B3RX1618
Abstract: radar front end X-band marine radar
Text: B3RX1618 X-Band Low Noise Receiver Front End DESCRIPTION The B3RX1618 is a protected low noise front end for Xband marine radar receivers. It comprises an internal microstrip limiter, a low noise amplifier, an image rejection mixer and an electronically tuned local oscillator.
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B3RX1618
M209914A
radar front end
X-band marine radar
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k2800
Abstract: No abstract text available
Text: Our Performance Your Reputation 100MHz Low Noise/Low G-Sensitivity OCXO NA-100MK2800 series K2800 Series in 25.4x25.4mm DIP package NA-100MK2800 series is a 100.000 MHz high performance VC OCXO offering low phase noise(LPN), low G sensitivity(LGS) and tight frequency stability down to
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100MHz
NA-100MK2800
K2800
50ppb
Measurem100
-40oC~
NA-100MK2800
NA-100MK2801
NA-100MK2802
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B3RX1620
Abstract: X-band amplifier WR90 waveguide switch X-band marine radar
Text: B3RX1620 X-Band Low Noise Front End TYPICAL OPERATION Operating Conditions DESCRIPTION Operating voltage . . . . Signal frequency . . . . Local Oscillator frequency tuning voltage 4V . . . . tuning voltage 24V . . . The B3RX1620 is a low noise front end for X-band
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B3RX1620
M209915A
X-band amplifier
WR90 waveguide switch
X-band marine radar
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Untitled
Abstract: No abstract text available
Text: 100MHz Very Low Noise VCXO VL-Type series VL-Type Series in 9 x 14mm SMD package VL-100MHz series is a 100.000 MHz high performance VCXO offering high frequency and very low phase noise. The part comes in a small SMD package which makes it suitable for reflow soldering during pick and place
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100MHz
VL-100MHz
-40oC
JESD22-B103
MIL-STD-883
JESD22-A104
1500G,
JESD22-B104
T0057-O-044-3
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Untitled
Abstract: No abstract text available
Text: 100MHz Very Low Noise VCXO VL-Type series VL-Type Series in 9 x 14mm SMD package VL-100MHz series is a 100.000 MHz high performance VCXO offering high frequency and very low phase noise. The part comes in a small SMD package which makes it suitable for reflow soldering during pick and place
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100MHz
VL-100MHz
-40oC
VLCUVLWAFF-100M
VLCUVLWAGF-100M
VLCUVLWAJF-100M
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low noise transistors rf
Abstract: No abstract text available
Text: Silicon Low Noise Bipolar Transistors Features • LOW NOISE THROUGH 2.5 GHz ■ HERMETIC PACKAGE ■ CAN BE SCREENED TO JAN, JANTX, JANTXV LEVELS Description The series of Silicon NPN bipolar transistors are designed for low noise amplifiers in the frequency range of 60 MHz
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transistor K 2056
Abstract: MA42120 K 2056 transistor 2N6665 MA42001-509 2N5054 2n5651 MA42005 MA-42120 2N2857 Model
Text: /yfaom Silicon Low Noise Bipolar T ransistors Features • LOW NOISE THROUGH 2.5 GHz ■ HERMETIC PACKAGE ■ CAN BE SCREENED TO JAN, JANTX, JANTXV LEVELS Description The series of Silicon NPN bipolar transistors are designed for low noise amplifiers in the frequency range of 60 MHz
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GaAs Low Noise Amplifier
Abstract: No abstract text available
Text: MONOLITHIC GaAs LOW NOISE AMPLIFIER TACHCNICS ï TCWL-01 CORPORATION ADVANCE INFORMATION DATA SHEET Septem ber, 1987 Features: • • • • • Broad Band .05-4 GHz Low Noise Figure Low Gain Ripple ± .75 dB Gold Metalization Nitride Passivation Description:
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TCWL-01(
TCWL-0102
TC-02
GaAs Low Noise Amplifier
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Untitled
Abstract: No abstract text available
Text: RF FRONT END ASSEMBLY ML RX-1000 LOW NOISE RF FRONT END 8 TO 12 GHz FEATURES ♦ Compact/Low Weight ♦ Low Cost ♦ Tunable Local Oscillator ♦ Low Noise Figure ♦ High Image Rejection DESCRIPTION ML RX-1000 Series general purpose front ends feature waveguide RF input, varactor tunable L.O., BITE monitor and
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RX-1000
RX-1000
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Untitled
Abstract: No abstract text available
Text: INTEGRATED TX/RX FRONT END MLTR-1400 LOW NOISE RADAR R.F. HEAD ASSEMBLY 4 T O 8 GHz FEATURES ♦ ♦ ♦ ♦ ♦ Low Size/Weight Hybrid Technology Frequency Agile Low Noise Figure Wide Dynamic Range DESCRIPTION M L T R -1400 fro n t ends, designed and m an u fa ctu re d in the U .K . are com pact, pulsed, freq u en cy
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MLTR-1400
1500g
-810C
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Vo 80500 TRANSISTOR
Abstract: ST 80500 ap 4606 ST 80500 transistor q 1257 transistor IR 9342 2110 transistor NE68819 SOT143 L03 0828 30400
Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE688 SERIES FEATURES_ • LOW PHASE NOISE DISTORTIO N • LOW NOISE: 1 .5 dB at 2 .0 G H z • LOW VO LTAG E OPERATION • LARGE ABSOLUTE M AXIM UM CO LLEC TO R CU RREN T: Ic M A X = 1 0 0 m A
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NE688
OT-143)
PACKAGEOUTUNE39R
NE68818-T1
NE68819-T1
NE68830-T1
NE68833-T1
NE68839-T1
NE68839R-T1
Vo 80500 TRANSISTOR
ST 80500
ap 4606
ST 80500 transistor
q 1257
transistor IR 9342
2110 transistor
NE68819
SOT143 L03
0828 30400
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Untitled
Abstract: No abstract text available
Text: AfaCOM RADAR SYNTHESISER MLS-1400 FAST SWITCHING LOW NOISE SYNTHESISER FEATURES ♦ Fast Switching ♦ Low Phase Noise and Spurious ♦ Small Size ♦ Fixed LO Outputs ♦ Full Military Specification DESCRIPTION Designed for lightweight frequency agile radars MLS-1400 uses phase locked direct synthesis techniques to achieve
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MLS-1400
MLS-1400
18GHz
MIL-S-810D,
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE ObE D • 1 bbS3T31 0014^13 5 ■ LAE6000Q 7 V r-3 |-l5 T LOW-NOISE MICROWAVE TRANSISTOR N-P-N transistor for common-emitter class-A low-noise amplifiers up to 4 GHz. Self-aligned process entirely ion implanted and gold sandwich metallization ensure an optimum temperature profile,
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bbS3T31
LAE6000Q
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ZC830
Abstract: ZC2800 ZC2811 ZC5800 ZC820 ZC821 ZC822 ZC823 ZC824 ZC825
Text: E-LINE DIODE SPECIFICATIONS SCHOTTKY BARRIER DIODES These devices have a high breakdown voltage and ultra fast sw itching capabilities. R.F. applications include low noise mixers, large and small signal detectors, limiters and discriminators. Applications
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10/iA
ZC2800
ZC2811
ZC5800
infi832A
ZC833A
ZC834A
ZC835A
ZC836A
ZC830)
ZC830
ZC820
ZC821
ZC822
ZC823
ZC824
ZC825
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Untitled
Abstract: No abstract text available
Text: MULTI CHANNEL SOURCES MLO-16000 PHASE LOCKED MULTI CHANNEL SOURCES 1-18 GHz FEATURES ♦ Low Phase Noise ♦ Low Phase Hits ♦ Low Spurious ♦ Low Microphony ♦ Slimline Package DESCRIPTION MLO-I6OOO series sources provide up to 10 customer selectable frequencies over a 4% bandwidth. A
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MLO-16000
MIL-STD-810D
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Untitled
Abstract: No abstract text available
Text: INTEGRATED TX/RX RF FRONT END MLTR-1200 F.M. C.W. RADAR R.F. HEAD ASSEMBLY 4 TO 8 GHz FEATURES ♦ Compact/Low Weight ♦ Low Cost ♦ Variable Output Power ♦ AM/FM Modulation ♦ Low Noise Figure DESCRIPTION MLTR-1200 front ends are designed for F.M. C.W. radars where size and weight are at a premium and where a very
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MLTR-1200
MLTR-1200
26dBm
-30dBm
-810C
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FMMV105G
Abstract: fmmv2109 ZC2800 ZC2811 ZC5800 ZC820 ZC821 ZC822 ZC823 ZC824
Text: E-LINE DIODE SPECIFICATIONS SCH O TTK Y BARRIER DIO DES These devices have a high breakdown voltage and ultra fast switching capabilities. R.F. applications include low noise mixers, large and small signal detectors, limiters and discriminators. Applications
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10/iA
ZC2800
ZC2811
ZC5800
ZC2800-ZC5800
ZC2811
OT-23
ZC2800E
rZC2810E
ZC2811E
FMMV105G
fmmv2109
ZC820
ZC821
ZC822
ZC823
ZC824
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ZBF579
Abstract: No abstract text available
Text: ZBF569 ZBF579 SOT23 PNP SILICON PLANAR R.F. TRANSISTORS FEATURES. * HIGH fr UP TO 2.4GHz. * LOW NOISE <3.3dB AT 500MHz PARTMARKING DETAILS ZBF569 - F69 ZBF579 - F79 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL ZBF569 ZBF579 UNIT Collector-Base Voltage VcBO 35
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ZBF569
ZBF579
500MHz
ZBF579
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SPSD
Abstract: No abstract text available
Text: PHASE LOCKED OSCILLATOR MODULES MLO-27700 & MLO-27800 Series MINIATURE PHASE LOCKED OSCILLATOR MODULES PLVCO MLO-27800 PLVCXO MLO-27700 FEATURES ♦ Miniaturised ♦ Low Phase Noise ♦ Low Power Consumption ♦ Proven Synthesiser Building Blocks Full Size
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MLO-27700
MLO-27800
MLO-27700
MLO-27800
LO-27700
LO-27800
-120dBc
-160dBc/Hz
SPSD
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ZTX3866
Abstract: ZTX325 ZTX327 2N2708 Transistor 2N3866 2N3866 2N4427 2N918 BFS17 BFY90
Text: R.F. TRANSISTORS AND DIODES TABLE 1 : NPN RF TRANSISTORS TO 1 WATT The transistors shown in this table are suitable for use in a wide range of high frequency applications where high fT, low noise and low intermodulation distortion features are required. Typical applications include UHF/VHF amplifiers, communications equipments, domestic and automotive
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2N3866
ZTX327
ZTX3866
MPSH10
OT-23
2N4427
2N2708
BFY90
ZTX325
BFS17
Transistor 2N3866
2N918
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ztx323
Abstract: HF transistors table ZTX327 ZTX325
Text: R.F. TR A N S IS T O R S A N O DIODES TABLE 1: NPN RF TRANSISTORS TO 1 WATT The transistors shown in this table are suitable for use in a wide range o f high frequency applications where high f T, low noise and low intermodulation distortion features are required.
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2N3866
ZTX327
ZTX3866
MPSH10
FMMTH10
2N4427
2N2708
BFY90
ZTX325
BFS17
ztx323
HF transistors table
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radar block diagram
Abstract: No abstract text available
Text: INTEGRATED TX/R X FRONT END MLTR-1300 PULSED RADAR R.F. HEAD ASSEMBLY 4 TO 8 GHz FEATURES ♦ High Stability ♦ Low Power Consumption ♦ High Gain ♦ Low Noise Figure ♦ High Output Power DESCRIPTION M LTR-1300 Series Pulsed T ransm itter/R eceivers interface at antenna and baseband in radar systems
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MLTR-1300
LTR-1300
100MHz
30dBm
-88dB
X35mm
MIL-STD-810C
radar block diagram
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E288CC
Abstract: No abstract text available
Text: PHILIPS SQ |Ë288CC| SPECIAL QUALITY. LONG LIFE DOUBLE TRIODE with high mutual conductance and low noise for use in cascode circuits, in R.F. or X.F. amplifiers HEATIKQ Indirect by A.C. or D.C.; parallel supply Heater voltage Vf = 6.3 V Heater current If • 475 mA
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E288CC
E288CC
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CP640
Abstract: TELEDYNE CRYSTALONICS TMF18 2SC140
Text: POW RFET CP640 SILICON EPITAXIAL JUNCTION N-CHANNEL FIELD EFFECT TRANSISTOR GEOMETRY 424, PG. 58 • FOR HIGH DYNAMIC RANGE R.F. AMPLIFIERS • SPECIFIED FOR H.F. BAND - USEABLE THRU 400 MHz • LOW NOISE FIGURE DIRECT FROM 50 Ohm LINE ELECTRICAL D ATA
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CP640
TMF18
CP640
TELEDYNE CRYSTALONICS
2SC140
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