LEM 55.2 Search Results

Contextual Info: AUTOMOTIVE CURRENT TRANSDUCER HC6F700-S 18198102215 Page 1/5 080401/2 LEM reserves the right to carry out modifications on its transducers, in order to improve them, without prior notice. www .lem.com HC6F700-S Introduction Principle of HC6F Family The HC6F Family is for use on the electronic measurement of

Contextual Info: AUTOMOTIVE CURRENT TRANSDUCER HC6H700-S 18198151434 Page 1/ 5 080402/4 LEM reserves the right to carry out modifications on its transducers, in order to improve them, without prior notice. www .lem.com HC6H700-S Introduction Principle of HC6H Family The HC6H Family is for use on the electronic measurement of

651 lem

Abstract: FU65SDF3
Contextual Info: • bSM'ìflET 001 f l 330 O flO ■ MITSUBISHI O P T IC A L D E V IC E S FU-65SDF-38M1 1.55 \im DFB-LD MODULE WITH SIN G LEM O DE FIBER PIGTAIL (CATV) DESCRIPTION FEATURES M odule typ e FU -45SDF-38M 1 has been developed • Distributed Feedback (DFB) Laser diode

7360 tube

Abstract: Y8963 yagi vhf yagi uhf Y896 YS43012 Y1363 Y4503
Contextual Info: DIRECTIONAL Y Be sure to take a close look! This is undoubtedly the finest de­ signed and fully featured gamma match Yagi in the industry. The fully welded ANTENEX Yagi antenna features full 360-degree welds around each element to boom joint and they are fully gold

ews50-12

Abstract: EWS50-15 EWS50-5 EWS50-18 EWS50-24 EWS50-6 EWS50-9
Contextual Info: DENSEI-LAMBDA EW S50 SPEC IFIC A TIO N S PA707-01-01 E - - - - - _ MODEL EW S50-5 ITEMS EW S50-6 EWS50-9 EW S50-12 EW S50-15 EWS50-18 EW S50-24 EWS5D-2B EWSS0-46 ~ t Nominal O utput Voltage V 5 6 9 12 15 18 24 28 48 2 Maximum Output Current A 10 8.4 5 6 44

YDA4702

Abstract: YDA4704 yda 1364 ymst18 YDA1362
Contextual Info: DIPOLE ARRAY A Don’t let the price of our YDA Dipole antenna mislead you. This is a serious antenna with high class features, such as full golda n o d iza tio n, fully w elded elem ents, and chrom e p la te d brass “N ” connector. Our two and four bay dipole antenna array

Contextual Info: Philips Semiconductors Product specification CATV power doubler amplifier module FEATURES BGD104 PINNING - SOT115J • E xcellent linearity PIN DESCRIPTION • High output level 1 input • Silicon nitride passivation 2 com m on • R ugged construction 3

CGY887A

Abstract: DIN45004B
Contextual Info: P hilips S em ico n d uctors P relim inary specification CATV amplifier module CGY887A FEA TU R E S P IN N IN G -S O T 1 1 5 J • High gain D ES C R IPTIO N input 2 com m on • R ugged construction 3 com m on • Gold m etallization e nsures excellent reliability.

BGY585A

Abstract: DIN45004B
Contextual Info: P hilips S em ico n d uctors Product sp ecification CATV amplifier module FEA TUR ES BGY585A P IN N IN G - SO T115J • E xcellent linearity PIN D E S C R IP T IO N • E xtrem ely low noise 1 input • S ilicon nitride passivation 2 com m on • R ugged construction

Contextual Info: N AUER PHILIPS/DISCRETE bRE » - bbS3R31 0033524 b42 - A P X Philips Semiconductors Product specification CATV amplifier module FEATURES • Excellent linearity • Extremely low noise • Silicon nitride passivation • Rugged construction • Gold metallization ensures

pulse 01940

Abstract: 2SC4959 lem 714
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA806T MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD FEATURES PACKAGE DRAWINGS • Low Noise, High Gain (Unit: mm) • Operable at Low Voltage 2.1±0.1 • Small Feed-back Capacitance

pin IC 7479

Abstract: NE685 S21E UPA826TF UPA826TF-T1 pt 6964
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES • • • • UPA826TF OUTLINE DIMENSIONS Units in mm LOW NOISE AND HIGH GAIN OPERABLE AT LOW VOLTAGE SMALL FEEDBACK CAPACITANCE: Cre = 0.4 pF TYP SMALL PACKAGE STYLE: 2 NE685 die in a 2 mm x 1.25 mm x 0.6 mm package

Contextual Info: DISCRETE SEMICONDUCTORS BGD902L CATV amplifier module Preliminary specification Philips Semiconductors 1999 Mar 26 PHILIPS PHILIPS Philips Semiconductors Preliminary specification CATV amplifier module BGD902L FEATURES PINNING-SOT115J • E xcellent linearity

Contextual Info: DISCRETE SEMICONDUCTORS BITÂ S y i I T BGY588N CATV amplifier module Product specification Supersedes data of 1999 Jan 01 Philips Sem iconductors 1999 Mar 29 PHILIPS Philips Semiconductors Product specification CATV amplifier module BGY588N FEATURES PINNING-SOT115J

lem 55.2

Abstract: 26960 2SC4959
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: DISC RETE S E M IC O N D U C TO R S ATA S&flEET BGD902 CATV amplifier module 1998 M ar 12 P relim inary specification File under D iscrete S em iconductors, SC16 Philips Semiconductors PHILIPS PHILIPS Philips S e m ico nd uctors Prelim inary specification

2SC4570

Abstract: xy 801 ic
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA813T NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4570 SMALL MINI MOLD µPA813T has built-in 2 transistors which were developed for UHF. PACKAGE DRAWINGS (Unit: mm) FEATURES 2.1±0.1 • High fT 1.25±0.1

ic 7483 pin configuration

Abstract: T 427 transistor TYP 513 309 2SC4570 ts 1683 nec 5261
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA803T NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD µPA803T has built-in 2 transistors which were developed for UHF. PACKAGE DRAWINGS (Unit: mm) FEATURES 2.1±0.1 • High fT 1.25±0.1 6

pt 8726 transistor

Abstract: PA809T Nec 4558 c 743 LEM KB 7780 2SC5193
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA809T MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD FEATURES PACKAGE DRAWINGS • Low Voltage Operation, Low Phase Distortion (Unit: mm) • Low Noise 2.1±0.1

Contextual Info: DISC RETE S E M IC O N D U C TO R S ATA S&flEET BGD508 CATV amplifier module 1998 Mar 16 Product specification Supersedes data of 1995 Nov 14 File under Discrete Semiconductors, SC16 Philips Semiconductors PHILIPS PHILIPS Ph il ips S e m i c o nd u c t o r s

Contextual Info: DISC RETE S E M IC O N D U C TO R S ATA S&flEET BGY685A CATV amplifier module 1998 Mar 16 Product specification Supersedes data of 1997 Apr 21 File under Discrete Semiconductors, SC16 Philips Semiconductors PHILIPS PHILIPS Philips S e m i c o n d u c t o r s

lem 55.2

Abstract: UPA814T 795-29-9 2SC5193 3699 npn NEC 2506 741 LEM
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA814T MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5193 SMALL MINI MOLD FEATURES PACKAGE DRAWINGS (Unit: mm) • Low Voltage Operation, Low Phase Distortion • Low Noise

D1880

Abstract: transistor D1880 d2646 D4205 D4144 d1839 D1880 Transistor D5149 D1294 D2243
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR PPA826TF HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 u 2SC4959 THIN -TYPE SMALL MINI MOLD PACKAGE DRAWINGS (Unit: mm) FEATURES • Low noise and high gain 2.10±0.1

CT 1975 sam

Abstract: transistor NEC D 588 NEC 2561 LE 401 zo 607 p 408 NEC 2561 de nec 2561 Q 634 date sheet ic 7483 C4570 CT 1975 - sam T72 marking
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION T h e 2S C 4 5 7 0 is a low su p p ly vo lta g e tra n sisto r de sig n e d for UHF PACKAGE DIMENSIONS Units: mm O S C /M IX . 2.1 ±0.1 It is su ita b le fo r a high d e n sity surface m ount asse m bly sin ce the