LD261 DIODE Search Results

LD261 DIODE Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
CUZ24V		Toshiba Electronic Devices & Storage Corporation	Zener Diode, 24 V, USC
XCUZ13V		Toshiba Electronic Devices & Storage Corporation	Zener Diode, 13.0 V, USC
XCUZ36V		Toshiba Electronic Devices & Storage Corporation	Zener Diode, 36.0 V, USC
CUZ12V		Toshiba Electronic Devices & Storage Corporation	Zener Diode, 12 V, USC
MUZ5V6		Toshiba Electronic Devices & Storage Corporation	Zener Diode, 5.6 V, USM

LD261 DIODE Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
TAA761A Abstract: TDA4050B BPW32 TAA761 FLH101 TCA335A tda4050 TCA965 equivalent tca965 transistor bc238 Text: Light Activated Switches Appnote 33 able and adjustable in its position an efficiency maximum can be achieved. Miniature Light Barrier for a Shaft Position Encoder or a Revolution Counter Figure 2. Miniature light barriers are required for shaft position encoders,	Original	PDF	LD261 BPX81. TAA761A TDA4050B BPW32 TAA761 FLH101 TCA335A tda4050 TCA965 equivalent tca965 transistor bc238
T20 96 diode Abstract: LD260 LD261-5/6 LD262 LD261 diode Text: LD 261 LD 262-269/260 SINGLE DIODE ARRAYS Infrared Emitters Dimensions in Inches mm GE006367 FEATURES • GaAs IR emltterdiode, made In a liquid phase epitaxy process • High reliability • Matches BPX 80-89 photofransistors • Availability: "A” Dimension (in mm)	OCR Scan	PDF	GE006367 LD261 LD262 LD263 LD260 electronic50 lp-50 LD260-26B T20 96 diode LD261-5/6 LD261 diode
s75 transistor Abstract: BPX81-4 Diode s75 BPX-80 BPX81 BPX80 Text: BPX81 ARRAYS BPX82-89, 80 SIEMENS SINGLE DIODE 2-10 DIP SILICON NPN PHOTOTRANSISTOR Ràckage Dimensions in Inches mm .094 (2.4) .083(2.1) Dimension “A". Mm. Max, Part Ni>. BPX82 .177 (4.6) BPX89 :» *X 8 4 •BPX85 8PX 86 •S75 (7.0) 3Î7 W 47« (12.1)	OCR Scan	PDF	BPX81 BPX82-89, BPX82 BPX89 BPX85 BPX88 PPX80 Photocurrent-BPX81 nt-BPX81 BPX81. s75 transistor BPX81-4 Diode s75 BPX-80 BPX80
Untitled Abstract: No abstract text available Text: SIEMENS LD 261 LD 262—269/260 s in g l e d io d e arrays Infrared Emitters Dimensions in inches mm APPLICATIONS • Miniature photointerrupters • Punched tape-readers • Industrial electronics • For control and drive circuits DESCRIPTION The LD260-269 series, GaAs infrared emitting diodes,	OCR Scan	PDF	LD260-269 lE/lE100 OHR0I039 LD260-269
SFH317-2 Abstract: SFH317-4 SFH501-2 SFH317F-4 sfh309-2 BP103-5 SFH309-3 BPY62-2 SFH317 LPT 80a Text: Phototransistors Package Outline Part Typ* H«K Photocurrant Angl« XuSSOmn C ofttdor Emftter Vce-SV » V lreE(niA) SFH320-2 SFH320-3 L fc SFH320F-2 SFH320F-3 16-32 JiA SMTTOP-LED SMTTOPLED, daylight filter ±60” BP103B-4 SFH303-2 SFH303-3 SFH303-4 SFH303F-2	OCR Scan	PDF	SFH320-2 SFH320-3 SFH320F-2 SFH320F-3 BP103B-2 BP103B-3 BP103B-4 SFH303-2 SFH303-3 SFH303-4 SFH317-2 SFH317-4 SFH501-2 SFH317F-4 sfh309-2 BP103-5 SFH309-3 BPY62-2 SFH317 LPT 80a
8PX43 Abstract: SFH415T GKDb L81a SFH402-2 SFH910 SFH485 SFH462 sfh481-3 LD275 Text: Infrared Emitters Radiant Intensity Package Outline Part Number Package TVP» Half Angle Surga Currant Features Page A SFH420 SMTTOPLED ±60" SFH421 SMTTOPLED ± 60 ° 2.5-5 too GaAs, 950 nm. On tape and reel. 7-25 4-8 100 GaAIAs, 880 nm. On tape and reel.	OCR Scan	PDF	SFH420 SFH421 BP104 BP103. SFH205, BP104, BP103B. LD271 LD271L LD274-1 8PX43 SFH415T GKDb L81a SFH402-2 SFH910 SFH485 SFH462 sfh481-3 LD275
TIL702 Abstract: TIL701 TIL393-9 til78 phototransistor TIL81 til312 7 segment display TIL78 TIL393 TIL313 TIL393-6 Text: m The Optoelectronics Data Book for Design Engineers T e x a s In s t r u m e n t s IMPORTANT NOTICES Texas Instruments reserves the right to make changes at any time in order to improve design and to supply the best product possible. Tl cannot assume any responsibility for any circuits shown or	OCR Scan	PDF	LCC4230-D EPN4050 TIL702 TIL701 TIL393-9 til78 phototransistor TIL81 til312 7 segment display TIL78 TIL393 TIL313 TIL393-6