDF
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Untitled
Abstract: No abstract text available
Text: OM55N10NK OM75N05NK OM6ONIONK OM75N06NK LOW VOLTAGE, LOW IN A TO-3 PACKAGE R DS on POWER MOSFETS FEATURES • • • • TO-3 Hermetic Package, .060 Dia. Leads Ultra Low R DS(on) Low Conductive Loss/Low Gate Charge Available Screened To MIL-S-19500, TX, TX V And S Levels
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OM55N10NK
OM75N05NK
OM75N06NK
MIL-S-19500,
55N10NK
60N10NK
75N06NK
75N05NK
025rom
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PDF
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35B DIODE
Abstract: mosfet motor dc 48v OM6218SP1
Text: OM6218SP1 DUAL 60V, LOW R DS on POWER MOSFET IN LOW PROFILE PLASTIC PACKAGE Dual Uncommitted Power MOSFET N-Channel, 60V, .01812 R ds(oii) Iff FEATURES « • • • • Two Uncommitted M O S F E T s In One Package Isolated Low Profile Package Low RDS(on)
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OCR Scan
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OM6218SP1
OM6218SP1
300fisec,
b7flT073
534-5776FAX
35B DIODE
mosfet motor dc 48v
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PDF
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Untitled
Abstract: No abstract text available
Text: B U R R - B R O W N <i [ OPA621 ] Wideband Precision OPERATIONAL AMPLIFIER FEATURES APPLICATIONS • LOW NOISE: 2.3nV/VHz LOW NOISE PREAMPLIFIER • LOW DIFFERENTIAL GAIN/PHASE ERROR LOW NOISE DIFFERENTIAL AMPLIFIER • HIGH OUTPUT CURRENT: 150mA HIGH-RESOLUTION VIDEO
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OCR Scan
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OPA621
150mA
500MHz
OPA621
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PDF
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mosfet 4812
Abstract: TB370 MS-012AA AN7254 AN7260 ITF87072DK8T 1TF87072DK8T
Text: in t e ITF87072DK8T r r ii 6A, 20V, 0.037 Ohm, Dual P-Channel, Low Logic Level, Power MOSFET m i January. Data Sheet File Number 4812.1 Features • Ultra Low O n -R e s is ta n c e Packaging S 0 8 JEDEC MS-012AA ‘ r DS(ON) = 0 .0 3 7 i2 , VGS = - 4 . 5 V
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MS-012AA)
ITF87072DK8T
MS-012AA
330mm
EIA-481
mosfet 4812
TB370
MS-012AA
AN7254
AN7260
ITF87072DK8T
1TF87072DK8T
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PDF
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Untitled
Abstract: No abstract text available
Text: r r u u LT1573 m TECHNOLOGY Low D ro p o u t R e gu la to r Driver F€RTUR€S D C S C R IP TIO n • Low Cost Solution for High Current, Low Dropout Regulators ■ Fast Transient Response Needs Much Less Bulk Capacitance ■ Latching Overload Protection Minimizes
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LT1573
LT1575
LT1580/LT1581
LT1584/LT1585/LT1587
1573f
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PDF
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Untitled
Abstract: No abstract text available
Text: International lo g Rectifier HEXFET Power MOSFET • • • • • • • 4855452 PD-9.754 Q 01S454 318 H I N R IRFP064 INTERNATIO NAL R E C T IF IE R Dynamic dv/dt Rating Repetitive Avalanche Rated Ultra-Low On-Resistance Very Low Thermal Resistance
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01S454
IRFP064
O-247
levFP064
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PDF
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LCD TV SMPS circuit
Abstract: IXDD 8pin dual gate driver Telfon Tube ixdn 55 n 120 d1 D-68623 MS-001 IXYS IXDI 430 IN509
Text: L O W- S I D E G AT E D R I V E R I C S F R O M 2 A T O 1 4 A N E W P R O D U C T B R I E F Low-Side Gate Driver ICs from 2A to 14A NEXT GENERATION IXD_5XX LOW-SIDE GATE DRIVERS WITH IMPROVED COST-EFFICIENCY, CIRCUIT DENSITY AND RUGGEDNESS FOR MOSFETs AND IGBTs
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MS-001
D-68623
LCD TV SMPS circuit
IXDD
8pin dual gate driver
Telfon Tube
ixdn 55 n 120 d1
IXYS IXDI 430
IN509
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PDF
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JESD22
Abstract: No abstract text available
Text: BSF024N03LT3 G OptiMOSTM3 Power-MOSFET Product Summary Features • Optimized for high switching frequency DC/DC converter • Very low on-resistance R DS on V DS 30 V R DS(on),max 2.4 mΩ ID 106 A • Excellent gate charge x R DS(on) product (FOM) • Low parasitic inductance
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BSF024N03LT3
JESD22
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BSB017N03LX3
Abstract: JESD22
Text: BSB017N03LX3 G OptiMOSTM3 Power-MOSFET Product Summary Features • Optimized for high switching frequency DC/DC converter • Very low on-resistance R DS on V DS 30 V R DS(on),max 1.7 mΩ ID 147 A • Excellent gate charge x R DS(on) product (FOM) • Low parasitic inductance
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BSB017N03LX3
JESD22
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PDF
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Untitled
Abstract: No abstract text available
Text: BSF024N03LT3 G OptiMOSTM3 Power-MOSFET Product Summary Features • Optimized for high switching frequency DC/DC converter • Very low on-resistance R DS on V DS 30 V R DS(on),max 2.4 mΩ ID 106 A • Excellent gate charge x R DS(on) product (FOM) • Low parasitic inductance
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BSF024N03LT3
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Untitled
Abstract: No abstract text available
Text: BSB012N03LX3 G OptiMOSTM3 Power-MOSFET Product Summary Features • Optimized for high switching frequency DC/DC converter • Very low on-resistance R DS on V DS 30 V R DS(on),max 1.2 mΩ ID 180 A • Excellent gate charge x R DS(on) product (FOM) • Low parasitic inductance
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BSB012N03LX3
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Untitled
Abstract: No abstract text available
Text: OPA65Q B U R R - B R O W N <i [ ] Wideband, Low Power Voltage Feedback OPERATIONAL AMPLIFIER FEATURES LOW POWER: 50mW UNITY GAIN STABLE BANDWIDTH: 560MHz LOW HARMONICS: -77dB c at 5MHz FAST SETTLING TIME: 20ns to 0.01% LOW INPUT BIAS CURRENT: 5|iA DIFFERENTIAL GAIN/PHASE ERROR:
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OPA65Q
560MHz
-77dB
OPA650
560MHz
12-bit
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PDF
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JESD22
Abstract: No abstract text available
Text: BSB015N04NX3 G OptiMOSTM3 Power-MOSFET Product Summary Features • Optimized for high switching frequency DC/DC converter • Very low on-resistance R DS on V DS 40 V R DS(on),max 1.5 mΩ ID 180 A • Excellent gate charge x R DS(on) product (FOM) • Low parasitic inductance
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BSB015N04NX3
JESD22
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PDF
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BSF050N03LQ3
Abstract: JESD22
Text: BSF050N03LQ3 G OptiMOSTM3 Power-MOSFET Product Summary Features • Optimized for high switching frequency DC/DC converter • Very low on-resistance R DS on V DS 30 V R DS(on),max 5 mΩ ID 60 A • Excellent gate charge x R DS(on) product (FOM) • Low parasitic inductance
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BSF050N03LQ3
JESD22
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PS7801-1A-F3
Abstract: PS7802-1A PS7802-1A-F3 PS7802-1A-F4
Text: NEC's 4-PIN ULTRA SMALL FLAT-LEAD, LOW OUTPUT CAPACITANCE PS7802-1A 1-CH OPTICAL COUPLED MOSFET FEATURES DESCRIPTION • LOW C x R : C x R = 12.6 pF • Ω NEC's PS7802-1A is a low output capacitance solid state relay containing GaAs LEDs on the light emitting side input
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PS7802-1A
PS7802-1A
PS72xx
PS7801-1A-F3
PS7802-1A-F3
PS7802-1A-F4
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PDF
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datasheet LED infrared
Abstract: mos relay PS7200A-1A PS7200A-1A-E3 PS7200A-1A-E4 PS7200A-1A-F3 PS7200A-1A-F4
Text: 4 PIN SOP 3.0 pF LOW OUTPUT CAPACITANCE 1-CH OPTICAL COUPLED MOSFET PS7200A-1A FEATURES DESCRIPTION • LOW C X R: C X R = 30 pF • Ω PS7200A-1A is a low output capacitance solid state relay containing a GaAs LED on the light emitting side input side
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PS7200A-1A
PS7200A-1A
datasheet LED infrared
mos relay
PS7200A-1A-E3
PS7200A-1A-E4
PS7200A-1A-F3
PS7200A-1A-F4
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PDF
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PS7200R-1A
Abstract: PS7200R-1A-E3 PS7200R-1A-E4 PS7200R-1A-F3 PS7200R-1A-F4
Text: NEC's 4 PIN SOP, 1.1 pF LOW OUTPUT CAPACITANCE 1-ch OPTICAL COUPLED MOSFET PS7200R-1A FEATURES DESCRIPTION • LOW C X R: C X R = 11 pF • Ω NEC's PS7200R-1A is a low output capacitance solid state relay containing a GaAs LED on the light emitting side input
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PS7200R-1A
PS7200R-1A
PS7200R-1A-E3
PS7200R-1A-E4
PS7200R-1A-F3
PS7200R-1A-F4
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PDF
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PS7801-1A
Abstract: PS7801-1A-F3 PS7801-A-F3 PS7801-A-F4 NEC RELAY UC
Text: NEC's 4-PIN ULTRA SMALL FLAT-LEAD, LOW OUTPUT CAPACITANCE PS7801-1A 1-CH OPTICAL COUPLED MOSFET FEATURES DESCRIPTION • LOW C x R : C x R = 12.6 pF • Ω NEC's PS7801-1A is a low output capacitance solid state relay containing GaAs LEDs on the light emitting side input
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PS7801-1A
PS7801-1A
PS72xx
PS7801-1A-F3
PS7801-A-F3
PS7801-A-F4
NEC RELAY UC
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PDF
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H1251
Abstract: 12v step-down transformer files Bobbin EE 16 LTC1439 nichicon gw
Text: r r w m _ LTC1438/LTC1439 TECHNOLOGY Dual High Efficiency, Low Noise, Synchronous Step-Down Switching Regulators reniURCS DCSCRIPTIOn • Maintains Constant Frequency at Low Output Currents ■ Dual N-Channel MOSFET Synchronous Drive ■ Programmable Fixed Frequency PLL Lockable
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LTC1438/LTC1439
1438/LTC1439
400kHz
16-Pin
LTC1436/LTC1436-PLL/
LTC1437
LT1510
LTC1538-AUX
LTC1539
143891a
H1251
12v step-down transformer files
Bobbin EE 16
LTC1439
nichicon gw
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PDF
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Untitled
Abstract: No abstract text available
Text: B U R R -B R O W N < • OPA642 | Wideband Low Distortion OPERATIONAL AMPLIFIER FEATURES APPLICATIONS • LOW DISTORTION: -95dBc at 5MHz • ADC/DAC GAIN AMPLIFIER • UNITY-GAIN BANDWIDTH: 450MHz • UNITY-GAIN STABLE • LOW DISTORTION COMMUNICATIONS
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OPA642
-95dBc
450MHz
12-BIT
OPA642
17313b5
GD24G55
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PDF
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rectifier d20 60
Abstract: No abstract text available
Text: BSF083N03LQ G OptiMOSTM2 Power-MOSFET Product Summary Features • Optimized for high switching frequency DC/DC converter • Very low on-resistance R DS on V DS 30 V R DS(on),max 8.3 mΩ ID 53 A • Excellent gate charge x R DS(on) product (FOM) • Low profile (<0.7 mm)
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BSF083N03LQ
rectifier d20 60
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PDF
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Untitled
Abstract: No abstract text available
Text: OMS420 OMS52Q QMS620 3 PHASE, LOW VOLTAGE, LOW RDS on , MOSFET BRIDGE CIRCUIT IN A PLASTIC PACKAGE T h r e e P h a s e . 2 0 0 Volt. 15 To 45 A m p B r i d g e W it h C u r r e n t A n d T e m p e r a t u r e S e n s i n g In A L o w Profile P a c k a g e
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OMS420
OMS52Q
QMS620
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PDF
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