snap on tools for electronic
Abstract: 19n50 MIL-PRF-8805 MS27257-1 licon switch 19N920
Text: TABLE OF CONTENTS LICON — SNAP ACTION SWITCHES Table Of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ii – iii Series 11: Miniature 10 amp Double-Break . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46 – 47
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FMPG2F
Abstract: zener diode reference guide diode MARKING 30J MICROWAVE OVEN HIGH VOLTAGE RECTIFIER DIODE - HVR diode hvr 1x FMB-34M sot23 3F mark fmlg12 RBV SOT23 marking code RBV SOT23
Text: Bulletin No. D01ED0 Oct., 2000 SI LICON DIODES SILICON VARISTORS CAUTION / WARNING The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Sanken reserves the right to make changes without further notice to any products herein in
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D01ED0
SFPJ-63
VR-60SS
SFPJ-73
VR-61SS
SFPL-52
SFPL-62
SFPM-52
FMPG2F
zener diode reference guide
diode MARKING 30J
MICROWAVE OVEN HIGH VOLTAGE RECTIFIER DIODE - HVR
diode hvr 1x
FMB-34M
sot23 3F mark
fmlg12
RBV SOT23
marking code RBV SOT23
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adaptive algorithm dpd
Abstract: virtex GTH xilinx digital Pre-distortion DSP48E1 SX475T FPGA Virtex 6 Ethernet Virtex 6 3G-SDI serializer 6.25G interlaken network processor
Text: FPGA FAMILY virtex-6 FPGAs Th e H ig h-Pe r for mance Prog ram mab le Si licon Fou n dation for Targ ete d Desig n Platfor ms Satisfying the Insatiable Demand for Higher Bandwidth The Programmable Imperative The High-Performance Silicon Foundation • Competitive forces are driving
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dc-dc-converter
Abstract: 2SC3309
Text: 2SC3309 SI LICON NPN TRIPLE DIFFUSED TYPE INDUSTRIAL APPLICATIONS Unit in mm SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. - - ; • ' HIGH SPEED DC-DC-CONVERTER APPLICATION. FEATURES : . Excellent Switching Times tr= l .O/js CMax. , tf=l.O^s Max.)
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2SC3309
a76-ai5
80/Me
dc-dc-converter
2SC3309
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st 2n2907 to-18
Abstract: P008B 2N2904 2n2905 ST
Text: SGS-THOMSON RaDSMULKEin^OMlDei 2N2904/2N2905 2N2906/2N2907 GENERAL PURPOSE AMPLIFIERS AND SWITCHES D E S C R IP T IO N The 2N2904, 2N2905, 2N2906 and 2N2907 are si licon planar epitaxial PNP transistors in Jedec TO39 for 2N2904, 2N2905 and in Jedec TO-18 (for
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2N2904,
2N2905,
2N2906
2N2907
2N2905)
2N2907)
2N2904/2N2905
2N2906/2N2907
st 2n2907 to-18
P008B
2N2904
2n2905 ST
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mil-s-8805
Abstract: MS21321-1 MS27240-1 MS21321 ms27240-4 MS27240-2 MS24331 ms24420-1 8805 switch MS27240-3
Text: type 62 and 63 Sealed sw itches Description The Licon Type 63 Series is an environment-free sealed switch designed for rugged duty and to conform to the rigid specifications of military and standard designs. A one piece housing with "0" ring seals at the plunger and
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MIL-S8805
MS24420-1
MS24420-2
MS24420-3
MS24420-4
MS24420-5
MIL-S-8805/49
mil-s-8805
MS21321-1
MS27240-1
MS21321
ms27240-4
MS27240-2
MS24331
8805 switch
MS27240-3
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Untitled
Abstract: No abstract text available
Text: f Z 7 SCS-THOMSON ^7# MJE13006 MJE13007/A [» ^ iy iO T ® K S MOTOR CONTROL, SWITCH REGULATORS DESCRIPTION The MJE13006, MJE13007 and MJE13007A are si licon multiepitaxial mesa NPN transistors. They are mounted in Jedec TO-220 plastic package, inten
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MJE13006
MJE13007/A
MJE13006,
MJE13007
MJE13007A
O-220
JE13007A
2N5191,
JE13006-M
JE13007-M
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BD243
Abstract: No abstract text available
Text: r z 7 SGS-THOMSON ^7# BD243/A/B/C BD244/A/B/C POWER LINEAR AND SWITCHING APPLICATIONS DESCRIPTION The BD243, BD243A, BD243B and BD243C are si licon epitaxial-base NPN power transistors in Jedec TO-220 plastic package, intended for use in medium power linear and switching applications.
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BD243/A/B/C
BD244/A/B/C
BD243,
BD243A,
BD243B
BD243C
O-220
BD244,
BD244A,
BD244B
BD243
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Untitled
Abstract: No abstract text available
Text: FI 73232J7 D D gqiO q g • ^ 3 SGS-THOMSON «[B miOT KS 3 - MJE13006 MJE13007/A S G S-THOMSON 3GE D MOTOR CONTROL, SWITCH REGULATORS DESC RIPTIO N The MJE13006, MJE13007 and MJE13007Aare si licon multiepitaxial mesa NPN transistors. They are mounted in Jedec TO-220 plastic package, inten
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73232J7
MJE13006
MJE13007/A
MJE13006,
MJE13007
MJE13007Aare
O-220
MJE13007A
MJE13006
7T2T237
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2n4033
Abstract: No abstract text available
Text: 30E D • 7^237 GQ312D7 fi ■ SGS-THOMSON ~T'37-l5 2N4030-2N4031 2N 4032-2N 4033 S G S-THOMSON GENERAL PURPOSE AMPLIFIERS AND SWITCHES DESCRIPTION The 2N4030,2N4031, 2N4032, and 2N4033 are si licon planar epitaxial PNP transistors in Jedec TO-39 metal case primarily intended for large signal,
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GQ312D7
37-l5
2N4030-2N4031
4032-2N
2N4030
2N4031,
2N4032,
2N4033
2N4030
2N4032
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Untitled
Abstract: No abstract text available
Text: 7 ^ 5 3 7 oosaagg b • n " - 3 3 -Q °| SCS-THOMSON •mera «« SJ3 BD239/A/B/C BD240/A/B/C S-THOMSON 3GE I> MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS DESCRIPTION The BD239, BD239A, BD239B and BD239C are si licon epitaxial-base NPN power transistors in Jedec
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BD239/A/B/C
BD240/A/B/C
BD239,
BD239A,
BD239B
BD239C
O-220
BD240,
BD240A,
BD240B
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2sa1329
Abstract: 2SC3346 AC75
Text: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA St d !T| T C H TSSO 0 0 D 7 3 n CDISCRETE/O P T O SI LICON PNP EP IT A X IA L T Y P E PCT PROCESS) Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. 1013MAX. 03.6=0:2 LIT FEATURES : . Low Collector Saturation Voltage
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00D73n
2SC3346
X300X2mm
X100X3mmAÂ
50X50X2mm
2sa1329
2SC3346
AC75
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T1P32
Abstract: bd241 42bb
Text: f Z 7 SGS-THOMSON BD241/A/B/C BD242/A/B/C ^7# MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS D E S C R IP T IO N The BD241, BD241 A, BD241B and BD241C are si licon epitaxial-base NPN power transistors in Jedec TCi-220 plastic package, intended for use in medium
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BD241/A/B/C
BD242/A/B/C
BD241,
BD241
BD241B
BD241C
TCi-220
BD242,
BD242A,
BD242B
T1P32
42bb
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d239ab
Abstract: CS696 bd240c D239 D239B d240a D239 PNP
Text: rZ Z SG S -TH O M SO N B D239/A /B /C B D 240/A /B /C ^7# MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS D E S C R IP T IO N The BD239, BD239A, BD239B and BD239C are si licon epitaxial-base NPN power transistors in Jedec TO-220 plastic package, intended for use in medium
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D239/A
240/A
BD239,
BD239A,
BD239B
BD239C
O-220
BD240,
BD240A,
BD240B
d239ab
CS696
bd240c
D239
D239B
d240a
D239 PNP
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TU 55x
Abstract: 2SB677 AC75 ICH755
Text: TOSHIBA Tt, {DISCRETE/OPTO} T| TQTTSSO m 0007342 S !T L 5 6C 07 3 ^2 CD I S C R E T E / O P T O D^ T-33-31 SI LICON PNP E P IT A X IA L T YPE PCT PRO CESS) _ (D A R L IN G T O N POWER)_ INDUSTRIAL APPLICATIONS Unit in mm SWITCHING APPLICATIONS.
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T-33-31
2SB677
X300X
100X100X2
60X50X0
TU 55x
2SB677
AC75
ICH755
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ZTX453
Abstract: ZTX 15 Ferranti Semiconductors ZT Ferranti ZTX452 ferranti NPN Silicon Planar Medium Power Transistors ZTX 452 ZTX 453
Text: FERRANTI i semiconductors ZTX452 ZTX453 NPN Si licon Planar M e d i u m P o w e r Transistors FEATURES • High power dissipation: 1W at Tamb = 25‘C. • hFE specified up to 1 amp. • High V CEO up to 100 volts. GENERAL DESCRIPTION These are plastic encapsulated, general purpose transis
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ZTX452
ZTX453
ZTX453
ZTX 15
Ferranti Semiconductors
ZT Ferranti
ferranti
NPN Silicon Planar Medium Power Transistors ZTX 452 ZTX 453
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Untitled
Abstract: No abstract text available
Text: 7 1 5 ^ 5 3 7 QOSflMOl Q • 31» ' 1 SGS-THOMSON BD241/A/B/C BD242/A/B/C I(L[1CT[^cq [R0D S S_fi S - T H O M S O N 3QE D MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS DESCRIPTION The BD241, BD241A, BD241B and BD241C are si licon epitaxial-base NPN power transistors in Jedec
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BD241/A/B/C
BD242/A/B/C
BD241,
BD241A,
BD241B
BD241C
O-220
BD242,
BD242A,
BD242B
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2n h 2222
Abstract: No abstract text available
Text: 3QE D • 7^237 0031113 T ■ S C S -T H O M S O N UOTM W i ^T-3>S-f3 2N 2218-2N 2219 2N 2221-2N 2222 S G S-TH0MS0N HIGH-SPEED SWITCHES DESCRIPTION The 2N2218, 2N2219, 2N2221 and 2N2222 are si licon planar epitaxial NPN transistors in Jedec TO-39 for 2N2218 and 2N2219 and in Jedec
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2218-2N
2221-2N
2N2218,
2N2219,
2N2221
2N2222
2N2218
2N2219)
2N2222)
2n h 2222
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713 OPTO
Abstract: TRANSISTOR Q35
Text: TOSHIBA -CDISCRETE/OPTOJ 9097250 TOSHIBA Sb DE i C H T S S a OGDflODfl 1 | ~ 56C 080(38 <D IS C R E T E / O P T O D' T-39-11 SI LICON N CHANNEL-MQS TYPE (7T-M0S) IN D U ST R IA L ,A PPLIC A TIO N S U n it i n mm HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS.SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR
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100nA
lll1ftlllllllll11tlllllL111
lllll111il
713 OPTO
TRANSISTOR Q35
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3713
Abstract: No abstract text available
Text: 7 ^ 5 3 7 0 0 5 ^ 3 SCS-THOMSON •LEOT «! S 6 b ■ 3 V i3 > 2N3713/14/15/16 2N3789/90/91/92 S-TH0MS0N 30E T> EPITAXIAL-BASE NPN/PNP DESC RIPTIO N The 2N3713, 2N3714, 2N3715 and 2N3716 are si licon epitaxial-base NPN power transistors in Jedec TO-3 metal case. They are intended for use in po
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2N3713/14/15/16
2N3789/90/91/92
2N3713,
2N3714,
2N3715
2N3716
2N3789,
2N3790,
2N3791
2N3792
3713
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131S
Abstract: 2N3026 15149 sdt8004 SDT7413 SDT7414 SDT7415 SDT7416 SDT7417 SDT7418
Text: 25 SILICON POWER TRANSISTORS SATU RA TIO N V O LTA G E S C U R R E N T GAIN TYPE NUM BER CASE T YP E V CEO V CBO V 1 V V EBO V hFE MIN. I M AX. V CE v I 'c V CE s A v V BE(s> ! 'c V A I 'b A 5 AMP Sl LICON NPN SDT7413 SDT7414 SDT7415 TO-5 TO-5 TO-5 100 60
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sdt7413
sdt7414
sdt7415
sdt7416
sdt7417
sdt7418
sdt7419
sdt9001
sdt9002
sdt9003
131S
2N3026
15149
sdt8004
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TIP29 RCA
Abstract: RCA TIP30
Text: HARRIS SEMICOND SECTOR SbE D • 43G2E71 0040^42 b^ö W H A S TIP30, TIP30A, TIP30B, TIP30C File Number 988 7=3^7? Epitaxial-Base, Silicon P-N-P VERSAWATT Transistors For Power-Amplifier and High-Speed-Switching Applications F e a tu re s : ■ ■ u ■ 30 W at 25°C case temperature
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43G2E71
TIP30,
TIP30A,
TIP30B,
TIP30C
TIP29-series
RCA-TIP30,
TIP30C
TIP29 RCA
RCA TIP30
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BD139
Abstract: transistor BD 139 BD 139 transistor BD139-6 BD 139 N BD 139-16 transistor bd 242 bd 3055 BD139 amplifier BD NPN transistors
Text: BD 139 NPIM-EPITAXIAL-PLANAR-SILICON-TRANSISTOR • • • • • Driver fo r Audio A m plifier Active Convergenz Regulators Power Switching Pt o t = 6.5 W at T g = 60 oc • hFE > 40 at !C = - 1 5 0 mA • VcE sat < - 0 .5 V at lc = - 0 .5 A mechanical data
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BD139
40PEP
80PEP
OT-32
OT-32
O-66P
BD139
transistor BD 139
BD 139 transistor
BD139-6
BD 139 N
BD 139-16
transistor bd 242
bd 3055
BD139 amplifier
BD NPN transistors
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IN5711
Abstract: melf Schottky glass jan In5711 SCHOTTKY DIODE SOD-80 JANTX
Text: SCHOTTKY BARRIER DIODES metelics FOR GENERAL PURPOSE APPLICATIONS CORPORATION FEATURES • High Breakdown Voltage to 70 Volts • Available in Chips, Glass Package Or Double Slug Melf Package • 1N5711 Available in JAN, JANTX and JANTXV • Packages Metallurgical^ Bonded
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1N5711
CD5711
CD5712
CD2810
DSB5712
DSB2810
CDLL5711
CDLL5712
CDLL2810
IN5711
melf Schottky glass
jan In5711
SCHOTTKY DIODE SOD-80 JANTX
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