LEM LC 500 Search Results

U01A

Contextual Info: KSD471A NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER • C o m p lem en t to KSB564 A • C o llecto r C u rren t lc » 1A • C o llecto r D issip atio n Pc = 800 *rtW TO-82 ABSOLUTE MAXIMUM RATINGS T.=25°C Characteristic Symbol Rating

trimpot

Abstract: trimpot 20k 300ip MIL-E-5272 Trimpot 300
Contextual Info: ADJUSTMENT POTENTIOMETER TRIMPOT P o te n tio m e te r Model 3 0 0 1 High T e m p e ra tu r e , Humidity-Proof C a rb o n E lem ent 9 / 3 / 7 ,3 S Jo ¿ / Æ Æ C .r 3 0 0 CP /S A / j C .LC & Æ .K T ¿Eor O ur FEATURES • Space saver: .75 x .16 x 31).

FCX749

Contextual Info: FCX749 SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FEATU RES * * * F A S T SW ITCH IN G . LO W SA T U R A T IO N V O LTA G E . H fe UP TO 6A P U LSED . * * 2 A lc CO N TIN U O U S. CO M P LEM EN TA R Y T Y P E - FCX649. PARTM ARKIN G D E T A ILS - N6

FCX649

Abstract: FCX749 lem lc 300
Contextual Info: FCX649 SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FE A T U R E S * * F A S T SW ITCH IN G . LOW S A T U R A TIO N V O LTA G E . * * H fe UP TO 6A PU LSED . 2 A lc CO N TIN U O U S. * CO M P LEM EN TA R Y T YP E - FCX749. PAR TM A R KIN G D E TA ILS - N3

LEM2520T

Abstract: lem lc 1000-s LEM 3225 lem 55 LEM inductor LEM LC 300-S LEM LC 500-S
Contextual Info: 巻線チップインダクタ WOUND CHIP INDUCTORS LE SERIES M TYPE OPERATING TEMP. K40VJ85C 特長 FEATURES YA high-quality inductor that is simple to mass-produce and conforms to the same production process and basic construction as an axial lead type

LEM 3225

Abstract: F236
Contextual Info: 巻線チップインダクタ WOUND CHIP INDUCTORS LE SERIES M TYPE OPERATING TEMP. K40VJ85C 特長 FEATURES YA high-quality inductor that is simple to mass-produce and conforms to the same production process and basic construction as an axial lead type inductor.

TL65

Abstract: powertech PT-2523 PT-2524 PT2524 q741D PB-500 2524 C-357
Contextual Info: 17E » DDD03B3 “BIG IDEAS IN 3 BIG POWER" • ■ ■ PowerTech POWERTECH INC 150 AMPERE TRANSISTOR T -S 3 -IS P T -2 5 2 3 P T -2 5 2 4 FEATURES PT-2524 . 450V . 500V PT-2523 400V . . . 450V . . . Vcbo 6' LONG , 8V 100A 150A .* •

LEMC3225

Abstract: K2534 HP8720B LER015 LEMF2520 LEMF3225 P10-PART LEMC3 LBH1608G2N7D LBH1608G3N3D
Contextual Info: 高周波巻線チップインダクタ WOUND CHIP INDUCTORS FOR HIGH FREQUENCY LB SERIES H TYPE OPERATING TEMP. K25VJ85C 特長 FEATURES YDimention attaches much importance to characteristics of mount case. YThe product has excellent Q and SRF because, wound chip inductor.

HP8720B

Abstract: LEMF2520
Contextual Info: 高周波巻線チップインダクタ WOUND CHIP INDUCTORS FOR HIGH FREQUENCY LB SERIES H TYPE OPERATING TEMP. K25VJ85C 特長 FEATURES YDimention attaches much importance to characteristics of mount case. YThe product has excellent Q and SRF because, wound chip inductor.

AD5812

Abstract: LEMF3225 LEMC3225
Contextual Info: 高周波巻線チップインダクタ WOUND CHIP INDUCTORS FOR HIGH FREQUENCY LBH SERIES OPERATING TEMP. K25VJ85C 特長 FEATURES YDimention attaches much importance to characteristics of mount case. YThe product has excellent Q and SRF because, wound chip inductor.

Contextual Info: 高周波巻線チップインダクタ WOUND CHIP INDUCTORS FOR HIGH FREQUENCY LB SERIES H TYPE OPERATING TEMP. K25VJ85C 特長 FEATURES YDimention attaches much importance to characteristics of mount case. YThe product has excellent Q and SRF because, wound chip inductor.

LEM2520 2R2M

Abstract: lemc3225
Contextual Info: 巻線チップインダクタ WOUND CHIP INDUCTORS LB SERIES OPERATING TEMP. K25VJ85C 特長 FEATURES YSmall size wound chip inductor with low DC resistance. YDemension without directional influence on mounterbility and characteristics. Y超小型低直流抵抗の巻線チップインダクタ

Contextual Info: 巻線チップインダクタ WOUND CHIP INDUCTORS LB SERIES OPERATING TEMP. K25VJ85C 特長 FEATURES YSmall size wound chip inductor with low DC resistance. YDemension without directional influence on mounterbility and characteristics. Y超小型低直流抵抗の巻線チップインダクタ

LEMF3225

Abstract: lemc3225 JIS K 5400 8.3
Contextual Info: 巻線チップインダクタ WOUND CHIP INDUCTORS CYLINDRICAL TYPE LE SERIES R TYPE OPERATING TEMP. K25VJ85C 015 TYPE 012, 015 TYPE 特長 FEATURES Yアキシャルリード形インダクタの製造工程Y基本構造を継承した量産性に 優れた高品質のインダクタ

LEMC3225

Abstract: LEM2520 LEMF3225 LEMC3 100AH LEM25 JISC0051 ler015
Contextual Info: 巻線チップインダクタ WOUND CHIP INDUCTORS LE SERIES M TYPE OPERATING TEMP. K40VJ85C 特長 FEATURES YA high-quality inductor that is simple to mass-produce and conforms to the same production process and basic construction as an axial lead type

Contextual Info: 巻線チップインダクタ WOUND CHIP INDUCTORS LE SERIES M TYPE OPERATING TEMP. K40VJ85C 特長 FEATURES YA high-quality inductor that is simple to mass-produce and conforms to the same production process and basic construction as an axial lead type

d 5071 transistor

Abstract: b0507 BD509 BD50 transistor transistor bd509 SC 5071 BD5a BD50 bd 609 transistor BD507
Contextual Info: W tW Ö l T ~ S C ^ C X S T R S /R 6367254 » T | b 3 b 7 a s 4 F3- MOTOROLA SÇ_ XST_RS/R F>. 96D 8 0 5 9 9 o o f l ü s n D T -J J - 07 MOTOROLA •a SEM ICO ND U C TO R TECHNICAL DATA N P N S IL IC O N A U D IO T R A N S I S T O R S N P N S IL IC O N A N N U LA R *

mrf164

Abstract: MRF164W
Contextual Info: M O TO RO LA SEMICONDUCTOR TECHNICAL DATA The RF TMOS Line Power Field Effect Transistor MRF164W N-Channel Enhancement Mode D e sig n e d p rim a rily fo r w id e b a n d la rg e -s ig n a l o u tp u t and d riv e r sta g e s to 500 M Hz. • G u a ra n te e d P e rfo rm a n ce at 4 0 0 M H z, 28 Vdc

transistor KIN

Contextual Info: SOT223 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 3 -AUGUST 1995 Q FEATU RES * Suitable for AF drivers and output stages * High collector current and Low Vct sat( C O M P LEM EN TA R Y T YP E BCP53 PA R TM A R KIN G D E T A ILS BCP56 B C P 5 6 - 10 B C P 5 6 - 16

Contextual Info: 巻線チップパワーインダクタ WOUND CHIP POWER INDUCTORS CB SERIES OPERATING TEMP. K25VJ105C（製品自己発熱含む） fIncluding self-generated heatg 特長 FEATURES YLB / LBC シリーズに対し大電流化に対応しています。小型のDC/DCコン

F20M

Contextual Info: SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT458 ISSU E 3 - OCTOBER 1995_ FEATURES * 400 Volt V CE0 C O M P LEM EN T A R Y TYPE - FM M T558 P A R T M A R K IN G D E T A I L - 458 SOT23 ABSOLUTE M A X IM U M RATINGS. PARAM ETER Collector-Base Voltage

Contextual Info: FMMT549 FMMT549A SOT23 PNP SILICON PLANAR M EDIUM POWER TRANSISTORS IS S U E 3 - O C T O B E R 1995 O FEATURES * Low equivalent on-resistance; RCE sat 250m£2 at 1A * 1 A m p continuous current C O M P LEM EN T A R Y TY PES - FM M T549 - FM M T449 F M M T 5 4 9 A - N/A

Contextual Info: SOT223 NPN SILICON PLANAR M EDIUM POWER TRANSISTOR ISSUE 3 - N O V E M B E R 19QR FZT493 O C O M P LEM EN T A R Y TYPE - FZ T 593 P A R T M A R K IN G D E T A IL - FZ T 493 m B ABSOLUTE M A X IM U M RATINGS. PARAM ETER Collector-Base Voltage Collector-Emitter Voltage

Contextual Info: SOT23 PNP SILICON PLANAR MEDIUM POWER HIGH PERFORMANCE TRANSISTOR ISSUE 4 -JUNE 1996 FEATU RES * Low equivalent on-resistance; RCEjMti 25 0 m ii at 1A PA R TM A R KIN G D E T A IL S C O M P LEM EN TA R Y T Y P E - 589 FMMT489 ABSOLUTE MAXIMUM RATINGS. PARA M ETER