LOW NOISE TRANSISTORS VHF Search Results

SOT143 L03

Abstract: L0523 D2030 L03 sot143 yg 2025 microstripline FR4 AT-30511 AT-31011 W02 SOT23 ATF-10236
Contextual Info: 900 and 2400 MHz Amplifiers Using the AT-3 Series Low Noise Silicon Bipolar Transistors Application Note AN 1085 1. Introduction Discrete transistors offer low cost solutions for commercial applications in the VHF through microwave frequency range. Today’s silicon bipolar transistors offer state-ofthe-art noise figure and gain performance with low power

MB4213

Abstract: F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD
Contextual Info: Table of Contents Index 5 SMD Transistors Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal Darlington Transistors

HP346A

Abstract: D2030 5091-9311E 47433 W02 SOT23 AT-30511 AT-31011 AT-32033 ATF-10236 Hewlett-Packard transistor microwave
Contextual Info: 900 and 2400 MHz Amplifiers Using the AT-3 Series Low Noise Silicon Bipolar Transistors Application Note 1085 1. Introduction Discrete transistors offer low cost solutions for commercial applications in the VHF through microwave frequency range. Today’s silicon bipolar transistors

yg 2025

Abstract: HP346A 2305 isolator AT-30511 AT-31011 AT-32033 ATF-10236 AN-G004 equivalent transistor K 3532
Contextual Info: 900 and 2400 MHz Amplifiers Using the AT-3 Series Low Noise Silicon Bipolar Transistors Application Note 1085 1. Introduction Discrete transistors offer low cost solutions for commercial applications in the VHF through microwave frequency range. Today’s silicon bipolar transistors

MA42056

Abstract: 42056
Contextual Info: Silicon Low Noise Bipolar Transistors MA42050 Series Description Nominal fT - 1.8 GHz Nominal Current Range - 1 to 5 mA Iq Max. - 40 mA Frequency Range - 10 MHz to 600 GHz Geometry - 55 The MA42050 series of NPN silicon planar transistors will give high gain and low noise figure characteristics in VHF

2N6665

Abstract: MA42001-509 2N6665-509 MA42181-510 2n5054 RF NPN POWER TRANSISTOR C 10-50 GHZ 2N2857 Model MA42001 ma42 transistor 2N3953
Contextual Info: an A M P com pany General Purpose Low Noise Bipolar Transistors Features Case Styles • Low Noise Through 1.5 GHz • Hermetic Package • Can Be Screened to JAN, JANTX, JANTXV Levels Description The series of Silicon NPN bipolar transistors are designed

MA42181-510

Abstract: 2N5054 2N6665-509
Contextual Info: M a n A M P icom pany General Purpose Low Noise Bipolar Transistors V3.00 Case Styles Features • Low Noise Through 1.5 GHz • Hermetic Package • Can Be Screened to JAN, JANTX, JANTXV Levels Description The series of Silicon NPN bipolar transistors are designed

oz960

Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Contextual Info: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors

TO92 package

Abstract: ma42217
Contextual Info: Silicon Low Noise Bipolar Transistors MA42217 and MA42218 Series Description Nominal fT = 1.8 GHz Nominal Current Range - 1 to 5 mA Iq Max. = 50 mA Frequency = 10 — 600 MHz Geometry = 55 The MA42217 and MA42218 NPN silicon planar bipolar transistors are designed to provide low noise figure and

W1P 59 transistor

Abstract: W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn
Contextual Info: Philips S em iconductors S urface m oun ted sem ico n d u cto rs C on ten ts PART A page SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors

ZTX3866

Abstract: ZTX325 ZTX327 2N2708 Transistor 2N3866 2N3866 2N4427 2N918 BFS17 BFY90
Contextual Info: R.F. TRANSISTORS AND DIODES TABLE 1 : NPN RF TRANSISTORS TO 1 WATT The transistors shown in this table are suitable for use in a wide range of high frequency applications where high fT, low noise and low intermodulation distortion features are required. Typical applications include UHF/VHF amplifiers, communications equipments, domestic and automotive

transistor K 2056

Abstract: MA42120 K 2056 transistor 2N6665 MA42001-509 2N5054 2n5651 MA42005 MA-42120 2N2857 Model
Contextual Info: /yfaom Silicon Low Noise Bipolar T ransistors Features • LOW NOISE THROUGH 2.5 GHz ■ HERMETIC PACKAGE ■ CAN BE SCREENED TO JAN, JANTX, JANTXV LEVELS Description The series of Silicon NPN bipolar transistors are designed for low noise amplifiers in the frequency range of 60 MHz

SOT R23

Abstract: 2SC3356 marking R24 r25 q
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors SOT-323 2SC3356 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES z Low noise amplifier at VHF, z Low Noise and High Gain z High Power Gain 3. COLLECTOR UHF and CATV band.

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors SOT-323 2SC3356 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES z Low noise amplifier at VHF, UHF and CATV band. z Low Noise and High Gain z High Power Gain 3. COLLECTOR

Contextual Info: DATA SHEET SILICON TRANSISTOR µPA811T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4228 SMALL MINI MOLD The µPA811T has built-in 2 low-voltage transistors which are designed to PACKAGE DRAWINGS amplify low noise in the VHF band to the UHF band.

lem 812

Abstract: NF 936 2SC4228 KB MARKING
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA800T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD The µPA800T has built-in 2 low-voltage transistors which are designed PACKAGE DRAWINGS to amplify low noise in the VHF band to the UHF band.

L-07C1N8ST

Abstract: atf55143 fet curtice nonlinear model ATF-55143 sdars AN-1222 ATF-551M4 ATF pHEMT 250R07C8R2FV4T
Contextual Info: ATF-55143 Low Noise 2300 MHz Amplifier Application Note 5294 Introduction Description A critical first step in any LNA design is the selection of the active device. Low cost field effect transistors are often used due to their low noise figures and high linearity. Besides having a very low typical noise figure

PT 8519

Abstract: PT 4207 2SC4227 marking R34
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA802T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD The µPA802T has built-in 2 low-voltage transistors which are designed PACKAGE DRAWINGS to amplify low noise in the VHF band to the UHF band.

Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA802T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD The µPA802T has built-in 2 low-voltage transistors which are designed PACKAGE DRAWINGS to amplify low noise in the VHF band to the UHF band.

nec 2532

Abstract: lem 4202 NEC 2504 free ic 2034 2SC4228 ic 4521 NEC JAPAN 282 110 01 NEC+2532
Contextual Info: DATA SHEET SILICON TRANSISTOR µPA811T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4228 SMALL MINI MOLD The µPA811T has built-in 2 low-voltage transistors which are designed to PACKAGE DRAWINGS amplify low noise in the VHF band to the UHF band.

SOT R23

Abstract: marking R24 2SC3356 SOT R25 r25 q
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SC3356 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES z Low noise amplifier at VHF, UHF and CATV band. z Low Noise and High Gain z High Power Gain 3. COLLECTOR

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SC3356 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES z Low noise amplifier at VHF, UHF and CATV band. z Low Noise and High Gain z High Power Gain 3. COLLECTOR

Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA812T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4227 SMALL MINI MOLD The µPA812T has built-in 2 low-voltage transistors which are designed to PACKAGE DRAWINGS amplify low noise in the VHF band to the UHF band.

nec d 588

Abstract: NEC 2532 NEC 2504
Contextual Info: DATA SHEET SILICON TRANSISTOR uPA811T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4228 SMALL MINI MOLD The /xPA811T has built-in 2 low-voltage transistors which are designed to PACKAGE DRAWINGS am plify low noise in the VHF band to the UHF band.