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    LOGIC LEVEL N-CHANNEL POWER MOSFET Search Results

    LOGIC LEVEL N-CHANNEL POWER MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    LOGIC LEVEL N-CHANNEL POWER MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N6901

    Abstract: No abstract text available
    Text: N-CHANNEL LOGIC LEVEL POWER MOSFET 2N6901 • N-Channel Logic Level • Logic Level Power MOSFET Transistor In A Hermetic TO-39 Metal Package • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VDS VGS VDG ID ID IDM


    Original     		PDF 2N6901 O-205AF) 2N6901

    3055L transistor

    Abstract: Mosfet Sot223
    Text: [ /Title RFT30 55LE /Subject (2.0A, 60V, 0.150 Ohm, N-Channel, Logic Level, ESD Rated, Power MOSFET) /Author () /Keywords (Harris Sem,ico nductor, N-Channel, Logic Level, ESD Rated, Power MOSFET, SOT223) /Creator () /DOCIN RFT3055LE Semiconductor 2.0A, 60V, 0.150 Ohm, N-Channel,


    Original     		PDF RFT3055LE TA49158. RFT3055LE OT-223 330mm EIA-481 3055L transistor Mosfet Sot223

    AN7254

    Abstract: AN7260 RFL1N12L RFL1N15L
    Text: [ /Title RFL1N 12L, RFL1N1 5L /Subject (1A, 120V and 150V, 1.900 Ohm, Logic Level, N-Channel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, Logic Level, N-Channel Power MOSFETs, TO205AF) RFL1N12L, RFL1N15L Semiconductor 1A, 120V and 150V, 1.900 Ohm,


    Original     		PDF O205AF) RFL1N12L, RFL1N15L RFL1N12L O-205AF AN7254 AN7260. AN7260 RFL1N12L RFL1N15L

    HUF76107P3

    Abstract: AN7260 AN7254 AN9321 AN9322 TB334 TC298
    Text: HUF76107P3 Data Sheet December 2001 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Features • Logic Level Gate Drive These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology


    Original     		PDF HUF76107P3 HUF76107P3 AN7260 AN7254 AN9321 AN9322 TB334 TC298

    HUF76107P3

    Abstract: AN7254 AN7260 AN9321 AN9322 TB334 TC298
    Text: HUF76107P3 Data Sheet January 2003 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Features • Logic Level Gate Drive These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology


    Original     		PDF HUF76107P3 HUF76107P3 AN7254 AN7260 AN9321 AN9322 TB334 TC298

    TC298

    Abstract: No abstract text available
    Text: HUF76107P3 Data Sheet October 1999 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Ordering Information PART NUMBER HUF76107P3 PACKAGE TO-220AB 4382.5 Features • Logic Level Gate Drive These N-Channel power MOSFETs are manufactured using


    Original     		PDF HUF76107P3 TC298

    AN7254

    Abstract: AN9321 AN9322 HUF76105SK8 HUF76105SK8T MS-012AA TB334
    Text: HUF76105SK8 Data Sheet December 2001 5.5A, 30V, 0.050 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the


    Original     		PDF HUF76105SK8 AN7254 AN9321 AN9322 HUF76105SK8 HUF76105SK8T MS-012AA TB334

    Untitled

    Abstract: No abstract text available
    Text: HUF76113T3ST Data Sheet June 2000 4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET File Number 4388.3 Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced


    Original     		PDF HUF76113T3ST

    AN7254

    Abstract: AN9321 AN9322 HUF76132SK8 HUF76132SK8T MS-012AA TB334
    Text: HUF76132SK8 Data Sheet January 2003 11.5A, 30V, 0.0115 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the


    Original     		PDF HUF76132SK8 AN7254 AN9321 AN9322 HUF76132SK8 HUF76132SK8T MS-012AA TB334

    AN9321

    Abstract: AN9322 HUF76113SK8 HUF76113SK8T MS-012AA TB334 TB337
    Text: HUF76113SK8 Data Sheet January 2003 6.5A, 30V, 0.030 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the


    Original     		PDF HUF76113SK8 AN9321 AN9322 HUF76113SK8 HUF76113SK8T MS-012AA TB334 TB337

    n13 sot 23

    Abstract: 44E10 AN7254 AN7260 AN9321 AN9322 HUF76113T3ST TB334
    Text: HUF76113T3ST TM Data Sheet June 2000 4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET File Number 4388.3 Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced


    Original     		PDF HUF76113T3ST OT-223 330mm 100mm EIA-481 n13 sot 23 44E10 AN7254 AN7260 AN9321 AN9322 HUF76113T3ST TB334

    Untitled

    Abstract: No abstract text available
    Text: HUF76105DK8 Data Sheet October 1999 5A, 30V, 0.050 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET File Number 4380.5 Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced


    Original     		PDF HUF76105DK8

    intersil 76131SK8

    Abstract: AN9321 HUF76131SK8 HUF76131SK8T MS-012AA TB334
    Text: HUF76131SK8 TM Data Sheet June 2000 10A, 30V, 0.013 Ohm, N-Channel, Logic Level UltraFET Power MOSFET File Number 4396.5 Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced


    Original     		PDF HUF76131SK8 mana15mm) MS-012AA 330mm EIA-481 intersil 76131SK8 AN9321 HUF76131SK8 HUF76131SK8T MS-012AA TB334

    Untitled

    Abstract: No abstract text available
    Text: HUF76121SK8 Data Sheet January 2003 8A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the


    Original     		PDF HUF76121SK8

    AN7254

    Abstract: AN9321 AN9322 HUF76105SK8 HUF76105SK8T MS-012AA TB334
    Text: HUF76105SK8 Data Sheet January 2003 5.5A, 30V, 0.050 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the


    Original     		PDF HUF76105SK8 AN7254 AN9321 AN9322 HUF76105SK8 HUF76105SK8T MS-012AA TB334

    76113

    Abstract: AN7254 AN7260 AN9321 AN9322 HUF76113T3ST TB334
    Text: HUF76113T3ST Data Sheet June 2003 4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the


    Original     		PDF HUF76113T3ST 76113 AN7254 AN7260 AN9321 AN9322 HUF76113T3ST TB334

    TA7613

    Abstract: AN9321 AN9322 HUF76131SK8 HUF76131SK8T MS-012AA TB334
    Text: HUF76131SK8 Data Sheet December 2001 10A, 30V, 0.013 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the


    Original     		PDF HUF76131SK8 TA7613 AN9321 AN9322 HUF76131SK8 HUF76131SK8T MS-012AA TB334

    AN7254

    Abstract: AN9321 AN9322 HUF76132SK8 HUF76132SK8T MS-012AA TB334
    Text: HUF76132SK8 Data Sheet December 2001 11.5A, 30V, 0.0115 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the


    Original     		PDF HUF76132SK8 AN7254 AN9321 AN9322 HUF76132SK8 HUF76132SK8T MS-012AA TB334

    Untitled

    Abstract: No abstract text available
    Text: HUF76113T3ST Data Sheet January 2003 4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the


    Original     		PDF HUF76113T3ST

    F10N12L

    Abstract: F10N15L 10N15L F10N12 RFP10N15L F10N15 RFP10N12L 10n15 RFM10N12L RFM10N15L
    Text: Logic-Level Power MOSFETs_ RFM10N12L, RFM10N15L, RFP10N12L, RFP10N15L File N u m be r 1559 Power Logic Level MOSFETs N-Channel Logic Level Power Field-Effect Transistors L2 FET TERMINAL DIAGRAM 10 A, 120 V — 150 V rDsioni: 0.3 f)


    OCR Scan     		PDF RFM10N12L, RFM10N15L, RFP10N12L, RFP10N15L 92CS-3374I RFM10N12L RFM10N15L RFP10N12L RFP10N15L* F10N12L F10N15L 10N15L F10N12 RFP10N15L F10N15 10n15

    F15N05L

    Abstract: F15N06L f15n05 RFP15N05L f15n RFM15N05L RFP15N06L RFM15N06L rca application notes RCA bipolar transistors
    Text: Logic-Level Power MOSFETs File N u m be r 1558 RFM15N05L, RFM15N06L, RFP15N05L, RFP15N06L Power Logic Level MOSFETs N-Channel Logic Level Power Field-Effect Transistors L2 FET t e r m in a l d ia g r a m


    OCR Scan     		PDF RFM15N05L, RFM15N06L, RFP15N05L, RFP15N06L RFM15N05L RFM15N06L RFP15N05L RFP15N06L* 92CS-38IS0 F15N05L F15N06L f15n05 f15n RFP15N06L rca application notes RCA bipolar transistors

    F10N15L

    Abstract: F10N12L RCA SOLID STATE F10N12L F10N12 RFM10N15L F10N15 RFP10N15L RFM10N12L RFP10N12L TA9530
    Text: 387 5081 G E SOLID STATE 01 DE | 3A75Dfil Q01fll4M4 1 1 T'37 Logic-Level Power MOSFETs _ :_ RFM10N12L, RFM10N15L, RFP10N12L, RFP10N15L F ile N u m b e r 1559 Power Logic Level MOSFETs N-Channel Logic Level


    OCR Scan     		PDF 3fl75Dfil RFM10N12L, RFM10N15L, RFP10N12L, RFP10N15L RFM10N12L RFM10N15L RFP10N12L RFP10N15L* F10N15L F10N12L RCA SOLID STATE F10N12L F10N12 F10N15 TA9530

    Untitled

    Abstract: No abstract text available
    Text: HUF76107P3 Semiconductor Data Sheet February 1999 20A, 30 V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Features Logic Level Gate Drive These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology


    OCR Scan     		PDF HUF76107P3 30e-3, 1e-12 1e-10 96e-6 1e6/50)

    Saber

    Abstract: TB334 relay spice model mosfet 407 76113 Power MOSFET SOT-223 Power logic MOSFET SOT-223 power relay N-channel mosfet Logic Level N-Channel Power MOSFET HUF76113T3ST
    Text: HUF76113T3ST interrii June 1999 4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features Logic Level Gate Drive # This N-Channel power MOSFET is manufactured using the innovative &WMW W UltraFET process. This advanced * process technology achieves the


    OCR Scan     		PDF HUF76113T3ST TB334, OT-223 Saber TB334 relay spice model mosfet 407 76113 Power MOSFET SOT-223 Power logic MOSFET SOT-223 power relay N-channel mosfet Logic Level N-Channel Power MOSFET HUF76113T3ST