LOW NOISE HIGH VOLTAGE TRANSISTOR Search Results

Contextual Info: BFP520 Low Noise Silicon Bipolar RF Transistor • Low noise amplifier designed for low voltage 3 applications, ideal for 1.2 V or 1.8 V supply 2 4 voltage. Supports Vcc = 2.9 V with enough 1 external collector resistance. • High gain and low noise at high frequencies

LM4140

Abstract: tokin multilayer ceramic capacitor tokin ceramic 1e225zy5u-c203-f
Contextual Info: LM4140 LM4140 High Precision Low Noise Low Dropout Voltage Reference Literature Number: SNVS053D LM4140 High Precision Low Noise Low Dropout Voltage Reference General Description Features The LM4140 series of precision references are designed to combine high accuracy, low drift and noise with low power

Contextual Info: LM6311 LM6311 Low Noise High Speed Voltage Feedback Operational Amplifier Literature Number: SNOS790A LM6311 Low Noise High Speed Voltage Feedback Operational Amplifier General Description Features The LM6311 is a low noise voltage feedback operational amplifier with low distortion This makes the LM6311 ideal

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Smatl Signal Line MRF927T1 MRF927T3 NPN Silicon Low Voltage, Low Current, Low Noise, High-Frequency Transistors lc = 10 mA LOW NOISE HIGH FREQUENCY TRANSISTOR Designed for use in low voltage, low current applications at frequencies to

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2240G Silicon NPN epitaxial planar type For high breakdown voltage low-frequency and low-noise amplification • Package • High collector-emitter voltage (Base open) VCEO • Low noise voltage NV

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1821G Silicon NPN epitaxial planar type For high breakdown voltage low-frequency and low-noise amplification • Package • High collector-emitter voltage (Base open) VCEO • Low noise voltage NV

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2240G Silicon NPN epitaxial planar type For high breakdown voltage low-frequency and low-noise amplification • Package • High collector-emitter voltage (Base open) VCEO • Low noise voltage NV

Contextual Info: PN2483, PN2484 LOW LEVEL, LOW NOISE NPN SILICON PLANAR TRANSISTORS FEATURES APPLICATIONS • High Breakdown Voltage BV^-gg . . . 6 0 V • Low Level, 'Low Noise Am plifier • High Gain hpg . . . 2 0 0 @ 500m>A ■ Audio Through High Frequency Ranges • Low Noise N.F. . . . 3 dB

amplifier marking ADK

Contextual Info: NCV8570B 200 mA, Ultra Low Noise, High PSRR, LDO, Linear Voltage Regulator The NCV8570B is a 200 mA Low Dropout, Linear Voltage Regulator with ultra low noise characteristics. It’s low noise combined with high Power Supply Rejection Ratio PSRR make it especially

2SA921

Abstract: 2SA92 2SC1980 2SC198
Contextual Info: Transistor 2SA921 Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SC1980 Unit: mm 5.0±0.2 High collector to emitter voltage VCEO. Low noise voltage NV. • Absolute Maximum Ratings Ta=25˚C Parameter

18082 al

Contextual Info: NCV8570B 200 mA, Ultra Low Noise, High PSRR, LDO, Linear Voltage Regulator The NCV8570B is a 200 mA Low Dropout, Linear Voltage Regulator with ultra low noise characteristics. It’s low noise combined with high Power Supply Rejection Ratio PSRR make it especially

2SC1980

Abstract: TRANSISTOR 2SC1980 2SA921
Contextual Info: Transistor 2SC1980 Silicon NPN epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SA921 Unit: mm 5.0±0.2 High collector to emitter voltage VCEO. Low noise voltage NV. • Absolute Maximum Ratings Ta=25˚C Parameter

2SA0921

Abstract: 2SA921 2SC1980 TRANSISTOR 2sc1980
Contextual Info: Transistor 2SC1980 Silicon NPN epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SA0921 2SA921 Unit: mm 5.0±0.2 High collector to emitter voltage VCEO. Low noise voltage NV. • Absolute Maximum Ratings (Ta=25˚C)

2SD1821

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1821 Silicon NPN epitaxial planar type For high breakdown voltage low-frequency and low-noise amplification • Package  High collector-emitter voltage (Base open) VCEO  Low noise voltage NV

2SA0921

Abstract: 2SA921 2SC1980
Contextual Info: Transistor 2SA0921 2SA921 Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SC1980 Unit: mm 5.0±0.2 High collector to emitter voltage VCEO. Low noise voltage NV. • Absolute Maximum Ratings (Ta=25˚C)

2SA0921

Abstract: 2SA921 2SC1980
Contextual Info: Transistors 2SA0921 2SA921 Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SC1980 Unit: mm 4.0±0.2 • High collector-emitter voltage (Base open) VCEO • Low noise voltage NV 0.7±0.2 • Features

2SD1821A

Abstract: S-Mini3-G1
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1821A Silicon NPN epitaxial planar type For high breakdown voltage low-frequency and low-noise amplification • Package  High collector-emitter voltage (Base open) VCEO  Low noise voltage NV

2SD1821

Abstract: 2SD1821A
Contextual Info: Transistor 2SD1821, 2SD1821A Silicon NPN epitaxial planar type 0.425 Unit: mm For high breakdown voltage low-frequency and low-noise amplification 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5° 1.25±0.10 • High collector to emitter voltage VCEO • Low noise voltage NV

General Semiconductor diode marking 49

Abstract: NCV8570BSN18T1G ncv8570 marking AK
Contextual Info: NCV8570B 200 mA, Ultra Low Noise, High PSRR, LDO, Linear Voltage Regulator The NCV8570B is a 200 mA Low Dropout, Linear Voltage Regulator with ultra low noise characteristics. It’s low noise combined with high Power Supply Rejection Ratio PSRR make it especially

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1821A Silicon NPN epitaxial planar type For high breakdown voltage low-frequency and low-noise amplification • Package  High collector-emitter voltage (Base open) VCEO  Low noise voltage NV

337 transistor

Abstract: 2SC1980 2SA921 Gv-80dB
Contextual Info: Transistor 2SC1980 Silicon NPN epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SA921 Unit: mm 5.0±0.2 4.0±0.2 High collector to emitter voltage VCEO. Low noise voltage NV. 0.7±0.2 ● • Absolute Maximum Ratings

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1821 Silicon NPN epitaxial planar type For high breakdown voltage low-frequency and low-noise amplification • Package  High collector-emitter voltage (Base open) VCEO  Low noise voltage NV

Contextual Info: Transistors 2SA0921 2SA921 Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SC1980 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 • High collector-emitter voltage (Base open) VCEO • Low noise voltage NV 0.7±0.2

2SB0792

Abstract: 2SB0792A Marking Code 2FR
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0792A Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification • Package  High collector-emitter voltage (Base open) VCEO  Low noise voltage NV