LOT CODE NE NEC Search Results

Contextual Info: SPA1118Z SPA1118Z 850MHz 1Watt Power Amplifier with Active Bias 850MHz 1WATT POWER AMPLIFIER WITH ACTIVE BIAS NOT FOR NEW DESIGNS Package: Exposed Pad SOIC-8 Product Description Features RFMD’s SPA1118Z is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic

Contextual Info: SPA1118Z SPA1118Z 850MHz 1Watt Power Amplifier with Active Bias 850MHz 1WATT POWER AMPLIFIER WITH ACTIVE BIAS NOT FOR NEW DESIGNS Package: Exposed Pad SOIC-8 Features Optimum Technology Matching Applied • VCC InGaP HBT N/C VBIAS SiGe BiCMOS Active Bias

Contextual Info: SPA1118Z SPA1118Z 850MHz 1Watt Power Amplifier with Active Bias 850MHz 1WATT POWER AMPLIFIER WITH ACTIVE BIAS NOT FOR NEW DESIGNS Package: Exposed Pad SOIC-8 Product Description Features Optimum Technology Matching Applied GaAs HBT VCC GaAs MESFET N/C InGaP HBT

AT880

Abstract: lot code RFMD
Contextual Info: SPA2118Z SPA2118Z 850MHz 1 Watt Power Amplifier with Active Bias 850MHz 1 WATT POWER AMPLIFIER WITH ACTIVE BIAS NOT FOR NEW DESIGNS Package: Exposed Pad SOIC-8 Product Description Features Optimum Technology Matching Applied • VC1 DE VBIAS Active Bias

Contextual Info: SPA2118Z SPA2118Z 850MHz 1 Watt Power Amplifier with Active Bias 850MHz 1 WATT POWER AMPLIFIER WITH ACTIVE BIAS NOT FOR NEW DESIGNS Package: Exposed Pad SOIC-8 Product Description Features RFMD’s SPA2118Z is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic

lot code RFMD

Abstract: ECB-101161
Contextual Info: SPA2118Z SPA2118Z 850MHz 1 Watt Power Amplifier with Active Bias 850MHz 1 WATT POWER AMPLIFIER WITH ACTIVE BIAS NOT FOR NEW DESIGNS Package: Exposed Pad SOIC-8 Features Optimum Technology Matching Applied • VC1 VBIAS Active Bias SiGe BiCMOS GaAs pHEMT

transistor 1p3

Abstract: SXA3318B SXA3318BZ sirenza rfmd AH03L MCH18 SXA-3318B TAJB104KLRH TAJB106K020R L350
Contextual Info: SXA-3318B Z SXA-3318B(Z) 400MHz to 2500MHz Balanced ½ W Medium Power GaAs HBT Amplifier 400MHz to 2500MHz BALANCED ½ W MEDIUM POWER GaAs HBT AMPLIFIER NOT FOR NEW DESIGNS RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Product Description Features Optimum Technology

transistor 1p3

Contextual Info: SXA-3318B Z SXA-3318B(Z) 400MHz to 2500MHz Balanced ½ W Medium Power GaAs HBT Amplifier 400MHz to 2500MHz BALANCED ½ W MEDIUM POWER GaAs HBT AMPLIFIER NOT FOR NEW DESIGNS RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Product Description Features RFMD’a SXA-3318B amplifier is a high efficiency GaAs Heterojunction

Contextual Info: SPA2318Z SPA2318ZLow Noise, High Gain SiGe HBT 1700MHz to 2200MHz 1 WATT POWER AMP WITH ACTIVE BIAS NOT FOR NEW DESIGNS Package: Exposed Pad SOIC-8 Product Description Features RFMD’s SPA2318Z is a high efficiency GaAs Heterojunction Bipolar Transistor HBT

an 214 amp schematic diagram

Abstract: ROHM MCR03 ECB-101161
Contextual Info: SPA2318Z SPA2318ZLow Noise, High Gain SiGe HBT 1700MHz to 2200MHz 1 WATT POWER AMP WITH ACTIVE BIAS NOT FOR NEW DESIGNS Package: Exposed Pad SOIC-8 Features GaAs MESFET      InGaP HBT VC1 Si BiCMOS VBIAS SiGe HBT GaAs pHEMT RFIN Si CMOS Si BJT

ECB-101161

Contextual Info: SPA2318Z SPA2318ZLow Noise, High Gain SiGe HBT 1700MHz to 2200MHz 1 WATT POWER AMP WITH ACTIVE BIAS NOT FOR NEW DESIGNS Package: Exposed Pad SOIC-8 Product Description Features  High Linearity Performance: +21dBm IS-95 Channel Power at -55dBc ACP; +20.7dBm WCDMA Channel

Contextual Info: DIE PRODUCTS BURR-BROWN* HI-508 DIE 1 E Single-Ended 8-Channel CMOS ANALOG MULTIPLEXER DIE FEATURES DESCRIPTION • ANALOG OVERVOLTAGE PROTECTION: 70Vp-p • NO CHANNEL INTERACTION DURING OVERVOLTAGE • ESD RESISTANT • BREAK-BEFORE-MAKE SWITCHING • ANALOG SIGNAL RANGE: ±15V

LOT CODE NE NEC

Contextual Info: TERM. NO.’s FOR rri REF. . 2 5 0 MAX. [6.35] ONLY . 3 4 5 MAX. [8.76] ^ 1 .240 MAX. [ 6 . 10 ] DOT L OCATES TERM. LOT #1 CODE & DATE CODE .305 [7.75] AREA REPRESENTS T E R M I N A L PAD DI MENSI ONS .030 6 030(6) [.76] [.76] PRI • .073(4) SEC 5, [1.85]

8MW1

Abstract: 8MW1 VDFN marking 1be HI-509 HI-509KD
Contextual Info: DDE PRODUCTS BURR-BROWN* [ HI-509 DIE 1 Differential 4-Channel C M O S ANALO G M ULTIPLEXER DIE FEATURES DESCRIPTION • A N A LO G O V ER VO LT AG E PROTECTION: 70Vp-p • NO C H A N N EL INTERACTION DURING O V ER VO LT AG E • E S D R ESIST A N T • BR EA K -B EF O R E-M A K E SW ITCHING

RX2056

Contextual Info: RX2056 916.5 MHz ASH Receiver Ideal for 916.5 MHz, 3 V Data Receivers in the USA and Canada Passive Design with No RF Oscillation Use with HX2000for 19.2 kbps Data Rate Simple to Apply with External Parts Count Rugged, Surface-Mount Package with 130 mm2 Footprint

zt3243

Abstract: zt3243lfey ZT3243LFEA zt3243l ZT3243F ZT3243FEA ZT3243LFET ZT3241LFEA ZT3243FEY ZT3243E
Contextual Info: ZT3243F Low Power +3V to +5.5V, 3D/5R 1000kbps RS232 Transceivers Zywyn Corporation ZT3241F/ZT3243F Zywyn ZT3241F/ZT3243F Low Power +3V to +5.5V, 3D/5R 1000kbps RS232 Transceivers Features General Description • Meets or Exceeds the EIA/TIA-232F and CCITT

zt3243leea

Abstract: zt3243 ZT3243LEEY zt3243l ZT3243E ZT3243F zt3243eea ZT3241LEEA Zywyn ZT3243LE
Contextual Info: ZT3243E Low Power +3V to +5.5V, 3D/5R 250kbps RS232 Transceivers Zywyn Corporation ZT3241E/ZT3243E Zywyn ZT3241E/ZT3243E Low Power +3V to +5.5V, 3D/5R 250kbps RS232 Transceivers Features General Description • Meets or Exceeds the EIA/TIA-232F and CCITT V.28/V.24 Specifications for VCC at +3.3V ±10%

HI-507

Abstract: HI-507KD
Contextual Info: DIE PRODUCTS B U R R -B R O W N * [ HI-507 DIE 1 Differential 8-Channel CMOS ANALOG MULTIPLEXER DIE FEATURES DESCRIPTION • ANALOG OVERVOLTAGE PROTECTION: 70Vp-p • NO CHANNEL INTERACTION DURING OVERVOLTAGE • ESD RESISTANT • BREAK-BEFORE-MAKE SWITCHING

hs82c54

Contextual Info: HS-82C85RH HARRIS S E M I C O N D U C T O R Radiation Hardened CMOS Static Clock Controller/Generator A ug ust 1995 Features Pinouts • Radiation Hardened - Total Dose > 10s RAD Si - Transient Upset > 108 RAD (Si)/s - Latch Up Free EPI-CMOS • Very Low Power Consumption

Contextual Info: RX4700 868.35 MHz ASH Receiver Ideal fo r 868.35 MHz, 3 V D ata Receivers in Europe High-Sensitivity Passive Design with No RF Oscillation Use with H X 4007for2.4 kbps D ata Rate Simple to Apply with External Parts Count Rugged, Surface-Mount Package with 130 mm2 Footprint

Contextual Info: RX1300 418.0 MHz ASH Receiver Ideal fo r 418.0 MHz, 3 V D ata Receivers in the UK and the USA High-Sensitivity Passive Design with No RF Oscillation Baseband D ata Rate o f2400 bis Simple to Apply with External Parts Count Rugged, Surface-Mount Package with 130 mm2 Footprint

HI-508

Abstract: HI-508KD ad 508 die
Contextual Info: DIE PRODUCTS B U R R -B R O W N * HI-508 DIE 1 [ Single-Ended 8-Channel CMOS ANALOG MULTIPLEXER DIE FEATURES DESCRIPTION • ANALOG OVERVOLTAGE PROTECTION: 70Vp-p The HI-508KD die is an 8-channel single-ended analog multiplexer with input overvoltage pro­

LOT CODE NE NEC

Abstract: nec 08e 2SC5434 NE680 NE680M03 S21E nec manufacture year bf179
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE680M03 OUTLINE DIMENSIONS Units in mm FEATURES • PACKAGE OUTLINE M03 NEW M03 PACKAGE: • Smallest transistor outline package available • Low profile/0.59 mm package height • Flat lead style for better RF performance

Contextual Info: 1SMB2EZ6.8~1SMB2EZ51 GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE 6.8 to 51 Volts POWER 2.0 Watts FEATURES • Low profile package • Built-in strain relief • Glass passivated iunction • Low inductance • Typical ID less than 1.0µA above 11V