Untitled
Abstract: No abstract text available
Text: UCC3911 y UNITRODE PRELIMINARY Lithium-Ion Battery Protector FEATURES BLOCK DIAGRAM • Protects Sensitive Lithium-Ion Cells from Overcharging and Over-Discharging • Used for Two-Cell Lithium-Ion Battery Packs • No External FETs Required • Provides Protection Against
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UCC3911
UCC3911
UCC3911.
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12v 1200mah battery NiMH
Abstract: 12v 1200mah nimh battery db opera 415 12v 1200mah nimh 12v 1200mah battery
Text: y UCC2956 UCC3956 mmm UNITRODE Switch Mode Lithium-Ion Battery Charger Controller FEATURES Precision 4.1V Reference 1% High Efficiency Battery Charger Solution Average Current Mode Control from Trickle to Over Charge Resistor Programmable Charge Currents
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UCC2956
UCC3956
UCC3956
SEM700,
680pF
12v 1200mah battery NiMH
12v 1200mah nimh battery
db opera 415
12v 1200mah nimh
12v 1200mah battery
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Untitled
Abstract: No abstract text available
Text: y UCC3958 -1/-2/-3/-4 UNITRODE PRELIMINARY Single Cell Lithium-Ion Battery Protection Circuit FEATURES • Protects Sensitive Lithium-Ion Cells Form Over Charging and Over Discharging • Dedicated for One Cell Applications • Does Not Require External FETs or Sense
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UCC3958
150mV
300mV
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Untitled
Abstract: No abstract text available
Text: TO SHIBA TPC8103 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE U-MOSII T P C 8 1 03 LITHIUM ION BATTERY PORTABLE MACHINES AND TOOLS INDUSTRIAL APPLICATIONS Unit in mm NOTE BOOK PC 8 5 RUHR" • Low Drain-Source ON Resistance : Rd S (ON)= 9.5mil (Typ.)
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TPC8103
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ru 94v0
Abstract: ru 94v-0
Text: Catalog 130/767 Issued 11-99 Top Load Battery Connector Features: • Accepts all CR2032 lithium ion batteries ■ Self-ejecting design allow s battery to be removed with out tools IfHp ■ Superior retention to pc board or to battery ■ Cost effective
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CR2032
ru 94v0
ru 94v-0
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Untitled
Abstract: No abstract text available
Text: T O SH IB A TPC8302 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2- tt-MOSVI TPC8302 INDUSTRIAL APPLICATIONS U nit in mm LITHIUM ION BATTERY NOTE BOOK PC PORTABLE MACHINES AND TOOLS 2.5V Gate Drive. Low Drain-Source ON Resistance : RDS(ON) = 100m n (Typ.)
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TPC8302
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Untitled
Abstract: No abstract text available
Text: fl TOSHIBA TPC8001 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M O S TYPE tt-M OSVI TPC8001 LITHIUM ION BATTERY PORTABLE MACHINES A N D TOOLS NOTE BOOK PC • • • • INDUSTRIAL APPLICATIONS Unit in mm 8 5 fl fi H fl Low Drain-Source ON Resistance : RßS (ON) ~ lömO (Typ.)
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TPC8001
g--10
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Untitled
Abstract: No abstract text available
Text: TO SHIBA TENTATIVE TPC8007-H TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U -M O SII TPC8007-H NOTE BOOK PC, PORTABLE EQUIPMENTS APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED AND HIGH EFFICIENCY DC-DC CONVERTERS SOP-8 LITHIUM ION BATTERY APPLICATIONS
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TPC8007-H
10//A
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Untitled
Abstract: No abstract text available
Text: TO SHIBA TPC8001 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSVI TPC8001 LITHIUM ION BATTERY PORTABLE MACHINES AN D TOOLS INDUSTRIAL APPLICATIONS Unit in mm NOTE BOOK PC Low Drain-Source ON Resistance : Rd S (ON)= 15mfi (Typ.) High Forward Transfer Admittance: |Yfs| = llS (Typ.)
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TPC8001
15mfi
10//A
20kfl)
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Untitled
Abstract: No abstract text available
Text: TO SHIBA TPC8302 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2- tt-MOSVI TPC8302 LITHIUM ION BATTERY INDUSTRIAL APPLICATIONS Unit in mm NOTE BOOK PC PORTABLE MACHINES AND TOOLS 8 5 RUHR" 2.5V Gate Drive. Low Drain-Source ON Resistance m O
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TPC8302
--20V)
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Untitled
Abstract: No abstract text available
Text: bq4011/bq4011Y 32Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility
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bq4011/bq4011Y
32Kx8
28-pin
10-year
bq4011
144-bit
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Untitled
Abstract: No abstract text available
Text: TPC8075 MOSFETs Silicon N-Channel MOS U-MOS TPC8075 1. Applications • Lithium-Ion Secondary Batteries • Notebook PCs • Mobile Equipments 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 2.1 mΩ (typ.) (VGS = 10 V)
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TPC8075
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Untitled
Abstract: No abstract text available
Text: bq2050H Low-Cost Lithium Ion Power Gauge IC Features General Description ➤ Accurate measurement of available capacity in Lithium Ion batteries The bq2050H Lithium Ion Power Gauge™ IC is intended for batterypack or in-system installation to maintain an accurate record of
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bq2050H
SSYA008
SZZA017A
EV2200
SLUU042
EV2200-50H
SLUU047
SLUU062,
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TPCP8105
Abstract: No abstract text available
Text: TPCP8105 MOSFETs Silicon P-Channel MOS U-MOS TPCP8105 1. Applications • Lithium-Ion Secondary Batteries • Power Management Switches • Notebook PCs 2. Features (1) Small, thin package (2) Low drain-source on-resistance: RDS(ON) = 13.8 mΩ (typ.) (VGS = -4.5 V)
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TPCP8105
TPCP8105
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Untitled
Abstract: No abstract text available
Text: TPCP8305 MOSFETs Silicon P-Channel MOS U-MOS TPCP8305 1. Applications • Lithium-Ion Secondary Batteries • Power Management Switches 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 23 mΩ (typ.) (VGS = -4.5 V)
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TPCP8305
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Untitled
Abstract: No abstract text available
Text: bq4011/bq4011Y 32Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility
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bq4011/bq4011Y
32Kx8
28-pin
10-year
bq4011
144-bit
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Untitled
Abstract: No abstract text available
Text: bq4010/bq4010Y 8Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility
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bq4010/bq4010Y
28-pin
10-year
bq4010
536-bit
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OZ 9998
Abstract: No abstract text available
Text: TPS65800 www.ti.com SLVS606A – SEPTEMBER 2005 – REVISED OCTOBER 2005 INTEGRATED SINGLE-CELL LITHIUM-ION BATTERY- AND POWER-MANAGEMENT IC • FEATURES • • APPLICATIONS • • • L1 PGND1 SM1 GPIO1 53 VIN_SM1 54 SM2 AGND1 55 L2 56 VIN_SM2 PGND2 Portable Media Players
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TPS65800
SLVS606A
20-mA,
600-mA
OZ 9998
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Untitled
Abstract: No abstract text available
Text: BL8528 DESCRIPTION The BL8528 is a synchronous, 1.4MHz, fix frequency PWM Buck converter. It is ideal for powering portable equipment that powered by a single cell Lithium-ion batter, or USB port. The BL8528 can provide up to 3A of load current with output voltage as low as 0.8V. It
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BL8528
BL8528
DFN3x3-10L
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Untitled
Abstract: No abstract text available
Text: bq4010/bq401 OY UNITRODE- 8Kx8 Nonvolatile SRAM Features General Description > D ata retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy
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bq4010/bq401
bq4010
536-bit
bq4010YMA-70N
bq4010-70
bq4010/bq4010Y
bq401Q
150ns
200ns
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Fujikura SM.15-P-8/125-UV/UV-400
Abstract: jdsu OPTICAL SWITCH SM.15-P-8/125-UV/UV-400 lithium niobate Fujikura DC 60 RF JDSU
Text: COMMUNICATIONS COMPONENTS 2x2 High Speed Lithium Niobate Interferometric Switch Key Features • High polarization extinction • Low drive voltage • Low fiber-to-fiber insertion loss • 1550 nm operation Applications The JDSU 2x2 Interferometric Switch is a high extinction, high speed switch.
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498-JDSU
5378-JDSU
Fujikura SM.15-P-8/125-UV/UV-400
jdsu OPTICAL SWITCH
SM.15-P-8/125-UV/UV-400
lithium niobate
Fujikura
DC 60 RF
JDSU
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1604LC
Abstract: battery 9 volt dc 9 volt -9 volt circuit
Text: 3M 746 Wrist Strap Tester Properties Property Typical Values Weight 7 oz. 200 g without battery Power 9-volt regulated 75 mA AC/DC adapter (supplied with 746) Battery 9-volt lithium manganese (NEDA 1604LC) (supplied with 746) *does not contain mercury, cadmium, or lead.
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1604LC)
-750K
1604LC
battery 9 volt
dc 9 volt -9 volt circuit
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Untitled
Abstract: No abstract text available
Text: Doc No. TT4-EA-14491 Revision. 3 Product Standards MOS FET FC8V22080L FC8V22080L Gate resistor installed Dual N-channel MOS FET Unit: mm For lithium-ion secondary battery protection circuits 2.9 0.3 8 7 6 5 1 2 3 4 0.16 Features 2.4 2.8 y Low drain-source ON resistance:Rds on typ. = 13 mΩ（VGS = 4.5 V)
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TT4-EA-14491
FC8V22080L
UL-94
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UR18650s
Abstract: No abstract text available
Text: Lithium Ion UR18650S Features & Benefits Specifications • High drain model high power density • Long, stable power with a flat discharge voltage • Ideal for power tools, Ebikes, and robotics. Rated capacity(1) Min. 1100mAh Capacity(2) Min. 1100mAh
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UR18650S
1100mAh
1200mAh
770mA,
UR18650s
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