Untitled
Abstract: No abstract text available
Text: Work-In-Progress Option Information www.vishay.com Vishay Siliconix MIL-PRF-19500 JAN/TX/TXV Process Test Conditions per MIL-STD-750 JAN JANTX JANTXV WAFER LOT ACCEPTANCE WAFER LOT ACCEPTANCE WAFER LOT ACCEPTANCE PRESEAL INSPECTION M-2072 LOT NORM THERMAL IMPEDANCE
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MIL-PRF-19500
MIL-STD-750
M-2072
M-1032,
M-1051
M-2006,
M-1042
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SHARP "lot code"
Abstract: Photointerrupter Photointerrupter sharp photointerrupters SHARP
Text: Lot Codes Photointerrupter Product Information Reading Photointerrupter Lot Codes PHOTOINTERRUPTER LOT CODES EXAMPLE LOT CODES SHARP Photointerrupters are marked with a lot code, consisting of a SHARP designation, a production year digit, and a production month digit or letter.
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SHARP "lot code"
Abstract: reading of of optical fiber Lot Codes
Text: Lot Codes Plastic Optical Fiber Product Information Reading Plastic Optical Fiber Lot Codes PLASTIC OPTICAL FIBER LOT CODES EXAMPLE LOT CODES SHARP Plastic Optical Fiber devices are marked with a lot code, consisting of a SHARP designation, a production year digit, and a production month digit or
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Unisem
Abstract: MIC2563A MP8000C MP-8000
Text: UNISEM M BERHAD RELIABILITY & QUALITY ASSURANCE Co. No.: 183314-V QUALIFICATION LOT LABORATORY REPORT DESCRIPTION: MICREL LEAD-FREE PACKAGE SOLDERABILTY (MATTE TIN) LOT INFORMATION: Customer Package Device Lot # Serial # Die Attach Mold Comp. Date Code Pad Size
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83314-V
28SSOP
MIC2563A
3A3275M42
SS16149
MP8000C
9-Dec-03
QU-2003-0144
Unisem
MIC2563A
MP8000C
MP-8000
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transistor marking JB
Abstract: MMBTA44 JB SOT23 SOT23 MARKING 5B marking H8 SOT-23
Text: SEMICONDUCTOR MMBTA44 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 1 No. APX 0 1 2. Marking 2 Item Marking Description Device Mark APX MMBTA44 hFE Grade - - * Lot No. 01 2002. 1st Week Note * Lot No. marking method Lot No. Description
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MMBTA44
OT-23
transistor marking JB
MMBTA44
JB SOT23
SOT23 MARKING 5B
marking H8 SOT-23
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c 3421 transistor
Abstract: 010-0041 IC350 power IGBT HTGB MSAGA11F120D
Text: MSAGA11F120D WAFER LOT EVALUATION INTERNAL PROCESS SPECIFICATION IPS REV. 0, Approval _N/C_ QC LOT#:_ LOT DATE CODE:_ QUANTITY ISSUED:_ QUANTITY REQUIRED:_ SUMMARY MICROSEMI MSAGA11F120D data sheet REVISION:
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MSAGA11F120D
MSAGA11F120D
discretes\msae\MSAFX10N100AS
c 3421 transistor
010-0041
IC350
power IGBT
HTGB
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PDF
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2N7002K
Abstract: E5 marking sot23 6 wc sot23 marking EA SOT23 E2- marking h8 marking sot23 marking JB E5 Marking Marking E5 JA MARKING SOT23
Text: SEMICONDUCTOR 2N7002K MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 1 No. WC 0 1 2. Marking 2 Item Marking Description Device Mark WC 2N7002K * Lot No. 01 Manufacturing date Year/Week Note) * Lot No. marking method * : Lot No. marking method
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2N7002K
OT-23
2N7002K
E5 marking sot23
6 wc sot23
marking EA SOT23
E2- marking
h8 marking
sot23 marking JB
E5 Marking
Marking E5
JA MARKING SOT23
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Z02W100V
Abstract: Mark 10A
Text: SEMICONDUCTOR Z02W100V MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 1 No. 10A 0 A 2. Marking 2 Item Marking Description Device Mark 10A Z02W100V * Lot No. 0A 2007. 1st Week Note * Lot No. marking method Lot No. Description 01, 02 .51, 52
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Z02W100V
OT-23
Z02W100V
Mark 10A
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marking m1
Abstract: KTK919S SOT23 MARKING M1 M1 MARKING sot-23 Marking m1 sot23 marking JB
Text: SEMICONDUCTOR KTK919S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 1 No. M1 0 1 2. Marking 2 Item Marking Description Device Mark M1 KTK919S * Lot No. 01 2006. 1st Week Note * Lot No. marking method Lot No. Description 01, 02 .51, 52
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KTK919S
OT-23
marking m1
KTK919S
SOT23 MARKING M1
M1 MARKING
sot-23 Marking m1
sot23 marking JB
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AT83C24
Abstract: No abstract text available
Text: Active Errata List Errata History Lot Number Errata List P01752 and P01753 1, 2, 3, 4, 5, 7 A2306F and A2306G 4, 5, 6, 7 A02306Q or above Lot with index 3 on package 4, 6, 7 Lot with index 4 on package No erratas for these lots Smart Card Reader ICs Errata Description
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P01752
P01753
A2306F
A2306G
A02306Q
AT83C24
4283D
AT83C24
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Untitled
Abstract: No abstract text available
Text: Surface Mount Voltage Variable Attenuators Configuration, Dimensions Unit : mm VVA001 Series 2.0 10.0 2.5 2.5 2.5 VVA541 Series V VA 5 4 A A - 1 5 0 0 - G 5.0 5.0 1.27 1.27 1.27 1.27 1.27 1.27 Lot No. 4.5 Lot No. Lot No. 1 Pin Mark 1.7 A-15 A21 4.5 10.0 V VA0 8 75
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VVA001
VVA541
VVA001E-0290-G
VVA001G-0545-G
1000pF)
VVA54AA-1500-G
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HFQS68
Abstract: HFQS79
Text: Microwave Modules 05.05.30 PLL Modules PART NO. MANUFACTURER'S MARK AND LOT NO. PART NO. MANUFACTURER'S MARK AND LOT NO. 7 14 D1 2 3 1 2 3 4 7.8±0.2 6 Lot No. D: Factory Code 1: End figure of the Christian Era. 2, 3: Week No. 1.8 max. 4 5 14 6 13 7 12 11 10 9
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HFQS68
HFQS79
5900MHz
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MIC2506
Abstract: JESD78 1000H MIC2506BM
Text: RELIABILITY REPORT REPORT DATE: 12/08/03 QUALITY ENG : PURPOSE: Herb Grimm MIC2506BM 408 435-3476 Project 95006-xx QUAL VEHICLES : MIC2506- lot 1 PACKAGE TYPE : 8L SOIC LOT # FAB LOC D/C # PROCESS 7B5484 Fortune Dr. San Jose 9740 BCDSI MIC2506- lot 2 5A6065
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MIC2506BM
95006-xx
MIC2506-
7B5484
5A6065
5A5589
MIC2505/2506
1000H
MIC2506
JESD78
1000H
MIC2506BM
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Untitled
Abstract: No abstract text available
Text: SJ114364 CONTACT FINISH 接点仕上げ A:Au 0.13 m MIN B:Au(0.25μm MIN) PRODUCT HEIGHT 製品高さ 120:1.2mm (-) F a 1.2 ±0.05 d 0.5 PIN 2 0.3 ±0.03 0.1 J PIN 1 (Ex. LOT NO.) C TABLE 2.LOT NUMBER CODE OF CURRENT DAY (END OF LOT No.) 3 3 4 4 5 5 6 6
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DCF-C-213H
26/JUN/2014
SJ114364
SM3ZS067B120â
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6T SRAM qual
Abstract: l0225 quality and reliability report 106 M1 A 1837 140C V121 V212 eprom 2808 634E-03
Text: Quality and Reliability Report 8.1 Device Reliability Test Data – SRAM, LOGIC, EPROM Hot Carrier Effect Test 1. SRAM Processes 1.1 0.4µm/3.3V SRAM DPDM Process Life Time 1st Qual. Lot 2nd Qual. Lot 3rd Qual Lot Pass/Fail 85.8 Years 72.7 Years 90.3 Years
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1000hrs
6T SRAM qual
l0225
quality and reliability report
106 M1
A 1837
140C
V121
V212
eprom 2808
634E-03
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Untitled
Abstract: No abstract text available
Text: 版数 VER. SJ114364 CONTACT FINISH 接点仕上げ A:Au 0.13 m MIN B:Au(0.25μm MIN) PRODUCT HEIGHT 製品高さ 120:1.2mm G- CL D 0.5 (PITCH) 0.5 (PITCH) 1 ±0.2 RT 10° IO N AN G 18.5 d 0.5 PIN 2 0.3 ±0.03 0.1 J PIN 1 (Ex. LOT NO.) C TABLE 2.LOT NUMBER CODE OF CURRENT DAY (END OF LOT No.)
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SJ114364
SM3ZS067B120â
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smd BAV20
Abstract: 1N4004 smd 5KE200CA 1n5401 smd 1N4004-T 1N5401-B 1.5KE200CA 1.5KE200CA-T 1N4728A-A LL4148-7
Text: Product Label Specification Label Placement/Dimensions, Definitions, & Part Designation 1.50" STANDARD PRODUCT LABEL 4.00" P/N: 1.5KE200CA-T LOT: 001834B4 002 02 1 D/C: 2002 QTY: 50000 PRODUCT LABEL FIELD FORMAT AND CODES INFORMATION LABEL FIELD LOT NO DATE CODE
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5KE200CA-T
001834B4
AP02006
smd BAV20
1N4004 smd
5KE200CA
1n5401 smd
1N4004-T
1N5401-B
1.5KE200CA
1.5KE200CA-T
1N4728A-A
LL4148-7
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR PF2015UDF12B MARKING SPECIFICATION UDFN-12B PACKAGE 1. Marking method Laser Marking 1 No. T8 0A 2. Marking 2 Item Marking Description Device Mark T8 PF2015UDF12B * Lot No. 0A 2007. 1st Week [0:1st Character, A:2nd Character] Note * Lot No. marking method
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PF2015UDF12B
UDFN-12B
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KTK920BT
Abstract: No abstract text available
Text: SEMICONDUCTOR KTK920BT MARKING SPECIFICATION TSQ PACKAGE 1. Marking method Laser Marking 1 No. MB 0A 2. Marking 2 Item Marking Description Device Mark MB KTK920BT Lot No.* 0A 2007. 1st Week [0:1st Character, A:2nd Character] Note * Lot No. marking method
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KTK920BT
KTK920BT
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KRC235S
Abstract: No abstract text available
Text: SEMICONDUCTOR KRC235S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking NNB No. 1 Item Marking Device Mark NNB KRC235S - - - * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method
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KRC235S
OT-23
R1998.
KRC235S
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR PF1005UDF12 MARKING SPECIFICATION UDFN-12 PACKAGE 1. Marking method Laser Marking 1 No. T1 0A 2. Marking 2 Item Marking Description Device Mark T1 PF1005UDF12 * Lot No. 0A 2007. 1st Week [0:1st Character, A:2nd Character] Note * Lot No. marking method
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PF1005UDF12
UDFN-12
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marking 8b sot-23
Abstract: MMBZ5227B 8B MMBZ5227B 8B sot23
Text: SEMICONDUCTOR MMBZ5227B MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking 8B No. 1 Item Marking Device Mark 8B MMBZ5227B - - - * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method
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MMBZ5227B
OT-23
marking 8b sot-23
MMBZ5227B 8B
MMBZ5227B
8B sot23
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mark 5503 MOSFET
Abstract: m233 transistor TH-3 TH-4 TH-6 transistor m236
Text: / Dimensions mm Lead-1 Lead-1 A Lead-2 Lead-2A Lead-3 Lead-3A Voltage dass, Lot No. 'A \ aO.E 25 min. Lead-4 Cathode mark class, Lot No. 03.0 5.0 ^ \ 00.8 Cathode mark / 25 min. 28 min. Lead-5A Voltage class, Lot No. -1*4- 5.0 03.0 28 min. Lead-6 Voltage dass, Lot No.
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OCR Scan
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Lead-10
Lead-11
Lead-12
Lea04A
R605A
R606A
R607A
M24-1F/R
15kg-cm
M24-2F/R
mark 5503 MOSFET
m233 transistor
TH-3 TH-4 TH-6
transistor m236
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P344L
Abstract: No abstract text available
Text: •External Dimensions unit : mm Fig. 2 Fig. 1 Fig. 3 6.0max 2 .0 ° 3.0 a. Type 0.6 b. Lot No. Case temperature measurement point P 1 .7 t<,7x 4 = 6.8107 1 a. Type 5.45 b. Lot No. ^ da C3 a c L- ,-1-#.- , a. Type b. Lot No. Forming N o . 1101
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OCR Scan
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056max
P344L
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