T5747
Abstract: No abstract text available
Text: M83 Datamate Connectors Mixed Technology Series Part Numbering System M83–L # #X #X N XX – AA BB – XXX Product Range Part number of special contact Gender See page 66, or 000 if none loaded F Female Socket M Male (Plug) NUMBER OF SPECIAL CONTACTS ON OPPOSITE SIDE
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Untitled
Abstract: No abstract text available
Text: Produktdatenblatt Serie: BS-P0x-x3318Wx-EU LED Panel | 18 W | 300 x 300 mm | 1440 lm | 2700 K / 4000 K / 5000 K | CRI Ra 80 / 90 Leuchtentyp: LED- Einbauleuchte mit umlaufender planer Lichtstrahlung. Anwendung, Einsatzmöglichkeiten: Für innovative und repräsentative Beleuchtung bzw. Ergänzungsbeleuchtung in Verkaufsräumen, Foyers, Fluren,
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BS-P0x-x3318Wx-EU
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Untitled
Abstract: No abstract text available
Text: Produktdatenblatt Serie: BS-P0x-x31236Wx-EU LED Panel | 36 W | 300 x 1200 mm | 3130 lm | 2700 K / 4000 K / 5000 K | CRI Ra 80 / 90 Leuchtentyp: LED- Einbauleuchte mit umlaufender planer Lichtstrahlung. Anwendung, Einsatzmöglichkeiten: Für innovative und repräsentative Beleuchtung bzw. Ergänzungsbeleuchtung in Verkaufsräumen, Foyers, Fluren,
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BS-P0x-x31236Wx-EU
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Si446x
Abstract: No abstract text available
Text: AN643 Si446x/Si4362 RX LNA Matching 1. Introduction The purpose of this application note is to provide a description of the impedance matching of the RX differential low noise amplifier LNA on the Si446x/Si4362 family of RFICs. It is desired to simultaneously achieve two goals with the matching network:
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AN643
Si446x/Si4362
Si446x
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26180
Abstract: LM14250 LSH 26180 LSH 14250 LiMnO2 memoguard 6135-01-235-4168 LS 33600 6135997989851 BA5112U
Text: PRIMARY LITHIUM BATTERY SELECTOR GUIDE T H E B AT T E RY C O M PA N Y SAFT LITHIUM BATTERIES: EXCEEDING YOUR NEEDS For more than 30 years, Saft has pioneered, in Europe, North America and Asia/Pacific, the development and production of primary lithium cells
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memoguard
Abstract: LM 327 CN LSH 26180 LiMnO2 LSH 20 safety Electronic toll collect ba5112 leclanche LSH 14250 SAFT space
Text: Primary lithium batteries Selector guide February 2005 Saft Lithium batteries meeting your needs… For more than 31 years, Saft has pioneered the development and production of primary lithium cells and battery packs in Europe, North America and Asia/Pacific.
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2SK1227
Abstract: 2sk1210 2SK1213 2SK1217 2SK1229 2SK1222 2SK1239 2SK1231 2SK120 csd 1060
Text: ft f m % ít ffl € m m & X % * fr K * V ft (V) 2SK1203 a i SW-Reg, D D C MOS N E 9 00 D S S ±20 2SK1204 H i SW-Reg, D D C MO S N E 900 D SS ±20 a» X P d/Pc h I* ft* (A) (max) (A) Vd s (V) (min) (V) (max) V d s (V) (V) (13=25^) tí g m (min) (typ)
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2SK1203
2SK1204
2SK1205
2SK1206
2SK1211
2SK1230
115nstyp
2SK1231
2SK1232
2SK1227
2sk1210
2SK1213
2SK1217
2SK1229
2SK1222
2SK1239
2SK1231
2SK120
csd 1060
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2SK1143
Abstract: 2SK1142 2SK1117 2SK1139 2SK1121 2SK1138 2SK1118 2SK1136 2sk1114 2SK1105
Text: r. . . . m *t £ £ m ÌÈ Í Í t H ^ fë aË 2 P d /P c h «1 £ Hf m f* V * 2SKU05 -M tn m SW-Reg, UPS, DDC MOS N E 800 DSS 2SK1108 NEC C-MIC, Imp-C J N D 20 DSX 2SK1109 NEC (V) » * ±20 S (A) & 3 D (W) lass (max) (A) 80 ±100n 10m G 100m fà % (min) (max) Vds
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2SK1105
2SK1108
2SK1109
2SKU12
2SK1113
170ns.
550nstyp
VDD-30V
2SK1134
155ns,
2SK1143
2SK1142
2SK1117
2SK1139
2SK1121
2SK1138
2SK1118
2SK1136
2sk1114
2SK1105
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MAX326
Abstract: MAX326M MAX327 MAX327M
Text: - 252 MAX326/MAX327 - • « S W ÍS tt SPST C M O S 7 t P ^ '- X " f V + = + 1 5 V , V = — 15V , m G N D = 0 V, iê 4k =f~ ( <7 r •■/ F X - O O ' ÿ ) T„ = 25 t ) M A X 326M , M A X 327M ft fi 'h m m ^DS (ON) VIN= 2 .4V (M A X 327) Vq = + 1 0 V , / s = 1 0 0 M
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MAX326/MAX327
MAX326M.
MAX327M
MAX326C/E,
327C/E
MAX326)
MAX327)
MAX326
MAX326M
MAX327
MAX327M
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diode 2u
Abstract: No abstract text available
Text: 2SK1052 2052B AP A d va n c e d P e rfo rm a n c e Series V dss = 4 5 0 V N Channel Power M OSFET '£'3439 F eatu res • Low ON-state resistance. •Very high-speed switching. A bsolute M axim um R atings at Ta = 25°C Drain to Source Voltage Vdss Gate to Source Voltage
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2SK1052
2052B
10//S
diode 2u
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2SK1383
Abstract: 2SK1380 IM 337 2SK1379 2SK1388 IM617 2SK1381 2SK1390 2SK1382 2SK1384
Text: - 100 - m % *± £ & m ft it f € t ? * K Ü A V fé Ê V* I* * ft * (V) (A) 5 X ft P d /P ch <K) Igss (max) (A) Vg s (V) m M Id s (min) (max) Vd s (A) (A) (V) (Ta=25cC) 'te (min) (max) Vd s (V) (V) (V) £m (min) (typ) Vd s (S) (S) (V) Id (A) Id (A)
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2SK1379
2SK1380
2SK1381
2SK1382
2SK1383
100nstyp
2SK1400
2SK1400A
155nstyp
2SK1383
IM 337
2SK1379
2SK1388
IM617
2SK1381
2SK1390
2SK1384
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LM310
Abstract: lm210 voltage follower D2815 LM110 LM102 LM210
Text: TYPES LM110, LM210, AND LM310 VOLTAGE FOLLOWERS LINEAR INTEGRATED CIRCUITS D 2815. O CTOBER 1983 . JG D U A L -IN -L IN E P AC KA G E L M 1 10 . Input Current . . . 10 n A M ax . . JG OR P D U A L-IN -LIN E PAC KAG E LM 210. LM 310 Sm all-Signal Bandwidth . . . 20 M H z
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LM110,
LM210,
LM310
D2815.
LM210.
LM310
LM110
lm210 voltage follower
D2815
LM102
LM210
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LM 327
Abstract: No abstract text available
Text: REV. NC DATE DESCRIPTION 0 6 /2 1 /0 5 INITIAL RELEASE •4.00 [.158] ■8.30 [.327] 6.20 [.244]- \ w ss\S'ss \ y \ \ RECOMMENDED CABLE STRIPPING DIM’S in co o ■ *— CM CM o O CM CD CM •— CD CD CM - 1 11 O O CD LO CD LO CD 'S . |\ ■s. 'S- _T“L
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120mm
R-240)
122414RP
22/122414RP
LM 327
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2SB310
Abstract: TRANSISTOR manual GEDB
Text: 5 - - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSW HE New T ransistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will m ake full use of the data provided in this manual by referring to the Japanese-English
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7cS55T)
2SB310
TRANSISTOR manual
GEDB
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2SK1073
Abstract: lm815 2SK1074 LM8002 2SK1078 2SK1079 2SK1082 2SK1092 2SK1084 2SK1100
Text: m s tí: % m & m iS H f V j Hi A K V * * 2S K 1 0 6 9 H # LF A J N D -4 0 G D S BÍL LF/HF A J N D -2 2 G D O 2SK1074 S M 2SK1078 2SK1079 të S P d/Pc h 2SK1070 2SK1073 £ 1 9} * (V) - 22 0 & (A) * (W) I gss (max) (A) Vg s (V) (min) (A) % (max) V d s (A)
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2sk1069
2sk1070
2sk1073
2SK1074
2sk1078
130nstyp
2SK1096
120nstyp
VDD-30V
2SK1097
2SK1073
lm815
LM8002
2SK1078
2SK1079
2SK1082
2SK1092
2SK1084
2SK1100
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2SC1346
Abstract: 2SC1347 2SA730 2SC1317 2SA731 2SC1318
Text: 2 SC 1346, 2 SC 1347 2 S C NPN T 3 4 6 ; 2 S C 1 3 4 7 + NPN Epitaxial Planar Output Amplifier 2SA730, ¿JSA731 ± z i > ~/U j t> & V /Complementary Pair with 2SA730, 2SA731 if i^/Features • Z2 u ? # • ^ * y VCECsat • 2SA730, 2SA731 v y ° ') s V $ V
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2SC1346,
2SC1347
2SCT346,
2SA730,
SA731
2SA731
2SA731
2SC1346
2SC1347
2SA730
2SC1317
2SC1318
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Untitled
Abstract: No abstract text available
Text: NJU64-07C DOT M A T R I X LCD 40-0U T SEGMENT PACKAGE OUTLINE GENERAL DESCRIPTION The NJU6407C is a serial input, 40-out segment driver for dot matrix LCDs, especial Iy useful as extension driver for LCD controller drivers like NJU6408B. It consists of 40-bit two of 20-bit shift register,
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40-0U
NJU6407C
40-out
NJU6408B.
40-bit
20-bit)
40-bit
20-bit
40-driver
DDDL32S
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Untitled
Abstract: No abstract text available
Text: _L REV. BCaNCL 1. In su la to r: UL 9 4 V - 0 LCF 2. Contacst: C o p p e r allo y 53.00 2.0Ö7 s z>- * C olor : B la c k 42.545 * With 2 PCS M2 screw s 1.B75 * A ccep t PCMCIA Type I, Type n or Type III card 0L3OiO.O5 S «l.flöltD.OOS O rd erin g In fo rm a tio n :
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1279G1S
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Untitled
Abstract: No abstract text available
Text: 7. Surface Mounting Device y 3 y /'auir-.N Schottky Barrier Diode y -o m Twin Diode fi/E OUTLINE DIMENSIONS DE10SC3L 30V 1QA •S M D • T j 150°C • fiV F = 0 .4 5 V • P rrsm •S R « g • D C /D C ^ V A '-d ? •m m, v-h. •a«. iK—s>yims Mfà&m
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DE10SC3L
A2113A7
ood32c5
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test bux 47
Abstract: 1 w NPN EPITAXIAL PLANAR TYPE ic5m LM 328 ic
Text: Temic BPW96 S e m i n i n il u c I h r s Silicon NPN Phototransistor Description B PW 96 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T - l Vj 10 5 m m package. Due to its w aterclear epoxy the device is sensitive to visible and near infrared radiation.
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BPW96
94S297
15-Jut-96
15-Jul-96
test bux 47
1 w NPN EPITAXIAL PLANAR TYPE
ic5m
LM 328 ic
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Untitled
Abstract: No abstract text available
Text: 2SK1052 2052B AP A d va n ce d P e rfo rm a n c e Series Voss = 4 5 0 V N Channel Power MOSFET 3439 Features • Low ON-state resistance. •Very high-speed Switching. A bsolute M axim um R atings at Ta = 25°C Drain to Source Voltage Vdss Gate to Source Voltage
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2SK1052
2052B
DD1M123
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825m
Abstract: DG300A DG300AA HI300
Text: DG300A SPST CM OS ¥= . T >-r / •: J.-; / I> +*. / ✓ \ ^ • X 'f S P S T I jig iii CMOS . » A W + I J ,!s J f I n U ' J ' C * '• . T ) l ) W ifè < v m ,'M T -r •a f -^-1 s rf- /-+ —t" \ . S M / r* ‘-' I ' . f'PT', ^ -> B # c o r- f-n ^ " A * 1 a - ^ $ 5 S f i ± 15V,
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DG300A
30VP-P
30ntyp
500kHz
825m
DG300AA
HI300
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LM 327 CN
Abstract: LM 327 N 2088a
Text: Ordering number : EN 3 9 6 0 ¡I N o .3960 FP101 P N P E p ita x ia l P la n a r S ilico n T ra n s is to r / C o m p o site S c h o ttk y B a r r ie r D iode SA%YOi DC/DC C onverter A p p lica tio n s F e a tu r e s • C om posite type w ith a P N P tr a n s is to r a n d a S c h o ttk y b a r r ie r diode c o n ta in e d in one p ack ag e,
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FP101
2SB1121
05-05C
LM 327 CN
LM 327 N
2088a
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LM 327 N
Abstract: No abstract text available
Text: T Z E IC H N U N G G ES C H Ü T Z T DURCH C O P Y R IG H T AM P D E U T S C H L A N D ALLE RECHTE REV. 1980 GMBH V O R BEH ALTEN ÄNDERUNG ZEICHNUNG IN EUROPEAN P R O JE C T IO N GEÄNDERT 3 0 . 11.90 A . HO 3 LÖTLÄNGE VON 3 IN 3 .1 1 2 .0 3 .9 2 A . HO
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00S694
LM 327 N
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