1n4007 t7
Abstract: t04 68 3 pin controller 526Ch diode T35 12H E1 PCM encoder t04 68 3 pin diode L3235N STLC3080 STLC5048 TQFP64
Text: STLC5048 Fully programmable four-channel codec and filter Features • Fully programmable monolithic 4-channel codec/filter ■ Single +3.3 V supply ■ A/m law programmable ■ Linear coding 16 bits option ■ PCM highway format automatically detected:
|
Original
|
PDF
|
STLC5048
TQFP64
10x10x1
STLC5048
1n4007 t7
t04 68 3 pin controller
526Ch
diode T35 12H
E1 PCM encoder
t04 68 3 pin diode
L3235N
STLC3080
TQFP64
|
power supply DVD schematic diagram
Abstract: IC351 ic811 ic604 dvd drive schematic ic806 power supply schematic diagram S2LA20 IC-303 d313
Text: DVP-C600D RMT-D104A SERVICE MANUAL US Model Canadian Model Mexican Model SPECIFICATIONS CD/DVD PLAYER MICROFILM DVP-C600D TK-48 RF, SERVO 1 SCHEMATIC DIAGRAM – Ref. No.: TK-48 board; 3,000 series – • Waveforms 1 IC006 %¡ – % (DVD play) 4 IC005 !£ (CD play)
|
Original
|
PDF
|
DVP-C600D
RMT-D104A
TK-48
TK-48
IC006
IC005
power supply DVD schematic diagram
IC351
ic811
ic604
dvd drive schematic
ic806
power supply schematic diagram
S2LA20
IC-303
d313
|
transistor C3866
Abstract: Zener PH SEC E13009 ups circuit schematic diagram 1000w E13007 2 E13007 C3866 power transistor texas ttl 74L505 Transistor C3246
Text: BID CΚΤ DOLLY L IST L OGO LIST SA F E TY & RELIA ΒL TY ΤΕΚ PIN SYSTE M DIGITA L IC's MEMORIES, MOS CMOS .EC L , TT L MICR OP R OC E SSOR SPE CIA L FUN CTION IC's DIGITAL l LINE AR K ARR AYS LIN E A R IC's (PUR CH ) ΤΕΚ-MADE IC's IC's INDEX (COL ORE D PGS)
|
Original
|
PDF
|
|
W184
Abstract: W185 W185-5 hjc 0.1uf
Text: W185 Six Output Peak Reducing EMI Solution Features Table 1. Modulation Width Selection • Cypress PREMIS family offering • Generates an EMI optimized clocking signal at the output • Selectable output frequency range • Six 1.25%, 3.75%, or 0% down or center spread outputs
|
Original
|
PDF
|
24-pin
W185-5
W184
W185
W185-5
hjc 0.1uf
|
W184
Abstract: W185
Text: W185 Six Output Peak Reducing EMI Solution Features Table 1. Modulation Width Selection • Cypress PREMIS family offering • Generates an EMI optimized clocking signal at the output • Selectable output frequency range • Six –1.25%, –3.75%, or 0% down spread outputs
|
Original
|
PDF
|
24-pin
W184
W185
|
Untitled
Abstract: No abstract text available
Text: W185 Six Output Peak Reducing EMI Solution Features Table 1. Modulation Width Selection • Cypress PREMIS family offering • Generates an EMI optimized clocking signal at the output • Selectable output frequency range • Six –1.25%, –3.75%, or 0% down spread outputs
|
Original
|
PDF
|
24-pin
|
BY236
Abstract: BY235 d25n12 PBY285 KD202A D237A D223B diode drr204 Diode D25N4 PBY267
Text: a m a t e u m Lars Grallert Diodenvergleichsliste p e U ie 247 electrónica •Band 247 LA R S G R A L L E R T Diodenvergleichsliste M ILITÄ R V E R L A G D ER D EU TSCH EN D EM OKRATISCH EN R EP U B L IK G r a lle r t, L . : D io d e n v e rg le ic h s liste . B e r lin : M ilitä rv e rla g d e r D D R V E B , 1 9 9 0 . 112 S ., 127 B ild e r - ( e le c tr ó n ic a 2 4 7 )
|
OCR Scan
|
PDF
|
|
13001 6D 331
Abstract: 13001 8D 331 13001 s 8d
Text: BUCHANAN A ll T y c o E le c tr o n ic s P a r t N u m b e r s w it h o u t a c o r r e s p o n d in g B U C H A N A N P a r t N u m b e r a r e lis te d a s b a s e p a r t n u m b e r s o n ly . C o m p le te p a r t n u m b e r s w ith p r e fix e s a n d / o r s u ff ix e s a r e s h o w n o n t h e
|
OCR Scan
|
PDF
|
|
diode D214
Abstract: ZX-08
Text: 4ÔSSMS2 QQlbb72 Q'ìS International ¡i»r 1Rectifier INR s e r ie s irk .26, .41, .56, .71, .91 ADD-A-pak Power Modules THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR INTERNATIONAL RECTIFIER Features I E le c tric a lly is o la te d base p la te • 3 5 0 0 V RMS is o la tin g v o lta g e
|
OCR Scan
|
PDF
|
QQlbb72
diode D214
ZX-08
|
thyristor YS 160 004
Abstract: HIGH VOLTAGE THYRISTOR D183 D184 D185 D186 D187 D188 irf 940 lem current lt 100
Text: International m§Rectifier s e r ie s irk.L 56 , .L7i, .l9i FAST RECOVERY DIODES ADD-A-pak Power Modules 55A 70A 90A Features • F a s t re c o v e ry tim e c h a ra c te ris tic s ■ E le c tric a lly iso lated b a s e p la te ■ S ta n d a rd J E D E C p a c k a g e
|
OCR Scan
|
PDF
|
30ohms.
65ohms
thyristor YS 160 004
HIGH VOLTAGE THYRISTOR
D183
D184
D185
D186
D187
D188
irf 940
lem current lt 100
|
IPM module lg
Abstract: diode gi 9300 irf 5110 ScansUX7 D183 D184 D185 HALF WAVE 45 E 57 20-C1V D187 D188
Text: International m§Rectifier s e r ie s irk.L 56 , .L7i, .l9i FAST RECOVERY DIODES ADD-A-pak Power Modules 55A 70A 90A Features • F a s t re c o v e ry tim e c h a ra c te ris tic s ■ E le c tric a lly iso lated b a s e p la te ■ S ta n d a rd J E D E C p a c k a g e
|
OCR Scan
|
PDF
|
30ohms.
65ohms
IPM module lg
diode gi 9300
irf 5110
ScansUX7
D183
D184
D185
HALF WAVE 45 E 57 20-C1V
D187
D188
|
2114 static ram
Abstract: ic 2114 RAM 2114 ci 2114 memory ic 2114 2114 2114 ram 2114 static ram ic memory 2114 P2114
Text: 2114 4096 Bit 1024x4 NMOS Static RAM Ö M Ü f^ D IL FEATURES D E S C R IP T IO N • • • • • • • • The 2114 is a 4096-bit s ta tic R andom A cce ss M em ory organized 1024 w ord s x 4 bits. The s to ra g e c e lls and decode and co n tro l c irc u itry are c o m p le te ly s ta tic , th e re fo re no
|
OCR Scan
|
PDF
|
1024x4)
2114L)
4096-bit
2114L2
2114L3
2114L
2114 static ram
ic 2114
RAM 2114
ci 2114
memory ic 2114
2114
2114 ram
2114 static ram ic
memory 2114
P2114
|
transistor d2118
Abstract: D2118 D2118 transistor
Text: 2SD2118F5 Transistor, NPN Features Dimensions Units : mm available in CPT F5 (SC-63) package • package marking: D2118-*Q, where ★ is hFE code and □ is lot number • excellent current-to-gain characteristics • low collector saturation voltage, typically VCE(sat) = 0.3 V for
|
OCR Scan
|
PDF
|
2SD2118F5
SC-63)
D2118-
2SD2118F5
transistor d2118
D2118
D2118 transistor
|
transistor d2118
Abstract: No abstract text available
Text: 2SD2118F5 Transistor, NPN Features Dimensions Units : mm • available in CPT F5 (SC-63) package • package marking: D2118*Q , where ★ is hFE code and □ is lot number • excellent current-to-gain characteristics • 2SD2118F5 (CPT F5) 6.5 ± 0.2 2.3
|
OCR Scan
|
PDF
|
2SD2118F5
SC-63)
D2118
transistor d2118
|
|
|
la 78042
Abstract: uPI Semiconductor Corp western 142c 4SH 0202 K 176 LE, K 561 LN UCS-51 a295 ac hen nsd
Text: in te r APPLICATION BRIEF AB-41 Septem ber 1988 lntel C o rp o ra tio n m akes no w a rranty for the use o f its p ro d u c ts and assurnes no responsibility fo r any erro rs w hich m ay app ear in th is d o c u m e n t nor d o e s it m a k e a c o m m itm e n t to u p d a te the in fo rm a tio n c o n ta in e d herein
|
OCR Scan
|
PDF
|
AB-41
696GGG
la 78042
uPI Semiconductor Corp
western 142c
4SH 0202
K 176 LE, K 561 LN
UCS-51
a295 ac hen nsd
|
THERMISTORS nsp 037
Abstract: Thyristor TAG 9118 ICA 0726 0148 Transformer a1273 y k transistor AM97C11CN transistor SK A1104 PM7A2Q B8708 bzy79 yh 5032
Text: INDEX OF COMPONENTS A Section/Page No. A.C. Adaptor. Adaptor Kits BNC e tc . Adhesive Tapes. Adhesives, Various. Aerosols.
|
OCR Scan
|
PDF
|
200X300X360m
THERMISTORS nsp 037
Thyristor TAG 9118
ICA 0726 0148 Transformer
a1273 y k transistor
AM97C11CN
transistor SK A1104
PM7A2Q
B8708
bzy79
yh 5032
|
intel 2114 static ram
Abstract: ac 1501-50 M2114L2 intel 2114 M2114L MD2114 MD2114L2 m2114 MD2114L MD2114L3
Text: DfflÜ^DIL M 2114L 4 0 9 6 B it 1 0 2 4 x 4 NMOS S ta tic RAM FEATURES DESCRIPTION • • • • • • • The M2114L is a 4096-bit static Random Access Memory organized 1024 words x 4 bits. The storage cells and decode and control circuitry are completely
|
OCR Scan
|
PDF
|
M2114L
1024x4)
-495imW
M2114
4096-bit
M2114L2
M2114L3
M2114L
intel 2114 static ram
ac 1501-50
M2114L2
intel 2114
MD2114
MD2114L2
m2114
MD2114L
MD2114L3
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MOCD211/D SEMICONDUCTOR TECHNICAL DATA Dual Channel Small Outline Optoisolators MOCD211 Transistor Output [C TR = 20% Min] The MOCD211 device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a
|
OCR Scan
|
PDF
|
MOCD211/D
MOCD211
MOCD211
|
Untitled
Abstract: No abstract text available
Text: VT6288H L • VT6289H(L) ADVANCE INFORMATION VT6290H • VT6291H V L S I T e c h n o lo g y inc. 1 6 ,3 8 4 x 4 S R A M FEATURES • High-speed access and cycle times: 15, 20, 25, and 35 ns • 24-lead, 300 mil SOJ package (VT6288H/88HL, VT6289H/89HL, VT6290H, VT6291H)
|
OCR Scan
|
PDF
|
VT6288H
VT6289H
VT6290H
VT6291H
24-lead,
VT6288H/88HL,
VT6289H/89HL,
VT6290H,
VT6291H)
VT6289H/89HL
|
Untitled
Abstract: No abstract text available
Text: HN29W25611 Series 256M AND type Flash Memory More than 16,057-sector 271,299,072-bit HITACHI ADE-203-995 (Z) Preliminary, Rev. 0.0 Jan. 8, 1999 Description The Hitachi HN29W25611 Series is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.3 V and 5 V power supply. The
|
OCR Scan
|
PDF
|
HN29W25611
057-sector
072-bit)
ADE-203-995
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA TC51V8512AF/AFT/ATR-12/15 P R E L IM IN A R Y SILICON GATE CMOS 524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM D e s c rip tio n The TC51V8512AF is a 4M bit high speed CMOS pseudo static RAM organized as 524,288 words by 8 bits. The TC51V8512AF utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power
|
OCR Scan
|
PDF
|
TC51V8512AF/AFT/ATR-12/15
TC51V8512AF
TC51V8512AF
D-212
SQ17E4Ã
D-213
|
TRANSISTOR D206
Abstract: 8512A transistor D209 LA 8512 TC51V8512
Text: TOSHIBA TC51V8512AF/AFT/ATR-12/15 PRELIMINARY SILICON GATE CMOS 524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The T C 5 1V 8512 A F is a 4M bit high speed C M O S pse udo static RAM organized as 5 2 4 ,2 8 8 w o rd s by 8 bits. The T C 51V 8512A F
|
OCR Scan
|
PDF
|
TC51V8512AF/AFT/ATR-12/15
D-212
D-213
TRANSISTOR D206
8512A
transistor D209
LA 8512
TC51V8512
|
le2m
Abstract: BD251
Text: LE2M Z LF3347 Ijh v iü l- S IN u u H H ü H A High-Speed Image Filter with Coefficient RAM I hl □ 83 M H z D ata In p u t and C o m p u ta tio n Rate □ Four 1 2 x 1 2-bit M ultipliers w ith Individual Data and Coefficient Inputs □ Four 256 x 12-bit Coefficient Banks
|
OCR Scan
|
PDF
|
LF3347
12-bit
32-bit
16-bit
120-pin
LF3347
le2m
BD251
|
ci 2114
Abstract: 2114L-3 2114L2 2114 static ram 2114 2114 static ram diagram 2114 ram RAM 2114 memory 2114 D2114L RAM
Text: 2114 4 0 9 6 Bit 1 0 2 4 x 4 NMOS Static RAM M1KR5H. D E S C R IP T IO N FEA TU R ES • Cycle Time Equal to Access Time • Completely Static • No Clock Required • Common Data Input and Output • TTL Compatible Inputs and Outputs • 883A Class B Processing Available
|
OCR Scan
|
PDF
|
1024x4)
2114L)
4096-bit
2114L2
2114L3
2114L
ci 2114
2114L-3
2114L2
2114 static ram
2114
2114 static ram diagram
2114 ram
RAM 2114
memory 2114
D2114L RAM
|
