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    LINEAR TWIN 20 N Search Results

    LINEAR TWIN 20 N Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation
    TCR3EM33A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 3.3 V, 300 mA, DFN4D Visit Toshiba Electronic Devices & Storage Corporation
    TCR3LM33A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 3.3 V, 300 mA, DFN4D Visit Toshiba Electronic Devices & Storage Corporation
    TCR3UF50A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 5 V, 300 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    LINEAR TWIN 20 N Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    RF MESFET S parameters

    Abstract: transistor GaAs FET s parameters NES2427P-30
    Text: 30 W S-BAND TWIN NES2427P-30 POWER GaAs MESFET FEATURES • • • • OUTLINE DIMENSIONS Units in mm HIGH OUTPUT POWER: 30 W TYP HIGH DRAIN EFFICIENCY: 38% TYP HIGH LINEAR GAIN: 12 dB TYP PUSH-PULL TYPE N-CHANNEL GaAS MESFET PACKAGE OUTLINE T-86 45° R1.2 ± 0.3


    Original     		NES2427P-30 NES2427P-30 24-Hour RF MESFET S parameters transistor GaAs FET s parameters PDF

    RF MESFET S parameters

    Abstract: NES2427P-50
    Text: 50 W S-BAND TWIN NES2427P-50 POWER GaAs MESFET FEATURES • • • OUTLINE DIMENSIONS Units in mm HIGH OUTPUT POWER: 50 W TYP HIGH POWER ADDED EFFICIENCY: 38 % TYP HIGH LINEAR GAIN: 10 dB TYP PACKAGE OUTLINE T-86 45° R1.2 ± 0.3 2.4 ± 0.3 G1 G2 45° 11.4 ± 0.3


    Original     		NES2427P-50 NES2427P-50 24-Hour RF MESFET S parameters PDF

    a 4x transistor

    Abstract: RF MESFET S parameters 500565 NES1823P-100 NES1823
    Text: PRELIMINARY DATA SHEET 100W L-BAND TWIN POWER GaAs MESFET NES1823P-100 OUTLINE DIMENSIONS Units in mm FEATURES • • • • HIGH OUTPUT POWER: 100 W TYP HIGH LINEAR GAIN: 11 dB TYP HIGH DRAIN EFFICIENCY: 50 % TYP @ VDS = 10 V, ID = 6 A, f = 2.2 GHz USABLE IN PUSH-PULL OR BALANCED


    Original     		NES1823P-100 NES1823P-100 24-Hour a 4x transistor RF MESFET S parameters 500565 NES1823 PDF

    high Q notch filter

    Abstract: 50 Hz notch filter adjustable Q notch filter LM102 notch filter twin-t notch filter adjustable notch filter 60 hz notch filter SILVER-MICA C1995
    Text: National Semiconductor Linear Brief 5 March 1969 The twin ‘‘T’’ network is one of the few RC filter networks capable of providing an infinitely deep notch By combining the twin ‘‘T’’ with an LM102 voltage follower the usual drawbacks of the network are overcome The Q is raised


    Original     		LM102 LM102 high Q notch filter 50 Hz notch filter adjustable Q notch filter LM102 notch filter twin-t notch filter adjustable notch filter 60 hz notch filter SILVER-MICA C1995 PDF

    AN1032

    Abstract: NES1823P-70
    Text: PRELIMINARY DATA SHEET 70W L-S BAND TWIN POWER GaAs MESFET FEATURES NES1823P-70 OUTLINE DIMENSIONS Units in mm • • HIGH OUTPUT POWER: 70 W TYP HIGH POWER ADDED EFFICIENCY: 40 % TYP • HIGH LINEAR GAIN: 11 dB TYP at 2.2 GHz PACKAGE OUTLINE T-86 45°


    Original     		NES1823P-70 NES1823P-70 IMT2000 24-Hour AN1032 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET 70 W S-BAND TWIN NES2427P-70 POWER GaAs MESFET FEATURES • • • OUTLINE DIMENSIONS Units in mm HIGH OUTPUT POWER: 70 W TYP HIGH POWER ADDED EFFICIENCY: 40 % TYP HIGH LINEAR GAIN: 10 dB TYP at 2.7 GHz PACKAGE OUTLINE T-86 45° R1.2 ± 0.3


    Original     		NES2427P-70 NES2427P-70 24-Hour PDF

    AN1032

    Abstract: NES2427P-70
    Text: PRELIMINARY DATA SHEET 70 W S-BAND TWIN NES2427P-70 POWER GaAs MESFET FEATURES • • • OUTLINE DIMENSIONS Units in mm HIGH OUTPUT POWER: 70 W TYP HIGH POWER ADDED EFFICIENCY: 40 % TYP HIGH LINEAR GAIN: 10 dB TYP at 2.7 GHz PACKAGE OUTLINE T-86 45° R1.2 ± 0.3


    Original     		NES2427P-70 NES2427P-70 24-Hour AN1032 PDF

    276-145

    Abstract: AN1032 NES1823P-45
    Text: PRELIMINARY DATA SHEET 45W L-S BAND TWIN POWER GaAs MESFET FEATURES • • • NES1823P-45 OUTLINE DIMENSIONS Units in mm HIGH OUTPUT POWER: 45 W TYP HIGH POWER ADDED EFFICIENCY: 45 % TYP at VDS = 12 V, IDSQ = 4 A, f = 2.2 GHz HIGH LINEAR GAIN: 12 dB TYP


    Original     		NES1823P-45 NES1823P-45 24-Hour 276-145 AN1032 PDF

    hearing instrument WDRC

    Abstract: audiometry circuit for hearing aid devices Signal Path Designer Hearing Aid Circuit Diagram circuit diagram of digital hearing aid hearing instrument WDRC DSP
    Text: PARAGON DIGITAL GB3210-SO1 PAL Configuration PRELIMINARY DATA SHEET DESCRIPTION • 4 channel WDRC processing The GB3210-S01 Product Abstraction Layer™ PAL in combination with the GB3210 provides an advanced, four channel Wide Dynamic Range Compression (WDRC) DSP


    Original     		GB3210-SO1 C-101, hearing instrument WDRC audiometry circuit for hearing aid devices Signal Path Designer Hearing Aid Circuit Diagram circuit diagram of digital hearing aid hearing instrument WDRC DSP PDF

    cel AN1032

    Abstract: AN1032 NES2427P-60
    Text: S-BAND PARTIALLY MATCHED NES2427P-60 TWIN POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: 60 W PACKAGE OUTLINE T-92 • LOW DISTORTION: -45 dBc IM3 at 36 dBm SCL 9.7 ± 0.3 R1.2 ± 0.3 2.4 ± 0.3 • HIGH LINEAR GAIN: 12 dB


    Original     		NES2427P-60 NES2427P-60 24-Hour cel AN1032 AN1032 PDF

    uA 726 HC

    Abstract: 24kHz GENNUM DSP HP programmable attenuator circuit diagram of digital hearing aid 1M variable resistor hearing instrument WDRC DSP
    Text: FOUNDATION Digital Single or Dual Channel DSP Compression System GA3216 PRELIMINARY DATA SHEET DESCRIPTION • efficient, high fidelity 1 or 2-channel WDRC signal processing The GA3216 hybrid is a trimmer-configurable DSP system based on a two-channel compression circuit. It can


    Original     		GA3216 uA 726 HC 24kHz GENNUM DSP HP programmable attenuator circuit diagram of digital hearing aid 1M variable resistor hearing instrument WDRC DSP PDF

    LE79Q2281

    Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
    Text: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security


    Original     		PDF

    zxnb4200

    Abstract: zxnb ZLPM3315 zabg6001 zxnb 4200 lnb c-band RF gain stages ZLNB254 ZXNB4200JB16 twin lnb ZXHF5000
    Text: APPLICATION FOCUS Direct Broadcast by Satellite 1 Meeting the challenges of DBS The Direct Broadcast by Satellite DBS market presents system developers with a number of quite specific challenges. High levels of analog device integration can help support the efforts to produce cost-effective, high


    Original     		2002/95/EC) zxnb4200 zxnb ZLPM3315 zabg6001 zxnb 4200 lnb c-band RF gain stages ZLNB254 ZXNB4200JB16 twin lnb ZXHF5000 PDF

    K 1358 fet transistor

    Abstract: AN1032 NES1720P-140
    Text: PRELIMINARY DATA SHEET 140 W L-BAND TWIN POWER GaAs MESFET NES1720P-140 OUTLINE DIMENSIONS Units in mm FEATURES • • • • HIGH OUTPUT POWER: 140 W TYP HIGH LINEAR GAIN: 11 dB TYP HIGH EFFICIENCY: 42% TYP USABLE IN BALANCED OR PUSH-PULL CONFIGURATION.


    Original     		NES1720P-140 NES1720P-140 24-Hour K 1358 fet transistor AN1032 PDF

    ES-2-CFQ-26-120-H-S-DIM-E

    Abstract: ES-2-CFT-39-120-F-LG ES-1-2D-38-UNV-D ES-1-T8-32-120-A-S-1 ES-1-CFT-39-120-A-S-DIM-E ES-2-T8-32-347-A-S B228PUNV-C ES-1-CFT-40-UNV-A C2642UNVBES ES-2-T8-25-120-A-S-DIM-E
    Text: ESI to Universal Lighting Technologies Cross Reference ULT Inventory Nbr Model Description 7811649C 7811649D 7811648C 7811648D 7811647C 7811647D 7811646C 7811646D 7811652C 7811652D 7811651C 7811651D 7811650C 7811650D 7811057 ES-1-2D-16/10-UNV-C ES-1-2D-16/10-UNV-D


    Original     		7811649C 7811649D 7811648C 7811648D 7811647C 7811647D 7811646C 7811646D 7811652C 7811652D ES-2-CFQ-26-120-H-S-DIM-E ES-2-CFT-39-120-F-LG ES-1-2D-38-UNV-D ES-1-T8-32-120-A-S-1 ES-1-CFT-39-120-A-S-DIM-E ES-2-T8-32-347-A-S B228PUNV-C ES-1-CFT-40-UNV-A C2642UNVBES ES-2-T8-25-120-A-S-DIM-E PDF

    s-band 50 Watt solid state power amplifier high p

    Abstract: AN1038 application hybrid coupler 3dB 180 TRANS7 hf combiners AN1032 AN1038 NES2427P-60 150 watt amplifier advantages and disadvantages power combiner 4 watt VHF
    Text: California Eastern Laboratories APPLICATION NOTE AN1038 A 70-W S-Band Amplifier For MMDS & Wireless Data/Internet Applications Shansong Song and Raymond Basset California Eastern Laboratories, Inc 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 DESIGN CHALLENGES


    Original     		AN1038 ato50 60-Watt s-band 50 Watt solid state power amplifier high p AN1038 application hybrid coupler 3dB 180 TRANS7 hf combiners AN1032 AN1038 NES2427P-60 150 watt amplifier advantages and disadvantages power combiner 4 watt VHF PDF

    AN1032

    Abstract: NES2427P-140 transistor a 1837
    Text: PRELIMINARY DATA SHEET 140 W S-BAND TWIN POWER GaAs MESFET NES2427P-140 OUTLINE DIMENSIONS Units in mm FEATURES • • • • HIGH OUTPUT POWER: 140 W TYP HIGH LINEAR GAIN: 9.5 dB TYP HIGH EFFICIENCY: 41% TYP USABLE IN BALANCED OR PUSH-PULL CONFIGURATION.


    Original     		NES2427P-140 NES2427P-140 24-Hour AN1032 transistor a 1837 PDF

    fluorescent lamp starter

    Abstract: working of fused tube light using diodes 36 led lamp 230v circuit diagram circuit diagram electronic ballast for 36W tube capacitor discharge ignition scr led lamp 230v circuit diagram circuit diagram electronic ballast for 18W 4 pin Electronic ballast 58W Fluorescent BALLAST low loss ELECTRONIC BALLAST 18W SCHEMATIC
    Text: EFS  STARLIGHT-KIT 2-CHIPS SET Application Specific Discretes FOR FLUORESCENT LAMP STARTER A.S.D. FEATURES n n n n n n n VERY WIDE TEMPERATURE RANGE: tube ignition from - 30 to + 85 °C SINGLE SHOT IGNITION FROM -30 to 0°C : 350mA, 1350V striking pulse


    Original     		350mA, 50/60Hz SO-14 fluorescent lamp starter working of fused tube light using diodes 36 led lamp 230v circuit diagram circuit diagram electronic ballast for 36W tube capacitor discharge ignition scr led lamp 230v circuit diagram circuit diagram electronic ballast for 18W 4 pin Electronic ballast 58W Fluorescent BALLAST low loss ELECTRONIC BALLAST 18W SCHEMATIC PDF

    arcotronics 402 series capacitors

    Abstract: arcotronics tantalum vishay cross 5910-99-014 arcotronics C3306 402 arcotronics
    Text: Series ANP2 Vishay Wet Tantalum Capacitor, Button, All-Tantalum Case, Non-Polar, - 55 °C to + 125 °C Operation FEATURES • All-Tantalum electrodes eliminate silver migration • Withstands high ripple current • Long life reliability • Non-polar design


    Original     		18-Jul-08 arcotronics 402 series capacitors arcotronics tantalum vishay cross 5910-99-014 arcotronics C3306 402 arcotronics PDF

    IEC155

    Abstract: electronic starter 35seconds
    Text: ÖKO 2 Product Information Electronic starter for 4-22W single or twin series fluorescent lamp circuits. The soft start system utilised in the ÖKO 2 electronic starter first pre-heats the lamp cathodes to working temperature, before applying a controlled voltage pulse to strike the


    Original     		0-20W T8/T12 IEC155 electronic starter 35seconds PDF

    pneumatic shock absorber

    Abstract: festo piston air cylinder festo YSR-12-12-C 32721 SPZ-20-50-P-A YSRA-12-C festo S6 38 magnetic sensor festo
    Text: FESTO Guide and linear units for contactless sensing, piston dia. 10 to 32 mm PNEUMATIC Linear unit with two piston rods, slide bearing guide and elastic end piston cushioning rings, secured against rotation. Traversing slide with two piston rods Type SPZ-.-P-A


    OCR Scan     		YSRA-12-C YSR-12-12-C pneumatic shock absorber festo piston air cylinder festo YSR-12-12-C 32721 SPZ-20-50-P-A YSRA-12-C festo S6 38 magnetic sensor festo PDF

    T50 thyristor

    Abstract: No abstract text available
    Text: nixYS High Voltage Thyristor Module MCC94 ITRMS TAVM = 2x180 A = 2x104 A V RRM = 2000/2200 V v RSM v RRM VDSM V DRM V 671 Type 54 2 TO-240 AA V 2100 2300 2000 2200 Symbol MCC 94-20ÌO1 B MCC 94-22io1 B Test Conditions Maximum Ratings TVJ "^"vjM T0 = 85°C; 180° sine


    OCR Scan     		MCC94 2x180 2x104 O-240 94-22io1 T50 thyristor PDF

    Untitled

    Abstract: No abstract text available
    Text: 4bflb55b 00Glb73 Mfl3 H I X Y n ix Y S Thyristor Modules Thyristor/Diode Modules V mn V mm V Vmm Vow V 500 700 900 1300 1500 1700 1900 400 600 800 1200 1400 1600 1800* MCC95 MCD95 iTAV= 2 x 116 A VRRM= 400-1800 v Type Version 1 B MCC95-06ÌO1 MCC95~08io1 MCC95-12I01


    OCR Scan     		4bflb55b 00Glb73 MCC95 MCD95 MCC95-06Ã MCC95 08io1 MCC95-12I01 MCC95-14401 MCC95-16Ã PDF

    LT 220 diode

    Abstract: No abstract text available
    Text: nixYS ' !. :-u r’ Thyristor Modules Thyristor/Diode Modules MCC 220 MCD 220 ^TRMS ^TAVM = 2 x 400 A = 2 x 250 A V RRM = 800 -1600 V v RSM V RRM v DSM v DRM V V Version 1 Version 1 900 1300 1500 1700 800 1200 1400 1600 MCC 220-08ÌO1 MCC 220-12io1 MCC 220-14io1


    OCR Scan     		220-12io1 220-14io1 220-16io1 4bflb22b LT 220 diode PDF