LED565-33U
Abstract: No abstract text available
Text: LED565-33U TECHNICAL DATA Visible LED, 3 mm GaP LED565-33U is a GaP LED mounted on a lead frame with a clear epoxy lens. On forward bias it emits a band of visible light with a peak at 565 nm. Specifications • • • • Structure: GaP Peak Wavelength: typ. 565 nm
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LED565-33U
LED565-33U
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B5B-433-014
Abstract: No abstract text available
Text: B5B-433-014 TECHNICAL DATA LED, 5 mm GaP B5B-433-014 is a GaP LED mounted on a lead frame with a clear epoxy lens. On forward bias it emits a band of green light with a peak at 572 nm. Specifications • • • • Structure: GaP Peak Wavelength: typ. 572 nm
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B5B-433-014
B5B-433-014
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MT240-G-A
Abstract: No abstract text available
Text: 3 Northway Lane North Latham,New York 12110. Tollfree:1.800.984.5337 Phone:1.518.956.2980 Fax:1.518.785.4725 Http://www.marktechopto.com SPECIFICATION PART NO. : MT240-G-A 3.0mm ROUND LED LAMP 3.0mm ROUND LED LAMP MT240-G-A Description This green lamp is made with GaP/GaP super red chip and green
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MT240-G-A
MT240-G-A
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Untitled
Abstract: No abstract text available
Text: LED430/565-04A TECHNICAL DATA Dual LED, 5 mm package GaN, GaP LED430/565-04A is a bi-color LED, containing a GaN 430 nm and GaP (565 nm) LED chip die, which are mounted on a lead frame with a clear epoxy lens. On forward bias, it emits a power radiation of typical 0.4 mW and 0.2 mW at peak wavelengths of
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LED430/565-04A
LED430/565-04A
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Untitled
Abstract: No abstract text available
Text: LED565/660-04A TECHNICAL DATA Dual LED, 5 mm package GaP, DDH AlGaAs LED565/660-04A is a bi-color LED, containing a GaP 565 nm and DDH AlGaAs (660 nm) LED chip die, which are mounted on a lead frame with a clear epoxy lens. On forward bias, it emits a power radiation of typical 0.2 mW and 4.0 mW at peak wavelengths of
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LED565/660-04A
LED565/660-04A
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L555-30K42
Abstract: 555nm
Text: epitex Opto-Device & Custom LED Φ5 STEM TYPE LED LAMP L555-30K42 L555-30K42 stem type LED with unspherical lens L555-30K42 is GaP LED mounted on TO-46 stem with unspherical glass lens, being designed for sensing devices. On forward bias, it emits a spectral band of radiation, which peaks at 555nm.
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L555-30K42
L555-30K42
555nm.
555nm
J-6512.
555nm
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L610-30M32
Abstract: 610nm
Text: epitex Opto-Device & Custom LED φ5 STEM TYPE LED LAMP L610-30M32 L610-30M32 stem type LED with glass ball lens L610-30M32 is GaP LED mounted on TO-18 stem with glass ball lens, being designed for sensing devices. On forward bias, it emits a spectral band of radiation, which peaks at 610nm.
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L610-30M32
L610-30M32
610nm.
610nm
J-6512.
610nm
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L555-30M32
Abstract: 555nm
Text: epitex Opto-Device & Custom LED φ5 STEM TYPE LED LAMP L555-30M32 L555-30M32 stem type LED with glass ball lens L555-30M32 is GaP LED mounted on TO-18 stem with glass ball lens, being designed for sensing devices. On forward bias, it emits a spectral band of radiation, which peaks at 550nm.
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L555-30M32
L555-30M32
550nm.
L550-30M32
555nm
J-6512.
555nm
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110MT
Abstract: TSZ22111
Text: TYPE PRODUCTS Surface Mount Chip LED PAGE 1. CONSTRUCTION 2. USAGE Source of light for display unit. 3. DIMENSIONS See Figure.1 4. ABSOLUTE MAXIMUM RATINGS GaP green surface mount LEDs with reflector packaged with colorless epoxy. 6. ELECTRO−CHARACTERISTICS
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SML110MT
TSZ2211104
110MT
TSZ22111
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TSZ22111
Abstract: No abstract text available
Text: TYPE PRODUCTS Surface Mount Chip LED PAGE 1. CONSTRUCTION 2. USAGE Source of light for display unit. 3. DIMENSIONS See Figure.1 4. ABSOLUTE MAXIMUM RATINGS GaAsP on GaP orange surface mount LEDs with reflector packaged with colorless epoxy. 6. ELECTRO−CHARACTERISTICS
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SML110DT
TSZ2211104
TSZ22111
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LED43
Abstract: No abstract text available
Text: LED43 v 2.0 24.11.2014 Description LED43 series are fabricated from narrow band-gap InAsSb/InAsSbP heterostructures lattice matched to InAs substrate. This Mid-IR LED provides a typical peak wavelength of 4.15 µm and optical power of typ. 0.01 mW qCW. It comes in TO-18 package a with a glass window.
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LED43
LED43
150mA
200mA
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LED21
Abstract: No abstract text available
Text: LED21 v 1.0 12.02.2014 Description LED21 series are fabricated from narrow band-gap GaInAsSb/AlGaAsSb heterostructures lattice matched to GaSb substrate. This Mid-IR LED provides a typical peak wavelength of 2.15 µm and optical power of typ. 1 mW qCW. It comes in TO-18 package a with a glass window.
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LED21
LED21
150mA
200mA
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SCD2500-3
Abstract: short distance measurement PSD ODC2600-40 CE2500 CE2500-3 PC2500-3 CE1800-3
Text: Laser micrometer thru-beam for fast measurements - CCD micrometer Fast laser micrometer with wide measuring range for high-speed measurement of gap, segment, diameter, dimension, position in automation, production and quality control Laser micrometer, CCD micrometer and light-band, light curtain with LED, optical
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Y9761154-A030018JKR
SCD2500-3
short distance measurement PSD
ODC2600-40
CE2500
CE2500-3
PC2500-3
CE1800-3
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MA 8910
Abstract: "PIR wiring diagram PIR datasheet pir detector pir sensor infrared activated device Carlo movement sensor pir 8910 PIR sensor module
Text: PIR Sensor Type G 8910 2129 • Passive infrared detector PIR • Detects movement by e.g. a person • 2-channel transmitter • Indoor applications • Operating distance: 10 m • Operating angle: 90° • Walk test: LED indication • Channel coding by GAP 1605
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"PIR wiring diagram
Abstract: movement sensor pir PIR datasheet pir 5
Text: Du line PIR Sensor Type G 8110 1127 Fieldbus Installationbus • Passive infrared detector PIR • Detects movement by e.g. a person • Indoor applications • Operating distance: Max. 6 m • Operating angle: 90° • Walk test: LED indication • Channel coding by GAP 1605
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Untitled
Abstract: No abstract text available
Text: Part Number: XRS2LUR11D T-1 3mm BI-LEVEL LED INDICATOR Features z I.C. COMPATIBLE. z BLACK CASE ENHANCES CONTRAST RATIO. z WIDE VIEWING ANGLE. z HIGH RELIABILITY LIFE MEASURED IN YEARS. z HOUSING MATERIAL: PPA. z HIGH TEMPERATURE RESISTANT HOUSING. z HIGH GLASS TRANSITION TEMPERATURE EPOXY.
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XRS2LUR11D
XDSB0232
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Untitled
Abstract: No abstract text available
Text: XRS2LUY11D Part Number: T-1 3mm BI-LEVEL LED INDICATOR Features z I.C. COMPATIBLE. z BLACK CASE ENHANCES CONTRAST RATIO. z WIDE VIEWING ANGLE. z HIGH RELIABILITY LIFE MEASURED IN YEARS. z HOUSING MATERIAL: PPA. z HIGH TEMPERATURE RESISTANT HOUSING. z HIGH GLASS TRANSITION TEMPERATURE EPOXY.
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XRS2LUY11D
XDSB0233
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Untitled
Abstract: No abstract text available
Text: Part Number: XRS2LUG11D T-1 3mm BI-LEVEL LED INDICATOR Features z I.C. COMPATIBLE. z BLACK CASE ENHANCES CONTRAST RATIO. z WIDE VIEWING ANGLE. z HIGH RELIABILITY LIFE MEASURED IN YEARS. z HOUSING MATERIAL: PPA. z HIGH TEMPERATURE RESISTANT HOUSING. z HIGH GLASS TRANSITION TEMPERATURE EPOXY.
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XRS2LUG11D
XDSA9438
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Untitled
Abstract: No abstract text available
Text: Part Number: www.SunLED.com SUR36D-1 2x3mm RECTANGULAR LED LAMP Features GLOW POWER CONSUMPTION. GRELIABLE AND RUGGED. GEXCELLENT UNIFORMITY OF LIGHT OUTPUT. GSUITABLE FOR LEVEL INDICATOR. GHIGH GLASS TRANSITION TEMPERATURE EPOXY. GRoHS COMPLIANT. Notes: 1. All dimensions are in millimeters inches .
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SUR36D-1
SDSA4778
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Untitled
Abstract: No abstract text available
Text: IN6610 HI-BRITE h e rm e tic 1 N6611 LED INDICATORS m u OPTOELECTRONIC PRODUCTS DIVISION DESCRIPTION: The red and yellow indicators utilize a high efficiency GaAsP on GaP LED, w hile the green utilizes a GaP on GaP LED. These LED’s are herm etically sealed in TO-46 packages w ith a clear glass lens which provides improved view ability in bright
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IN6610
N6611
bll2b40
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Untitled
Abstract: No abstract text available
Text: 1N6609 1N6610 1N6611 mss H I-B R IT E H E R M E T IC L E D IN D IC A T O R S O P T O E LE C T R O N IC PRODUCTS D IVISIO N D E S C R IP TIO N : The red and yellow indicators utilize a high efficiency GaAsP on GaP LED, while the green utilizes a GaP on GaP LED. These
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1N6609
1N6610
1N6611
P0/521
M19500/519
bll2b40
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SML-410MW
Abstract: information lot TSZ22111-04
Text: nnH rn PRODUCTS TYPE Surface Mount _Chip LED PAGE SML-410MW 1. CONSTRUCTION GaP green surface mount LEDs package with white diffused epoxy. 2. USAGE Source of light for display unit. 3. DIMENSIONS See Figure. 1 4. ABSOLUTE MAXIMUM RATINGS 5. 6. Power Dissipation
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SML-410MW
TSZ22111-04
information lot
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Untitled
Abstract: No abstract text available
Text: GaAsP Photodiodes Diffusion Types Dim ensional Outline (P.46 to 50V Package W indow Material *1 | T ype No. Active Area Size (mm) Area X Peak Sensitivity Wavelength Xp (mm2) (nm) (nm) Effective Spectral Response Range Photo Sensitivity S (A/W) Xp GaP LED
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G1117
G1118
G1120
G2711-01
KGPDB0004
KGPDB0005EA
KGPDB0007EA
KGPDB0008EA
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G1122
Abstract: G1118 G1117
Text: HAMAMATSU CORP tn DE ODOaDDb T GaAsp Photodiodes 422J96Û 9 HAM AM ATSU 890 CORP Photosensitive Surface Spectral Response T *- H i - 5" I Characteristics 25°C Package (mm) (mm2) (nm) (nm) Short Circuit Current Peak Wave length 560nm • GaP LED lsh, 1(
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145Ec
560nm-GaP
633nm
G1115
G1116
G1117
G1118
G1120
G1118
G1120
G1122
G1117
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