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    LD SMD TRANSISTOR LD 33 Search Results

    LD SMD TRANSISTOR LD 33 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    LD SMD TRANSISTOR LD 33 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HS-4424BRH

    Abstract: HS-4424RH HS-26CLV32RH IS-705RH HS-26CLV31RH HS-26CLV32 HS-4080ARH 5962-95694 transistor smd xb HS-1840ARH
    Text: Intersil Solutions for Space Products 2009 Product Selection Guide Contents Intersil's Space Solutions - 3 Intersil's Approach to Radiation Environments in Space - 4 Intersil's Radiation Hardening Process- 5


    Original     		PDF BR-558 HS-4424BRH HS-4424RH HS-26CLV32RH IS-705RH HS-26CLV31RH HS-26CLV32 HS-4080ARH 5962-95694 transistor smd xb HS-1840ARH

    5962R9665101VXC

    Abstract: 5962F9568902VXC 5962F0151001VXC 5962F9568901VXC 5962F9666302VXC 5962R9563701VXC 5962F9954701VXC 5962R9853301VXC HS9-26CT32RH-Q 5962F9956002VXC
    Text: Intersil Solutions for Space Products www.intersil.com/space   www.intersil.com/space Intersil Space ICs High Performance Analog Closest approach to Jupiter on March 5, 1979. Flies by Saturn on November 12, 1980. Voyager 1 passes Pioneer 10 to become the most distant


    Original     		PDF BR-558 5962R9665101VXC 5962F9568902VXC 5962F0151001VXC 5962F9568901VXC 5962F9666302VXC 5962R9563701VXC 5962F9954701VXC 5962R9853301VXC HS9-26CT32RH-Q 5962F9956002VXC

    ISL-706

    Abstract: 5962R11212 HS-26CLV32RH ISL706 IS1825 IC free Intersil HS-1840ARH
    Text: P WERING SPACE Payload and Bus Satellite Systems, Launch Vehicles P WERING SPACE Intersil's history and experience in the All Intersil SMD products are MIL-PRF-38535/ space and defense industries spans almost QML compliant and are 100% burned in. six decades beginning with the founding


    Original     		PDF MIL-PRF-38535/ D-85737 1-888-INTERSIL BR-558 ISL-706 5962R11212 HS-26CLV32RH ISL706 IS1825 IC free Intersil HS-1840ARH

    5962F9956004VXC

    Abstract: No abstract text available
    Text: Radiation Hardened Dual, Non-Inverting Power MOSFET Drivers HS-4424RH, HS-4424EH, HS-4424BRH, HS-4424BEH Features The Radiation Hardened HS-4424RH, HS-4424EH, HS-4424BRH and HS-4424BEH are non-inverting, dual, monolithic high-speed MOSFET drivers designed to convert TTL


    Original     		PDF HS-4424RH, HS-4424EH, HS-4424BRH, HS-4424BEH HS-4424BRH HS-4424BEH MIL-PRF-38535 HS-1825ARH 5962F9956004VXC

    HS-4424

    Abstract: HS4424B 5962F9951102VXC 5962F9951101VXC HS-4423 IS1715 HS-4423RH hs4423brh HS- RH HS4423
    Text: HS-4423RH, HS-4423BRH Data Sheet June 1999 Radiation Hardened Dual, Inverting Power MOSFET Drivers The Radiation Hardened HS-4423RH and the HS-4423BRH are inverting, dual, monolithic high-speed MOSFET drivers designed to convert TTL level signals into high current


    Original     		PDF HS-4423RH, HS-4423BRH HS-4423RH HS-4423BRH HS-1825ARH FS055, HS-4424BRH HS-4424RH IS-1715ARH HS-4424 HS4424B 5962F9951102VXC 5962F9951101VXC HS-4423 IS1715 hs4423brh HS- RH HS4423

    transistor smd za

    Abstract: smd transistor HX smd transistor HX 45 transistor smd xc transistor smd xb smd diode code T7 INTERSIL CROSS REFERENCE clocks ceramic pin grid array CPGA solder wire HMP CA3260
    Text: Ordering Nomenclature I NTERSIL N OMENCLATURE GUIDE Intersil Nomenclatures ISL Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 EL Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3


    Original     		PDF JM38510/ 1-888-INTERSIL transistor smd za smd transistor HX smd transistor HX 45 transistor smd xc transistor smd xb smd diode code T7 INTERSIL CROSS REFERENCE clocks ceramic pin grid array CPGA solder wire HMP CA3260

    transistor smd za

    Abstract: smd transistor HX SMD transistor Mu CD4000 cross REFERENCE TEPQFN CERAMIC LEADLESS CHIP CARRIER transistor smd za 28 SMD TRANSISTOR 1B t S14 SMD CA3260
    Text: Ordering Nomenclature 19 2009 P RODUCT S ELECTION GUIDE Intersil Nomenclatures ISL Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19-2 EL Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF JM38510/ 1-888-INTERSIL transistor smd za smd transistor HX SMD transistor Mu CD4000 cross REFERENCE TEPQFN CERAMIC LEADLESS CHIP CARRIER transistor smd za 28 SMD TRANSISTOR 1B t S14 SMD CA3260

    sot 23 code 27A

    Abstract: cd4000 cmos TEPQFN CERAMIC LEADLESS CHIP CARRIER CLCC intersil cdp65C51 22-16 diode smd
    Text: Ordering Nomenclature 22 2005 P RODUCT S ELECTION GUIDE Intersil Nomenclatures ISL Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22-2 EL Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF 82CXXX JM38510/ 1-888-INTERSIL sot 23 code 27A cd4000 cmos TEPQFN CERAMIC LEADLESS CHIP CARRIER CLCC intersil cdp65C51 22-16 diode smd

    smd transistor marking j1

    Abstract: smd transistor marking u1 ISL8009IRZ-T smd transistor marking 1p 2N7002-7-F 2N7002 MARKING schematic liteon adapter notebook SMD 6 PIN IC FOR PWM ac power adapter for notebook schematic DR73-2R2-R
    Text: ISL8009EVAL1Z: 1.5A Synchronous Buck Regulator with Integrated MOSFETs Application Note May 30, 2007 AN1328.0 The ISL8009 is an integrated power controller rate for 1.5A, 1.6MHz step-down regulator that is ideal for any low power, low-voltage applications. It is optimized for generating low


    Original     		PDF ISL8009EVAL1Z: AN1328 ISL8009 ISL8009EVAL1Z smd transistor marking j1 smd transistor marking u1 ISL8009IRZ-T smd transistor marking 1p 2N7002-7-F 2N7002 MARKING schematic liteon adapter notebook SMD 6 PIN IC FOR PWM ac power adapter for notebook schematic DR73-2R2-R

    ISL7884xASRH

    Abstract: ISL78845 ISL78843ASRH C2C17 2L smd transistor ridley ISL78840ASRH ISL78841ASRH ISL78845ASRH 5962R07
    Text: ISL78840ASRH, ISL78841ASRH, ISL78843ASRH, ISL78845ASRH The ISL7884xASRH is a high performance, radiation hardened drop-in replacement for the popular 28C4x and 18C4x PWM controllers suitable for a wide range of power conversion applications including boost, flyback,


    Original     		PDF ISL78840ASRH, ISL78841ASRH, ISL78843ASRH, ISL78845ASRH ISL7884xASRH 28C4x 18C4x ISL78840ASRH ISL78841ASRH FN6991 ISL78845 ISL78843ASRH C2C17 2L smd transistor ridley ISL78840ASRH ISL78841ASRH ISL78845ASRH 5962R07

    11n06

    Abstract: 11n06LT transistor smd YR 11N06L smd transistor 5c SMD footprint design smd transistor 5c l 5c smd transistor
    Text: Philips Semiconductors Preliminary specification PHP11N06LT, PHB11N06LT, PHD11N06LT TrenchMOS transistor Logic level FET FEATURES SYMBOL QUICK REFERENCE DATA Vdss —55 V • ’Trench’ technology • Very low on-state resistance • Fast switching • High thermal cycling performance


    OCR Scan     		PDF PHP11N06LT, PHB11N06LT, PHD11N06LT PHP11N06LT T0220AB) 11n06 11n06LT transistor smd YR 11N06L smd transistor 5c SMD footprint design smd transistor 5c l 5c smd transistor

    Untitled

    Abstract: No abstract text available
    Text: • Philips Semiconductors N bbSB'iai 0024136 4TT ■ I A P X AUER Data sheet status Product specification P H IL IP S /D IS C R E T E b?E ]> 2N7002 N-channel vertical D-MOS transistor date of issue April 1991 FEATURES QUICK REFERENCE DATA • Direct interface to C-MOS, TTL,


    OCR Scan     		PDF 2N7002 OT23bbS3T31 MCB703

    ld smd transistor LD 33

    Abstract: smd transistor ru
    Text: Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BSP030 PINNING - SOT223 FEATURES • High speed switching PIN SYMBOL DESCRIPTION • No secondary breakdown 1 g gate • Very low on-state resistance. 2 d drain


    OCR Scan     		PDF BSP030 OT223 ld smd transistor LD 33 smd transistor ru

    smd transistor nc 61

    Abstract: ld smd transistor LD 33
    Text: Philips Semiconductors Product specification PHP87N03LT, PHB87N03LT TrenchMOS transistor Logic level FET SYMBOL FEATURES • • • • • QUICK REFERENCE DATA ’Trench’ technology Very low on-state resistance Fast switching High thermal cycling performance


    OCR Scan     		PDF PHP87N03LT, PHB87N03LT PHP87N03LT T0220AB) smd transistor nc 61 ld smd transistor LD 33

    lg smd transistor LF

    Abstract: d25V
    Text: Philips Semiconductors Product specification N-channel enhancement mode TrenchMOS transistor GENERAL DESCRIPTION N-channel enhancement mode standard level fleld-effect power transistor In a surface mounting plastic envelope using ’trench’ technology. The device features very


    OCR Scan     		PDF IRFZ44NS SQT40ply lg smd transistor LF d25V

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification N-channel enhancement mode MOS transistor FEATURES BSH106 QUICK REFERENCE DATA SYMBOL d • Very low threshold voltage • Fast switching • Logic level compatible • Subminiature surface mount package V qs = 20 V


    OCR Scan     		PDF BSH106 BSH106 OT363 OT363

    ld smd transistor LD 33

    Abstract: BSH105N
    Text: Philips Semiconductors Product specification N-channel enhancement mode MOS transistor FEATURES BSH105 SYMBOL QUICK REFERENCE DATA • Very low threshold voltage • Fast switching • Logic level compatible • Subminiature surface mount package v ns = 20 V


    OCR Scan     		PDF BSH105 BSH105 ld smd transistor LD 33 BSH105N

    ld33a

    Abstract: transistor PSMN070 PSMN070-200P PSMN070-200B
    Text: Philips Semiconductors Objective specification TrenchMOS transistor SYMBOL FEATURES • • • • • PSMN070-200B, PSMN070-200P QUICK REFERENCE DATA ’Trench’ technology Very low on-state resistance Fast switching High thermal cycling performance


    OCR Scan     		PDF PSMN070-200B, PSMN070-200P PSMN070-200P T0220AB) PSMN070-200B OT404 ld33a transistor PSMN070

    TRANSISTOR ML SMD

    Abstract: smd transistor kn TRANSISTOR ML 13 SMD smd transistor 5c p
    Text: Philips Semiconductors Product specification Logic level TOPFET SMD version of BUK112-50GL DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 5 pin plastic SMD envelope, intended as a low side switch for automotive applications.


    OCR Scan     		PDF BUK112-50GL BUK111-50GL TRANSISTOR ML SMD smd transistor kn TRANSISTOR ML 13 SMD smd transistor 5c p

    Untitled

    Abstract: No abstract text available
    Text: ACS151MS HARRIS S E M I C O N D U C T O R Radiation Hardened 8-Input Multiplexer November 1997 Features Description • QML Qualified Per MIL-PRF-38535 Requirements The Radiation Hardened ACS151MS is an 8-Channel Multi­ plexer having three binary control inputs and an active low


    OCR Scan     		PDF ACS151MS ACS151MS

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology


    OCR Scan     		PDF BUK9605-30A SQT404

    BUK111-50GL

    Abstract: BUK112-50GL smd transistor JJ
    Text: Product specification Philips Semiconductors Logic level TOPFET SMD version of BUK112-50GL DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 5 pin plastic SMD envelope, intended as a low side switch for automotive applications.


    OCR Scan     		PDF BUK111-50GL BUK112-50GL OT426 BUK111-50GL BUK112-50GL smd transistor JJ

    smd JSs 75

    Abstract: smd JSs smd JSs transistor smd JSs diode transistor 5d smd BUK9606-55A smd JSs 85
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology


    OCR Scan     		PDF BUK9606-55A SQT404 smd JSs 75 smd JSs smd JSs transistor smd JSs diode transistor 5d smd BUK9606-55A smd JSs 85

    BSP030

    Abstract: TRANSISTOR ML SMD MGD72
    Text: DISCRETE SEMICONDUCTORS BSP030 N-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1997 Jan 20 File under Discrete Semiconductors, SC07 Philips Semiconductors 1997 Mar 13 PHILIPS Philips Semiconductors Product specification


    OCR Scan     		PDF BSP030 OT223 OT223. BSP030 TRANSISTOR ML SMD MGD72