LETLSN2S0002 Search Results

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

lN5534

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Infrared Light Emitting Diodes LN55 GaAs Infrared Light Emitting Diode For optical control systems • Features M Di ain sc te on na tin nc ue e/ d  High-power output, high-efficiency: PO = 3.5 mW (typ.)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Infrared Light Emitting Diodes LN75X GaAIAs Infrared Light Emitting Diode For optical control systems • Features M Di ain sc te on na tin nc ue e/ d  High-power output, high-efficiency: PO = 10 mW (typ.)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Infrared Light Emitting Diodes LN65 GaAs Infrared Light Emitting Diode For optical control systems • Features M Di ain sc te on na tin nc ue e/ d  High-power output, high-efficiency: PO = 5.5 mW (typ.)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Infrared Light Emitting Diodes LN75X GaAIAs Infrared Light Emitting Diode For optical control systems • Features  High-power output, high-efficiency: PO = 10 mW (typ.)  High-speed modulation capability: fC = 12 MHz

LN65

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Infrared Light Emitting Diodes LN65 GaAs Infrared Light Emitting Diode For optical control systems • Features  High-power output, high-efficiency: PO = 5.5 mW (typ.)  Good radiant power output linearity with respect to input current

mip411

Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Infrared Light Emitting Diodes LN55 GaAs Infrared Light Emitting Diode For remote control systems • Features  High-power output, high-efficiency: PO = 3.5 mW (typ.)  Suited for use with silicon photodetectors

PO 102

Abstract: LN55 po102
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Infrared Light Emitting Diodes LN55 GaAs Infrared Light Emitting Diode For optical control systems • Features  High-power output, high-efficiency: PO = 3.5 mW (typ.)  Suited for use with silicon photodetectors