LOW NOISE VHF AMP TRANSISTOR Search Results

NTE313

Contextual Info: NTE313 Silicon NPN Transistor High Gain, Low Noise, VHF Mixer and VHF/RF Amp Description: The NTE 313 is a silicon NPN transistor specifically designed for VHF mixer and VHF/RF amplifier applications. This device features high power gain, low noise, and excellent forward AGC characteristics.

NTE2643

Contextual Info: NTE2643 Silicon NPN Transistor, VHF/UHF Low Noise Amp Surface Mount Features: D Low Noise Figure, High Gain D NF = 1.1dB, |S21e|2 = 13dB (f = 1GHz) Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V

NTE15

Contextual Info: NTE15 Silicon NPN Transistor VHF Amp, Mixer, Oscillator, UHF OSC Features: D High Transition Frequency: fT = 1.1GHz D Low Base Resistance and High Gain D Excellent Noise Characteristics Applications: D VHF Mixers and Oscillators D UHF Oscillators Absolute Maximum Ratings: TA = +25°C unless otherwise specified

2SC5227

Abstract: EN5034 IC marking jw marking S221 JB1 MARKING
Contextual Info: Ordering number:EN5034 N”5034 2SC5227 ¡I NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise Amp Applications F eatures • Low noise : NF = 1.0dB typ f= 1GHz . - High gain: | S21e I 2= 12dB typ (f= 1GHz). • High cutoff frequency : fx=7GHztyp.

Contextual Info: EC3H07B NPN Epitaxial Planar Type Silicon Transistor For VHF band low-noise Amp and Oscillation Preliminary specifications TENTATIVE Features and applications • Low noise : NF=1.5dB typ f=2GHz • High cut-off frequency : fT=10GHz typ (VCE=1V) : fT=12.5GHz typ (VCE=3V)

2SC4864

Abstract: sanyo lc 15011 ZS22 ic 3586
Contextual Info: Ordering number : EN 4 5 8 3 SAÊYO i No.4583 _ 2SC4864 NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise Amp Applications Features • Low noise : NF = l.ldB typ f=lGHz •High gain: I S21e I 2= lldB typ (f= 1GHz)

NTE23

Contextual Info: NTE23 Silicon NPN Transistor Ultra High Frequency Amp Description: The NTE23 is suitable for a low noise amplifier in the VHF to UHF band. Features: D Low Noise Figure: NF 3.0dB Typ. @ f = 500MHz D High Power Gain: Gpe 15dB Typ. @ f = 500MHz D High Cutoff Frequency: fT = 2.0GHz Typ

2SC4931

Abstract: ha 0451 55 ic 4553 markingB1 CQ 527
Contextual Info: O rdering num ber: EN5295A N°5295A II 2SC4931 NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise Amp Applications Features • Low noise : NF = 1.2dB typ f= 1GHz . • High gain : I S21e I 2= 13dB typ (f= 1GHz). • High cutoff frequency : fx = 9.0GHz typ.

MARKING AJ5

Abstract: 2SC4867 ZS22
Contextual Info: Ordering number: E N 4656 No.4856 i II 2SC4867 NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise Amp Applications F eatures • Low noise : NF = 1.2dB typ f= 1GHz . • High gain: I S21e I 2= 13dB typ (f=lGHz). • High cutoff frequency : fr = 9.0GHz typ.

JR 3610

Abstract: transistor cq 529 MARKING C7 2SC5231 ci 4073
Contextual Info: O rd e rin g n u m b e r: EN 5036A NO.5036A SAXYO i _2SC5231 NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise Amp Applications F eatures • Low noise : N F= l.OdB typ f= 1GHz . •High gain: I S21e I 2= 12dB typ (f= lGIIz).

transistor 5633

Abstract: 2SC5230 ZS21 TA-0242 S211-S S211S
Contextual Info: Ordering number : EN 5046 No.5046 SAXYO i 2SC5230 II NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise Amp Applications F eatu res • Low noise : NF = l.OdB typ f= 1GHz . •High gain: I S21e I 2= 10.5dB typ (f= 1GHz). • High cutoff frequency : fx = 6.5GHz typ.

c 4977 transistor

Abstract: TRANSISTOR C 5706 CQ 734 2SC4868 5P J TRANSISTOR MARKING use of ic 4094 transistor on 4977
Contextual Info: O rdering n u m b e r:EN5043 N°-5043 II 2SC4868 NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-noise Amp Applications Features • Low noise : NF = 1.2dB typ f= IGIiz . •High gain: I S21e I 2= 13dB typ (f= 1GHz). •High cutoff frequency : f? = 9.0GHz typ.

57GHz

Abstract: Transistor KU 607 9484 transistor 2SC5228 marking 9365
Contextual Info: Ordering number: EN 5035 No.5035 ¡I 2SC5228 NPN Epitaxial Planar Silicon Transistor i VHF to UHF Wide-Band Low-Noise Amp Applications F e a tu re s •Low noise : NF = l.OdB typ f= 1GHz . • High gain : I S21e I 2= 13.5dB typ (f = 1GHz). • High cutoff frequency : fr = 7GHz typ.

J31C

Abstract: transistor 9ct 2SC4865 ZS22 IC A 2388 ic 4072 npn 9ct
Contextual Info: Ordering number: EN4760 No.4760 i II_2SC4865 NPN Epitaxial Planar Silicon Transistor SAXYO i VHF to UHF Wide-Band Low-Noise Amp Applications F e a tu re s • Lownoise : NF = l.ld B typ f=lGH z . •H igh gain: 1 S21e I 2= 12.5dB typ (f=lGHz).

2SK543

Contextual Info: SANYO SEMICONDUCTOR CORP SSE D 7*n7Q7b OOObTSO 2SK543 7 T-31-ZS ♦ N -C h an n el M O S Silicon FET 2024A FM Tuner, VHF-Band Amp Applications 1791C Features . Low noise. NF=1.8dB typ f=100MHz • High power gain. PG=27dB typ(f=100MHz) . Small reverse transfer capacitance. cras=0.035pF(VDS=10V,f=1MHz)

2SK543

Abstract: transistor fet 2062
Contextual Info: SANYO SEMICONDUCTOR 2SK543 CORP SSE D 7*n7Q7b OOObTSO 7 T-31-ZS ♦ N -C h an n el M O S Silicon FET 2024A FM Tuner, VHF-Band Amp Applications 1791C Features . Low noise. NF=1.8dB typ f=100MHz • High power gain. PG=27dB typ(f=100MHz) . Small reverse transfer capacitance. cras=0.035pF(VDS=10V,f=1MHz)

MT3S111P

Abstract: 2SC3136 2SC4250FV TIM0910-8 TA4029CTC tim8996-30 TA4029 TMD1925-3 2SC5066 3SK293
Contextual Info: Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors z 280 Radio-Frequency Small-Signal FETs z 283 Radio-Frequency Power MOSFETs z 284 Radio-Frequency Bipolar Power Transistors z 284 Radio-Frequency Diodes z 285 Small-Signal MMICs Radio-Frequency Cell Packs z 287

MT4S300T

Abstract: TGI0910-50 MT3S111P 2SC3136 S8850AF TA4032FT MT4S300U VHF-UHF Band oscillator 2sc5108 MT4S301T
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs Radio-Frequency Diodes Small-Signal MMICs Radio-Frequency Cell Packs Microwave Semiconductors

ECG18

Abstract: 2T202 ECG10 # Frequency at which common emitter current gain is 70.0 of low frequency gain T17 amp ECG29 # Frequency at which common emitter current gain is 70.0 of low frequency gain 1-50 T28A ecg32
Contextual Info: Transistors Bi-Polar Types Maximum Ratings at Tc = 25°C Unless Otherwise Noted Collector To Base Volts b v C bo Description and Application ECG Type C o lle c to r T o E m itter V o lts B a s e to E m itter V o lts BVc e o b v ebo Max. Collector Current

Contextual Info: FIELD EFFECT TRANSISTORS FET NTE Type No. Polarity and Material Description and Application Case Style Dlag. No. Voltage Gate to Source Min (Volta) Cutoff Voltage Gate to Source Max(OFF) (Volta) BV q s s Drain Current Zero-Gate Min-Max (mA) Drain Current

300 Amp mosfet

Abstract: mosfet 400 amp MOSFET FOR 100khz SWITCHING APPLICATIONS 50 Amp Mosfet dual jfet vhf jfet 133 jfet transistor mosfet amp DUAL JFET Pch low voltage mosfet switch 3 amp
Contextual Info: FIELD EFFECT TRANSISTORS FET NTE Type No. Polarity and Material Description and Application 132 JFET N-CH 133 JFET N-CH 221 Dual Gate MOSFET N-CH 222 Dual Gate MOSFET N-CH 312 JFET N-CH JFET P-CH 326 451 452 JFET N-CH JFET N-CH 454 Dual Gate MOSFET N-CH

transistor t18 FET

Abstract: fet preamp mp sot 23 resistor 47k ECG2363 ECG2371 ECG2406 ECG2366 PNP UHF transistor ECG2364
Contextual Info: Transistors cont'd ECG Type Description and Application (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base Volts bvcbo Collector To Emitter Volts b v Ceo Base to Emitter Volts bvebo M ax. Collector Current Iç Amps Max. Device Dlss. PD

resistor 22k

Abstract: mp sot 23 resistor 10k RF Transistors sot-23 ECG2406 resistor 47k resistor 2.2k ECG2426 ECG2401 ECG2402
Contextual Info: PHILIPS E C G INC SME D Transistors cont'd ECG Type Description and Application • bbS3T2fl OOD Vlbl ITS H E C 6 (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base Volts Collector To Emitter Volts Base to Emitter Volts BV c b O b v Ceo

ECG2406

Abstract: ECG399 resistor 47k mp sot 23 ECG2364 ECG2368 resistor 4.7k SP SOT23 ECG2363 ECG2366
Contextual Info: Transistors cont'd ECG Type Description and Application (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Basa Volts bvcbo Collector To Emitter Volts bv C eo Basa to Emitter Volts Max. Collector Current I j Amps b v eb o Max. Device Diss. PD