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    LOGIC LEVEL P-CHANNEL POWER MOSFET Search Results

    LOGIC LEVEL P-CHANNEL POWER MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    PQU650-12P Murata Manufacturing Co Ltd AC/DC 650W, 6”X4” U-CHANNEL, 12V O/P Visit Murata Manufacturing Co Ltd
    MGN1S1208MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-8V GAN Visit Murata Manufacturing Co Ltd
    MGN1D120603MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-6/-3V GAN Visit Murata Manufacturing Co Ltd
    MGN1S1212MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-12V GAN Visit Murata Manufacturing Co Ltd
    MGN1S0508MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 5-8V GAN Visit Murata Manufacturing Co Ltd

    LOGIC LEVEL P-CHANNEL POWER MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    FDC658AP

    Abstract: Single P-Channel, Logic Level, PowerTrench MOSFET marking I58 marking 58A
    Text: FDC658AP Single P-Channel Logic Level PowerTrench MOSFET -30V, -4A, 50m: General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild's advanced PowerTrench process. It has been optimized for battery power management applications.


    Original     		FDC658AP FDC658AP Single P-Channel, Logic Level, PowerTrench MOSFET marking I58 marking 58A PDF

    Untitled

    Abstract: No abstract text available
    Text: February 2007 FDN340P  Single P-Channel, Logic Level, PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor advanced Power Trench process that has been especially tailored to minimize


    Original     		FDN340P PDF

    marking 58A

    Abstract: FDC658AP Single P-Channel, Logic Level, PowerTrench MOSFET 30V P-Channel Logic Level PowerTrench MOSFET
    Text: FDC658AP Single P-Channel Logic Level PowerTrench MOSFET -30V, -4A, 50mΩ General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild's advanced PowerTrench process. It has been optimized for battery power management applications.


    Original     		FDC658AP marking 58A FDC658AP Single P-Channel, Logic Level, PowerTrench MOSFET 30V P-Channel Logic Level PowerTrench MOSFET PDF

    Untitled

    Abstract: No abstract text available
    Text: Si3455DV Single P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild’s advanced PowerTrench process. It has been optimized for battery power management applications. • –3.6 A, –30 V.


    Original     		Si3455DV PDF

    marking 654

    Abstract: No abstract text available
    Text: FDC654P Single P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild’s advanced PowerTrench process. It has been optimized for battery power management applications. • –3.6 A, –30 V.


    Original     		FDC654P FDC654P marking 654 PDF

    si3457dv

    Abstract: Single P-Channel, Logic Level, PowerTrench MOSFET
    Text: Si3457DV Single P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild’s advanced PowerTrench process. It has been optimized for battery power management applications. • –4 A, –30 V.


    Original     		Si3457DV Single P-Channel, Logic Level, PowerTrench MOSFET PDF

    Si3455DV

    Abstract: No abstract text available
    Text: Si3455DV Single P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild’s advanced PowerTrench process. It has been optimized for battery power management applications. • –3.6 A, –30 V.


    Original     		Si3455DV PDF

    FDC654P

    Abstract: No abstract text available
    Text: FDC654P Single P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild’s advanced PowerTrench process. It has been optimized for battery power management applications. • –3.6 A, –30 V.


    Original     		FDC654P FDC654P PDF

    si3457dv

    Abstract: No abstract text available
    Text: Si3457DV Single P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild’s advanced PowerTrench process. It has been optimized for battery power management applications. • –4 A, –30 V.


    Original     		Si3457DV PDF

    marking A36A

    Abstract: No abstract text available
    Text: FDC654P Single P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild’s advanced PowerTrench process. It has been optimized for battery power management applications. • –3.6 A, –30 V.


    Original     		FDC654P marking A36A PDF

    Untitled

    Abstract: No abstract text available
    Text: Si3457DV Single P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild’s advanced PowerTrench process. It has been optimized for battery power management applications. • –4 A, –30 V.


    Original     		Si3457DV PDF

    Untitled

    Abstract: No abstract text available
    Text: Si3457DV Single P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild’s advanced PowerTrench process. It has been optimized for battery power management applications. • –4 A, –30 V.


    Original     		Si3457DV PDF

    p-channel 7121

    Abstract: Supersot 6 Si3455DV SI3455DV MARKING
    Text: Si3455DV Single P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild’s advanced PowerTrench process. It has been optimized for battery power management applications. • –3.6 A, –30 V.


    Original     		Si3455DV p-channel 7121 Supersot 6 SI3455DV MARKING PDF

    FDN358P

    Abstract: FDN358
    Text: FDN358P Single P-Channel, Logic Level, PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate


    Original     		FDN358P OT-23 FDN358P FDN358 PDF

    FDN340P application note

    Abstract: FDN340P
    Text: FDN340P Single P-Channel, Logic Level, PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate


    Original     		FDN340P OT-23 FDN340P application note FDN340P PDF

    FDN358

    Abstract: FDN358P
    Text: FDN358P Single P-Channel, Logic Level, PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate


    Original     		FDN358P OT-23 FDN358 FDN358P PDF

    CBVK741B019

    Abstract: F63TNR FDN340P MMSZ5221B
    Text: FDN340P Single P-Channel, Logic Level, PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate


    Original     		FDN340P OT-23 CBVK741B019 F63TNR FDN340P MMSZ5221B PDF

    FDN340P

    Abstract: FDN340P application note
    Text: FDN340P Single P-Channel, Logic Level, PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate


    Original     		FDN340P FDN340P FDN340P application note PDF

    MARKING 358

    Abstract: No abstract text available
    Text: FDN358P Single P-Channel, Logic Level, PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate


    Original     		FDN358P OT-23 MARKING 358 PDF

    FDC654P

    Abstract: No abstract text available
    Text: FDC654P Single P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild’s advanced PowerTrench process. It has been optimized for battery power management applications. • –3.6 A, –30 V. RDS ON = 75 mΩ @ V GS = –10 V


    Original     		FDC654P FDC654P PDF

    IRHLUB770Z

    Abstract: IRHLUB7930Z4
    Text: PD-94764E RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT UB IRHLUB7970Z4 60V, P-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHLUB7970Z4 100K Rads (Si) 1.3Ω -0.53A IRHLUB7930Z4 300K Rads (Si) 1.3Ω -0.53A International Rectifier’s R7TM Logic Level Power


    Original     		PD-94764E IRHLUB7970Z4 IRHLUB7970Z4 IRHLUB7930Z4 MIL-PRF-19500/255L IRHLUB770Z PDF

    Untitled

    Abstract: No abstract text available
    Text: RFG50N05L, RFP50N05L Semiconductor A p ril 1999 D ata S h eet 50A, 50V, 0.027 Ohm, Logic Level, N-Channel Power MOSFETs These are logic-level N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI


    OCR Scan     		RFG50N05L, RFP50N05L AN7254 AN7260. PDF

    Untitled

    Abstract: No abstract text available
    Text: RFD16N05L, RFD16N05LSM S em iconductor A p ril 1999 D ata S h eet 16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs These are N-Channel logic level power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI


    OCR Scan     		RFD16N05L, RFD16N05LSM 46E-5) 38E-3 66E-3 614E-3 13E-9 14E-8) PDF

    field-effect transistors

    Abstract: 05LSM RFP8N18L RFP25N06L transistors 2N6904 field-effect transistor RFP14N05L M 615 transistor transistor 684
    Text: _ POWER MOSFETs 6 L O G IC L E V E L P O W E R M O S F E T s PAGE 2N6901 N-Channel Logic Level Power MOS Field-Effect Transistor L2F E T . 6-3 2N6902 N-Channel Logic Level Power MOS Field-Effect Transistor (L2F E T ) .


    OCR Scan     		2N6901 2N6902 2N6903 2N6904 RFL1N08L, RFL1N10L RFL1N12L, RFL1N15L RFL1N18L, RFL1N20L field-effect transistors 05LSM RFP8N18L RFP25N06L transistors field-effect transistor RFP14N05L M 615 transistor transistor 684 PDF