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    Aim Dynamics PM-BUNDLE-E1000

    ACUCT RCT16-1000 POWER MONITORIN
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    Omega Engineering CL-300-CABLE-E-10

    Cable For Calibrator |Omega CL-300-CABLE-E-10
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    Bimba Manufacturing Company FM-0210-LEE10

    Cylinder, metric Flat One, dbl act,14mm Bore ; Stroke: 10 mm(s); Low F | Bimba FM-0210-LEE10
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    Bimba Manufacturing Company FSMS-505-LEE10

    Cylinder, Square Metric Flat-1 series | Bimba FSMS-505-LEE10
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    RS FSMS-505-LEE10 Bulk 5 Weeks 1
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    Bimba Manufacturing Company FM-3150-HDLEE100

    Cylinder, metric Flat One, dbl act,50mm Bore ; Stroke: 50 mm(s); He | Bimba FM-3150-HDLEE100
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    LEE10 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    LEE1015 Philips Semiconductors NPN microwave power transistor Original PDF
    LEE1015T Philips Semiconductors NPN microwave power transistor Original PDF
    LEE1015T Philips Semiconductors NPN microwave power transistor Scan PDF
    LEE1015TA Philips Semiconductors Microwave Linear Power Transistors Scan PDF

    LEE10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: LEE1010T Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)30 I(C) Max. (A)400m Absolute Max. Power Diss. (W)4.0 Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)


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    PDF LEE1010T

    Untitled

    Abstract: No abstract text available
    Text: LEE1015TA Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)22 V(BR)CBO (V)40 I(C) Max. (A)500m Absolute Max. Power Diss. (W)7.5 Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A)400u @V(CBO) (V) (Test Condition)40


    Original
    PDF LEE1015TA Freq860M

    LEE1015T

    Abstract: SC15 BP317
    Text: DISCRETE SEMICONDUCTORS DATA SHEET LEE1015T NPN microwave power transistor Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor


    Original
    PDF LEE1015T OT122A SCA53 127147/00/02/pp8 LEE1015T SC15 BP317

    MRF648

    Abstract: TPV3100 2SC2897 macom TP3034 SD1393 TP3008 tp9383 transistor 2sC636 MRF255 equivalent
    Text: Cross References June 1999 RF PRODUCTS P/N CROSS REFERENCE VENDOR NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC


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    PDF 2N5944 2N5945 2N5946 2N6082 2N6084 2N6439 2SC1257 2SC1258 2SC1259 2SC1605A MRF648 TPV3100 2SC2897 macom TP3034 SD1393 TP3008 tp9383 transistor 2sC636 MRF255 equivalent

    2SC636

    Abstract: 2sc635 MHW820-1 TP3008 2SC2897 SD1477 2sc2652 TP3034 2SC1804 SD1470
    Text: POWER RF CROSS REFERENCE INDUST RY STANDARD 2SC1257 2SC1258 2SC1259 2SC1605A 2SC1729 2SC1804 2SC1805 2SC1946 2SC1946A 2SC1967 2SC1968A 2SC2082 2SC2100 2SC2101 2SC2102 2SC2103A 2SC2105 2SC2181 2SC2282 2SC2290 2SC2420 2SC2508 2SC2510 SC2628 2SC2629 2SC2630 2SC2642


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    PDF 2SC1257 2SC1258 2SC1259 2SC1605A 2SC1729 2SC1804 2SC1805 2SC1946 2SC1946A 2SC1967 2SC636 2sc635 MHW820-1 TP3008 2SC2897 SD1477 2sc2652 TP3034 2SC1804 SD1470

    SD1446

    Abstract: SD2910 philips blx15 BLV36 BLW60C st cross reference blw97 SD4575 BLV103 MX0912B350Y
    Text: June 1999 ST CROSS REFERENCE WITH PHILIPS INDUSTRY PART NUMBER BGY916 BLF145 BLF175 BLF177 BLF242 BLF244 BLF245 BLF245B BLF248 BLF278 BLF348 BLF368 BLF378 BLF548 BLU10/12 BLU20/12 BLU30/12 BLU30/28 BLU45/12 BLU60/12 BLU60/28 BLU97 BLU99 BLV12 BLV13 BLV30 BLV31


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    PDF BGY916 BLF145 BLF175 BLF177 BLF242 BLF244 BLF245 BLF245B BLF248 BLF278 SD1446 SD2910 philips blx15 BLV36 BLW60C st cross reference blw97 SD4575 BLV103 MX0912B350Y

    2SC635

    Abstract: MHW820-1 2SC636 TP3008 sd1393 2sc1729 TP3034 SD1470 2SC2897 TP5051
    Text: POWER RF CROSS REFERENCE INDUSTRY STANDARD 2SC1257 2SC1258 2SC1259 2SC1605A 2SC1729 2SC1804 2SC1805 2SC1946 2SC1946A 2SC1967 2SC1968A 2SC2082 2SC2100 2SC2101 2SC2102 2SC2103A 2SC2105 2SC2181 2SC2282 2SC2290 2SC2420 2SC2508 2SC2510 SC2628 2SC2629 2SC2630 2SC2642


    Original
    PDF 2SC1257 2SC1258 2SC1259 2SC1605A 2SC1729 2SC1804 2SC1805 2SC1946 2SC1946A 2SC1967 2SC635 MHW820-1 2SC636 TP3008 sd1393 2sc1729 TP3034 SD1470 2SC2897 TP5051

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN microwave power transistor LEE1015T FEATURES PINNING - SOT122A • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR PIN • Interdigitated structure provides high emitter efficiency


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    PDF OT122A LEE1015T

    TRANSISTOR NPN 6822

    Abstract: 4046 application note philips 6822 npn transistor 6822 D 1398 Transistor 22716 transistor transistor 3305 d 1556 transistor IEC134 LEE1015TA
    Text: Philips Semiconductors Product specification -r ^ S > 3 -0 S > NPN silicon planar epitaxial microwave power transistor P H IL IP S INTERNATIONAL LEE1015TA 711Q82b OÜMbnG T5T • P H I N SbE DESCRIPTION APPLICAT IO N S Diffused emitter ballasting resistors providing excellent


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    PDF LEE1015TA 711G82b OT122 T-33-05 711002b 004b200 TRANSISTOR NPN 6822 4046 application note philips 6822 npn transistor 6822 D 1398 Transistor 22716 transistor transistor 3305 d 1556 transistor IEC134 LEE1015TA

    4046 application note philips

    Abstract: transistor 6822 TRANSISTOR NPN 6822 41413 transistor d 1556 1FT sot23-6 805 399-4 International Power Sources marking 683 choke IEC134
    Text: Product specification Philips Semiconductors NPN silicon planar epitaxial microwave power transistor PHILIPS INTERNATIONAL LEE1015TA 7 iio a 2 b SbE oa4bnG t5t « p h i n DESCRIPTION APPLICATIO N S Diffused emitter ballasting resistors providing excellent


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    PDF OT122 LEE1015TA 711002b 004tnG OT122 T-33-05 LEE1015TA 711Qfl2b 4046 application note philips transistor 6822 TRANSISTOR NPN 6822 41413 transistor d 1556 1FT sot23-6 805 399-4 International Power Sources marking 683 choke IEC134

    LEE1015T

    Abstract: SC15
    Text: Philips Semiconductors Product specification NPN microwave power transistor LEE1015T P IN N IN G -S O T122A FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR PIN • Interdigitated structure provides high emitter efficiency


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    PDF LEE1015T OT122A LEE1015T SC15

    Untitled

    Abstract: No abstract text available
    Text: PEEL 18CV8 -5/-7/-10/-15/-25 CMOS Programmable Electrically Erasable Logic Device Features • Multiple Speed, Power, Temperature Options — Speeds ranging from 5ns to 25ns — Power as low as 37mA at 25MHz — Commercial and industrial versions available


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    PDF 18CV8 25MHz 20-pin PEEL18CV8P-25 300mil 10nstpd

    Untitled

    Abstract: No abstract text available
    Text: Advanced Commercial INC. PEEL 22LV1 OAZ -25 CMOS Programmable Electrically Erasable Logic Device Features Architectural Flexibility — 133 product term x 44 input AND array — Up to 22 inputs and 10 I/O pins — 12 possible macrocell configurations — Synchronous preset, asynchronous clear


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    PDF 22LV1 24-pin 28-pin 22LV10AZ PEEL22LV10AZP-25 PEEL22LV1OAZJ-25 PEEL22LV10AZS-25 300mil

    Untitled

    Abstract: No abstract text available
    Text: ¡ET Preliminary Commercial INC. PEEL 20V8 -5/-7/-10/-15/-25 CMOS Programmable Electrically Erasable Logic Features Compatible with Popular 20V8 Devices — 20V8 socket and function compatible — Programs with standard 20V8 JEDEC file — 24-pin DIP/SOIC, 28-pin PLCC packages


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    PDF 24-pin 28-pin 0G01bfi3 40-Pin

    LFE15

    Abstract: LAE4001R BLS2731-50 BLS2731-10
    Text: Philips Semiconductors Microwave Transistors Index ALPHANUMERIC INDEX Types added to the range since the last issue of Handbook SC15 1995 issue are shown in bold print. TYPE PAGE TYPE PAGE BLS2731-10 30 PLB16012U 247 BLS2731-20 33 PLB16030U 252 BLS2731-50


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    PDF BLS2731-10 BLS2731-20 BLS2731-50 BLS2731-110 BLS2731-150 LBE2003S LBE2009S LFE15600X LLE15180xX LLE15370X LFE15 LAE4001R

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Concise Catalogue 1996 DISCRETE SEMICONDUCTORS Microwave transistors RF & MICROWAVE SEMICONDUCTORS & MODULES CONTINUOUS POWER TYPES f ^CE *C P r L1 ^ Gp° 3 GHz) (V) (mA) (mW) (dB) 1 2 2 2 2.1 2.1 2.1 2.3 2.3 4 4 4.2 4.2 4.2 20 18


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    PDF LEE1015TA LBE2003S LBE2009S LCE2009S LTE21009R LTE21015R LTE21025R LWE2010S LWE2015R LAE4001R

    1B200Y

    Abstract: MRB11040W
    Text: 68 RF/Microwave Devices M icrow ave Transistors, Pulsed Power cont. Type No. Package Outline (V) tp @ (us) 40 40 40 40 40 40 40 40 24 40 40 24 50 45 50 50 50 50 50 50 50 50 50 50 50 50 50 vcc f (GHz) Duty Cycle Pl TTC (% ) (W) GP (dB) (% ) 100 100 100 100


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    PDF RZ2731B16W RZ3135B14W RZ2731B32W RZ3135B28W RZ2731B48W RZ3135B42W RZ2731B60W RZ3135B50W RV3135B5X RX2731B90W 1B200Y MRB11040W

    1721E50R

    Abstract: Marking Codes Philips MARKING CODE 2327E40R marking codes transistors LAE4001R transistor 502 r8 marking marking Code philips
    Text: Philips Semiconductors Microwave Transistors Marking codes MARKING CODES The microwave transistors in this book are normally marked with manufacturer’s name or trademark, type designation and lot identification code. If space on the transistor package is insufficient for full type designation, the following marking


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    PDF LAE4001R LAE4002S LBE2003S LBE2009S LCE2009S LEE1015T LTE21009R LTE21015R LTE21025R LTE42005S 1721E50R Marking Codes Philips MARKING CODE 2327E40R marking codes transistors transistor 502 r8 marking marking Code philips