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    LF 023 Search Results

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    LF 023 Price and Stock

    Amphenol PCTEL MLF-02-36-S2-A

    MLFML195C MOUNT, 3 FT 0 IN LMR 1
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    DigiKey MLF-02-36-S2-A Bulk 25
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    RS MLF-02-36-S2-A Bulk 3 Weeks 1
    • 1 $60.85
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    Richardson RFPD MLF-02-36-S2-A 25
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    Amphenol PCTEL MLF-02-36-T2-A

    MLFML195C MOUNT, 3 FT 0 IN LMR 1
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    DigiKey MLF-02-36-T2-A Bulk 25
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    RS MLF-02-36-T2-A Bulk 3 Weeks 1
    • 1 $66.22
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    Richardson RFPD MLF-02-36-T2-A 25
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    Diodes Incorporated DMP6023LFG-13

    MOSFETs P-Ch 60V Enh Mode 20Vgs 53.1nC 2569pF
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    Mouser Electronics DMP6023LFG-13 43,932
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    Diodes Incorporated DMP6023LFGQ-7

    MOSFETs MOSFET BVDSS: 41V-60V
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    Mouser Electronics DMP6023LFGQ-7 36,206
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    Vishay Intertechnologies NTCSC0402E3103FLFT

    NTC Thermistors NTC 0402 NONAUT NISN 10Kohms 1%
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    Mouser Electronics NTCSC0402E3103FLFT 28,125
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    LF 023 Datasheets Context Search

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    samsung 2GB Nand flash 121 pins

    Abstract: SLC NAND endurance 100k
    Text: MuxOneNAND1G KFM1G16Q2M-DEB5 MuxOneNAND2G(KFN2G16Q2M-DEB5) FLASH MEMORY MuxOneNANDTMSpecification Density Part No. VCC(core & IO) 1Gb KFM1G16Q2M-DEB5 1.8V(1.7V~1.95V) Extended 63FBGA(LF) 2Gb KFN2G16Q2M-DEB5 1.8V(1.7V~1.95V) Extended 63FBGA(LF) Version: Ver. 1.1


    Original     		PDF KFM1G16Q2M-DEB5) KFN2G16Q2M-DEB5) KFM1G16Q2M-DEB5 KFN2G16Q2M-DEB5 63FBGA samsung 2GB Nand flash 121 pins SLC NAND endurance 100k

    Flash Memory datasheet mmc

    Abstract: TCA 785 application note mlc nand flash lsb msb SLC NAND endurance 100k KFN2G16Q2M-DEB5 samsung "nor flash" sensing Samsung oneNand Mux TCA 785 63FBGA KFM1G16Q2M-DEB5
    Text: MuxOneNAND1G KFM1G16Q2M-DEB5 MuxOneNAND2G(KFN2G16Q2M-DEB5) FLASH MEMORY MuxOneNANDTMSpecification Density Part No. VCC(core & IO) 1Gb KFM1G16Q2M-DEB5 1.8V(1.7V~1.95V) Extended 63FBGA(LF) 2Gb KFN2G16Q2M-DEB5 1.8V(1.7V~1.95V) Extended 63FBGA(LF) Version: Ver. 1.0


    Original     		PDF KFM1G16Q2M-DEB5) KFN2G16Q2M-DEB5) KFM1G16Q2M-DEB5 63FBGA KFN2G16Q2M-DEB5 80x11 KFG1G16Q2M) Flash Memory datasheet mmc TCA 785 application note mlc nand flash lsb msb SLC NAND endurance 100k KFN2G16Q2M-DEB5 samsung "nor flash" sensing Samsung oneNand Mux TCA 785 KFM1G16Q2M-DEB5

    samsung "nor flash" sensing

    Abstract: 63FBGA KFM1G16Q2M-DEB6 KFN2G16Q2M-DEB6
    Text: MuxOneNAND1G KFM1G16Q2M-DEB6 MuxOneNAND2G(KFN2G16Q2M-DEB6) FLASH MEMORY MuxOneNANDTMSpecification Density Part No. VCC(core & IO) 1Gb KFM1G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) 2Gb KFN2G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) Version: Ver. 1.2


    Original     		PDF KFM1G16Q2M-DEB6) KFN2G16Q2M-DEB6) KFM1G16Q2M-DEB6 63FBGA KFN2G16Q2M-DEB6 80x11 KFG1G16Q2M) samsung "nor flash" sensing KFM1G16Q2M-DEB6 KFN2G16Q2M-DEB6

    SLC NAND endurance 100k

    Abstract: No abstract text available
    Text: MuxOneNAND1G KFM1G16Q2M-DEB6 MuxOneNAND2G(KFN2G16Q2M-DEB6) FLASH MEMORY MuxOneNANDTMSpecification Density Part No. VCC(core & IO) 1Gb KFM1G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) 2Gb KFN2G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) Version: Ver. 1.0


    Original     		PDF KFM1G16Q2M-DEB6) KFN2G16Q2M-DEB6) KFM1G16Q2M-DEB6 KFN2G16Q2M-DEB6 63FBGA SLC NAND endurance 100k

    samsung 2GB Nand flash 121 pins

    Abstract: samsung 2GB Nand flash TOGGLE sensing nand flash memory SAMSUNG Electronics Toggle DDR NAND flash
    Text: MuxOneNAND1G KFM1G16Q2M-DEB6 MuxOneNAND2G(KFN2G16Q2M-DEB6) FLASH MEMORY MuxOneNANDTMSpecification Density Part No. VCC(core & IO) 1Gb KFM1G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) 2Gb KFN2G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) Version: Ver. 1.1


    Original     		PDF KFM1G16Q2M-DEB6) KFN2G16Q2M-DEB6) KFM1G16Q2M-DEB6 KFN2G16Q2M-DEB6 63FBGA samsung 2GB Nand flash 121 pins samsung 2GB Nand flash TOGGLE sensing nand flash memory SAMSUNG Electronics Toggle DDR NAND flash

    63FBGA

    Abstract: KFM1G16Q2M-DEB5 KFN2G16Q2M-DEB5
    Text: MuxOneNAND1G KFM1G16Q2M-DEB5 MuxOneNAND2G(KFN2G16Q2M-DEB5) FLASH MEMORY MuxOneNANDTM Specification Density Part No. VCC(core & IO) 1Gb KFM1G16Q2M-DEB5 1.8V(1.7V~1.95V) Extended 63FBGA(LF) 2Gb KFN2G16Q2M-DEB5 1.8V(1.7V~1.95V) Extended 63FBGA(LF) Version: Ver. 1.2


    Original     		PDF KFM1G16Q2M-DEB5) KFN2G16Q2M-DEB5) KFM1G16Q2M-DEB5 63FBGA KFN2G16Q2M-DEB5 80x11 KFG1G16Q2M) KFM1G16Q2M-DEB5 KFN2G16Q2M-DEB5

    Untitled

    Abstract: No abstract text available
    Text: T3/DS3/E3/STS-1 Transformer ELECTRONICS INC. EPA3582 & EPA3582-LF • Through Hole Package • 3000 Vrms Isolation with Reinforced Insulation • Operating Temperature Range : -40˚C to +85˚C • Add “-LF” after part number for Lead Free Electrical Parameters @ 25°C


    Original     		PDF EPA3582 EPA3582-LF EPA3582 EPBA3582 EPA3582-LF CSA3582

    SAMSUNG 256Mb NAND Flash Qualification Report

    Abstract: Samsung nand flash 2GB MLC 0301H 803A samsung 1Gb nand flash Samsung 2Gb MLC Nand flash samsung 2GB Nand flash samsung 2GB X16 Nand flash samsung dual lcd samsung MLC nand flashes
    Text: OneNAND1G KFG1G16Q2A-DEBx OneNAND2G(KFH2G16Q2A-DEBx) OneNAND4G(KFW4G16Q2A-DEBx) Preliminary FLASH MEMORY OneNANDTM Preliminary Information Specification Density Part No. VCC(core & IO) Temperature PKG 1Gb KFG1G16Q2A-DEBx 1.8V(1.7V~1.95V) Extended 63FBGA(LF)


    Original     		PDF KFG1G16Q2A-DEBx) KFH2G16Q2A-DEBx) KFW4G16Q2A-DEBx) KFG1G16Q2A-DEBx 63FBGA KFH2G16Q2A-DEBx KFW4G16Q2A-DEBx SAMSUNG 256Mb NAND Flash Qualification Report Samsung nand flash 2GB MLC 0301H 803A samsung 1Gb nand flash Samsung 2Gb MLC Nand flash samsung 2GB Nand flash samsung 2GB X16 Nand flash samsung dual lcd samsung MLC nand flashes

    TCA 785 application note

    Abstract: KFM1G16Q2A TCA 700 v tca 785 128Mb DDR SDRAM samsung version 0.3 Samsung 2Gb 3V MLC Nand flash Samsung MLC Samsung oneNand Mux 63FBGA 1004C
    Text: MuxOneNAND1G KFM1G16Q2A-DEBx MuxOneNAND2G(KFN2G16Q2A-DEBx) Preliminary FLASH MEMORY MuxOneNANDTM Preliminary Information Specification Density Part No. VCC(core & IO) Temperature PKG 1Gb KFM1G16Q2A-DEBx 1.8V(1.7V~1.95V) Extended 63FBGA(LF) 2Gb KFN2G16Q2A-DEBx


    Original     		PDF KFM1G16Q2A-DEBx) KFN2G16Q2A-DEBx) KFM1G16Q2A-DEBx 63FBGA KFN2G16Q2A-DEBx 80x11 KFG1G16Q2A) TCA 785 application note KFM1G16Q2A TCA 700 v tca 785 128Mb DDR SDRAM samsung version 0.3 Samsung 2Gb 3V MLC Nand flash Samsung MLC Samsung oneNand Mux 1004C

    8015

    Abstract: No abstract text available
    Text: OneNAND4G KFW4G16Q2M-DxB6 OneNAND2G(KFH2G16Q2M-DxB6) OneNAND1G(KFG1G16x2M-DxB6) FLASH MEMORY OneNANDTM Specification Density Part No. VCC(core & IO) Temperature PKG 1Gb KFG1G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) KFG1G16D2M-DEB6 2.65V(2.4V~2.9V)


    Original     		PDF KFW4G16Q2M-DxB6) KFH2G16Q2M-DxB6) KFG1G16x2M-DxB6) KFG1G16Q2M-DEB6 KFG1G16D2M-DEB6 KFG1G16U2M-DIB6 63FBGA 8015

    KFW4G16Q2M-DEB5

    Abstract: 63FBGA KFG1G16Q2M-DEB5 KFH2G16Q2M-DEB5 KFG1G16x2M-DxB5 NAND FLASH DDP samsung 649
    Text: OneNAND4G KFW4G16Q2M-DxB5 OneNAND2G(KFH2G16Q2M-DxB5) OneNAND1G(KFG1G16x2M-DxB5) FLASH MEMORY OneNANDTM Specification Density Part No. VCC(core & IO) Temperature PKG 1Gb KFG1G16Q2M-DEB5 1.8V(1.7V~1.95V) Extended 63FBGA(LF) KFG1G16D2M-DEB5 2.65V(2.4V~2.9V)


    Original     		PDF KFW4G16Q2M-DxB5) KFH2G16Q2M-DxB5) KFG1G16x2M-DxB5) KFG1G16Q2M-DEB5 63FBGA KFG1G16D2M-DEB5 KFG1G16U2M-DIB5 KFH2G16Q2M-DEB5 KFW4G16Q2M-DEB5 KFG1G16Q2M-DEB5 KFH2G16Q2M-DEB5 KFG1G16x2M-DxB5 NAND FLASH DDP samsung 649

    OneNAND

    Abstract: KFH2G16Q2M-DEB5 63FBGA KFG1G16Q2M-DEB5 KFW4G16Q2M-DEB5
    Text: OneNAND4G KFW4G16Q2M-DEB5 OneNAND2G(KFH2G16Q2M-DEB5) OneNAND1G(KFG1G16Q2M-DEB5) FLASH MEMORY OneNANDTM Specification Density Part No. VCC(core & IO) Temperature PKG 1Gb KFG1G16Q2M-DEB5 1.8V(1.7V~1.95V) Extended 63FBGA(LF) 2Gb KFH2G16Q2M-DEB5 1.8V(1.7V~1.95V)


    Original     		PDF KFW4G16Q2M-DEB5) KFH2G16Q2M-DEB5) KFG1G16Q2M-DEB5) KFG1G16Q2M-DEB5 63FBGA KFH2G16Q2M-DEB5 KFW4G16Q2M-DEB5 OneNAND KFH2G16Q2M-DEB5 KFG1G16Q2M-DEB5 KFW4G16Q2M-DEB5

    4GB MLC NAND

    Abstract: samsung 2GB Nand flash samsung 1Gb nand flash Samsung Electronics. NAND flash memory Samsung MLC 63FBGA KFG1G16Q2M-DEB6 KFH2G16Q2M-DEB6 KFW4G16Q2M-DEB6 0235H
    Text: OneNAND4G KFW4G16Q2M-DEB6 OneNAND2G(KFH2G16Q2M-DEB6) OneNAND1G(KFG1G16Q2M-DEB6) FLASH MEMORY OneNANDTM Specification Density Part No. VCC(core & IO) Temperature PKG 1Gb KFG1G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) 2Gb KFH2G16Q2M-DEB6 1.8V(1.7V~1.95V)


    Original     		PDF KFW4G16Q2M-DEB6) KFH2G16Q2M-DEB6) KFG1G16Q2M-DEB6) KFG1G16Q2M-DEB6 63FBGA KFH2G16Q2M-DEB6 KFW4G16Q2M-DEB6 4GB MLC NAND samsung 2GB Nand flash samsung 1Gb nand flash Samsung Electronics. NAND flash memory Samsung MLC KFG1G16Q2M-DEB6 KFH2G16Q2M-DEB6 KFW4G16Q2M-DEB6 0235H

    KFW4G16Q2M-DEB5

    Abstract: OneNAND KFH2G16Q2M-DEB5 USB Flash Memory SAMSUNG 63FBGA KFG1G16Q2M-DEB5
    Text: OneNAND4G KFW4G16Q2M-DEB5 OneNAND2G(KFH2G16Q2M-DEB5) OneNAND1G(KFG1G16Q2M-DEB5) FLASH MEMORY OneNANDTM Specification Density Part No. VCC(core & IO) Temperature PKG 1Gb KFG1G16Q2M-DEB5 1.8V(1.7V~1.95V) Extended 63FBGA(LF) 2Gb KFH2G16Q2M-DEB5 1.8V(1.7V~1.95V)


    Original     		PDF KFW4G16Q2M-DEB5) KFH2G16Q2M-DEB5) KFG1G16Q2M-DEB5) KFG1G16Q2M-DEB5 63FBGA KFH2G16Q2M-DEB5 KFW4G16Q2M-DEB5 KFW4G16Q2M-DEB5 OneNAND KFH2G16Q2M-DEB5 USB Flash Memory SAMSUNG KFG1G16Q2M-DEB5

    Untitled

    Abstract: No abstract text available
    Text: Product Detail Page Direct Links Page 1 of 2 . Start > Search=30220801* > 30220801 30220801 Cross Reference Assistant Ad RoHS/LF P/N search Document & Drawing search 30220801 Application tooling Services 6 way Component-to-Wire Female housing . Email Datasheet


    Original     		PDF

    107D

    Abstract: 204C 213B
    Text: LF-402/LF-418 Wideband RF/Pulse Transformers .01/100 MHz/,01-100 MHz LcS/EflZff mOHOQtVICES GUARANTEED MINIMUM PERFORMANCE DATA SPECIFICATIONS FOR MODEL LF-402 2.5 .01-100 .5 1.5:1 i £3 1 .01 Frequency in MHz 10 1 100 LF-418 1 .01-100 .5 2.0:1 1.5 ; I 2 ! 3


    OCR Scan     		PDF LF-402/LF-418 MIL-T-55631 LF-402 MIL-STD-202E LF-418 QQ-S-365A, 42Zdia_ 107D 204C 213B

    107D

    Abstract: 204C 213B
    Text: LF-402/LF-418 Wideband RF/Pulse Transformers .01/100 MHz/,01-100 MHz LcS/EflZA* mOHOQtVICES GUARANTEED MINIMUM PERFORMANCE DATA SPECIFICATIONS FOR MODEL LF-402 2.5 .01-100 .5 1.5:1 i £3 1 .01 Frequency in MHz 10 1 100 LF-418 1 .01-100 .5 2.0:1 1.5 ; I 2 ! 3


    OCR Scan     		PDF LF-402/LF-418 MIL-T-55631 LF-402 MIL-STD-202E LF-418 QQ-S-365A, 42Zdia_ 107D 204C 213B

    lf412

    Abstract: QQ-S-365A Design of H.F. Wideband Power Transformers 107D 204C 213B LF-412 of transformer MIL-STD-202E 106d
    Text: LF-412 Wideband RF/Pulse Transformers ZSIRflìIfl fcr GUARANTEED MINIMUM PERFORMANCE DATA TYPICAL PERFORMANCE SPECIFICATIONS FOR MODEL LF-412 Type: 50 ohm unbalanced 50 ohm unbalanced ph. rev. DC isolated - 1 dB Bandwidth, MHz Midband insertion loss dB VSWR


    OCR Scan     		PDF LF-412 MIL-T-55631 LF-412 MIL-STD-202E. MIL-STD-202E QQ-S-365A, lf412 QQ-S-365A Design of H.F. Wideband Power Transformers 107D 204C 213B of transformer MIL-STD-202E 106d

    MIL-T-55631

    Abstract: LF-412 lf412 MIL-STD202E 107D 204C 213B LF 412
    Text: fcr ZSIRflilfl LF-412 Wideband RF/Pulse m cM om cfs GUARANTEED MINIMUM PERFORMANCE DATA TrnT2°sMHi TYPICAL PERFORMANCE SPECIFICATIONS FOR MODEL LF-412 Type: 50 ohm unbalanced 50 ohm unbalanced ph. rev. DC isolated - 1 dB Bandwidth, MHz Midband insertion loss dB


    OCR Scan     		PDF LF-412 MIL-T-55631 MIL-STD-202E. MIL-STD-202E QQ-S-365A, lf412 MIL-STD202E 107D 204C 213B LF 412

    rf transformer 50 ohm to 0.1 ohm

    Abstract: LF-402 1055 107D 204C 213B
    Text: Lzmma GUARANTEED MINIMUM PERFORMANCE DATA m LF-402 2.5 It .01-100 .5 1.5:1 i £3 1 .01 Frequency in MHz 10 1 100 LF-418 Type: 50 ohm unbalanced 200 ohm unbalanced 1 .01-100 .5 2.0:1 1.5 ; I 2 ! 3 ¡Wit .01 1 Frequency in MHz NOTE: DESCRIPTION , 1.5 j •2 2


    OCR Scan     		PDF LF-402/LF-418 MIL-T-55631 LF-402 MIL-STD-202E LF-418 QQ-S-365A, 42Zdia_ rf transformer 50 ohm to 0.1 ohm LF-402 1055 107D 204C 213B

    PS2018

    Abstract: PS2016B PS2006B PS2022 nec scr PS2021 PS2007B PS2023 PS2401A ic ps2016b
    Text: N EC ELECTRONICS INC S^C D • bM57SaS QOOSMSb D ■ NECE C H AR AC TER ISTIC S Ta = 2 5 •C ABSOLUTE MAXIMUM RATINGS (T a= 25 "Cl FEATURES TYPE NO. IC(m A) lF(mA) B V(V a C) ! T o pt('C ) (lF = 1 0 I PS2015 4 K 80 150 High in p u t c u rre n t ' 80 Industrial use


    OCR Scan     		PDF bM57SaS PS2015 PS2018 PS2021 PS2022 PS2006B PS2016B PS2007B PS2018 PS2006B PS2022 nec scr PS2023 PS2401A ic ps2016b

    Untitled

    Abstract: No abstract text available
    Text: PART NUMBER REV. SSP-13MDB152UP24G A UNCONTROLLED DOCUMENT REV, A 023,82 WO,9 38] E.C.N. NUMBER AND REVISION COMMENTS E.C.N. #11149. ELECTRO-OPTICAL CHARACTERISTICS Ta = 2 5 T PARAMETER MIN lf= 3 0 / 6 0 m A * TYP PEAK WAVELENGTH MAX UNITS TEST COND 525 nm


    OCR Scan     		PDF SSP-13MDB152UP24G 205D0 20fjA 30/BamA*

    SSL-LX22R13SUGD

    Abstract: No abstract text available
    Text: PART NUMBER UNCONTROLLED DOCUMENT REV. SSL-LX22R13SUGD 13.50 [0.531] 023.00 [0 0 .9 0 6 ] I— 4.0 [0.157] 020.00 [0 0 .7 8 7] ELECTRO-OPTICAL CHARACTERISTICS Ta =2 5 X 15,24 [0,600] PARAMETER 2.70 [0.106] MIN PEAK WAVELENGTH REVERSE VOLTAGE lf= 2 0 m A MAX


    OCR Scan     		PDF SSL-LX22R13SUGD SSL-LX22R13SUGD

    Untitled

    Abstract: No abstract text available
    Text: 8368602 flh SOLITRON D lF | f l3 b f lb 0 2 DEVICES □ □ □ E 3 ci3 2 INC 86D 02393 D T ó J - // |~ SCHOTTKY RECTIFIERS SSP820 SSP830 SSP840 Bolitron D E V I C E S , I NC. POWER SQHOTTKY RECTIFIERS 8 AMPERES FEATURES HIGH EFFICIENCY NANOSECOND SWITCHING


    OCR Scan     		PDF SSP820 SSP830 SSP840 D0-203AA SSP820 SSP830 SSP840