Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    LICON SWITCH Search Results

    LICON SWITCH Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    HN1D05FE Toshiba Electronic Devices & Storage Corporation Switching Diode, 400 V, 0.1 A, ES6 Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    DG301AAA Rochester Electronics DG301AAA - CMOS Analog Switch Visit Rochester Electronics Buy
    ICL7660SMTV Rochester Electronics LLC Switched Capacitor Converter, 0.02A, 17.5kHz Switching Freq-Max, CMOS, MBCY8, PACKAGE-8 Visit Rochester Electronics LLC Buy

    LICON SWITCH Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    snap on tools for electronic

    Abstract: 19n50 MIL-PRF-8805 MS27257-1 licon switch 19N920
    Text: TABLE OF CONTENTS LICON — SNAP ACTION SWITCHES Table Of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ii – iii Series 11: Miniature 10 amp Double-Break . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46 – 47


    Original
    PDF

    FMPG2F

    Abstract: zener diode reference guide diode MARKING 30J MICROWAVE OVEN HIGH VOLTAGE RECTIFIER DIODE - HVR diode hvr 1x FMB-34M sot23 3F mark fmlg12 RBV SOT23 marking code RBV SOT23
    Text: Bulletin No. D01ED0 Oct., 2000 SI LICON DIODES SILICON VARISTORS CAUTION / WARNING The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Sanken reserves the right to make changes without further notice to any products herein in


    Original
    PDF D01ED0 SFPJ-63 VR-60SS SFPJ-73 VR-61SS SFPL-52 SFPL-62 SFPM-52 FMPG2F zener diode reference guide diode MARKING 30J MICROWAVE OVEN HIGH VOLTAGE RECTIFIER DIODE - HVR diode hvr 1x FMB-34M sot23 3F mark fmlg12 RBV SOT23 marking code RBV SOT23

    adaptive algorithm dpd

    Abstract: virtex GTH xilinx digital Pre-distortion DSP48E1 SX475T FPGA Virtex 6 Ethernet Virtex 6 3G-SDI serializer 6.25G interlaken network processor
    Text: FPGA FAMILY virtex-6 FPGAs Th e H ig h-Pe r for mance Prog ram mab le Si licon Fou n dation for Targ ete d Desig n Platfor ms Satisfying the Insatiable Demand for Higher Bandwidth The Programmable Imperative The High-Performance Silicon Foundation • Competitive forces are driving


    Original
    PDF

    dc-dc-converter

    Abstract: 2SC3309
    Text: 2SC3309 SI LICON NPN TRIPLE DIFFUSED TYPE INDUSTRIAL APPLICATIONS Unit in mm SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. - - ; • ' HIGH SPEED DC-DC-CONVERTER APPLICATION. FEATURES : . Excellent Switching Times tr= l .O/js CMax. , tf=l.O^s Max.)


    OCR Scan
    PDF 2SC3309 a76-ai5 80/Me dc-dc-converter 2SC3309

    st 2n2907 to-18

    Abstract: P008B 2N2904 2n2905 ST
    Text: SGS-THOMSON RaDSMULKEin^OMlDei 2N2904/2N2905 2N2906/2N2907 GENERAL PURPOSE AMPLIFIERS AND SWITCHES D E S C R IP T IO N The 2N2904, 2N2905, 2N2906 and 2N2907 are si­ licon planar epitaxial PNP transistors in Jedec TO39 for 2N2904, 2N2905 and in Jedec TO-18 (for


    OCR Scan
    PDF 2N2904, 2N2905, 2N2906 2N2907 2N2905) 2N2907) 2N2904/2N2905 2N2906/2N2907 st 2n2907 to-18 P008B 2N2904 2n2905 ST

    mil-s-8805

    Abstract: MS21321-1 MS27240-1 MS21321 ms27240-4 MS27240-2 MS24331 ms24420-1 8805 switch MS27240-3
    Text: type 62 and 63 Sealed sw itches Description The Licon Type 63 Series is an environment-free sealed switch designed for rugged duty and to conform to the rigid specifications of military and standard designs. A one piece housing with "0" ring seals at the plunger and


    OCR Scan
    PDF MIL-S8805 MS24420-1 MS24420-2 MS24420-3 MS24420-4 MS24420-5 MIL-S-8805/49 mil-s-8805 MS21321-1 MS27240-1 MS21321 ms27240-4 MS27240-2 MS24331 8805 switch MS27240-3

    Untitled

    Abstract: No abstract text available
    Text: f Z 7 SCS-THOMSON ^7# MJE13006 MJE13007/A [» ^ iy iO T ® K S MOTOR CONTROL, SWITCH REGULATORS DESCRIPTION The MJE13006, MJE13007 and MJE13007A are si­ licon multiepitaxial mesa NPN transistors. They are mounted in Jedec TO-220 plastic package, inten­


    OCR Scan
    PDF MJE13006 MJE13007/A MJE13006, MJE13007 MJE13007A O-220 JE13007A 2N5191, JE13006-M JE13007-M

    BD243

    Abstract: No abstract text available
    Text: r z 7 SGS-THOMSON ^7# BD243/A/B/C BD244/A/B/C POWER LINEAR AND SWITCHING APPLICATIONS DESCRIPTION The BD243, BD243A, BD243B and BD243C are si­ licon epitaxial-base NPN power transistors in Jedec TO-220 plastic package, intended for use in medium power linear and switching applications.


    OCR Scan
    PDF BD243/A/B/C BD244/A/B/C BD243, BD243A, BD243B BD243C O-220 BD244, BD244A, BD244B BD243

    Untitled

    Abstract: No abstract text available
    Text: FI 73232J7 D D gqiO q g • ^ 3 SGS-THOMSON «[B miOT KS 3 - MJE13006 MJE13007/A S G S-THOMSON 3GE D MOTOR CONTROL, SWITCH REGULATORS DESC RIPTIO N The MJE13006, MJE13007 and MJE13007Aare si­ licon multiepitaxial mesa NPN transistors. They are mounted in Jedec TO-220 plastic package, inten­


    OCR Scan
    PDF 73232J7 MJE13006 MJE13007/A MJE13006, MJE13007 MJE13007Aare O-220 MJE13007A MJE13006 7T2T237

    2n4033

    Abstract: No abstract text available
    Text: 30E D • 7^237 GQ312D7 fi ■ SGS-THOMSON ~T'37-l5 2N4030-2N4031 2N 4032-2N 4033 S G S-THOMSON GENERAL PURPOSE AMPLIFIERS AND SWITCHES DESCRIPTION The 2N4030,2N4031, 2N4032, and 2N4033 are si­ licon planar epitaxial PNP transistors in Jedec TO-39 metal case primarily intended for large signal,


    OCR Scan
    PDF GQ312D7 37-l5 2N4030-2N4031 4032-2N 2N4030 2N4031, 2N4032, 2N4033 2N4030 2N4032

    Untitled

    Abstract: No abstract text available
    Text: 7 ^ 5 3 7 oosaagg b • n " - 3 3 -Q °| SCS-THOMSON •mera «« SJ3 BD239/A/B/C BD240/A/B/C S-THOMSON 3GE I> MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS DESCRIPTION The BD239, BD239A, BD239B and BD239C are si­ licon epitaxial-base NPN power transistors in Jedec


    OCR Scan
    PDF BD239/A/B/C BD240/A/B/C BD239, BD239A, BD239B BD239C O-220 BD240, BD240A, BD240B

    2sa1329

    Abstract: 2SC3346 AC75
    Text: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA St d !T| T C H TSSO 0 0 D 7 3 n CDISCRETE/O P T O SI LICON PNP EP IT A X IA L T Y P E PCT PROCESS) Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. 1013MAX. 03.6=0:2 LIT FEATURES : . Low Collector Saturation Voltage


    OCR Scan
    PDF 00D73n 2SC3346 X300X2mm X100X3mmAÂ 50X50X2mm 2sa1329 2SC3346 AC75

    T1P32

    Abstract: bd241 42bb
    Text: f Z 7 SGS-THOMSON BD241/A/B/C BD242/A/B/C ^7# MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS D E S C R IP T IO N The BD241, BD241 A, BD241B and BD241C are si­ licon epitaxial-base NPN power transistors in Jedec TCi-220 plastic package, intended for use in medium


    OCR Scan
    PDF BD241/A/B/C BD242/A/B/C BD241, BD241 BD241B BD241C TCi-220 BD242, BD242A, BD242B T1P32 42bb

    d239ab

    Abstract: CS696 bd240c D239 D239B d240a D239 PNP
    Text: rZ Z SG S -TH O M SO N B D239/A /B /C B D 240/A /B /C ^7# MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS D E S C R IP T IO N The BD239, BD239A, BD239B and BD239C are si­ licon epitaxial-base NPN power transistors in Jedec TO-220 plastic package, intended for use in medium


    OCR Scan
    PDF D239/A 240/A BD239, BD239A, BD239B BD239C O-220 BD240, BD240A, BD240B d239ab CS696 bd240c D239 D239B d240a D239 PNP

    TU 55x

    Abstract: 2SB677 AC75 ICH755
    Text: TOSHIBA Tt, {DISCRETE/OPTO} T| TQTTSSO m 0007342 S !T L 5 6C 07 3 ^2 CD I S C R E T E / O P T O D^ T-33-31 SI LICON PNP E P IT A X IA L T YPE PCT PRO CESS) _ (D A R L IN G T O N POWER)_ INDUSTRIAL APPLICATIONS Unit in mm SWITCHING APPLICATIONS.


    OCR Scan
    PDF T-33-31 2SB677 X300X 100X100X2 60X50X0 TU 55x 2SB677 AC75 ICH755

    ZTX453

    Abstract: ZTX 15 Ferranti Semiconductors ZT Ferranti ZTX452 ferranti NPN Silicon Planar Medium Power Transistors ZTX 452 ZTX 453
    Text: FERRANTI i semiconductors ZTX452 ZTX453 NPN Si licon Planar M e d i u m P o w e r Transistors FEATURES • High power dissipation: 1W at Tamb = 25‘C. • hFE specified up to 1 amp. • High V CEO up to 100 volts. GENERAL DESCRIPTION These are plastic encapsulated, general purpose transis­


    OCR Scan
    PDF ZTX452 ZTX453 ZTX453 ZTX 15 Ferranti Semiconductors ZT Ferranti ferranti NPN Silicon Planar Medium Power Transistors ZTX 452 ZTX 453

    Untitled

    Abstract: No abstract text available
    Text: 7 1 5 ^ 5 3 7 QOSflMOl Q • 31» ' 1 SGS-THOMSON BD241/A/B/C BD242/A/B/C I(L[1CT[^cq [R0D S S_fi S - T H O M S O N 3QE D MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS DESCRIPTION The BD241, BD241A, BD241B and BD241C are si­ licon epitaxial-base NPN power transistors in Jedec


    OCR Scan
    PDF BD241/A/B/C BD242/A/B/C BD241, BD241A, BD241B BD241C O-220 BD242, BD242A, BD242B

    2n h 2222

    Abstract: No abstract text available
    Text: 3QE D • 7^237 0031113 T ■ S C S -T H O M S O N UOTM W i ^T-3>S-f3 2N 2218-2N 2219 2N 2221-2N 2222 S G S-TH0MS0N HIGH-SPEED SWITCHES DESCRIPTION The 2N2218, 2N2219, 2N2221 and 2N2222 are si­ licon planar epitaxial NPN transistors in Jedec TO-39 for 2N2218 and 2N2219 and in Jedec


    OCR Scan
    PDF 2218-2N 2221-2N 2N2218, 2N2219, 2N2221 2N2222 2N2218 2N2219) 2N2222) 2n h 2222

    713 OPTO

    Abstract: TRANSISTOR Q35
    Text: TOSHIBA -CDISCRETE/OPTOJ 9097250 TOSHIBA Sb DE i C H T S S a OGDflODfl 1 | ~ 56C 080(38 <D IS C R E T E / O P T O D' T-39-11 SI LICON N CHANNEL-MQS TYPE (7T-M0S) IN D U ST R IA L ,A PPLIC A TIO N S U n it i n mm HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS.SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR


    OCR Scan
    PDF 100nA lll1ftlllllllll11tlllllL111 lllll111il 713 OPTO TRANSISTOR Q35

    3713

    Abstract: No abstract text available
    Text: 7 ^ 5 3 7 0 0 5 ^ 3 SCS-THOMSON •LEOT «! S 6 b ■ 3 V i3 > 2N3713/14/15/16 2N3789/90/91/92 S-TH0MS0N 30E T> EPITAXIAL-BASE NPN/PNP DESC RIPTIO N The 2N3713, 2N3714, 2N3715 and 2N3716 are si­ licon epitaxial-base NPN power transistors in Jedec TO-3 metal case. They are intended for use in po­


    OCR Scan
    PDF 2N3713/14/15/16 2N3789/90/91/92 2N3713, 2N3714, 2N3715 2N3716 2N3789, 2N3790, 2N3791 2N3792 3713

    131S

    Abstract: 2N3026 15149 sdt8004 SDT7413 SDT7414 SDT7415 SDT7416 SDT7417 SDT7418
    Text: 25 SILICON POWER TRANSISTORS SATU RA TIO N V O LTA G E S C U R R E N T GAIN TYPE NUM BER CASE T YP E V CEO V CBO V 1 V V EBO V hFE MIN. I M AX. V CE v I 'c V CE s A v V BE(s> ! 'c V A I 'b A 5 AMP Sl LICON NPN SDT7413 SDT7414 SDT7415 TO-5 TO-5 TO-5 100 60


    OCR Scan
    PDF sdt7413 sdt7414 sdt7415 sdt7416 sdt7417 sdt7418 sdt7419 sdt9001 sdt9002 sdt9003 131S 2N3026 15149 sdt8004

    TIP29 RCA

    Abstract: RCA TIP30
    Text: HARRIS SEMICOND SECTOR SbE D • 43G2E71 0040^42 b^ö W H A S TIP30, TIP30A, TIP30B, TIP30C File Number 988 7=3^7? Epitaxial-Base, Silicon P-N-P VERSAWATT Transistors For Power-Amplifier and High-Speed-Switching Applications F e a tu re s : ■ ■ u ■ 30 W at 25°C case temperature


    OCR Scan
    PDF 43G2E71 TIP30, TIP30A, TIP30B, TIP30C TIP29-series RCA-TIP30, TIP30C TIP29 RCA RCA TIP30

    BD139

    Abstract: transistor BD 139 BD 139 transistor BD139-6 BD 139 N BD 139-16 transistor bd 242 bd 3055 BD139 amplifier BD NPN transistors
    Text: BD 139 NPIM-EPITAXIAL-PLANAR-SILICON-TRANSISTOR • • • • • Driver fo r Audio A m plifier Active Convergenz Regulators Power Switching Pt o t = 6.5 W at T g = 60 oc • hFE > 40 at !C = - 1 5 0 mA • VcE sat < - 0 .5 V at lc = - 0 .5 A mechanical data


    OCR Scan
    PDF BD139 40PEP 80PEP OT-32 OT-32 O-66P BD139 transistor BD 139 BD 139 transistor BD139-6 BD 139 N BD 139-16 transistor bd 242 bd 3055 BD139 amplifier BD NPN transistors

    IN5711

    Abstract: melf Schottky glass jan In5711 SCHOTTKY DIODE SOD-80 JANTX
    Text: SCHOTTKY BARRIER DIODES metelics FOR GENERAL PURPOSE APPLICATIONS CORPORATION FEATURES • High Breakdown Voltage to 70 Volts • Available in Chips, Glass Package Or Double Slug Melf Package • 1N5711 Available in JAN, JANTX and JANTXV • Packages Metallurgical^ Bonded


    OCR Scan
    PDF 1N5711 CD5711 CD5712 CD2810 DSB5712 DSB2810 CDLL5711 CDLL5712 CDLL2810 IN5711 melf Schottky glass jan In5711 SCHOTTKY DIODE SOD-80 JANTX