LCCS 28 FOOTPRINT Search Results

Contextual Info: XlHE Preliminary Information XM28HC010 1 Megabit Module 128K X 8 Bit 5 Volt, Byte Alterable High Speed E2PROM TYPICAL FEATURES * High Speed 1 Megabit 128K x 8 E2PROM Module * Access Time of 70 ns at -55°C to +125°C * SIMPLE Byte and Page Write —Single 5 Volt Supply

Contextual Info: Issue 1.2: March 1988 ME8128SC-15/20/25 128K X 8 CMOS EEPROM Module ME8128SC •h.l,: I ^ ' M .ix h ‘ PRELIMINARY INFORMATION 131,072 x 8 CMOS High Speed EEPROM Features Pin D efinition Fast Access Times of 150/200/250 nS Half Populated Version ME864SC Available

Contextual Info: bfiE D • 4ÛSS771 DOlMMTl 20T ■ 512K x 8 CMOS STATIC RAM MODULE IDT IDT7M4048 INTEGRATED DEVICE FEATURES: DESCRIPTION: • High-density 4 megabit C M O S Static R A M module T h e ID T 7 M 40 48 is a 4 megabit 5 1 2K x 8 C M O S Static R AM m odule constructed on a co-fired ceram ic substrate

IC 2822

Abstract: IDT7M4048 7M40 ex 2822 cs107
Contextual Info: 512K x 8 CMOS STATIC RAM MODULE IDT7M4048 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High-density 4 megabit CMOS Static RAM module The IDT7M4048 is a 4 megabit 512K x 8 CMOS Static RAM module constructed on a co-fired ceramic substrate

2822

Abstract: IDT7M4048 7M4048 cmos static ram 512k 5v
Contextual Info: 512K x 8 CMOS STATIC RAM MODULE IDT7M4048 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High-density 4 megabit CMOS Static RAM module • Equivalent to the JEDEC standard for future monolithic 512K x 8 StaticRAMs • Fast access time: 25ns max.

Contextual Info: 3-D PACKAGING TECHNOLOGY The electronic industry is always trying to reduce the physical size of circuit design implementations. This is especially true today. Circuit designs have increased in complexity and sophistication beyond the ability of traditional

7M4048

Abstract: cmos static ram 512k 5v TA 7074 idt CMOS RAM lccs 28 footprint 2822 IDT7M4048
Contextual Info:  512K x 8 CMOS STATIC RAM MODULE IDT7M4048 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High-density 4 megabit CMOS Static RAM module • Equivalent to the JEDEC standard for future monolithic 512K x 8 StaticRAMs • Fast access time: 25ns max.

L1122

Contextual Info: 512K X 8 CMOS STATIC RAM MODULE IDT7M4048 Integrated Device Technology, inc. FEATURES: DESCRIPTION: • High-density 4 megabit CMOS Static RAM module The IDT7M4048 is a 4 megabit 512K x 8 CM OS Static RAM module constructed on a co-fired ceramic substrate

Am7000

Abstract: dash-1 20998 alu 74181 AM722 amd 2901 alu AM700 A31A MUX21L
Contextual Info: ADV MICRO P LA /P LE /A RRAY S 7 b ]>Ë| Q 2 5 7 5 5 L i G G B G ' m 0257526 ADV M I C R O PL A/ P L E / A R R AY S □ |T 76C 20991 Am7000 Series" T-42-11-09 Silicon-Gate HCMOS Logic Arrays PRELIMINARY > 3 » DISTINCTIVE CHARACTERISTICS o Silicon-gate 2.0-micron drawn HCMOS technology

Contextual Info: 512K x 8 CMOS STATIC RAM MODULE PRELIMINARY IDT7M4048 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High density 4 megabit CMOS static RAM module • Equivalent to the JEDEC standard for future monolithic 512K x 8 static RAMs • Fast access time: 17ns max.

a1601

Contextual Info: INTEGRATED DEVICE IDT M Ô 2 S 7 7 1 O O l M M S b 104 bflE D 32K x 32 128K x 32 CMOS STATIC RAM MODULES IDT7M4003 IDT7M4013 In te g ra te d D evice Technology, Inc. FEATURES DESCRIPTION • • The IDT7M4003/4013 are high-speed, high-density 1Mb/ 4Mb CMOS Static RAM modules constructed on a multilayer

Contextual Info: böE » • 4S2S771 00144*11 20T ■ 512Kx8 IDT IDT7M4048 CMOS STATIC RAM MODULE INTEGRATED DEVICE Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High-density 4 megabit C M O S Static RA M module T h e ID T 7 M 4 0 4 8 is a 4 megabit 5 1 2K x 8 C M O S Static

CERAMIC CHIP CARRIER LCC 68 socket

Abstract: INTEL 24 PIN CERAMIC DUAL-IN-LINE PACKAGE LCCs 68 socket ic 7912 64 ceramic quad flatpack CERAMIC PIN GRID ARRAY CPGA lead frame CERAMIC LEADLESS CHIP CARRIER LCC 32 socket PCB footprint cqfp 132 Single Edge Contact (S.E.C.) Cartridge: 7912 pin configuration
Contextual Info: Introduction 1.1 1 Overview Of Intel Packaging Technology As semiconductor devices become significantly more complex, electronics designers are challenged to fully harness their computing power. Today’s products can feature more than seven million transistors and device count is expected to increase to 100 million by the year 2000. With a

Contextual Info: 512K x 8 CMOS STATIC RAM MODULE PRELIMINARY IDT7M4048 Integrateci Device Technology, Inc. FEATURES: DESCRIPTION: • High density 4 megabit CM O S static RAM module • Equivalent to the JEDEC standard for future monolithic 512K x 8 static RAMs • Fast access time: 17ns max.

2824 footprint dimension

Abstract: 2824 footprint 2B24
Contextual Info: 256K x 8 CMOS STATIC RAM MODULE PRELIMINARY IDT7M4068 Integrated D evice T ech n o logy, Inc. FEATURES: DESCRIPTION: • High density 2 megabit C M O S static RAM module • Equivalent to the JE D E C standard for future monolithic 256 K x 8 static RAMs • Fast access time: 17ns max.

Q1932

Contextual Info: 47E D I N T E G R A T E D D E VI CE Bi 4 Ö 2 5 7 7 1 OGlGlSt. T • 512K x 8 CMOS STATIC RAM MODULE IDT PRELIMINARY IDT7M4048 -m -v z -w In teg rated D evice T echnology, Inc* FEATURES: DESCRIPTION: • High density 4 megabit C M O S static RAM module • Equivalent to the J E D E C standard for future monolithic

Contextual Info: 256K x 8 CMOS STATIC RAM MODULE PRELIMINARY IDT7M4068 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High density 2 megabit CM O S static RAM module • Equivalent to the JEDEC standard for future monolithic 256K x 8 Static RAMs • Fast access time: 17ns max.

7M4013

Contextual Info: INTEGRATED DEVICE 4ÖZ5771 CIOmMSb 104 LflE D 32K x 32 128K x 32 CMOS STATIC RAM MODULES IDT IDT7M4003 IDT7M4013 I n te g r a te d D ev ic e T e c h n o lo g y , In c . FEATURES DESCRIPTION • • The ID T 7 M 40 03/4 013 are high-speed, high-density 1M b/

IBM 1M x 4

Abstract: 11D1360BA 11E1360BB
Contextual Info: IBM11D1360BB IBM11D1360BA IBM11E1360BB IBM11E1360BA 1M x 36 D R A M M odule Features All inputs & outputs are fully TTL & CMOS compatible Fast Page Mode access cycle Refresh Modes: RAS-Only and CBR 1024 refresh cycles distributed across 16ms 10/10 Addressing Row/Column

oSC-70

Contextual Info: 256K x 8 CMOS STATIC RAM MODULE PRELIMINARY IDT7M4068 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High density 2 megabit C M O S static RAM module • Equivalent to the JE D E C standard for future monolithic 256K x 8 static RAMs • Fast access time: 17ns max.

Contextual Info: IBM 11 M8645H 8M X 64 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • 8Mx64 Extended Data Out Mode DIMM • Optimized for ECC applications • System Performance Benefits: -Buffered inputs except RAS, Data • Performance:

Contextual Info: IBM11M8645H 8M x 64 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • Optimized for ECC applications • System Performance Benefits: • 8Mx64 Extended Data Out Mode DIMM -Buffered inputs except RAS, Data • Performance:

RL7320

Abstract: RL76 8 bit barrel shifter T-42-11-09 transistor 2N RL7220 8 BIT ALU by 74181
Contextual Info: RAYTHEONi 7597360 SEMICONDUCTOR RAYTHEON» AO De 7ST73bO SEMICONDUCTOR DDDS32T 80C 0 5 3 2 9 Product Specifications Configurable Gate Arrays 5 T-42-11-09 RL7000 Series Raytheon RL7000 Series Silicon-Gate HCMOS Logic Arrays Features • Silicon-gate 2.0/u (drawn HCMOS technology

Contextual Info: IB M 1 1 M 8 7 3 0 H B 8M X 72 DRAM M ODULE Features • 168 Pin JE D E C Standard, 8 Byte Dual In-line Memory Module • Au contacts • Optimized for ECC applications • System Performance Benefits: • 8Mx72 Fast Page Mode DIMM -60 - Buffered inputs except RAS, Data