LOOA Search Results

SL100B

Abstract: SL100 TRANSISTORS SL100A SL100 npn NPN SL100 BF107 SL100h N4030 N2222A sg103
Contextual Info: SILICON TRANSISTORS SEMICONDUCTORS Electrical Characteiistics At T j-2 5 'C Maximum Ratings TYPE NPN [PNP /2 N 3 7 0 1 /S N 4 0 3 0 /'SN 4031 /•'’2N4032 ^JN 4033 J3CY11S ''S K 1 0 0 •fS&lOOA ISKIOOB rSKlOOH 1J^K IO I '.SK 102 SL100 «* SL100A 3 SL100B

SL100B

Abstract: SL100A BF107 SL100 npn N2222A 2N4032 N4030 SK100B SK102 SL100
Contextual Info: SILICON TRANSISTORS SEMICONDUCTORS Electrical Characteiistics At T j-2 5 'C Maximum Ratings TYPE NPN [PNP /2 N 3 7 0 1 /S N 4 0 3 0 /'SN 4031 /•'’2N4032 ^JN 4033 J3CY11S ''S K 1 0 0 •fS&lOOA ISKIOOB rSKlOOH 1J^K IO I '.SK 102 SL100 «* SL100A 3 SL100B

Contextual Info: SANYO SEMICONDUCTOR CORP E2E a0ükñ23 □ 7TT707la D T-3H1 2SC3771 # N PN Epitaxial Planar Silicon Transistor 2018A U/V OSC, M IX, High-Frequency General-Purpose Amp Applications 1944B Applications . UHF/VHF frequency converters, looal oscillators, HF amplifiers

mu 86

Abstract: TF223 DK10 DK25 DK24 TF225 TF444 DK11 DK13 DK27
Contextual Info: fast switching thyristor > 1OOArms selector guide guide de sélection thyristors rapides > lOOAeff showing voltage-tq trade-off limits avec limite en tension pour tq 197

TC03C100A

Abstract: TC03C200A TC03C030A
Contextual Info: SU RF ACE n O U N T A B L E ELEK b2E D • lOOaDSt. Q D 0 D 03 3 Slfl ■ CHIP TYPE CERAMIC TRIMMER CAPACITORS TC03 SERIES ■ • • • • Application Compact Radio V C R Camera TV Set, V CR Handy type radio communication equipment ■ 1. 2. 3. 4. 5. Features

N2222

Abstract: SL100B pnp SL100 SK100B SL100 npn NPN pnp MATCHED PAIRS 2n2905A 2N2219A BC188B SL100A N2222A NPN SL100
Contextual Info: SILICON TRANSISTORS SEMICONDUCTORS Electrical Characteiistics At T j-2 5 'C Maximum Ratings TYPE NPN [PNP /2 N 3 7 0 1 /S N 4 0 3 0 /'SN 4031 /•'’2N4032 ^JN 4033 J3CY11S ''S K 1 0 0 •fS&lOOA ISKIOOB rSKlOOH 1J^K IO I '.SK 102 SL100 «* SL100A 3 SL100B

Contextual Info: TT 9097250 TOSHIBA D T | T D ci7aSD 001751b L> <DISCRETE/OPTO 99D 17216 D"T-M)-33 TLG320, TLG32 I G R E E N C O LO R 2 D IG IT S L E D D IS P L A Y . Green Color, lOoa Character Height 2 Digit Kuaerieal Display. . Available Both Polarity of Connections, Cotnoon Cathode or Coenon Anode.

TF915

Abstract: 800 300 tf91320 10MSA
Contextual Info: o fast switching thyristors > 1OOArms thyristors rapides > lOOAeff TtlOMSON'CSF Tamb = * ° C Types •o V r r M ■tsiwi* 10 ms VDRM V (A) (A) 700 Arm s / Tease = 80°C Tj = 125°C TF 666 TF 666 TF 666 TF 666 TF 666 TF 666 TF 666 TF 666 01 02 04 06 08 10

Contextual Info: m iN EREX QIC0610001 Dual Common Emitter IGBT Module 100A 600V Per Switch Powerex Inc., 200 Hillis St., Youngwood 15697 724 925-7272 Description: Powerex Dual Common Emitter IGBT Power Module features two common emitter IGBT’s. Features: Two switches - each capable of lOOAmps

oop1

Contextual Info: Z0£6£0PS 'ON eNIMVMa £#fflia NOTE ± 0 . 05 1 NOTE P.C.B. THROUGH 2 — 0 2 . 2 2 NOTE HOLE 4 POLARIZING MARK ± 0 .0 5 1 0 0 -< Ä 0 . 8 LOOAT I ON ( RE F. ) - - O — <* yv P O L A R I Z I N G m LD o a • 0o -H • KEY ± 0. 1 5 2 . 2 3 _

DK 04

Abstract: BZ-300
Contextual Info: fast switching thyristors > l OOArms thyristors rapides > lOOAeff THOMSON-CSF Ta m b - 25 °C Types VRRM >0 •t s m * 10 ms V DRM A 260 Arms / DK 2401 DK 2402 DK 2404 DK 2406 DK 2408 DK 2410 DK 2412 DK 2414 DK 2416 DK 2418 DK 2420 = DK 2501 DK 2502 DK 2504

Contextual Info: TOSHIBA TENTATIVE GT30J301 TO SH IBA INSULATED GATE BIPO LAR TRANSISTOR SILICON N CHANNEL IGBT GT30J301 HIGH P O W E R SWITCHING APPLICATIONS Unit in mm M OTOR CONTROL APPLICATIONS $3.2 ± 0.2 The 3rd Generation Enhancement-Mode High Speed : t f= 0.30/^s Max.

ufn440

Abstract: UFN441
Contextual Info: POWER MOSFET TRANSISTORS UFN440 UFN441 UFN442 UFN443 500 Volt, 0.85 Ohm N-Channel FEA TU RES D ESCRIPTIO N • • • • • The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low R dscow and a high transconductance.

UFN432

Abstract: mosfet UFN432 UFN 432 UFN431 UFN433
Contextual Info: POWER MOSFET TRANSISTORS 500 Volt, 1.5 Ohm N-Channel UFN430 UFN431 UFN432 UFN433 FEATURES DESCRIPTION • • • • • The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rosiom and a high transconductance.

2N6797

Contextual Info: POWER MOSFET TRANSISTORS JTX JTXV 200 Volt, 0.4 Ohm N-Channel DESCRIPTION The U nitrode power M O SFET design u tilizes the m ost advanced technology available. This efficien t design ach ieves a very low Rosiom and a high transconductance. FEATURES • Fast Sw itching

MPSA63

Abstract: MPSA63 equivalent 100C100B mps-a63 C10AA MPSA62 mpsa64
Contextual Info: TOSHIBA TRANSISTOR MPSA62, 63, 64 SILICON PNP EPITAXIAL TYPE PCT PROCESS DESIGNED FOR PRE-AMPLIFIER INPUT APPLICATIONS REQUIRING HIGH INPUT IMPEDANCE. FEATURES : • High DC Current Gain I I C-10«A : hFE- 5000(Min.) MPSA63 10000(Min.) MPSA64 20000(Min.) MPSA62

TLR4163

Abstract: 2CK75 TLR42 TLR22 TLB216 TLR4213
Contextual Info: ^ TOSHIBA { D I S C R E T E/OPTO} 9097250 TOSHIBA DISCRETE/OPTO> DE I TDTYSSD ;DD175b4 99D 17264 DT-M/-33 TLR22 I8, TLR42 I3, TLR2 I68, TLR4 I63 RED C O LO R 4 D IG IT S LED D IS P L A Y • Clock display for autiplex drive operation and available both polarity connon

TC514100

Abstract: 514100A
Contextual Info: 4,194,304 WORD X 1 BIT DYNAMIC RAM DESCRIPTION THE TC514100A is the new generation dynamic RAM organized 4,194,304 word by 1 bit. The TC514410ASJ/AZ/AFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit

UFNZ40

Contextual Info: UFNZ40 UFNZ42 POWER MOSFET TRANSISTORS 50 Volt, 0.028 Ohm N-Channel FEATURES DESCRIPTION • • • • C o m p a c t Plastic Package Fast S w itc h in g L o w D rive C urrent Ease o f Paralleling These lo w v o lta g e p o w e r M O S FETS have been designed fo r o p tim u m p e rfo rm a n c e in lo w

Contextual Info: Tem ic SÌ6925DQ S e m i c o n d u c t o r s Dual N-Channel 2.5-V G-S Rated MOSFET Product Summary V d s (V) Id (A) r DS(on) ( ß ) 20 0.05 @ VGS = 4.5 V ± 3 .4 0.06 @ VGS = 3.0 V ± 3.1 0.08 @ VGS = 2.5 V ± 2 .7 is * * " * d 2 o TSSOP-8 Top View N-Channel M OSFET

Contextual Info: T e m ic Dual N-Channel Enhancement-Mode MOSFET Product Summary n S o n ) (Q ) I d (A ) 0.05 @ V GS = 10 V ± 5 .3 0.07 @ V q s = 4.5 V ± 4 .5 V d s (V ) 50 SO -16* D 1D ] D I Gi o Jf tu G2 o —

332AL

Contextual Info: Tem ic SÌ4466DY S e m i c o n d u c t o r s N-Channel 2.5-V G-S Rated MOSFET Product Summary V D S (V ) 20 r DS(on) ( S ) I d (A ) 0.009 @ Vo s = 4.5 V ± 1 3 .2 0.013 @ V GS = 2.5 V ± 11 D O SO-8 s [ T ~8~| D s (jT ~7~1 D s [ T ~6~| D G [ T ~5~| D I It

Contextual Info: SÌ9804DY Vishay Siliconix N-Ch Reduced Qg, Fast Switching MOSFET cH Vo s V Rds(ON) (f ì ) Id (A) 0.023 @ V q s = 4.5 V ±7.8 0.030 V GS = 3.0 V ±6.8 25 D Q SO-8 Ô S N-Channel M O SFET SYM B O L P A R A M ETER LIMIT Drain-Source Voltage Vos 25 Gate-Source Voltage

Contextual Info: Tem ic SÌ6968DQ Semicondutinrs Dual N-Ch. 2.5-V G-S Rated MOSFET Common Drain Product Summary V d s (V) 20 I d (A) ±6.5 ±5.5 rDS(on) (Ö ) 0.022 @ VGS = 4.5 V 0.030 @ VGS = 2.5 V us* TSSOP-8 3- O-Top View it Ô Si Ô S2 N-Channel MOSFET N-Channel MOSFET