LOW NOISE TRANSISTORS MICROWAVE Search Results

MA4T64500

Abstract: 4558 MA4T64535 557 sot143 micro X
Contextual Info: Silicon Low Noise Transistors Silicon Bipolar High fT Low Noise Microwave Transistors M A 4T64500 Series Features • fT to 9 GHz MA4T64535 Micro-X Low Noise Figure I •High Associated Gain ■Hermetic and Surface Mount Packages Available + ■Can be Screened to JANTX, JANTXV

Contextual Info: MMBR911MLT1 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES EL PR The MMBR911MLT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. ! Low noise-2.9dB@1GHz ! Low cost SOT23 package

Contextual Info: MMBR5179LT1 RF & MICROWAVE TRANSISTORS DESCRIPTION KEY FEATURES ! High FTau-1.4GHz EL PR The MMBR5179LT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. ! Low noise-4.5dB@200MHz ! Low cost SOT23 package

MMBR911LT1

Abstract: MMBR911MLT1
Contextual Info: MMBR911MLT1 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES EL PR The MMBR911MLT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. ! Low noise-2.9dB@1GHz ! Low cost SOT23 package

MMBR5179LT1

Contextual Info: MMBR5179LT1 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES EL PR The MMBR5179LT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. ! Low noise-4.5dB@200MHz ! Low cost SOT23 package

MMBR901

Abstract: MRF9011LT1 MRF9011MLT1 MMBR901MLT1
Contextual Info: MMBR901MLT1/MRF9011MLT1 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES EL PR The MMBR901LT1/MRF9011LT1 are low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. ! Low noise-1.8dB@1GHz ! Low cost SOT23/SOT143

MRF9411MLT1

Contextual Info: MMBR941MLT1/MRF9411MLT1 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES EL PR The MMBR941MLT1/MRF9411MLT1 are low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. ! Low noise-1.3dB@1GHz ! Low cost SOT23/SOT143

Contextual Info: MMBR5179LT1 RF & MICROWAVE TRANSISTORS RF PRODUCTS DIVISION DESCRIPTION KEY FEATURES E PR The MMBR5179LT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages.  Low noise-4.5dB@200MHz  Low cost SOT23 package

SOT143 L03

Abstract: L0523 D2030 L03 sot143 yg 2025 microstripline FR4 AT-30511 AT-31011 W02 SOT23 ATF-10236
Contextual Info: 900 and 2400 MHz Amplifiers Using the AT-3 Series Low Noise Silicon Bipolar Transistors Application Note AN 1085 1. Introduction Discrete transistors offer low cost solutions for commercial applications in the VHF through microwave frequency range. Today’s silicon bipolar transistors offer state-ofthe-art noise figure and gain performance with low power

Contextual Info: MMBR911LT1 RF & MICROWAVE TRANSISTORS DESCRIPTION KEY FEATURES ! High FTau-6.0 GHz EL PR The MMBR911LT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. ! Low noise-2.9dB@1GHz ! Low cost SOT23 package IMPORTANT: For the most current data, visit: http://www.advancedpower.com

Contextual Info: BFR92ALT1 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES EL PR The BFR92ALT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. ! Low noise-3.0dB@500MHz ! Low cost SOT23 package IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

Contextual Info: MMBR911LT1 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES EL PR The MMBR911LT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. ! Low noise-2.9dB@1GHz ! Low cost SOT23 package IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

Contextual Info: BFR92ALT1 RF & MICROWAVE TRANSISTORS RF PRODUCTS DIVISION DESCRIPTION KEY FEATURES E PR The BFR92ALT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages.  Low noise-3.0dB@500MHz  Low cost SOT23 package IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

MRFC572

Abstract: MRF572 MRF671 vk200* FERROXCUBE MRF571
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF571 MRF572 MRFC572 The RF Line NPN SILICON HIGH FREQUENCY TRANSISTORS . . . designed for low-noise, w ide dynamic range front end am­ plifiers, low noise VCO's, and microwave power multipliers. • Low Noise • High Gain

HP346A

Abstract: D2030 5091-9311E 47433 W02 SOT23 AT-30511 AT-31011 AT-32033 ATF-10236 Hewlett-Packard transistor microwave
Contextual Info: 900 and 2400 MHz Amplifiers Using the AT-3 Series Low Noise Silicon Bipolar Transistors Application Note 1085 1. Introduction Discrete transistors offer low cost solutions for commercial applications in the VHF through microwave frequency range. Today’s silicon bipolar transistors

yg 2025

Abstract: HP346A 2305 isolator AT-30511 AT-31011 AT-32033 ATF-10236 AN-G004 equivalent transistor K 3532
Contextual Info: 900 and 2400 MHz Amplifiers Using the AT-3 Series Low Noise Silicon Bipolar Transistors Application Note 1085 1. Introduction Discrete transistors offer low cost solutions for commercial applications in the VHF through microwave frequency range. Today’s silicon bipolar transistors

vk200* FERROXCUBE

Abstract: MRF571
Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistors . designed for low-noise, wide dynamic range front end amplifiers, low-noise V C O ’s, and microwave power multipliers. • Low Noise • High Gain fT = 8.0 GHZ @ 50 mA

CFH703A

Abstract: LNA Ku band CFH705 cfh703 ku LNA LNB ku band lnb ku ku band lna LNA ku-band SOT343F
Contextual Info: CFH70x Low-noise, high gain pHEMT transistors in small & easy to use SOT343FP package Fabricated using GaAs process technology, the CFH70x family pHEMT transistors delivers extremely low noise and very high gain in the easy to use SOT343FP package making it the ideal

mount chip transistor 332

Abstract: SOT-23 TRANSISTOR 548 MA4T64500
Contextual Info: Silicon Bipolar High fT Low Noise Microwave Transistor MA4T645 Series MA4T645 Series Silicon Bipolar High fT Low Noise Microwave Transistors Features • • • • • • • Case Style fT to 9 GHz Low Noise Figure High Associated Gain Hermetic and Surface Mount Packages Available

Contextual Info: Low OperatingVoltage, High fT Bipolar Microwave Transistors MP4T6365 V2.00 Features • Designed for Battery Operation • f T to 10 GHz • Low Voltage Oscillator and Amplifier • Low Phase Noise and Noise Figure • Hermetic and Surface Mount Packages and

26-13 transistor sot-23

Abstract: micro X Silicon Bipolar Transistor Micro-X Ceramic
Contextual Info: Low Operating Voltage, High fT Bipolar Microwave Transistors MA4T6365XX Series Features MA4T636535 • Designed for Battery Operation Micro -X • fT to 10 GHz • Low Voltage Oscillator and Amplifier • Low Phase Noise and Noise Figure • Hermetic and Surface Mount Packages

2SC2149

Abstract: 2SC2148 micro X
Contextual Info: DATA SHEET SILICON TRANSISTORS 2SC2148, 2SC2149 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC2148, 2SC2149 are economical microwave transistors PACKAGE DIMENSIONS encapsulated into new hermetic stripline packages, "micro X".

2N2857

Abstract: 2N2857 JANTXV MRF 110 2N2857 JANTX 2N2857 JAN low noise transistors microwave
Contextual Info: Silicon Bipolar Low Noise Microwave Transistors 2N2857 Case Style TO-72 CAN 509 Features • High Gain (19dB Typical @ 450 MHz) • Low Noise Figure At Low Ic • Gold Metalization • Useful To 700 MHz • Can be Screened to JANTX, JANTXV Equivalent Levels

ATF10236

Abstract: FET K 2611 TRANSISTOR BD 137-10 AGILENT 9988 microstripline ATF-10136 transistor equivalent 2274 table chart ATF-10736 HP346A MSA-0686
Contextual Info: Using the ATF-10236 in Low Noise Amplifier Applications in the UHF Through 1.7 GHz Frequency Range Application Note 1076 Introduction GaAs FET devices are typically used in low-noise amplifiers in the microwave frequency region where silicon transistors can’t