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    LN306 Price and Stock

    Amphenol Communications Solutions G800LN306018TDHR

    PIN HEADER 2.54MM PITCH STR DIP,
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    DigiKey G800LN306018TDHR Bulk 4,500
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    • 10000 $0.17812
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    Amphenol Corporation G800LN306018TDHR

    Headers & Wire Housings Pin Header 2.54mm Pitch STR DIP,1x2Pin,Gold Flash,LCP,5.84mm*2.54mm*2.79mm,Color-Black,T&R W/CAP,Halogen Free
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics G800LN306018TDHR
    • 1 $0.41
    • 10 $0.35
    • 100 $0.272
    • 1000 $0.181
    • 10000 $0.155
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    INA Bearings ZKLN3062-2Z-XL

    Needle Roller/Axial Cylindrical RB, 30mm ID, 62mm OD, 28mm Width | INA Bearings (Schaeffler) ZKLN3062-2Z-XL
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    RS ZKLN3062-2Z-XL Bulk 2 Weeks 1
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    INA Bearings ZKLN3062-2RS-XL

    Needle Roller/Axial Cylindrical RB, 30mm ID, 62mm OD, 28mm Width | INA Bearings (Schaeffler) ZKLN3062-2RS-XL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS ZKLN3062-2RS-XL Bulk 2 Weeks 1
    • 1 $1548.81
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    • 100 $1548.81
    • 1000 $1548.81
    • 10000 $1548.81
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    INA Bearings ZKLN3062-2RS-PE

    Needle Roller/Axial Cylindrical RB, 30mm ID, 62mm OD, 28mm Width | INA Bearings (Schaeffler) ZKLN3062-2RS-PE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS ZKLN3062-2RS-PE Bulk 2 Weeks 1
    • 1 $1187.67
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    LN306 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    DIM250PKM33-TL000

    Abstract: DIM250PKM33-TL
    Text: DIM250PKM33-TL000 IGBT Chopper Module DS6117-1 July 2013 LN30666 FEATURES KEY PARAMETERS • Low VCE(sat) Device  10µs Short Circuit Withstand  High Thermal Cycling Capability VCES VCE(sat) * (typ) IC (max) IC(PK) (max)  High Current Density Enhanced DMOS SPT


    Original     		DIM250PKM33-TL000 DS6117-1 LN30666) 1200Vnames DIM250PKM33-TL000 DIM250PKM33-TL PDF

    DIM250PLM33-TL000

    Abstract: DIM250PLM33-TL
    Text: DIM250PLM33-TL000 IGBT Chopper Module DS6115-1 July 2013 LN30664 FEATURES KEY PARAMETERS • Low VCE(sat) Device  10µs Short Circuit Withstand  High Thermal Cycling Capability VCES VCE(sat) * (typ) IC (max) IC(PK) (max)  High Current Density Enhanced DMOS SPT


    Original     		DIM250PLM33-TL000 DS6115-1 LN30664) DIM250PLM33-TL000 DIM250PLM33-TL PDF

    Untitled

    Abstract: No abstract text available
    Text: DIM250PLM33-TS000 IGBT Chopper Module DS6108-1 June 2013 LN30636 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  High Current Density Enhanced DMOS SPT VCES VCE(sat) * (typ) IC (max) IC(PK) (max)  Isolated AlSiC Base with AlN Substrates


    Original     		DIM250PLM33-TS000 DS6108-1 LN30636) 240names PDF

    DRD1010F60

    Abstract: No abstract text available
    Text: DRD1010F60 Rectifier Diode DS5984-2 June 13 LN30615 FEATURES • Double Side Cooling  High Surge Capability KEY PARAMETERS VRRM IF(AV) IFSM APPLICATIONS  Rectification  Free-wheel Diode  DC Motor Control  Power Supplies  Welding  Battery Chargers


    Original     		DRD1010F60 DS5984-2 LN30615) 6500A DRD1010F59 DRD1010F58 DRD1010F57 DRD1010F56 DRD1010F55 DRD1010F60 PDF

    Untitled

    Abstract: No abstract text available
    Text: DIM1000ECM33-TL000 IGBT Chopper Module DS6105-1 June 2013 LN30633 FEATURES KEY PARAMETERS • Low VCE(sat) Device  10µs Short Circuit Withstand  High Thermal Cycling Capability VCES VCE(sat) * (typ) IC (max) IC(PK) (max)  High Current Density Enhanced DMOS SPT


    Original     		DIM1000ECM33-TL000 DS6105-1 LN30633) PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Information Data DIM400XCM45-TS001 IGBT Chopper Module DS6110-1 June 2013 LN30638 FEATURES KEY PARAMETERS • 10.2kV Isolation  10µs Short Circuit Withstand  High Thermal Cycling Capability VCES VCE(sat) * (typ) IC (max) IC(PK) (max) 


    Original     		DIM400XCM45-TS001 DS6110-1 LN30638) PDF

    Untitled

    Abstract: No abstract text available
    Text: DRD3390V40 Rectifier Diode DS6074-2 June 13 LN30616 FEATURES • Double Side Cooling  High Surge Capability KEY PARAMETERS APPLICATIONS  Rectification  Free-wheel Diode  DC Motor Control  Power Supplies  Welding  Battery Chargers VRRM


    Original     		DRD3390V40 DS6074-2 LN30616) 2500A DRD3390V39 DRD3390V38 DRD3390V37 DRD3390V36 DRD3390V35 PDF

    Untitled

    Abstract: No abstract text available
    Text: DIM1000NSM33-TL000 Single Switch IGBT Module DS6109-1 June 2013 LN30637 FEATURES KEY PARAMETERS • Low VCE(sat) Device  10µs Short Circuit Withstand  High Thermal Cycling Capability VCES VCE(sat) * (typ) IC (max) IC(PK) (max)  High Current Density Enhanced DMOS SPT


    Original     		DIM1000NSM33-TL000 DS6109-1 LN30637) PDF

    DIM250PHM33-TL000

    Abstract: DIM250PHM33-TL
    Text: DIM250PHM33-TL000 Half Bridge IGBT Module DS6116-1 July 2013 LN30665 FEATURES KEY PARAMETERS • Low VCE(sat) Device  10µs Short Circuit Withstand  High Thermal Cycling Capability VCES VCE(sat) * (typ) IC (max) IC(PK) (max)  High Current Density Enhanced DMOS SPT


    Original     		DIM250PHM33-TL000 DS6116-1 LN30665) DIM250PHM33-TL000 DIM250PHM33-TL PDF

    DFM100PXM33-F000

    Abstract: No abstract text available
    Text: DFM100PXM33-F000 Fast Recovery Diode Module Replaces DS5907-2 DS5907-3 April 2013 LN30630 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge  High Switching Speed  Low Forward Volt Drop  Isolated AlSiC Base With AlN Substrates


    Original     		DFM100PXM33-F000 DS5907-2 DS5907-3 LN30630) DFM100PXM33-F000 PDF

    Untitled

    Abstract: No abstract text available
    Text: DRD2960Y40 Rectifier Diode DS5983-2 June 13 LN30617 FEATURES • Double Side Cooling  High Surge Capability KEY PARAMETERS APPLICATIONS  Rectification  Free-wheel Diode  DC Motor Control  Power Supplies  Welding  Battery Chargers VRRM


    Original     		DRD2960Y40 DS5983-2 LN30617) 2500A DRD2960Y39 DRD2960Y38 DRD2960Y37 DRD2960Y36 DRD2960Y35 PDF

    Untitled

    Abstract: No abstract text available
    Text: DFM100PXM33-F000 Fast Recovery Diode Module Replaces DS5907-2 DS5907-3 April 2013 LN30630 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge  High Switching Speed  Low Forward Volt Drop  Isolated AlSiC Base With AlN Substrates


    Original     		DFM100PXM33-F000 DS5907-2 DS5907-3 LN30630) DFM100PXM33-F000 PDF

    DIM1500ASM33-TL001

    Abstract: No abstract text available
    Text: DIM1500ASM33-TL001 Single Switch IGBT Module DS6103-1 June 2013 LN30625 FEATURES KEY PARAMETERS • Low VCE(sat) Device  10.2kV Isolation  10µs Short Circuit Withstand VCES VCE(sat) * (typ) IC (max) IC(PK) (max)  High Thermal Cycling Capability


    Original     		DIM1500ASM33-TL001 DS6103-1 LN30625) DIM1500ASM33-TL001 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Information Data DIM400XCM45-TS000 IGBT Chopper Module DS6111-1 June 2013 LN30639 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  High Current Density Enhanced DMOS SPT VCES VCE(sat) * (typ) IC


    Original     		DIM400XCM45-TS000 DS6111-1 LN30639) PDF

    Untitled

    Abstract: No abstract text available
    Text: DRD1010F60 Rectifier Diode DS5984-2 June 13 LN30615 FEATURES • Double Side Cooling  High Surge Capability KEY PARAMETERS VRRM IF(AV) IFSM APPLICATIONS  Rectification  Free-wheel Diode  DC Motor Control  Power Supplies  Welding  Battery Chargers


    Original     		DRD1010F60 DS5984-2 LN30615) 6500A DRD1010F59 DRD1010F58 DRD1010F57 DRD1010F56 DRD1010F55 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Information Data DIM1200ASM45-TS001 Single Switch IGBT Module DS6107-1 June 2013 LN30635 FEATURES KEY PARAMETERS • 10.2kV Isolation  10µs Short Circuit Withstand  High Thermal Cycling Capability VCES VCE(sat) * (typ) IC (max) IC(PK)


    Original     		DIM1200ASM45-TS001 DS6107-1 LN30635) PDF

    DIM1000XSM33-TL001

    Abstract: No abstract text available
    Text: DIM1000XSM33-TL001 Single Switch IGBT Module DS6104-1 June 2013 LN30632 FEATURES KEY PARAMETERS • 10.2kV Isolation  Low VCE(sat) Device  10µs Short Circuit Withstand VCES VCE(sat) * (typ) IC (max) IC(PK) (max)  High Thermal Cycling Capability


    Original     		DIM1000XSM33-TL001 DS6104-1 LN30632) DIM1000XSM33-TL001 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Information Data DIM400XCM45-TS000 IGBT Chopper Module DS6111-1 June 2013 LN30639 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  High Current Density Enhanced DMOS SPT VCES VCE(sat) * (typ) IC


    Original     		DIM400XCM45-TS000 DS6111-1 LN30639) PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Information Data DIM1200ASM45-TS001 Single Switch IGBT Module DS6107-1 June 2013 LN30635 FEATURES KEY PARAMETERS • 10.2kV Isolation  10µs Short Circuit Withstand  High Thermal Cycling Capability VCES VCE(sat) * (typ) IC (max) IC(PK)


    Original     		DIM1200ASM45-TS001 DS6107-1 LN30635) PDF

    Untitled

    Abstract: No abstract text available
    Text: DIM250PKM33-TL000 IGBT Chopper Module DS6117-1 July 2013 LN30666 FEATURES KEY PARAMETERS • Low VCE(sat) Device  10µs Short Circuit Withstand  High Thermal Cycling Capability VCES VCE(sat) * (typ) IC (max) IC(PK) (max)  High Current Density Enhanced DMOS SPT


    Original     		DIM250PKM33-TL000 DS6117-1 LN30666) PDF

    Untitled

    Abstract: No abstract text available
    Text: DIM1500ESM33-TL000 Single Switch IGBT Module DS6112-1 June 2013 LN30640 FEATURES KEY PARAMETERS • Low VCE(sat) Device  10µs Short Circuit Withstand  High Thermal Cycling Capability VCES VCE(sat)* (typ) IC (max) IC(PK) (max)  High Current Density Enhanced DMOS SPT


    Original     		DIM1500ESM33-TL000 DS6112-1 LN30640) PDF

    DRD3390V40

    Abstract: No abstract text available
    Text: DRD3390V40 Rectifier Diode DS6074-2 June 13 LN30616 FEATURES • Double Side Cooling  High Surge Capability KEY PARAMETERS APPLICATIONS  Rectification  Free-wheel Diode  DC Motor Control  Power Supplies  Welding  Battery Chargers VRRM


    Original     		DRD3390V40 DS6074-2 LN30616) 2500A DRD3390V39 DRD3390V38 DRD3390V37 DRD3390V36 DRD3390V35 DRD3390V40 PDF

    DIM1000NSM33-TL000

    Abstract: DIM1000NSM33-TL
    Text: DIM1000NSM33-TL000 Single Switch IGBT Module DS6109-1 June 2013 LN30637 FEATURES KEY PARAMETERS • Low VCE(sat) Device  10µs Short Circuit Withstand  High Thermal Cycling Capability VCES VCE(sat) * (typ) IC (max) IC(PK) (max)  High Current Density Enhanced DMOS SPT


    Original     		DIM1000NSM33-TL000 DS6109-1 LN30637) DIM1000NSM33-TL000 DIM1000NSM33-TL PDF

    DRD2960Y40

    Abstract: No abstract text available
    Text: DRD2960Y40 Rectifier Diode DS5983-2 June 13 LN30617 FEATURES • Double Side Cooling  High Surge Capability KEY PARAMETERS APPLICATIONS  Rectification  Free-wheel Diode  DC Motor Control  Power Supplies  Welding  Battery Chargers VRRM


    Original     		DRD2960Y40 DS5983-2 LN30617) 2500A DRD2960Y39 DRD2960Y38 DRD2960Y37 DRD2960Y36 DRD2960Y35 DRD2960Y40 PDF