2N6901
Abstract: No abstract text available
Text: N-CHANNEL LOGIC LEVEL POWER MOSFET 2N6901 • N-Channel Logic Level • Logic Level Power MOSFET Transistor In A Hermetic TO-39 Metal Package • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VDS VGS VDG ID ID IDM
|
Original
|
2N6901
O-205AF)
2N6901
|
PDF
|
3055L transistor
Abstract: Mosfet Sot223
Text: [ /Title RFT30 55LE /Subject (2.0A, 60V, 0.150 Ohm, N-Channel, Logic Level, ESD Rated, Power MOSFET) /Author () /Keywords (Harris Sem,ico nductor, N-Channel, Logic Level, ESD Rated, Power MOSFET, SOT223) /Creator () /DOCIN RFT3055LE Semiconductor 2.0A, 60V, 0.150 Ohm, N-Channel,
|
Original
|
RFT3055LE
TA49158.
RFT3055LE
OT-223
330mm
EIA-481
3055L transistor
Mosfet Sot223
|
PDF
|
6680a
Abstract: F011 F63TNR F852 FDS6680A L86Z SOIC-16
Text: October 2001 FDS6680A Single N-Channel, Logic Level, PowerTrench MOSFET GeneralDescription Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize
|
Original
|
FDS6680A
OT-23
6680a
F011
F63TNR
F852
FDS6680A
L86Z
SOIC-16
|
PDF
|
6680a
Abstract: FDS6680A SOIC-16
Text: October 2001 FDS6680A Single N-Channel, Logic Level, PowerTrench MOSFET GeneralDescription Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize
|
Original
|
FDS6680A
OT-23
6680a
FDS6680A
SOIC-16
|
PDF
|
Si4822DY
Abstract: SOIC-16
Text: January 2001 Si4822DY Single N-Channel, Logic Level, PowerTrench MOSFET GeneralDescription Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize
|
Original
|
Si4822DY
OT-23
SOIC-16
|
PDF
|
Untitled
Abstract: No abstract text available
Text: January 2001 Si4822DY Single N-Channel, Logic Level, PowerTrench MOSFET GeneralDescription Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize
|
Original
|
Si4822DY
OT-23
|
PDF
|
Si4874DY
Abstract: SOIC-16
Text: January 2001 Si4874DY Single N-Channel, Logic Level, PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize
|
Original
|
Si4874DY
SOIC-16
|
PDF
|
Untitled
Abstract: No abstract text available
Text: January 2001 Si4874DY Single N-Channel, Logic Level, PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize
|
Original
|
Si4874DY
OT-23
|
PDF
|
Untitled
Abstract: No abstract text available
Text: tm FDS6898AZ_F085 Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored
|
Original
|
FDS6898AZ
|
PDF
|
FDS6898AZ-F085
Abstract: FDS6898AZ
Text: FDS6898AZ_F085 tm Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored
|
Original
|
FDS6898AZ
FDS6898AZ-F085
|
PDF
|
FDC655AN
Abstract: SOIC-16
Text: June 1998 FDC655AN Single N-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state
|
Original
|
FDC655AN
OT-23
SOIC-16
OT-223
FDC655AN
SOIC-16
|
PDF
|
F10N15L
Abstract: F10N12L RCA SOLID STATE F10N12L F10N12 RFM10N15L F10N15 RFP10N15L RFM10N12L RFP10N12L TA9530
Text: 387 5081 G E SOLID STATE 01 DE | 3A75Dfil Q01fll4M4 1 1 T'37 Logic-Level Power MOSFETs _ :_ RFM10N12L, RFM10N15L, RFP10N12L, RFP10N15L F ile N u m b e r 1559 Power Logic Level MOSFETs N-Channel Logic Level
|
OCR Scan
|
3fl75Dfil
RFM10N12L,
RFM10N15L,
RFP10N12L,
RFP10N15L
RFM10N12L
RFM10N15L
RFP10N12L
RFP10N15L*
F10N15L
F10N12L
RCA SOLID STATE F10N12L
F10N12
F10N15
TA9530
|
PDF
|
FDC655AN
Abstract: SOIC-16
Text: June 1998 FDC655AN Single N-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state
|
Original
|
FDC655AN
OT-23
SOIC-16
OT-223
FDC655AN
SOIC-16
|
PDF
|
F10N12L
Abstract: F10N15L 10N15L F10N12 RFP10N15L F10N15 RFP10N12L 10n15 RFM10N12L RFM10N15L
Text: Logic-Level Power MOSFETs_ RFM10N12L, RFM10N15L, RFP10N12L, RFP10N15L File N u m be r 1559 Power Logic Level MOSFETs N-Channel Logic Level Power Field-Effect Transistors L2 FET TERMINAL DIAGRAM 10 A, 120 V — 150 V rDsioni: 0.3 f)
|
OCR Scan
|
RFM10N12L,
RFM10N15L,
RFP10N12L,
RFP10N15L
92CS-3374I
RFM10N12L
RFM10N15L
RFP10N12L
RFP10N15L*
F10N12L
F10N15L
10N15L
F10N12
RFP10N15L
F10N15
10n15
|
PDF
|
|
F011
Abstract: F63TNR F852 FDS6690A L86Z SOIC-16
Text: April 1999 FDS6690A Single N-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state
|
Original
|
FDS6690A
OT-23
F011
F63TNR
F852
FDS6690A
L86Z
SOIC-16
|
PDF
|
6912A Datasheet
Abstract: 6912A FDS6912A SOIC-16
Text: June 1998 FDS6912A Dual N-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state
|
Original
|
FDS6912A
OT-23
FDS6912A
6912A Datasheet
6912A
SOIC-16
|
PDF
|
6912A Datasheet
Abstract: FDS6912A SOIC-16
Text: June 1998 FDS6912A Dual N-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state
|
Original
|
FDS6912A
OT-23
6912A Datasheet
FDS6912A
SOIC-16
|
PDF
|
FDB6035AL
Abstract: FDP6035AL
Text: July 1998 FDP6035AL/FDB6035AL N-Channel Logic Level PowerTrenchTM MOSFET General Description Features This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional
|
Original
|
FDP6035AL/FDB6035AL
FDB6035AL
FDP6035AL
|
PDF
|
Untitled
Abstract: No abstract text available
Text: April 1999 FDS6961A Dual N-Channel Logic Level PowerTrenchTM MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state
|
Original
|
FDS6961A
OT-23
|
PDF
|
6930A
Abstract: FDS6930A SOIC-16
Text: October 1998 FDS6930A Dual N-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state
|
Original
|
FDS6930A
OT-23
SOIC-16
OT-223
6930A
FDS6930A
SOIC-16
|
PDF
|
a9hv
Abstract: MTD3055VL
Text: MTD3055VL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional
|
Original
|
MTD3055VL
a9hv
MTD3055VL
|
PDF
|
J1 TRANSISTOR DIODE SOT-23 PACKAGE
Abstract: SOT 23 MOSFET MARKING B9 sot-23 BSS138LT1 SOT-23 MOSFET
Text: MOTOROLA Order this document by BSS138LT1/D SEMICONDUCTOR TECHNICAL DATA { ? » ] . l i n e Green W BSS138LT1 Motorola Preferred Device Unreleased Data Sheet N-Channel Enhancement Mode Logic Level SOT-23 MOSFET N-CHANNEL LOGIC LEVEL TMOS FET
|
OCR Scan
|
BSS138LT1/D
BSS138LT1
OT-23
J1 TRANSISTOR DIODE SOT-23 PACKAGE
SOT 23 MOSFET
MARKING B9 sot-23
BSS138LT1
SOT-23 MOSFET
|
PDF
|
FDB6035AL
Abstract: FDP6035AL 24A 60V LOGIC N-Channel MOSFET
Text: July 1998 FDP6035AL/FDB6035AL N-Channel Logic Level PowerTrenchTM MOSFET General Description Features This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional
|
Original
|
FDP6035AL/FDB6035AL
FDP6035AL
FDB6035AL
24A 60V LOGIC N-Channel MOSFET
|
PDF
|
6961A
Abstract: FDS6961A SOIC-16
Text: April 1999 FDS6961A Dual N-Channel Logic Level PowerTrenchTM MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state
|
Original
|
FDS6961A
OT-23
6961A
FDS6961A
SOIC-16
|
PDF
|