LEG COMMUNICATION SYSTEMS Search Results

3 phase UPS

Abstract: 4410 mosfet induction heating mosfet driver circuits isolated half bridge igbt gate driver MOSFET welding INVERTER
Contextual Info: Integrateci Circuits ISOSMART Half Bridge Driver Chipset, IXBD 4410 and 4411 Features • 1200 V or greater low- to high-side isolation ■ Drives power systems operating from industrial AC mains ■ dv/dt immunity of greater than 50 V/ns ■ Proprietary low- to high-side level-translation and communication

SO47

Abstract: BTS 4411 UPS FERRITE
Contextual Info: Integrated Circuits ISOSMART8 Half Bridge Driver Chipset, IXBD 4410 and 4411 Features • 1200 V or greater low- to high-side isolation • Drives power systems operating from industrial AC mains • dv/dt immunity of greater than 50 V/ns • Proprietary low- to high-side level-translation and communication

Contextual Info: MBR40045CTS Silicon Power Schottky Diode VRRM IF Features = = 45 V 400 A Package • High Surge Capability Pin 1 Pin 3 Pin 2 Pin 4 SOT – 227 Maximum Ratings at Tj = 125 °C, unless otherwise specified Parameter Repetitive peak reverse voltage RMS reverse voltage

Contextual Info: MBR200100CTS Silicon Power Schottky Diode VRRM IF Features = = 100 V 200 A Package • High Surge Capability Pin 1 Pin 3 Pin 2 Pin 4 SOT – 227 Maximum Ratings at Tj = 125 °C, unless otherwise specified Parameter Repetitive peak reverse voltage RMS reverse voltage

Contextual Info: MBR40045CTS Silicon Power Schottky Diode VRRM IF Features = = 45 V 400 A Package • High Surge Capability Pin 2 Pin 4 Pin 1 Pin 3 SOT – 227 Maximum Ratings at Tj = 125 °C, unless otherwise specified Parameter Repetitive peak reverse voltage RMS reverse voltage

Contextual Info: MBR200100CTS Silicon Power Schottky Diode VRRM IF Features = = 100 V 200 A Package • High Surge Capability Pin 2 Pin 4 Pin 1 Pin 3 SOT – 227 Maximum Ratings at Tj = 125 °C, unless otherwise specified Parameter Repetitive peak reverse voltage RMS reverse voltage

Contextual Info: MBR40045CTS Silicon Power Schottky Diode VRRM IF Features = = 45 V 400 A Package • High Surge Capability Pin 1 Pin 3 Pin 2 Pin 4 SOT – 227 Maximum Ratings at Tj = 125 °C, unless otherwise specified Parameter Repetitive peak reverse voltage RMS reverse voltage

Contextual Info: MBR200100CTS Silicon Power Schottky Diode VRRM IF Features = = 100 V 200 A Package • High Surge Capability Pin 1 Pin 3 Pin 2 Pin 4 SOT – 227 Maximum Ratings at Tj = 125 °C, unless otherwise specified Parameter Repetitive peak reverse voltage RMS reverse voltage

CSD20060

Abstract: CSD20060D D 16027 G
Contextual Info: CSD20060 ZERO RECOVERYTM RECTIFIER Features Benefits _ • 600 Volt Schottky Rectifier • Replace Bipolar with Unipolar Rectifiers • Zero Reverse Recovery • Essentially No Switching Losses • Zero Forward Recovery • Higher Efficiency • High Frequency Operation

D 16027 G

Abstract: CSD20060D CSD20060
Contextual Info: CSD20060 ZERO RECOVERYTM RECTIFIER Features Benefits _ • 600 Volt Schottky Rectifier • Replace Bipolar with Unipolar Rectifiers • Zero Reverse Recovery • Essentially No Switching Losses • Zero Forward Recovery • Higher Efficiency • High Frequency Operation

Contextual Info: CSD20120 Silicon Carbide Schottky Diode ZERO RECOVERY RECTIFIER VRRM=1200V IF=20A Features Benefits _ • 1200 Volt Schottky Rectifier • Replace Bipolar with Unipolar Rectifiers • Zero Reverse Recovery • Essentially No Switching Losses • Zero Forward Recovery

C2D20120

Abstract: D20120 C2D20120D
Contextual Info: C2D20120–Silicon Carbide Schottky Diode VRRM = 1200 V Zero Recovery Rectifier IF = 20 A Qc =122 nC Features • • • • • • • Package 1200-Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High-Frequency Operation Temperature-Independent Switching Behavior

CSD20030

Abstract: CSD20030D D 16027 G
Contextual Info: PRELIMINARY CSD20030 ZERO RECOVERYTM RECTIFIER Features Benefits _ • 300 Volt Schottky Rectifier • Replace Bipolar with Unipolar Rectifiers • Zero Reverse Recovery • Essentially No Switching Losses • Zero Forward Recovery • Higher Efficiency

CSD20120

Abstract: CSD20120D
Contextual Info: PRELIMINARY CSD20120 ZERO RECOVERYTM RECTIFIER Features Benefits _ • 1200 Volt Schottky Rectifier • Replace Bipolar with Unipolar Rectifiers • Zero Reverse Recovery • Essentially No Switching Losses • Zero Forward Recovery • Higher Efficiency

Contextual Info: SCS220KE2 SiC Schottky Barrier Diode Datasheet Outline VR 1200V IF 10A/20A* QC 34nC Per leg TO-247 *(Per leg / Both legs) (1) (2) (3) Inner circuit Features 1) Shorter recovery time 2) Reduced temperature dependence (1) Anode (2) Cathode (3) Anode

CSD20120

Abstract: CSD20120D CSD20120A
Contextual Info: PRELIMINARY CSD20120 ZERO RECOVERYTM RECTIFIER Features Benefits _ • 1200 Volt Schottky Rectifier • Replace Bipolar with Unipolar Rectifiers • Zero Reverse Recovery • Essentially No Switching Losses • Zero Forward Recovery • Higher Efficiency

Contextual Info: CSD20060 ZERO RECOVERYTM RECTIFIER Features Benefits _ • 600 Volt Schottky Rectifier • Replace Bipolar with Unipolar Rectifiers • Zero Reverse Recovery • Essentially No Switching Losses • Zero Forward Recovery • Higher Efficiency • High Frequency Operation

Contextual Info: CSD20060 ZERO RECOVERYTM RECTIFIER Features Benefits _ • 600 Volt Schottky Rectifier • Replace Bipolar with Unipolar Rectifiers • Zero Reverse Recovery • Essentially No Switching Losses • Zero Forward Recovery • Higher Efficiency • High Frequency Operation

SCS240KE2

Contextual Info: SCS240KE2 Datasheet SiC Schottky Barrier Diode Outline VR 1200V IF 20A/40A* QC 66nC Per leg TO-247 *(Per leg / Both legs) (1) (2) Features (3) Inner circuit 1) Shorter recovery time 2) Reduced temperature dependence (1) Anode (2) Cathode (3) Anode

D 16027 G

Contextual Info: CSD20060 ZERO RECOVERYTM RECTIFIER Features Benefits _ • 600 Volt Schottky Rectifier • Replace Bipolar with Unipolar Rectifiers • Zero Reverse Recovery • Essentially No Switching Losses • Zero Forward Recovery • Higher Efficiency • High Frequency Operation

Contextual Info: CSD10120D Silicon Carbide Schottky Diode ZERO RECOVERY RECTIFIER VRRM=1200V IF=10A Features Benefits _ • 1200 Volt Schottky Rectifier • Replace Bipolar with Unipolar Rectifiers • Zero Reverse Recovery • Essentially No Switching Losses • Zero Forward Recovery

Broken Conductor Detection for Overhead Line Distribution System

Abstract: rel 511 REL511 RTXP 18 cutout pa1400 RL110 RL220 U131 IEC 60255 power supply microscada abb
Contextual Info: REL 511 C*2.0 1 MAK 506 024-BEN Page 1 Issued Apri/1999 Status: New Data subjecllo change withoui nolice SE 95 02 07 Features .Line distance functionality comprises; -simultaneous measurement of the different phase. phase and phase. earth impedances with numerical measuring

Contextual Info: PRELIMINARY CSD20030 ZERO RECOVERYTM RECTIFIER Features Benefits _ • 300 Volt Schottky Rectifier • Replace Bipolar with Unipolar Rectifiers • Zero Reverse Recovery • Essentially No Switching Losses • Zero Forward Recovery • Higher Efficiency

C3D20060D

Abstract: C3D10060 C3D20060
Contextual Info: C3D20060D–Silicon Carbide Schottky Diode Z-Rec Rectifier VRRM = IF; TC<135˚C = 28 A Qc Features • • • • • • • 600 V = 50 nC Package 600-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation