LOW NOISE R.F Search Results

B3RX1618

Abstract: radar front end X-band marine radar
Contextual Info: B3RX1618 X-Band Low Noise Receiver Front End DESCRIPTION The B3RX1618 is a protected low noise front end for Xband marine radar receivers. It comprises an internal microstrip limiter, a low noise amplifier, an image rejection mixer and an electronically tuned local oscillator.

low noise transistors rf

Contextual Info: Silicon Low Noise Bipolar Transistors Features • LOW NOISE THROUGH 2.5 GHz ■ HERMETIC PACKAGE ■ CAN BE SCREENED TO JAN, JANTX, JANTXV LEVELS Description The series of Silicon NPN bipolar transistors are designed for low noise amplifiers in the frequency range of 60 MHz

transistor K 2056

Abstract: MA42120 K 2056 transistor 2N6665 MA42001-509 2N5054 2n5651 MA42005 MA-42120 2N2857 Model
Contextual Info: /yfaom Silicon Low Noise Bipolar T ransistors Features • LOW NOISE THROUGH 2.5 GHz ■ HERMETIC PACKAGE ■ CAN BE SCREENED TO JAN, JANTX, JANTXV LEVELS Description The series of Silicon NPN bipolar transistors are designed for low noise amplifiers in the frequency range of 60 MHz

k2800

Contextual Info: Our Performance Your Reputation 100MHz Low Noise/Low G-Sensitivity OCXO NA-100MK2800 series K2800 Series in 25.4x25.4mm DIP package NA-100MK2800 series is a 100.000 MHz high performance VC OCXO offering low phase noise(LPN), low G sensitivity(LGS) and tight frequency stability down to

GaAs Low Noise Amplifier

Contextual Info: MONOLITHIC GaAs LOW NOISE AMPLIFIER TACHCNICS ï TCWL-01 CORPORATION ADVANCE INFORMATION DATA SHEET Septem ber, 1987 Features: • • • • • Broad Band .05-4 GHz Low Noise Figure Low Gain Ripple ± .75 dB Gold Metalization Nitride Passivation Description:

B3RX1620

Abstract: X-band amplifier WR90 waveguide switch X-band marine radar
Contextual Info: B3RX1620 X-Band Low Noise Front End TYPICAL OPERATION Operating Conditions DESCRIPTION Operating voltage . . . . Signal frequency . . . . Local Oscillator frequency tuning voltage 4V . . . . tuning voltage 24V . . . The B3RX1620 is a low noise front end for X-band

Contextual Info: RF FRONT END ASSEMBLY ML RX-1000 LOW NOISE RF FRONT END 8 TO 12 GHz FEATURES ♦ Compact/Low Weight ♦ Low Cost ♦ Tunable Local Oscillator ♦ Low Noise Figure ♦ High Image Rejection DESCRIPTION ML RX-1000 Series general purpose front ends feature waveguide RF input, varactor tunable L.O., BITE monitor and

Contextual Info: INTEGRATED TX/RX FRONT END MLTR-1400 LOW NOISE RADAR R.F. HEAD ASSEMBLY 4 T O 8 GHz FEATURES ♦ ♦ ♦ ♦ ♦ Low Size/Weight Hybrid Technology Frequency Agile Low Noise Figure Wide Dynamic Range DESCRIPTION M L T R -1400 fro n t ends, designed and m an u fa ctu re d in the U .K . are com pact, pulsed, freq u en cy

Vo 80500 TRANSISTOR

Abstract: ST 80500 ap 4606 ST 80500 transistor q 1257 transistor IR 9342 2110 transistor NE68819 SOT143 L03 0828 30400
Contextual Info: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE688 SERIES FEATURES_ • LOW PHASE NOISE DISTORTIO N • LOW NOISE: 1 .5 dB at 2 .0 G H z • LOW VO LTAG E OPERATION • LARGE ABSOLUTE M AXIM UM CO LLEC TO R CU RREN T: Ic M A X = 1 0 0 m A

Contextual Info: AfaCOM RADAR SYNTHESISER MLS-1400 FAST SWITCHING LOW NOISE SYNTHESISER FEATURES ♦ Fast Switching ♦ Low Phase Noise and Spurious ♦ Small Size ♦ Fixed LO Outputs ♦ Full Military Specification DESCRIPTION Designed for lightweight frequency agile radars MLS-1400 uses phase locked direct synthesis techniques to achieve

Contextual Info: N AMER PHILIPS/DISCRETE ObE D • 1 bbS3T31 0014^13 5 ■ LAE6000Q 7 V r-3 |-l5 T LOW-NOISE MICROWAVE TRANSISTOR N-P-N transistor for common-emitter class-A low-noise amplifiers up to 4 GHz. Self-aligned process entirely ion implanted and gold sandwich metallization ensure an optimum temperature profile,

Contextual Info: 100MHz Very Low Noise VCXO VL-Type series VL-Type Series in 9 x 14mm SMD package VL-100MHz series is a 100.000 MHz high performance VCXO offering high frequency and very low phase noise. The part comes in a small SMD package which makes it suitable for reflow soldering during pick and place

Contextual Info: 100MHz Very Low Noise VCXO VL-Type series VL-Type Series in 9 x 14mm SMD package VL-100MHz series is a 100.000 MHz high performance VCXO offering high frequency and very low phase noise. The part comes in a small SMD package which makes it suitable for reflow soldering during pick and place

ZC830

Abstract: ZC2800 ZC2811 ZC5800 ZC820 ZC821 ZC822 ZC823 ZC824 ZC825
Contextual Info: E-LINE DIODE SPECIFICATIONS SCHOTTKY BARRIER DIODES These devices have a high breakdown voltage and ultra fast sw itching capabilities. R.F. applications include low noise mixers, large and small signal detectors, limiters and discriminators. Applications

Contextual Info: MULTI CHANNEL SOURCES MLO-16000 PHASE LOCKED MULTI CHANNEL SOURCES 1-18 GHz FEATURES ♦ Low Phase Noise ♦ Low Phase Hits ♦ Low Spurious ♦ Low Microphony ♦ Slimline Package DESCRIPTION MLO-I6OOO series sources provide up to 10 customer selectable frequencies over a 4% bandwidth. A

Contextual Info: INTEGRATED TX/RX RF FRONT END MLTR-1200 F.M. C.W. RADAR R.F. HEAD ASSEMBLY 4 TO 8 GHz FEATURES ♦ Compact/Low Weight ♦ Low Cost ♦ Variable Output Power ♦ AM/FM Modulation ♦ Low Noise Figure DESCRIPTION MLTR-1200 front ends are designed for F.M. C.W. radars where size and weight are at a premium and where a very

FMMV105G

Abstract: fmmv2109 ZC2800 ZC2811 ZC5800 ZC820 ZC821 ZC822 ZC823 ZC824
Contextual Info: E-LINE DIODE SPECIFICATIONS SCH O TTK Y BARRIER DIO DES These devices have a high breakdown voltage and ultra fast switching capabilities. R.F. applications include low noise mixers, large and small signal detectors, limiters and discriminators. Applications

ZBF579

Contextual Info: ZBF569 ZBF579 SOT23 PNP SILICON PLANAR R.F. TRANSISTORS FEATURES. * HIGH fr UP TO 2.4GHz. * LOW NOISE <3.3dB AT 500MHz PARTMARKING DETAILS ZBF569 - F69 ZBF579 - F79 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL ZBF569 ZBF579 UNIT Collector-Base Voltage VcBO 35

SPSD

Contextual Info: PHASE LOCKED OSCILLATOR MODULES MLO-27700 & MLO-27800 Series MINIATURE PHASE LOCKED OSCILLATOR MODULES PLVCO MLO-27800 PLVCXO MLO-27700 FEATURES ♦ Miniaturised ♦ Low Phase Noise ♦ Low Power Consumption ♦ Proven Synthesiser Building Blocks Full Size

ZTX3866

Abstract: ZTX325 ZTX327 2N2708 Transistor 2N3866 2N3866 2N4427 2N918 BFS17 BFY90
Contextual Info: R.F. TRANSISTORS AND DIODES TABLE 1 : NPN RF TRANSISTORS TO 1 WATT The transistors shown in this table are suitable for use in a wide range of high frequency applications where high fT, low noise and low intermodulation distortion features are required. Typical applications include UHF/VHF amplifiers, communications equipments, domestic and automotive

ztx323

Abstract: HF transistors table ZTX327 ZTX325
Contextual Info: R.F. TR A N S IS T O R S A N O DIODES TABLE 1: NPN RF TRANSISTORS TO 1 WATT The transistors shown in this table are suitable for use in a wide range o f high frequency applications where high f T, low noise and low intermodulation distortion features are required.

radar block diagram

Contextual Info: INTEGRATED TX/R X FRONT END MLTR-1300 PULSED RADAR R.F. HEAD ASSEMBLY 4 TO 8 GHz FEATURES ♦ High Stability ♦ Low Power Consumption ♦ High Gain ♦ Low Noise Figure ♦ High Output Power DESCRIPTION M LTR-1300 Series Pulsed T ransm itter/R eceivers interface at antenna and baseband in radar systems

E288CC

Contextual Info: PHILIPS SQ |Ë288CC| SPECIAL QUALITY. LONG LIFE DOUBLE TRIODE with high mutual conductance and low noise for use in cascode circuits, in R.F. or X.F. amplifiers HEATIKQ Indirect by A.C. or D.C.; parallel supply Heater voltage Vf = 6.3 V Heater current If • 475 mA

CP640

Abstract: TELEDYNE CRYSTALONICS TMF18 2SC140
Contextual Info: POW RFET CP640 SILICON EPITAXIAL JUNCTION N-CHANNEL FIELD EFFECT TRANSISTOR GEOMETRY 424, PG. 58 • FOR HIGH DYNAMIC RANGE R.F. AMPLIFIERS • SPECIFIED FOR H.F. BAND - USEABLE THRU 400 MHz • LOW NOISE FIGURE DIRECT FROM 50 Ohm LINE ELECTRICAL D ATA