LOW NOISE TRANSISTOR BC Search Results

LOW NOISE TRANSISTOR BC Result Highlights (5)

Part	Manufacturer	Description
NFMJMPC156R0G3D	Murata Manufacturing Co Ltd	Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose
NFM31PC276D0E3L	Murata Manufacturing Co Ltd	Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose
NFMJMPL226R0G5D	Murata Manufacturing Co Ltd	Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold

LOW NOISE TRANSISTOR BC Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
BCS49 Abstract: No abstract text available Text: Philips Semiconductors Product specification NPN general purpose transistor FEATURES BC849W; BC850W PIN CONFIGURATION • S- mini package. • Low noise DESCRIPTION NPN transistor in a plastic SOT323 package, primarily intended for low noise stages in tape recorders, hi-fi	OCR Scan	BC849W; BC850W OT323 BC849W BC850W BCS49	PDF
transistor tic 106 Abstract: BCY66 AF200 transistor tic 106 N tic 105 Q60203-Y66 tic 246 h tic 246 tic 245 Text: BCY66 NPN Transistor for low-noise AF pre-stages BCY 66 is an epitaxial NPN silicon planar transistor in a case 18 A 3 DIN 41 876 TO-18 . The collector is electrically connected to the case. The transistor has been designed for especially low-noise AF pre-stages.	OCR Scan	BCY66 BCY66 60203-Y transistor tic 106 AF200 transistor tic 106 N tic 105 Q60203-Y66 tic 246 h tic 246 tic 245	PDF
transistor marking 4c Abstract: No abstract text available Text: Philips Sem iconductors Product specification PNP general purpose transistor BC859W; BC860W PIN CONFIGURATION FEATURES • S -m in i package. • Low noise DESCRIPTION PNP transistor in a plastic SOT323 package, prim arily intended for low noise stages in tape recorders, hi-fi	OCR Scan	BC859W; BC860W OT323 BC859W: BC859AW BC859BW BC859CW BC860W: BC860AW transistor marking 4c	PDF
BCY67 Abstract: HTI 2E 101S Q62702-C254 Text: BCY67 PNP Transistor for low-noise AF pre-stages BCY 67 is an epitaxial PNP silicon planar transistor in a case 18 A 3 DIN 41 876 T O -18 . The collector is electrically connected to the case. The transistor has been designed for especially low-noise pre-stages as well as in	OCR Scan	BCY67 BCY67 10ZkHz HTI 2E 101S Q62702-C254	PDF
Untitled Abstract: No abstract text available Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 3 -FEBRUARY 95_ ZTX1051A _ _ _ FEATURES * Bcev=150V * Very Low Saturation Voltage * High Gain * Inherently Low Noise APPLICATIONS * Em ergency Lighting * Low Noise Audio	OCR Scan	ZTX1051A R100MHz lB-40mA, 100mA 0D11D3D	PDF
Untitled Abstract: No abstract text available Text: FPD7612P70 FPD7612P70 Low Noise High Frequency Packaged pHEMT LOW NOISE HIGH FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD7612P70 is a low parasitic, surface mountable packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT optimized for low noise, high frequency applications.	Original	FPD7612P70 FPD7612P70 22dBm 85GHz 24GHz	PDF
FPD7612P70 Abstract: 0805-X7R HEMT marking P 1005FHL InP HBT transistor low noise pseudomorphic HEMT rogers 4003 InP transistor HEMT DS090629 ATC0805X7R Text: FPD7612P70 FPD7612P70 Low Noise High Frequency Packaged pHEMT LOW NOISE HIGH FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD7612P70 is a low parasitic, surface mountable packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT optimized for low noise, high frequency applications.	Original	FPD7612P70 FPD7612P70 22dBm 85GHz 24GHz 11GHz) 0805-X7R HEMT marking P 1005FHL InP HBT transistor low noise pseudomorphic HEMT rogers 4003 InP transistor HEMT DS090629 ATC0805X7R	PDF
FPD6836P70 Abstract: FPD6836P70SQ FPD6836P70SR mrs 317 36P7 LL1005FHL 0805X7R BC 945 transistor PHEMT marking code B fpd6836p Text: FPD6836P70 FPD6836P70 Low-Noise High-Frequency Packaged pHEMT LOW-NOISE HIGH-FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD6836P70 is a low parasitic, surface mountable packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT optimised for low-noise, high-frequency applications.	Original	FPD6836P70 FPD6836P70 22dBm 18GHz 11GHz) 18GHz) FPD6836P70-AG FPD6836P70-AJ FPD6836P70SQ FPD6836P70SR mrs 317 36P7 LL1005FHL 0805X7R BC 945 transistor PHEMT marking code B fpd6836p	PDF
FPD6836P70 Abstract: No abstract text available Text: FPD6836P70 FPD6836P70 Low-Noise High-Frequency Packaged pHEMT LOW-NOISE HIGH-FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD6836P70 is a low parasitic, surface mountable packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT optimised for low-noise, high-frequency applications.	Original	FPD6836P70 FPD6836P70 22dBm 18GHz FPD6836P70-AG FPD6836P70-AJ FPD6836P70SQ	PDF
MN1280 Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor	Original		PDF
Untitled Abstract: No abstract text available Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 3 FEBRUARY 95 FEATURES * BCEV=150V * Very Low Saturation Voltage * High Gain * Inherently Low Noise APPLICATIONS * Emergency Lighting * Low Noise Audio 1.0 180 D=1 D.C 160 t1 140 tp 120 100 0.75	Original	ZTX1051A 100ms NY11725	PDF
transistor BC 245 Abstract: 420 transistor Infineon Technologies transistor 4 ghz infineon rf smd package amplifier TRANSISTOR 14 GHZ RF TRANSISTOR SOT23 5 BFP420 smd transistor infineon RF Semiconductors TRANSISTOR BC 136 Text: Application Note No. 001 Discrete & RF Semiconductors SIEGET 25 Low Noise Amplifier with BFP 420 Transistor at 2.4 GHz The SIEMENS Grounded Emitter Transistor Line is a completely new generation of silicon bipolar junction RF-transistors. This application note describes a low-noise amplifier with the	Original		PDF
BC307 Abstract: BC308 BC309 bc3078 bc307 pnp BC308 PNP transistor BC307 complementary Text: SEMICONDUCTOR TECHNICAL DATA BC307/8/9 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. FEATURES • High Voltage : BC307 V Ceo= -45V . • Low Noise : BC309 NF=0.2dB Typ. , 3dB(Max.) (Vce=-6V, Ic=-0.1mA, f=lkHz).	OCR Scan	BC307/8/9 BC307 BC309 BC237/238/239. BC308 BC309 BC308 bc3078 bc307 pnp BC308 PNP transistor BC307 complementary	PDF
bc307 Abstract: bc308 BC309 BC308 PNP transistor transistor BC309 BC237 BC307 complementary Text: SEMICONDUCTOR BC307/8/9 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. B C FEATURES A High Voltage : BC307 VCEO=-45V. Low Noise : BC309 NF=0.2dB Typ. , 3dB(Max.) (VCE=-6V, IC=-0.1mA, f=1kHz). N	Original	BC307/8/9 BC309 BC237/238/239. BC307 BC308 BC307 BC308 PNP transistor transistor BC309 BC237 BC307 complementary	PDF

72w transistor sot 23 Abstract: 72W SOT23 BC817 rohm Text: ROHM CO L T » Tr ' 4QE D B 7&2W Ï 00032=11 b HRHM S S T Super Slim Transistor Types (S O T-23) Function Low Noise Amp Driver Low noise Amp Driver Low Noise Amp Mix Ose. TVTuner Type BC817-16 BC817-2S BC817-40 BC847A BC847B BC847C BC848A BC848B BC848C BC857A	OCR Scan	BC817-16 BC817-2S BC817-40 BC847A BC847B BC847C BC848A BC848B BC848C BC857A 72w transistor sot 23 72W SOT23 BC817 rohm	PDF
Untitled Abstract: No abstract text available Text: SEMICONDUCTOR BC559/560 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE APPLICATION. FEATURE 1999. 11. 30 Revision No : 2 1/1	Original	BC559/560	PDF
bc237 Abstract: bc238 bc239 BC237 complementary TRANSISTOR bc238 BC307 transistor bc239 120120A Text: SEMICONDUCTOR BC237/8/9 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. B C FEATURES A High Voltage : BC237 VCEO=45V. Low Noise : BC239 NF=0.2dB Typ. , 3dB(Max.) (VCE=6V, IC=0.1mA, f=1kHz). N E K	Original	BC237/8/9 BC239 BC307/308/309. BC237 BC238 BC237 BC23age BC237 complementary TRANSISTOR bc238 BC307 transistor bc239 120120A	PDF
Untitled Abstract: No abstract text available Text: SEMICONDUCTOR BC549/550 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURE 1999. 11. 30 Revision No : 2 1/1	Original	BC549/550	PDF
Transistor BC 1078 Abstract: Transistor BC 1078 transistor transistor marking R2s TRANSISTOR MARKING YB BC 1078 transistor BF 245 C equivalent BI 425 Text: BFP620F E7764 XYs NPN Silicon Germanium RF Transistor Preliminary data High gain low noise RF transistor 3 Small package 1.4 x 0.8 x 0.59 mm 2 4 Outstanding noise figure F = 0.7 dB at 1.8 GHz 1 Outstanding noise figure F = 1.3 dB at 6 GHz Maximum stable gain	Original	BFP620F E7764 Jul-03-2003 Transistor BC 1078 Transistor BC 1078 transistor transistor marking R2s TRANSISTOR MARKING YB BC 1078 transistor BF 245 C equivalent BI 425	PDF
Untitled Abstract: No abstract text available Text: BFP620F XYs NPN Silicon Germanium RF Transistor Preliminary data High gain low noise RF transistor 3 Small package 1.4 x 0.8 x 0.59 mm 2 4 Outstanding noise figure F = 0.7 dB at 1.8 GHz 1 Outstanding noise figure F = 1.3 dB at 6 GHz Maximum stable gain	Original	BFP620F Feb-20-2003	PDF
BC237 Abstract: BC238 bc2378 transistor bc237 bc337 BC239 transistor bc238 bc237 transistor Text: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA BC237/8/9 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. FEATURES • High Voltage : BC237 V ceo=45V. • Low Noise : BC239 NF=0.2dB Typ. , 3dB(Max.) (V Ce =6V, Ic=0.1mA, f=lkHz).	OCR Scan	BC237/8/9 BC237 BC239 BC307/308/309. BC238 BC239 BC238 bc2378 transistor bc237 bc337 transistor bc238 bc237 transistor	PDF
BCY79 Abstract: BCY59 Text: BCY79 LOW NOISE AUDIO AMPLIFIER DESCRIPTION The BCY79 is a silicon Planar Epitaxial PNP transistor in Jedec TO-18 metal case. It is intented for use in audio input stages, driver stages and low-noise input stages. The NPN complementary type is BCY59. c	Original	BCY79 BCY79 BCY59. BCY59	PDF
oz960 Abstract: khb9D5N20P MB4213 KIA78pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors	Original	KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb9D5N20P MB4213 KIA78pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j	PDF
BCY79 Abstract: BCY59 Text: BCY79 LOW NOISE AUDIO AMPLIFIER DESCRIPTION The BCY79 is a silicon Planar Epitaxial PNP transistor in Jedec TO-18 metal case. It is intented for use in audio input stages, driver stages and low-noise input stages. The NPN complementary type is BCY59. TO-18	Original	BCY79 BCY79 BCY59. BCY59	PDF

LOW NOISE TRANSISTOR BC Search Results

LOW NOISE TRANSISTOR BC Result Highlights (5)

LOW NOISE TRANSISTOR BC Datasheets Context Search

BCS49

transistor tic 106

transistor marking 4c

BCY67

Untitled

Untitled

FPD7612P70

FPD6836P70

FPD6836P70

MN1280

Untitled

transistor BC 245

BC307

bc307

72w transistor sot 23

Untitled

bc237

Untitled

Transistor BC 1078

Untitled

BC237

BCY79

oz960

BCY79