Untitled
Abstract: No abstract text available
Text: KIS-11 Nobel Weighing Systems Weigh Module FEATURES • Capacity: 50kN 11.2Klb • Simple Installation • Moveable load point • Withstands very high lateral forces • Extremely accurate and rugged • ATEX and OIML approval DESCRIPTION APPLICATIONS The KIS-11 load cell has several features
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KIS-11
KIS-11
27-Apr-2011
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load cell kis- 1-50 KN
Abstract: m8 bolt shear strength BLH load cell Vishay kis-3 specification load cell kis- 3 load cell kis-2 load cell kis-3 BLH KIS-1 BLH load cell kis kis 1-50 kN
Text: Model KIS Vishay BLH Transducers Load Cell Weigh Modules FEATURES • Capacity range: 110 to 45000 lb 0.5 to 200 kN • Checkless design - no stay or check rods required • Designed to meet ANSI/UBC wind and seismic load requirements • Insensitive to side loads of up to 100% capacity
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08-Apr-05
load cell kis- 1-50 KN
m8 bolt shear strength
BLH load cell
Vishay kis-3 specification
load cell kis- 3
load cell kis-2
load cell kis-3
BLH KIS-1
BLH load cell kis
kis 1-50 kN
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BLH load cell
Abstract: Vishay nobel BLH load cell kis nobel SE-691 BLH sr-4 celtron TEDEA BLH transducer load cell to measure load and torque
Text: z F z x KIS transducers are of the shear-beam type. They measure the strains that arise from the shear forces caused by a load. x y M F, x M (F, x) σx(z) T (F) T (F) τ (a) (z) xz WHY KIS’S FEATURES ARE UNBEATABLE (b) Distribution of bending moment M, shear force T, normal
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VTR-PL0316-0402
BLH load cell
Vishay nobel
BLH load cell kis
nobel
SE-691
BLH sr-4
celtron
TEDEA
BLH transducer
load cell to measure load and torque
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Untitled
Abstract: No abstract text available
Text: KISD-6 Nobel Weighing Systems Load Cell FEATURES • Capacity range: 50, 100, 200, 400, and 1000kN 11.2K, 22.5K, 45K, 90K, and 225K lb • Cylindrical shape for easy installation • High accuracy • ATEX approved for hazardous areas • High overload capacity
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1000kN
17-Mar-10
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load cell kis- 1 KN
Abstract: No abstract text available
Text: KIS-9 Nobel Weighing Systems Weigh Module FEATURES • Capacity range: 5, 10, 20, 50, and 100 kN 1.12K, 2.25K, 4.5K, 11.2K, and 22.5K lb • Simple installation • Moveable load point • Withstands very high lateral forces • Extremely accurate and rugged
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19-Mar-10
load cell kis- 1 KN
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Vishay nobel
Abstract: KISD-6 Vishay nobel kisd load cell kis- 1-50 KN KISD load cell load cell kis- 1 KN load cell kis- 3
Text: Model KISD-6 Vishay Nobel Load Cell FEATURES • Capacity range: 50, 100, 200, 400, and 1000kN 11.2K, 22.5K, 45K, 90K, and 225K lb • Cylindrical shape for easy installation • High accuracy • ATEX approved for hazardous areas • High overload capacity
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1000kN
08-Apr-05
Vishay nobel
KISD-6
Vishay nobel kisd
load cell kis- 1-50 KN
KISD
load cell
load cell kis- 1 KN
load cell kis- 3
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Vishay nobel
Abstract: KIS-9 nobel load cell kis- 9 S-691 27 L4154 load cell kis- 1 KN Load cells L5914
Text: Model KIS-9 Vishay Nobel Transducers Weigh Module FEATURES • Capacity range: 5, 10, 20, 50, and 100 kN 1.12K, 2.25K, 4.5K, 11.2K, and 22.5K lb • Simple installation • Moveable load point • Withstands very high lateral forces • Extremely accurate and rugged
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08-Apr-05
Vishay nobel
KIS-9
nobel
load cell kis- 9
S-691 27
L4154
load cell kis- 1 KN
Load cells
L5914
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load cell kis- 1-50 KN
Abstract: kIS-8 Vishay nobel S-69127KARLSKOGA B-455 ph 33 j load cell kis- 1 KN S-69127 ph 77 b548
Text: Model KIS-8 Vishay Nobel Transducers Weigh Module FEATURES • Capacity range - 1, 2, 5, 10, 20, 50, 100, and 200kN 225, 450, 1.12K, 2.25K, 4.5K, 11.2K, 22.4K, and 44.9K lb • Simple installation • Moveable load point • Withstands very high lateral forces
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200kN
08-Apr-05
load cell kis- 1-50 KN
kIS-8
Vishay nobel
S-69127KARLSKOGA
B-455
ph 33 j
load cell kis- 1 KN
S-69127
ph 77
b548
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load cell kis- 1-50 KN
Abstract: kis 1-50 kN
Text: KIS-8 Nobel Weighing Systems Weigh Module FEATURES • Capacity range - 1, 2, 5, 10, 20, 50, 100, and 200kN 225, 450, 1.12K, 2.25K, 4.5K, 11.2K, 22.4K, and 44.9K lb • Simple installation • Moveable load point • Withstands very high lateral forces • Extremely accurate and rugged
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200kN
22-Feb-10
load cell kis- 1-50 KN
kis 1-50 kN
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Untitled
Abstract: No abstract text available
Text: KIS-1 BLH/Nobel Weighing Systems Weigh Module FEATURES • Capacity range: 50, 100, 200, 300, and 500kN 11.2K, 22.4K, 44.9K, 67.5K, and 112.4Klb Simple installation Moveable load point Withstands very high lateral forces Extremely accurate and rugged
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500kN
27-Apr-2011
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Vishay nobel
Abstract: No abstract text available
Text: KIS-2 BLH/Nobel Weighing Systems Weigh Module FEATURES • Capacity range: 0.5, 2, 5, 10, 20, 30, and 50kN 112, 450, 1.12K, 2.25K, 4.5K, 6.75K, and 11.2Klb Simple installation Moveable load point Withstands very high lateral forces Extremely accurate and rugged
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27-Apr-2011
Vishay nobel
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Untitled
Abstract: No abstract text available
Text: KIS-3 BLH/Nobel Weighing Systems Weigh Module FEATURES • Capacity range: 1, 2, 5, 10, and 20kN 225, 450, 1.12K, 2.25K, and 4.5Klb Simple installation Moveable load point Withstands very high lateral forces Extremely accurate and rugged
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27-Apr-2011
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BLH transducer
Abstract: DXt-40 BLH load cell Vishay nobel web Tension control system BLH load cell for web tension celtron vishay lcp vishay sr4 BLH load cell kis
Text: V I S H A Y I N T E R T E C H N O L O G Y, I N C . H T U W E B T E NSION M E A S U R E M E NT SYSTEMS Vishay BLH • Measure both X and Y axis tension signal components, simultaneously • Calculate precise resultant force FR • Display left, right, differential, and total tension
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SE-691
FIN-02420
VTR-PL0012-0408
BLH transducer
DXt-40
BLH load cell
Vishay nobel
web Tension control system
BLH load cell for web tension
celtron
vishay lcp
vishay sr4
BLH load cell kis
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load cell kis- 9
Abstract: No abstract text available
Text: HM5116100B Series 16,777,216-word x 1-bit Dynamic Random Access Memory HITACHI ADE-203-371A Z Rev. 1.0 Nov. 10, 1995 Description The Hitachi HM5116100B is a CMOS dynamic RAM organized 16,777,216-word x 1-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5116100B offers Fast Page
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HM5116100B
216-word
ADE-203-371A
mW/385
mW/358
16-bit
HM51161
load cell kis- 9
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DF9B-31P-1V
Abstract: DF9B-31S-1V QZ-19-3F01 PH-BLC08-K2
Text: S P E SPEC.NO. T Q 3 C - 8 E A C 0 - E LAAZLLl-01 DATE J u l y 17,1999 C FOR T Y P E ; KCB 0 8 4 S V 1 A D - G 4 0 C O N T E N T S 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. 17. 18. Application C o n s t r u c t i o n and Outline Mecha n i c a l S p e c i f i c a t i o n s
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LAAZLLl-01
SV1AD-G40
DF9B-31P-1V
DF9B-31S-1V
QZ-19-3F01
PH-BLC08-K2
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Untitled
Abstract: No abstract text available
Text: •«»•gì gl- MICRON TECHNOLOGY INC »Min i1,‘i-,.1j, Éinttlr^rirrr- BflE D bill 54*5 00Q231S 4 rr? T*’ . IMRN ■"* 1 MEG DRAM MODULE X 8 DRAM FAST PAGE MODE • Industry standard pinout in a 30-pin, single-in-line memory module • High-performance, CMOS silicon gate process
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00Q231S
30-pin,
450mW
024-cycle
T-46-23-17
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Untitled
Abstract: No abstract text available
Text: MICRON TECHNOLOGY INC DRAM MODULE FAST PAGE MODE PIN ASSIGNMENT Top View • Industry standard pinout in a 72-pin single-in-line package • High-performance CMOS silicon gate process. • Single 5V ±10% power supply • All inputs, outputs and clocks are fully TTL and
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72-pin
800mW
512-cycle
100ns
T-46-23-17
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ah rzj
Abstract: MSM511002-10 MSM511002-12
Text: O K I d SEMICONDUCTOR B d s e GR O U P 10E D | b ? 2 M B LlO □ □□Mlfl'i fl | m i c o n d u c t o r - - r - y fc - a a - MSM511002RS/JS/ZS . 1,048,576-W ORD X 1 -BITS DYNAMIC RAM GENERAL DESCRIPTION The MSM 511002 is a new generation dynamic RAM organized as 1,048,576 words by 1 bit. The
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CI11SI
MSM511002RS/JS/ZS
576-WQRD
MSM511002
18-pin
MSM511002-10
MSM511002-12
ah rzj
MSM511002-10
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TL 058 op amp data
Abstract: No abstract text available
Text: LM V831 ,L M V 8 32 ,LM V 8 3 4 LMV831 Single/ LMV832 Dual/ LMV834 Quad 3.3 MHz Low Power CMOS, EMI Hardened Operational Amplifiers T ex a s In s t r u m e n t s Literature Number: SNOSAZ6A a l Sem iconductor LMV831 Single/ LMV832 Dual/ LMV834 Quad 3.3 MHz Low Power CMOS, EMI Hardened Operational
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LMV831
LMV832
LMV834
LMV831,
LMV832,
125BD
TL 058 op amp data
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PD41264
Abstract: PD41264V-12 pd41264v UPD41264 C-15 JUPD41264
Text: SEC JJPD41264 Dual-Port Graphics Buffer NEC Electronics Inc. Description Features The /;PD41264 is a dual-port graphics buffer equipped with a 64K x 4-bit random access port and a 256 x 4-bit serial read port. The serial read port is connected to an internal 1024-bit data register through a 256 x 4-bit
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uPD41264
PD41264
1024-bit
11PD41264
JJPD41264
fiPD41264
PD41264V-12
pd41264v
C-15
JUPD41264
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Untitled
Abstract: No abstract text available
Text: LMV851 ,LMV852,LMV854 LMV851/LMV852/LMV854 8 MHz Low Power CMOS, EMI Hardened Operational Amplifiers T exa s ÌNSTRUM ENTS Literature Number: SNOSAW1 £/r Semiconductor LMV851/LM V852/LM V854 8 MHz Low Power CMOS, EMI Hardened Operational Amplifiers General Description
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LMV851
LMV852
LMV854
LMV851/LMV852/LMV854
LMV851/LM
V852/LM
LMV851
/LMV852/LMV854
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TH58V128FT
Abstract: No abstract text available
Text: T O S H IB A TH58V128FT TENTATIVE TOSHIBA M O S DIGITAL INTEGRATED CIRCUIT SILICON GATE CM O S 128 M b it 16 M X 8 bit C M O S N A N D E2PR O M DESCRIPTION The TH58V128 device is a single 3.3 volt 128 M (138,412,032) bit NAND Electrically Erasable and Programmable Read Only Memory (NAND EEPROM) organized as 528 bytes X 32 pages X 1024 blocks.
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TH58V128FT
TH58V128
44/40-P-400-0
TH58V128FT
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AN9308
Abstract: TDA4690 FBL AN9308 TDA3602 philips 116 k3 capacitor nK13 TDA8708a TP220 74F86 TDA8702
Text: APPLICATION NOTE THE 8 BIT HIGH SPEED, HIGH PERFORMANCE DATA CONVERTER TDA8708A VIDEO ADC AN9308 Philips Semiconductors PHILIPS PHILIPS Application Note The 8 bit high speed, high performance data converter TDA8708A video ADC Author - Patrick LEJOLY Application Laboratory PARIS, France
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TDA8708A
AN9308
FBL/AN9308
TDA4690
FBL/AN9308
74F86
74HCT123
74HCT157
AN9308
FBL AN9308
TDA3602
philips 116 k3 capacitor
nK13
TP220
TDA8702
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE TC59S6408/04FT/FTL-80,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 2,097,152-WORDX4-BANKx8-BIT SYNCHRONOUS DYNAMIC RAM 4,194,304-WORDx4-BANKx4-BIT SYNCHRONOUS DYNAMIC RAM DESCRIPTION The TC59S6408FT/FTL and TC59S6404FT/FTL are CMOS synchronous dynamic random access
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TC59S6408/04FT/FTL-80
152-WORDX4-BANKx8-BIT
304-WORDx4-BANKx4-BIT
TC59S6408FT/FTL
TC59S6404FT/FTL
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