LOW R MOSFET Search Results

diode PIN 1

Contextual Info: OM6218SP1 DUAL 60V, LOW R DS on POWER MOSFET IN LOW PROFILE PLASTIC PACKAGE Dual U n c o m m i t t e d Power MOSFET N-Channel. 60V. .018U R Dsi0m FEATURES • Two Uncommitted MOSFETs In One Package • Isolated Low Profile Package • L o w R DS(on) • Low Conductive Loss/Low Gate Charge

100A 1000V mosfet

Abstract: H-bridge Mosfet LPM2M025-100 LPM2M035-100 LPM2M040-060 LPM2M060-060 LPM2M120-030 LPM2M150-010 LPM2M200-006 LPM2M200-010
Contextual Info: tSENSITRON LPMxMxxx-xxx SEMICONDUCTOR STANDARD LOW COST HERMETIC MOSFET MODULES FEATURES: • High Power Density • Low Drain to Source Resistance R DS(on • Low Thermal Resistance (R θJC) INDUSTRIAL MOSFET PRODUCT MAP ID (Amps) CONFIGURATION VDSS (V)

Contextual Info: OM55N10NK OM75N05NK OM6ONIONK OM75N06NK LOW VOLTAGE, LOW IN A TO-3 PACKAGE R DS on POWER MOSFETS FEATURES • • • • TO-3 Hermetic Package, .060 Dia. Leads Ultra Low R DS(on) Low Conductive Loss/Low Gate Charge Available Screened To MIL-S-19500, TX, TX V And S Levels

35B DIODE

Abstract: mosfet motor dc 48v OM6218SP1
Contextual Info: OM6218SP1 DUAL 60V, LOW R DS on POWER MOSFET IN LOW PROFILE PLASTIC PACKAGE Dual Uncommitted Power MOSFET N-Channel, 60V, .01812 R ds(oii) Iff FEATURES « • • • • Two Uncommitted M O S F E T s In One Package Isolated Low Profile Package Low RDS(on)

Contextual Info: B U R R - B R O W N <i [ OPA621 ] Wideband Precision OPERATIONAL AMPLIFIER FEATURES APPLICATIONS • LOW NOISE: 2.3nV/VHz LOW NOISE PREAMPLIFIER • LOW DIFFERENTIAL GAIN/PHASE ERROR LOW NOISE DIFFERENTIAL AMPLIFIER • HIGH OUTPUT CURRENT: 150mA HIGH-RESOLUTION VIDEO

mosfet 4812

Abstract: TB370 MS-012AA AN7254 AN7260 ITF87072DK8T 1TF87072DK8T
Contextual Info: in t e ITF87072DK8T r r ii 6A, 20V, 0.037 Ohm, Dual P-Channel, Low Logic Level, Power MOSFET m i January. Data Sheet File Number 4812.1 Features • Ultra Low O n -R e s is ta n c e Packaging S 0 8 JEDEC MS-012AA ‘ r DS(ON) = 0 .0 3 7 i2 , VGS = - 4 . 5 V

Contextual Info: r r u u LT1573 m TECHNOLOGY Low D ro p o u t R e gu la to r Driver F€RTUR€S D C S C R IP TIO n • Low Cost Solution for High Current, Low Dropout Regulators ■ Fast Transient Response Needs Much Less Bulk Capacitance ■ Latching Overload Protection Minimizes

Contextual Info: International lo g Rectifier HEXFET Power MOSFET • • • • • • • 4855452 PD-9.754 Q 01S454 318 H I N R IRFP064 INTERNATIO NAL R E C T IF IE R Dynamic dv/dt Rating Repetitive Avalanche Rated Ultra-Low On-Resistance Very Low Thermal Resistance

LCD TV SMPS circuit

Abstract: IXDD 8pin dual gate driver Telfon Tube ixdn 55 n 120 d1 D-68623 MS-001 IXYS IXDI 430 IN509
Contextual Info: L O W- S I D E G AT E D R I V E R I C S F R O M 2 A T O 1 4 A N E W P R O D U C T B R I E F Low-Side Gate Driver ICs from 2A to 14A NEXT GENERATION IXD_5XX LOW-SIDE GATE DRIVERS WITH IMPROVED COST-EFFICIENCY, CIRCUIT DENSITY AND RUGGEDNESS FOR MOSFETs AND IGBTs

JESD22

Contextual Info: BSF024N03LT3 G OptiMOSTM3 Power-MOSFET Product Summary Features • Optimized for high switching frequency DC/DC converter • Very low on-resistance R DS on V DS 30 V R DS(on),max 2.4 mΩ ID 106 A • Excellent gate charge x R DS(on) product (FOM) • Low parasitic inductance

BSB017N03LX3

Abstract: JESD22
Contextual Info: BSB017N03LX3 G OptiMOSTM3 Power-MOSFET Product Summary Features • Optimized for high switching frequency DC/DC converter • Very low on-resistance R DS on V DS 30 V R DS(on),max 1.7 mΩ ID 147 A • Excellent gate charge x R DS(on) product (FOM) • Low parasitic inductance

Contextual Info: BSF024N03LT3 G OptiMOSTM3 Power-MOSFET Product Summary Features • Optimized for high switching frequency DC/DC converter • Very low on-resistance R DS on V DS 30 V R DS(on),max 2.4 mΩ ID 106 A • Excellent gate charge x R DS(on) product (FOM) • Low parasitic inductance

Contextual Info: BSB012N03LX3 G OptiMOSTM3 Power-MOSFET Product Summary Features • Optimized for high switching frequency DC/DC converter • Very low on-resistance R DS on V DS 30 V R DS(on),max 1.2 mΩ ID 180 A • Excellent gate charge x R DS(on) product (FOM) • Low parasitic inductance

Contextual Info: OPA65Q B U R R - B R O W N <i [ ] Wideband, Low Power Voltage Feedback OPERATIONAL AMPLIFIER FEATURES LOW POWER: 50mW UNITY GAIN STABLE BANDWIDTH: 560MHz LOW HARMONICS: -77dB c at 5MHz FAST SETTLING TIME: 20ns to 0.01% LOW INPUT BIAS CURRENT: 5|iA DIFFERENTIAL GAIN/PHASE ERROR:

JESD22

Contextual Info: BSB015N04NX3 G OptiMOSTM3 Power-MOSFET Product Summary Features • Optimized for high switching frequency DC/DC converter • Very low on-resistance R DS on V DS 40 V R DS(on),max 1.5 mΩ ID 180 A • Excellent gate charge x R DS(on) product (FOM) • Low parasitic inductance

BSF050N03LQ3

Abstract: JESD22
Contextual Info: BSF050N03LQ3 G OptiMOSTM3 Power-MOSFET Product Summary Features • Optimized for high switching frequency DC/DC converter • Very low on-resistance R DS on V DS 30 V R DS(on),max 5 mΩ ID 60 A • Excellent gate charge x R DS(on) product (FOM) • Low parasitic inductance

PS7801-1A-F3

Abstract: PS7802-1A PS7802-1A-F3 PS7802-1A-F4
Contextual Info: NEC's 4-PIN ULTRA SMALL FLAT-LEAD, LOW OUTPUT CAPACITANCE PS7802-1A 1-CH OPTICAL COUPLED MOSFET FEATURES DESCRIPTION • LOW C x R : C x R = 12.6 pF • Ω NEC's PS7802-1A is a low output capacitance solid state relay containing GaAs LEDs on the light emitting side input

datasheet LED infrared

Abstract: mos relay PS7200A-1A PS7200A-1A-E3 PS7200A-1A-E4 PS7200A-1A-F3 PS7200A-1A-F4
Contextual Info: 4 PIN SOP 3.0 pF LOW OUTPUT CAPACITANCE 1-CH OPTICAL COUPLED MOSFET PS7200A-1A FEATURES DESCRIPTION • LOW C X R: C X R = 30 pF • Ω PS7200A-1A is a low output capacitance solid state relay containing a GaAs LED on the light emitting side input side

PS7200R-1A

Abstract: PS7200R-1A-E3 PS7200R-1A-E4 PS7200R-1A-F3 PS7200R-1A-F4
Contextual Info: NEC's 4 PIN SOP, 1.1 pF LOW OUTPUT CAPACITANCE 1-ch OPTICAL COUPLED MOSFET PS7200R-1A FEATURES DESCRIPTION • LOW C X R: C X R = 11 pF • Ω NEC's PS7200R-1A is a low output capacitance solid state relay containing a GaAs LED on the light emitting side input

PS7801-1A

Abstract: PS7801-1A-F3 PS7801-A-F3 PS7801-A-F4 NEC RELAY UC
Contextual Info: NEC's 4-PIN ULTRA SMALL FLAT-LEAD, LOW OUTPUT CAPACITANCE PS7801-1A 1-CH OPTICAL COUPLED MOSFET FEATURES DESCRIPTION • LOW C x R : C x R = 12.6 pF • Ω NEC's PS7801-1A is a low output capacitance solid state relay containing GaAs LEDs on the light emitting side input

H1251

Abstract: 12v step-down transformer files Bobbin EE 16 LTC1439 nichicon gw
Contextual Info: r r w m _ LTC1438/LTC1439 TECHNOLOGY Dual High Efficiency, Low Noise, Synchronous Step-Down Switching Regulators reniURCS DCSCRIPTIOn • Maintains Constant Frequency at Low Output Currents ■ Dual N-Channel MOSFET Synchronous Drive ■ Programmable Fixed Frequency PLL Lockable

Contextual Info: B U R R -B R O W N < • OPA642 | Wideband Low Distortion OPERATIONAL AMPLIFIER FEATURES APPLICATIONS • LOW DISTORTION: -95dBc at 5MHz • ADC/DAC GAIN AMPLIFIER • UNITY-GAIN BANDWIDTH: 450MHz • UNITY-GAIN STABLE • LOW DISTORTION COMMUNICATIONS

rectifier d20 60

Contextual Info: BSF083N03LQ G OptiMOSTM2 Power-MOSFET Product Summary Features • Optimized for high switching frequency DC/DC converter • Very low on-resistance R DS on V DS 30 V R DS(on),max 8.3 mΩ ID 53 A • Excellent gate charge x R DS(on) product (FOM) • Low profile (<0.7 mm)

Contextual Info: OMS420 OMS52Q QMS620 3 PHASE, LOW VOLTAGE, LOW RDS on , MOSFET BRIDGE CIRCUIT IN A PLASTIC PACKAGE T h r e e P h a s e . 2 0 0 Volt. 15 To 45 A m p B r i d g e W it h C u r r e n t A n d T e m p e r a t u r e S e n s i n g In A L o w Profile P a c k a g e