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Catalog Datasheet	MFG & Type	Document Tags	PDF
mn4117405 Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51 Text: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE	Original	CP005-1F IS89C51 Z16C02 Z86E30 ZZ16C03 Z8036 Z8536 Z8038 Z5380 Z53C80 mn4117405 NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51	PDF
UM61256AK-15 Abstract: UM61256ak sram um61256ck-20 HY62256ALP10 XL93LC46AP w24m257 GVT7164D32Q-6 km62256blg-7 w24m257ak-15 UM61256 Text: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM FLASH MICROCONTROLLER SERIAL FLASH JULY 1998 Integrated Silicon Solution, Inc. CP005-1E 7/1/98 1 ISSI CROSS REFERENCE GUIDE	Original	CP005-1E AS7C1024-12JC AS7C1024-12PC AS7C1024-12TJC AS7C1024-12TPC AS7C1024-15JC AS7C1024-15PC AS7C1024-15TJC AS7C1024-15TPC AS7C1024-20JC UM61256AK-15 UM61256ak sram um61256ck-20 HY62256ALP10 XL93LC46AP w24m257 GVT7164D32Q-6 km62256blg-7 w24m257ak-15 UM61256	PDF
IR3Y29B Abstract: ir3y26a1 IR4N IR3T24N IR3C08N ir2c53 ir2c05 li3301 IR3Y08 IR2E02 Text: Index Model No. IR3T ARM710 ARM7DI ARM7DM ARM7TDMI ARM7TDMI-SPL ARM8 ARM810 CMOS CMOS CMOS CMOS F series G series J series K series ID22 series ID222XX ID223XX ID224XX ID226XX ID227XX ID229XX ID22DXX ID22FXX ID22HXX ID240 series ID240DXX ID240EXX ID240GXX	OCR Scan	ARM710 ARM810 IR3T24 IR3T24N IR3Y05Y IR3Y08 IR3Y12B IR3Y18A IR3Y21 IR3Y26A IR3Y29B ir3y26a1 IR4N IR3T24N IR3C08N ir2c53 ir2c05 li3301 IR2E02	PDF
Untitled Abstract: No abstract text available Text: MEMORIES Low voltage operation Bit Capacity configuration 16 k 64k x8 x8 ★ Access time Supply current ns MAX. Cycle time Operating Standby (ns) MIN. (mA) MAX. (mA) MAX. Model No. LH5116SN x8 x8 1M x 16 2M x 16 1 5 *7 Supply Operating voltage temp. (V)	OCR Scan	24SOP LH5116SN LH5164AVN/AVT LH5164AV3HN LH5164AVHN/AVHT LH5164AST LH5164ASHN/ASHT LH51V256N/T-85SL LH51V256HN/HT-85SL LH52CV256N/T-10LL	PDF
SIL 100-03 Abstract: 13AZ LH52CV1000 Text: CMOS 1M 128 x 8 Static Ram FEATURES • Access time: 85 ns (MAX.) • Current consumption: Operating: 30 mA (MAX.) 5 mA (MAX.) (tRC; twc = 1 [is) Standby: 30 ylA (MAX.) • Data Retention: 0.5 {¿A (Typ. VCCDR = 3 V, tA = 25°C) PIN CONNECTIONS 32-PIN TSOP	OCR Scan	32-PIN LH52CV1000 32TSOP TSOP032-P-0820) LH52CV1000 32-pin, TSOP32-P-0820) LH52CV1000T-85LL SIL 100-03 13AZ	PDF
operating Abstract: LH52E1000 Text: MEMORIES Static RAMs W ★ Under development Low voltage operation Capacity confjguratj0n 16k x8 64k Model No. Access time ns 8 5 2 0 0 2 5 0 5 00 10 0 0 x8 LH5116S Supply voltage : 3 V ± 10% Operating temperature : 0 to 50*C LH5164AV Supply voltage : 2.7 to 5.5 V	OCR Scan	LH5116S LH5164AV LH5164AV3H LH5164AVH LH5164AS LH5164ASH LH51V256 LH51V256H LH52E1000 LH51V1016CJ operating LH52E1000	PDF