D9326
Abstract: BD9329
Text: 4.75V to 18V, 2A/3A/4A 1ch Buck Converter Integrated FET BD9325FJ-LB BD9326EFJ-LB BD9327EFJ-LB ●General Description This is the product guarantees long time support And long life cycle in Industrial market. The BD9325FJ-LB, BD9326EFJ-LB and BD9329EFJ -LB are step-down regulators that integrate a low
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BD9325FJ-LB
BD9326EFJ-LB
BD9327EFJ-LB
BD9325FJ-LB,
BD9329EFJ
BD9325FJ
BD9326EFJ-LB
BD9325FJ-LB
D9326
BD9329
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TPS606
Abstract: TLN104 TPS605
Text: TO SHIBA TPS606,TPS606 LB TOSHIBA PHOTO TRANSISTOR TAPE, CARD READERS SILICON NPN EPITAXIAL PLANAR TPS606, TPS606 (LB) Unit in mm TPS606 PRINTER, TERMINAL OPTO-ELECTRONIC SWITCH Micro-package (epoxy resin package) Double end type : TPS606 DIP type : TPS606 (LB)
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TPS606
TPS606,
TPS606
TLN104
TPS605
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Untitled
Abstract: No abstract text available
Text: 2.54mm .100" Pitch Transistor Socket Sockets and Edge Connectors FEATURES AND SPECIFICATIONS E Features and Benefits Mechanical Contact Insertion Force: 681g (1.51 lb) max. Contact Retention to Housing: 3.63kg (8 lb) min. These 3-circuit transistor sockets are preassembled and ready
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Untitled
Abstract: No abstract text available
Text: Datasheet 4.5V to 25V Input, 1ch Synchronous Buck DC/DC Controller BD95601MUV-LB ●Description BD95601MUV-LB is a high current buck regulator that produces low output voltage 0.75V to 2.0V from a wide input voltage range (4.5V to 25V). High efficiency is
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BD95601MUV-LB
BD95601MUV-LB
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RESISTOR ROHM R20
Abstract: No abstract text available
Text: Datasheet 4.5V to 25V Input, 1ch Synchronous Buck DC/DC Controller BD95601MUV-LB ●Description BD95601MUV-LB is a high current buck regulator that produces low output voltage 0.75V to 2.0V from a wide input voltage range (4.5V to 25V). High efficiency is
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BD95601MUV-LB
BD95601MUV-LB
RESISTOR ROHM R20
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toshiba 4b1
Abstract: 4b1 toshiba TLP907 tlp9 11-4B101
Text: TO SH IBA TLP907,TLP907 LB TOSHIBA PHOTOREFLECTIVE SENSORS INFRARED LED + PHOTODARLINGTON TRANSISTOR TLP907, TLP907 (LB) DETECTION OF START AND END MARKS ON VIDEO AND AUDIO TAPE DETECTION OF VCR REEL ROTATION DETECTION OF INDEX WRITE-PROTECT AND PRESENCE OF DISK FOR FLOPPY DISK DRIVE
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TLP907
TLP907,
TLP907
11-4B1
11-4B101
toshiba 4b1
4b1 toshiba
tlp9
11-4B101
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Untitled
Abstract: No abstract text available
Text: Datasheet 7.0V to 36V Input, 2.5A Integrated MOSFET Single Synchronous Buck DC/DC Converter BD9E300EFJ-LB Key Specifications General Description This product guarantees long time support and long life cycle in Industrial market. BD9E300EFJ-LB is a synchronous buck switching regulator
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BD9E300EFJ-LB
BD9E300EFJ-LB
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Untitled
Abstract: No abstract text available
Text: Datasheet 7.0V to 36V Input, 2.5A Integrated MOSFET Single Synchronous Buck DC/DC Converter BD9E301EFJ-LB Key Specifications General Description This product guarantees long time support and long life cycle in Industrial market. BD9E301EFJ-LB is a synchronous buck switching regulator
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BD9E301EFJ-LB
BD9E301EFJ-LB
570kHz
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Untitled
Abstract: No abstract text available
Text: Datasheet 7.0V to 36V Input, 1.0 A Integrated MOSFET Single Synchronous Buck DC/DC Converter BD9E101FJ-LB Key Specifications General Description This product guarantees long time support and long life cycle in Industrial market. BD9E101FJ-LB is a synchronous buck switching regulator
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BD9E101FJ-LB
BD9E101FJ-LB
570kHz
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Untitled
Abstract: No abstract text available
Text: Datasheet 7.0V to 36V Input, 1.0 A Integrated MOSFET Single Synchronous Buck DC/DC Converter BD9E100FJ-LB Key Specifications General Description This product guarantees long time support and long life cycle in Industrial market. BD9E100FJ-LB is a synchronous buck switching regulator
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BD9E100FJ-LB
BD9E100FJ-LB
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Untitled
Abstract: No abstract text available
Text: Datasheet Small Signal IGBT/MOSFET Gate Driver Series Two-Channel/Three-Channel Small Signal IGBT/MOSFET Gate Drivers BD6562FV-LB, BD6563FV-LB ●General Description These products guarantee long time support in Industrial market. These products are the most suitable to use as these
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BD6562FV-LB,
BD6563FV-LB
380ns
345ns
BD6562FV-LB/BD6563FV-LB
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Untitled
Abstract: No abstract text available
Text: Datasheet 4.2V to 18V, 2A 1ch Synchronous Buck Converter Integrated FET BD9328EFJ-LB ●General Description This is the product guarantees long time support And long life cycle in Industrial market. The BD9328EFJ-LB is a synchronous step-down switching regulator that integrates 2 low resistance
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BD9328EFJ-LB
BD9328EFJ-LB
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BD9329
Abstract: No abstract text available
Text: Datasheet 4.2V to 18V, 3A 1ch Synchronous Buck Converter integrated FET BD9329AEFJ-LB General Description Key Specifications This is the product guarantees long time support in Industrial market. The BD9329AEFJ-LB is a synchronous step-down
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BD9329AEFJ-LB
BD9329AEFJ-LB
BD9329
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Untitled
Abstract: No abstract text available
Text: Datasheet 4.5V to 18V Input, 3.0A Integrated MOSFET Single Synchronous Buck DC/DC Converter BD9C301FJ-LB General Description Key Specifications This is the product guarantees long time support in Industrial market. BD9C301FJ-LB is a synchronous buck switching regulator with built-in low on-resistance power
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Untitled
Abstract: No abstract text available
Text: Datasheet 4.5V to 18V Input, 3.0A Integrated MOSFET Single Synchronous Buck DC/DC Converter BD9C301FJ-LB General Description Key Specifications This is the product guarantees long time support in Industrial market. BD9C301FJ-LB is a synchronous buck switching regulator with built-in low on-resistance power
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BD9C301FJ-LB
BD9C301FJ-LB
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Untitled
Abstract: No abstract text available
Text: Datasheet Synchronous Buck Converter Integrated FET BD9109FVM-LB General Description Key Specifications This is the product guarantees long time support in Industrial market. ROHM’s high efficiency step-down switching regulators BD9109FVM-LB is a power supply designed to
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BD9109FVM-LB
BD9109FVM-LB)
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE ^53=131 O D l M i n b OhE D l LB E /LC E 2003S LB E /LC E 2009S T - 3 3 -O S ' MICROWAVE LINEAR POWER TRANSISTORS N-P-N transistors for use in a common-emitter class-A linear power amplifier up to 4 GHz. Diffused emitter ballasting resistors, self-aligned process entirely ion implanted and gold metallization
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2003S
2009S
LBE2003S
LBE2009S
LCE2003S
LCE2009S
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D1062
Abstract: 2SB1657 C10535E C10943X MEI-1202
Text: DATA SHEET SILICON TRANSISTOR 2SB1657 AUDIO FREQUENCY AMPLIFIER, SWITCHING PNP SILICON EPITAXIAL TRANSISTORS FEATURES • Low VCE sat VCE(sat) = −0.15 V Max (@lC/lB = 0.5 A/25 mA) Collector to Base Voltage Collector to Emitter Volteage VCB0 VCE0 −30 V
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2SB1657
D1062
2SB1657
C10535E
C10943X
MEI-1202
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d1063
Abstract: 2SB1658 C10535E C10943X MEI-1202 D10630EJ1V0DS00
Text: DATA SHEET SILICON TRANSISTOR 2SB1658 AUDIO FREQUENCY AMPLIFIER, SWITCHING PNP SILICON EPITAXIAL TRANSISTORS FEATURES • Low VCE sat VCE(sat) = −0.15 V Max (@lC/lB = 1.0 A/50 mA) Collector to Base Voltage Collector to Emitter Voltage VCB0 VCE0 −30 V
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2SB1658
d1063
2SB1658
C10535E
C10943X
MEI-1202
D10630EJ1V0DS00
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D1062
Abstract: 2SD2583 C10535E C10943X MEI-1202
Text: DATA SHEET SILICON TRANSISTOR 2SD2583 AUDIO FREQUENCY AMPLIFIER, SWITCHING NOPN SILICON EPITAXIAL TRANSISTORS FEATURES • Low VCE sat VCE(sat) = 0.15 V Max (@lC/lB = 1.0 A/50 mA) Collector to Base Voltage Collector to Emitter Volteage VCB0 VCE0 30 V 30 V
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2SD2583
D1062
2SD2583
C10535E
C10943X
MEI-1202
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2SC4278
Abstract: 2sa1633
Text: 2SC4278 Transistor, NPN Features Dimensions Units : mm • available in TO-247 package • high collector breakdown voltage, typically BVCeo = 150 V low collector saturation voltage, typically VCE(sat) = 0.3 V at lc /lB = 7 A/0.7 A • 2SC4278 (TO-247) •
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2SC4278
O-247
2SA1633
O-247)
2SC4278
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bel 187 transistor
Abstract: RTC406 LBE2003S LBE2009S LCE2003S LCE2009S BEL 187 npn
Text: A 1I N AMER O bE P H ILIP S/D ISC R ETE D bbSBTBl O G lM ^ n b LB E /LC E 2 0 0 3S LB E /LC E2 0 0 9S T - 3 3 - Ö S - M IC R O W A V E LINEAR PO W ER T R A N SIST O R S N-P-N transistors for use in a common-emitter class-A linear power amplifier up to 4 GHz.
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LBE/LCE2003S
LBE/LCE2009S
LBE2Q03S
LBE2009S
LCE2003S
LCE2009S
LBE/LCE200Striplines
bel 187 transistor
RTC406
LBE2003S
BEL 187 npn
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D1062
Abstract: 2SD2582 C10535E C10943X MEI-1202 965 ic data
Text: DATA SHEET SILICON TRANSISTOR 2SD2582 AUDIO FREQUENCY AMPLIFIER, SWITCHING NPN SILICON EPITAXIAL TRANSISTORS FEATURES • Low VCE sat VCE(sat) = 0.15 V Max (@lC/lB = 0.5 A/25 mA) Collector to Base Voltage Collector to Emitter Voltage VCB0 VCE0 30 V 30 V Emitter to Base Voltage
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2SD2582
D1062
2SD2582
C10535E
C10943X
MEI-1202
965 ic data
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60B120
Abstract: 2SA671 2SC1061
Text: ¿Z&MOSPEC PNP SILICON POWER TRANSISTORS PNP 2SA671 .designed for use in iow frequency power amplifier applications FEATURES: * Low Collector-Emitter Saturation Voltage VCE satf @ ic=2.0A,lB=0.2A * DC Current Gain hFE= 35-320@lc= 0.5A * Complememtary to NPN 2SC1061
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2SC1061
2SA671
60B120
2SC1061
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