M36W108AB
Abstract: M36W108AT
Text: M36W108AT M36W108AB 8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit (128Kb x8) SRAM Low Voltage Multi-Memory Product PRELIMINARY DATA • SUPPLY VOLTAGE – VCCF = VCCS = 2.7V to 3.6V: for Program, Erase and Read ■ ACCESS TIME: 100ns ■ LOW POWER CONSUMPTION
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M36W108AT
M36W108AB
128Kb
100ns
LBGA48
LGA48
M36W108AB
M36W108AT
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LGA48
Abstract: M36W108AB M36W108AT
Text: M36W108AT M36W108AB 8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit (128Kb x8) SRAM Low Voltage Multi-Memory Product DATA BRIEFING • SUPPLY VOLTAGE – VCCF = VCCS = 2.7V to 3.6V: for Program, Erase and Read ■ ACCESS TIME: 100ns ■ LOW POWER CONSUMPTION
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M36W108AT
M36W108AB
128Kb
100ns
LBGA48
LGA48
LBGA48:
10x12x1
LGA48:
LGA48
M36W108AB
M36W108AT
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LGAZ0
Abstract: M36W108AB M36W108AT
Text: M36W108AT M36W108AB 8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit (128Kb x8) SRAM Low Voltage Multi-Memory Product PRELIMINARY DATA • SUPPLY VOLTAGE – VCCF = VCCS = 2.7V to 3.6V: for Program, Erase and Read ■ ACCESS TIME: 100ns ■ LOW POWER CONSUMPTION
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M36W108AT
M36W108AB
128Kb
100ns
LBGA48
LGA48
LGAZ0
M36W108AB
M36W108AT
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AI02511
Abstract: M36W108 M36W108B M36W108T
Text: M36W108T M36W108B 8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit (128Kb x8) SRAM Low Voltage Multi-Memory Product PRELIMINARY DATA • SUPPLY VOLTAGE – VCCF = VCCS = 2.7V to 3.6V: for Program, Erase and Read ■ ACCESS TIME: 100ns ■ LOW POWER CONSUMPTION
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M36W108T
M36W108B
128Kb
100ns
LBGA48
LGA48
AI02511
M36W108
M36W108B
M36W108T
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EEPROM 16MB
Abstract: house map M29W166T AM29F100 M29F800B M29W160T M29F001 16mb eeprom M29F200 M29W004
Text: Standard and Advanced Architecture Flash DISCOVER ST NOW Flash memories are the most dynamic new driving force in nonvolatile memories. The flexibility they provide for in-system reprogramming and their low cost meet the needs as an enabling technology for many new applications. Nomadic applications, such
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FLSTD/1198
286-CJ103
EEPROM 16MB
house map
M29W166T
AM29F100
M29F800B
M29W160T
M29F001
16mb eeprom
M29F200
M29W004
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SST25VF128
Abstract: SST25VF128C soic-8 200mil TSOP32 FOOTPRINT footprint WSON-8 SST12LP15A TSOP32 8 X 14 FOOTPRINT BIOS 32 Pin SST39SF040 SST25VF080B BIOS electronic clock on breadboard
Text: Headquartered in Sunnyvale, California, SST designs, manufactures and markets a diversified range of memory and non-memory products for high volume applications in the digital consumer, networking, wireless communications and Internet computing markets. Leveraging its proprietary, patented SuperFlash
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footprint so44
Abstract: 9977 IC SOCKET TSOP48 TSOP32 FOOTPRINT ST1355 52 pin plcc socket ST19GF34 PSDSoft ST19AF08 serial flash 256Mb fast erase spi
Text: MEMORY SELECTOR Leading Edge Memories • 1999 GO Why a Broad Range? Leading Edge Memories OTP and UV EPROMs Flash Memories Serial and Parallel EEPROMs ASM and Memory Card ICs Memory Systems and NVRAMs BROAD RANGE STMicroelectronics is a world leader in non-volatile memories, manufacturing a broad
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operat911)
D-90449
BRMEMSEL/0699
footprint so44
9977
IC SOCKET TSOP48
TSOP32 FOOTPRINT
ST1355
52 pin plcc socket
ST19GF34
PSDSoft
ST19AF08
serial flash 256Mb fast erase spi
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M36W108
Abstract: M36W108B M36W108T
Text: M36W108T M36W108B 8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit (128Kb x8) SRAM Low Voltage Multi-Memory Product PRELIMINARY DATA • SUPPLY VOLTAGE – VCCF = VCCS = 2.7V to 3.6V: for Program, Erase and Read ■ ACCESS TIME: 100ns ■ LOW POWER CONSUMPTION
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M36W108T
M36W108B
128Kb
100ns
LBGA48
LGA48
M36W108
M36W108B
M36W108T
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LGA48
Abstract: M36W108AB M36W108AT F0000H
Text: M36W108AT M36W108AB 8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit (128Kb x8) SRAM Low Voltage Multi-Memory Product PRELIMINARY DATA • SUPPLY VOLTAGE – VCCF = VCCS = 2.7V to 3.6V: for Program, Erase and Read ■ ACCESS TIME: 100ns ■ LOW POWER CONSUMPTION
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M36W108AT
M36W108AB
128Kb
100ns
LBGA48
LGA48
LGA48
M36W108AB
M36W108AT
F0000H
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TAG 9109
Abstract: M35080 M95256 equivalent TSOP48 outline EEPROM 16MB NVRAM 1KB TSOP40 "dual access" "nonvolatile memory" -RFID ST1335 asm eagle
Text: MEMORY SELECTOR Leading Edge Memories • Fall 1998 GO Why a Broad Range? Leading Edge Memories Flash Memories Serial and Parallel EEPROMs Application Specific Memories UV and OTP EPROMs Non-Volatile RAMs BROAD RANGE STMicroelectronics is a world leader in
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286-CJ103
TAG 9109
M35080
M95256 equivalent
TSOP48 outline
EEPROM 16MB
NVRAM 1KB
TSOP40
"dual access" "nonvolatile memory" -RFID
ST1335
asm eagle
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LGAZ0
Abstract: M36W108AB M36W108AT M36W108B M36W108T
Text: M36W108T M36W108B 8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit (128Kb x8) SRAM Low Voltage Multi-Memory Product NOT FOR NEW DESIGN • M36W108T and M36W108B are replaced respectively by the M36W108AT and M36W108AB ■ SUPPLY VOLTAGE – VCCF = VCCS = 2.7V to 3.6V: for Program,
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M36W108T
M36W108B
128Kb
M36W108T
M36W108B
M36W108AT
M36W108AB
100ns
LBGA48
LGA48
LGAZ0
M36W108AB
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M36W108B
Abstract: M36W108T M36W108AB M36W108AT LGA48
Text: M36W108T M36W108B 8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit (128Kb x8) SRAM Low Voltage Multi-Memory Product NOT FOR NEW DESIGN • ■ M36W108T and M36W108B are replaced respectively by the M36W108AT and M36W108AB SUPPLY VOLTAGE – VCCF = VCCS = 2.7V to 3.6V: for Program,
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M36W108T
M36W108B
128Kb
M36W108T
M36W108B
M36W108AT
M36W108AB
100ns
LBGA48
LGA48
M36W108AB
LGA48
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10A19
Abstract: No abstract text available
Text: M36W108AT M36W108AB 8 Mbit 1 Mb x8, Boot Block Flash Memory and 1 Mbit (128Kb x8) SRAM Low Voltage Multi-Memory Product PRELIMINARY DATA • SUPPLY VOLTAGE - V ccf = V ccs = 2.7V to 3.6V: for Program, Erase and Read ■ ACCESS TIME: 100ns ■ LOW POWER CONSUMPTION
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OCR Scan
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M36W108AT
M36W108AB
128Kb
100ns
M36W108AT,
LGA48
LGA-Z02
10A19
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Untitled
Abstract: No abstract text available
Text: M 36W 108T M 36W 108B 8 Mbit 1 Mb x8, Boot Block Flash Memory and 1 Mbit (128Kb x8) SRAM Low Voltage Multi-Memory Product PRELIMINARY DATA • SUPPLY VOLTAGE - V ccf = V ccs = 2.7V to 3.6V: for Program, Erase and Read ■ ACCESS TIME: 100ns ■ LOW POWER CONSUMPTION
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OCR Scan
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128Kb
100ns
LGA48
LGA48
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