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    LOW CAPACITANCE BJT Search Results

    LOW CAPACITANCE BJT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GC321AD7LP103KX18J Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GC331AD7LQ153KX18J Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GC331CD7LQ473KX19K Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GC343DD7LP334KX18K Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GC355DD7LQ224KX18K Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd

    LOW CAPACITANCE BJT Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    transistor on 4409

    Abstract: NEC k 3654 PIN CONNECTIONS OF IC 4047 NE687 S21E UPA861TD UPA861TD-T3 Transistor NEC K 3654
    Text: NEC's NPN SILICON RF TWIN TRANSISTOR FEATURES OUTLINE DIMENSIONS • LOW VOLTAGE, LOW CURRENT OPERATION • LOW CAPACITANCE FOR WIDE TUNING RANGE • SMALL PACKAGE OUTLINE: 1.2 mm x 0.8 mm 1.0±0.05 0.8 +0.07 -0.05 6 B1 5 Q1 5 2 E2 3 Q2 4 B2 PIN CONNECTIONS


    Original     		UPA861TD NE894 NE687 transistor on 4409 NEC k 3654 PIN CONNECTIONS OF IC 4047 S21E UPA861TD-T3 Transistor NEC K 3654 PDF

    NE687

    Abstract: S21E UPA861TD UPA861TD-T3 vaf meter transistor on 4409
    Text: NPN SILICON RF TWIN TRANSISTOR FEATURES OUTLINE DIMENSIONS • LOW VOLTAGE, LOW CURRENT OPERATION • LOW CAPACITANCE FOR WIDE TUNING RANGE • SMALL PACKAGE OUTLINE: 1.2 mm x 0.8 mm 1.0±0.05 0.8 +0.07 -0.05 6 B1 5 Q1 5 2 3 E2 Q2 4 B2 PIN CONNECTIONS 1. Collector Q1


    Original     		UPA861TD NE894 NE687 S21E UPA861TD-T3 vaf meter transistor on 4409 PDF

    NF024

    Abstract: transistor on 4409 Transistor NEC K 3654 NE687 S21E UPA861TD UPA861TD-T3-A 024BF
    Text: NEC's NPN SILICON RF TWIN TRANSISTOR FEATURES OUTLINE DIMENSIONS • LOW VOLTAGE, LOW CURRENT OPERATION • LOW CAPACITANCE FOR WIDE TUNING RANGE • SMALL PACKAGE OUTLINE: 1.2 mm x 0.8 mm 0.8 +0.07 -0.05 C2 Q1 6 B1 5 2 E2 3 Q2 4 B2 PIN CONNECTIONS 1. Collector Q1


    Original     		UPA861TD NE894 NE687 NF024 transistor on 4409 Transistor NEC K 3654 S21E UPA861TD-T3-A 024BF PDF

    NX3008NBKMB

    Abstract: IP4303CX4 PCMF2DFN1
    Text: Safeguard sensitive ICs - Increase battery life - Save space With NXP key products as recommended in this brochure Interface / Function Description Product type Package NFC antenna protection 18 / 24 V Birectional low capacitance ESD protection diode PESD18VF1BL


    Original     		PESD18VF1BL PESD24VF1BL PESD18VF1BSF PESD24VF1BSF DFN1006 DSN0603 DFN2520 DFN4020 NX3008NBKMB IP4303CX4 PCMF2DFN1 PDF

    supercapacitor

    Abstract: ZXT13N50DE6 supercap CAPACITOR 394J GS206 ZXM64NO2X balancing circuit for supercapacitor supercapacitor alternative to battery flash led circuit diagram ZXSC100
    Text: CAP-XX APPLICATION NOTE No. 1004 Driving High-Power White LED Flash in Camera Phones Outline Supercapacitors with low ESR Equivalent Series Resistance and high capacitance are ideal components for use in pulsed-power applications, such as Flash LEDs and GPRS transmitters,


    Original     		AN1004 31-May-2005 supercapacitor ZXT13N50DE6 supercap CAPACITOR 394J GS206 ZXM64NO2X balancing circuit for supercapacitor supercapacitor alternative to battery flash led circuit diagram ZXSC100 PDF

    "CHAPTER 1 Introduction to Power Semiconductors"

    Abstract: CHAPTER 1 Introduction to Power Semiconductors APPCHP1 common emitter bjt application and circuit "Power Semiconductor Applications" Philips BJT with V-I characteristics BJT characteristics common emitter bjt Bipolar Junction Transistor Low Capacitance bjt
    Text: BJT Primary Switch Ratings In RDFC Applications Application Note AN-2337 When the transistor is off and a high collector voltage is applied, the electric field between base and collector causes depletion of this N- region and turns it into an insulator. The voltage


    Original     		AN-2337 DS-1423) AN-2497) AN-2337-0904 07-Apr-2009 "CHAPTER 1 Introduction to Power Semiconductors" CHAPTER 1 Introduction to Power Semiconductors APPCHP1 common emitter bjt application and circuit "Power Semiconductor Applications" Philips BJT with V-I characteristics BJT characteristics common emitter bjt Bipolar Junction Transistor Low Capacitance bjt PDF

    DMOSFET

    Abstract: ZCP0545A
    Text: P-CHANNEL ENHANCEMENT MODE VERTICAL IGBT ZCP0545A ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . MAX. This IGBT combines the high input impedance of the DMOSFET with the high current density of the BJT. PARAMETER SYMBOL MIN. UNIT CONDITIONS.


    Original     		ZCP0545A DMOSFET ZCP0545A PDF

    SIT Static Induction Transistor

    Abstract: create uhf vhf tv matching transformer AR165S Granberg AR-165S power bjt advantages and disadvantages all mosfet vhf power amplifier narrow band rf POWER BJTs mrf154 amplifier bjt ce amplifier
    Text: Order this document by AN1529/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN1529 RF Power Circuit Concepts Using FETs and BJTs Prepared by: H. O. Granberg Principal Staff Engineer Motorola Semiconductor Products Sector Phoenix, Arizona Similarities and differences in RF power circuits using silicon Field Effect Transistors and Bipolar Junction Transistors are discussed along with their characteristics and performance. The discussion is limited to amplifiers and multipliers. Oscillators are usually designed for low signal levels, which are then amplified. Although power oscillators are


    Original     		AN1529/D AN1529 AN1529/D* SIT Static Induction Transistor create uhf vhf tv matching transformer AR165S Granberg AR-165S power bjt advantages and disadvantages all mosfet vhf power amplifier narrow band rf POWER BJTs mrf154 amplifier bjt ce amplifier PDF

    IGBT/MOSFET Gate Drive

    Abstract: IGBT PNP power BJT anti saturation diode Gate Drive Optocoupler optocoupler drive relay IGBT gate drive for a boost converter IGBT gate driver ic high side MOSFET driver optocoupler IGBT cross igbt dc to dc converter capacitor charging
    Text: VISHAY SEMICONDUCTORS Optocouplers and Solid-State Relays Application Note IGBT/MOSFET Gate Drive Optocoupler INTRODUCTION TO IGBT The Insulated Gate Bipolar transistor IGBT is a cross between a MOSFET (metal oxide semiconductor field effect transistor) and a BJT (bipolar junction transistor) since it


    Original     		20-May-09 IGBT/MOSFET Gate Drive IGBT PNP power BJT anti saturation diode Gate Drive Optocoupler optocoupler drive relay IGBT gate drive for a boost converter IGBT gate driver ic high side MOSFET driver optocoupler IGBT cross igbt dc to dc converter capacitor charging PDF

    Drive Base BJT

    Abstract: Low Capacitance bjt Transistor BJT High Current bjt specifications bjt high voltage Cambridge capacitor capacitors power BJT TRANSISTORS BJT list AN-2337 AN2576
    Text: Testing Key Parameters of High Voltage BJTs for RDFC Applications Application Note AN-2576 INTRODUCTION Certain primary switch BJT parameters are particularly important for correct operation and longterm reliability of RDFC designs. : • Current gain hFE


    Original     		AN-2576 AN-2337 AN-2576-0809A 25-Sep-2008 Drive Base BJT Low Capacitance bjt Transistor BJT High Current bjt specifications bjt high voltage Cambridge capacitor capacitors power BJT TRANSISTORS BJT list AN-2337 AN2576 PDF

    Untitled

    Abstract: No abstract text available
    Text: SUM201MN P-Channel MOSFET + PNP BJT Integrated Power MOSFET with PNP Low VCE sat Switching Transistor DFN-8 This integrated device represents a new level of safety and board−space reduction by combining the 20V P−Channel FET with a PNP Silicon Low VCE(sat) switching transistor. This newly integrated


    Original     		SUM201MN KSD-T6T002-001 PDF

    Untitled

    Abstract: No abstract text available
    Text: SUM202MN P-Channel MOSFET + PNP BJT Integrated Power MOSFET with PNP Low VCE sat Switching Transistor DFN-8 This integrated device represents a new level of safety and 8 board−space reduction by combining the 20V P−Channel FET with a 1 PNP Silicon Low VCE(sat) switching transistor. This newly integrated


    Original     		SUM202MN KSD-T6T001-002 PDF

    12V 10A BJT

    Abstract: Logic Level Gate Drive mosfet SUM202MN SUM202 BJT IC Vce power BJT PNP BJT pnp 45V Drive Base BJT Low Capacitance bjt BJT IC Vce 5v
    Text: SUM202MN P-Channel MOSFET + PNP BJT Integrated Power MOSFET with PNP Low VCE sat Switching Transistor DFN-8 This integrated device represents a new level of safety and 8 board−space reduction by combining the 20V P−Channel FET with a 1 PNP Silicon Low VCE(sat) switching transistor. This newly integrated


    Original     		SUM202MN KSD-T6T001-001 12V 10A BJT Logic Level Gate Drive mosfet SUM202MN SUM202 BJT IC Vce power BJT PNP BJT pnp 45V Drive Base BJT Low Capacitance bjt BJT IC Vce 5v PDF

    bjt specifications

    Abstract: TRANSISTORS BJT list DG-2128 DG2128 POWER BJTs common base bjt DS-1639 CAMSEMI common emitter bjt TRANSISTOR REPLACEMENT table for transistor
    Text: Power BJT Specification for RDFC Applications Application Note AN-2276 RDFC Circuit Description ABSTRACT This application note provides key parametric requirements of power BJTs suitable for Resonant Discontinuous Forward Converter RDFC applications. As the main power switch, the BJT


    Original     		AN-2276 AN-2276-0904 07-Apr-2009 bjt specifications TRANSISTORS BJT list DG-2128 DG2128 POWER BJTs common base bjt DS-1639 CAMSEMI common emitter bjt TRANSISTOR REPLACEMENT table for transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: HY62V8400 Series 5 1 2 K x g bjt C M Q S SR A M »HYUNDAI PRELIMINARY DESCRIPTION The HY62V8400 is a high-speed, low power and 524,288 x 8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. The HY62V8400 has a data retention mode that guarantees


    OCR Scan     		HY62V8400C HY62V8400 55/70/85/100ns -100/120/150/200ns 45defl 10E03-11 MAY94 4b750fifi PDF

    diagrama power

    Abstract: No abstract text available
    Text: MITSUBISHI LS Is M5M4V4800J,TP,RT-6,-7,-8,-6S,-7S,-8S FAST PAGE MODE 4194304-BJT 524288-WORD BY 8-BIT DYNAMIC RAM DESCRIPTION This is a family of 524288-word by 8-bit dynamic RAMs, fabricated with the high performance CMOS process, and is ideal for large-capacity memory systems where high speed,


    OCR Scan     		M5M4V4800J 4194304-BJT 524288-WORD diagrama power PDF

    MSM5118160D

    Abstract: SOJ42-P-400-1
    Text: O K I Semiconductor M S M 5 1 1 8 1 6 0 D 1rM 8,576-W onJ x 16-BJt DYNAJMC RAM : FAST PAOE MODE TYPE DESCRIPTION The MSM5118160D is a 1,048,576-word x 16-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The MSM5118160D achieves high integration, high-speed operation, and low-power consumption


    OCR Scan     		MSM5118160D 16-BJt MSM5118160D 576-word 16-bit 42-pin 50/44-pin SOJ42-P-400-1 PDF

    LDMOS

    Abstract: LDMOS digital bipolar junction transistor "RF Power Transistors" mosfet high power rf ldmos AN1223 amplitude modulation applications
    Text: AN1223 Application note RF power transistors: comparative study of LDMOS versus bipolar technology Introduction RF power transistors consist of two type of devices: Bipolar Junction BJT and Field Effect (FET). Due to differences in technology, the bipolar junction transistor yields superior


    Original     		AN1223 LDMOS LDMOS digital bipolar junction transistor "RF Power Transistors" mosfet high power rf ldmos AN1223 amplitude modulation applications PDF

    RT8110

    Abstract: TSOT23-8
    Text: RT8110 Compact Synchronous Buck DC/DC PWM Controller General Description Features The RT8110 is a compact fixed-frequency PWM controller with integrated MOSFET drivers for single-phase synchronous buck converter. This part features wide input voltage range operation and tiny package. An internal preregulator drives an external BJT to provide regulated output


    Original     		RT8110 RT8110 400kHz DS8110-02 TSOT23-8 PDF

    IGBT PIN CONFIGURATION

    Abstract: GN2470 400CA IC SR03x 700V mos GN2470K4-G SR036 SR037 B1130 SR03x
    Text: GN2470 IGBT Insulated Gate Bipolar Transistor Features General Description The Supertex GN2470 is a 700V, 3.5amp insulated gate bipolar transistor IGBT that combines the positive aspects of both BJTs and MOSFETs. ► Low voltage drop at high currents ► Optimized for use with the Supertex SR036 and


    Original     		GN2470 SR036 SR037 O-252 SR036 1N4001 IGBT PIN CONFIGURATION 400CA IC SR03x 700V mos GN2470K4-G B1130 SR03x PDF

    rt8110

    Abstract: DS8110-00 BJT 2n3904 2N3904 Drive Base BJT 2N3904 hfe
    Text: RT8110 Compact Synchronous Buck DC/DC PWM Controller General Description Features The RT8110 is a compact fixed-frequency PWM controller with integrated MOSFET drivers for single-phase synchronous buck converter. This part features wide input voltage range operation and tiny package. An internal preregulator drives an external BJT to provide regulated output


    Original     		RT8110 J-STD-020. TSOT-23-8 DS8110-00 rt8110 BJT 2n3904 2N3904 Drive Base BJT 2N3904 hfe PDF

    Untitled

    Abstract: No abstract text available
    Text: GN2470 IGBT Insulated Gate Bipolar Transistor Features General Description The Supertex GN2470 is a 700V, 3.5amp insulated gate bipolar transistor IGBT that combines the positive aspects of both BJTs and MOSFETs. Low voltage drop at high currents Industry standard TO-252 (D-Pak) package


    Original     		GN2470 GN2470 O-252 DSFP-GN2470 A100208 PDF

    GN2470

    Abstract: GN2470K4-G
    Text: GN2470 IGBT Insulated Gate Bipolar Transistor Features General Description The Supertex GN2470 is a 700V, 3.5amp insulated gate bipolar transistor IGBT that combines the positive aspects of both BJTs and MOSFETs. ► Low voltage drop at high currents ► Industry standard TO-252 (D-Pak) package


    Original     		GN2470 GN2470 O-252 DSFP-GN2470 A100208 GN2470K4-G PDF

    IXAN0061

    Abstract: Abdus Sattar, Vladimir Tsukanov, "Power MOSFETs JA BJT depletion mode power mosfet mosfet depletion power bjt datasheet POWER BJTs transconductance mosfet Drive Base BJT BJT with i-v characteristics
    Text: IXAN0061 Power MOSFET Basics Abdus Sattar, IXYS Corporation Power MOSFETs have become the standard choice for the main switching devices in a broad range of power conversion applications. They are majority carrier devices with no minority carrier injection, superior to Power Bipolar Junction Transistors BJTs and


    Original     		IXAN0061 AN10273 IXAN0061 Abdus Sattar, Vladimir Tsukanov, "Power MOSFETs JA BJT depletion mode power mosfet mosfet depletion power bjt datasheet POWER BJTs transconductance mosfet Drive Base BJT BJT with i-v characteristics PDF