LB 125 TRANSISTOR Search Results

Contextual Info: DCX4710H 100mA DUAL COMPLEMENTARY PRE-BIASED TRANSISTORS General Description • DCX4710H is best suited for applications where the load needs to be turned on and off using micro-controllers, comparators or other control circuits, particularly at a point of

Contextual Info: DCX4710H Lead-free Green 100mA DUAL COMPLEMENTARY PRE-BIASED TRANSISTORS NEW PRODUCT General Description • DCX4710H is best suited for applications where the load needs to be turned on and off using micro-controllers, comparators or other control circuits particularly at a point of

Contextual Info: DCX4710H Lead-free Green 100mA DUAL COMPLEMENTARY PRE-BIASED TRANSISTORS NEW PRODUCT General Description • DCX4710H is best suited for applications where the load needs to be turned on and off using micro-controllers, comparators or other control circuits, particularly at a point of

marking code SM diode

Abstract: 10KW DCX4710H DDTA114YE DDTC114EE transistor Marking code 1KW MARKING code 46 sot 563
Contextual Info: DCX4710H Lead-free Green 100mA DUAL COMPLEMENTARY PRE-BIASED TRANSISTORS NEW PRODUCT General Description • DCX4710H is best suited for applications where the load needs to be turned on and off using micro-controllers, comparators or other control circuits particularly at a point of

NPN PNP sot-563

Abstract: DCX4710H DCX4710H-7
Contextual Info: DCX4710H 100mA DUAL COMPLEMENTARY PRE-BIASED TRANSISTORS General Description • DCX4710H is best suited for applications where the load needs to be turned on and off using micro-controllers, comparators or other control circuits, particularly at a point of

Contextual Info: DCX4710H Lead-free Green 100mA DUAL COMPLEMENTARY PRE-BIASED TRANSISTORS NEW PRODUCT General Description • DCX4710H is best suited for applications where the load needs to be turned on and off using micro-controllers, comparators or other control circuits particularly at a point of

Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2520AW GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz,

4N4X

Contextual Info: 66138 Features: Applications: • • • • • • • • • • mu SINGLE CHANNEL, HERMETIC 6 PIN LCC, ELECTRICALLY SIMILAR TO 4N22, 4N23, 4N24, 4N47, 4N48, 4N49 High Reliability Base lead provided for conventional transistor biasing Very high gain, high voltage transistor

Contextual Info: bGE D • fllBBlß? DQOGS1B 57b H S I I L B SEMELAB PLC SEMELAB T~-33-\3 BUL52B ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE, HIGH SPEED NPN SILICON POWER TRANSISTOR M E C H A N IC A L D A T A D im ensio ns in m m D esigned for use in electronic ballast lighting applications

LB-19

Abstract: BU2520A BY228 ak4a po254
Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2520A GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.

transistor 800V 1A

Contextual Info: Mil =X= mi SEME BUL52B LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm f* 10.2 -► , 4.5 1.3 3.6 Dia. 1 2 Designed for use in electronic ballast applications • SEMEFAB DESIGNED AND DIFFUSED DIE

Contextual Info: IMI = fï= IMI SEME BUL52BFI LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm <* 10.2 *\ 3.6 Dia. Designed for use in electronic ballast applications • SEMEFAB DESIGNED AND DIFFUSED DIE

BU2530

Contextual Info: Philips Sem iconductors Product specification Silicon Diffused Power Transistor BU2530AL GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.

Contextual Info: 66064 Features: Applications: • • • • • • • • • • mu SINGLE CHANNEL, HERMETIC 20 PIN LCC, ELECTRICALLY SIMILAR TO 4N47, 4N48, 4N49 High Reliability Base lead provided for conventional transistor biasing Very high gain, high voltage transistor

chip die npn transistor

Contextual Info: Illl =K= Illl SEME BUL72B LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm - 0 24 //*"- Designed for use in electronic ballast applications • SEMEFAB DESIGNED AND DIFFUSED DIE • HIGH VOLTAGE

Contextual Info: Mil =X= mi SEME BUL68A LAB MECHANICAL DATA Dimensions in mm 2 .1 8 0 .086 ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR Designed for use in electronic ballast applications • SEMEFAB DESIGNED AND DIFFUSED DIE • HIGH VOLTAGE

Contextual Info: Mil = ^ = INI BUL56A SEME LAB MECHANICAL DATA Dimensions in mm 4.5 10.2 , f*-► f*-1.3 ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR 3.6 Dia. Designed for use in electronic ballast applications • SEMEFAB DESIGNED AND DIFFUSED DIE

LAB 250 LB

Abstract: alc100
Contextual Info: Mil =X= mi SEME BUL63B LAB MECHANICAL DATA Dimensions in mm 2 .1 8 0 .086 ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR Designed for use in electronic ballast applications • SEMEFAB DESIGNED AND DIFFUSED DIE • HIGH VOLTAGE

Contextual Info: Mil =X= mi SEME BUL66B LAB MECHANICAL DATA Dimensions in mm 2 .1 8 0 .086 ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR Designed for use in electronic ballast applications • SEMEFAB DESIGNED AND DIFFUSED DIE • HIGH VOLTAGE

Contextual Info: Mil = ^ = IN I BUL58A SEME LAB MECHANICAL DATA Dimensions in mm 4.5 10.2 , f*-► f*-1.3 ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR 3.6 Dia. Designed for use in electronic ballast applications • SEMEFAB DESIGNED AND DIFFUSED DIE

Contextual Info: Mil = ^ = M il SEME BUL62B LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm inches 2 .1 8 (0 .0 8 6 ) Designed for use in electronic ballast applications SEMEFAB DESIGNED AND DIFFUSED DIE

Contextual Info: SuperSOT SOT23 NPN SILICON POWER SWITCHING TRANSISTORS FMMT617 FMMT618 FMMT619 FMMT624 FMMT625 ISS U E 3 - N O V EM B ER 1995_ FEATURES * 625mW POWER DISSIPATIO N * * * * * lc C O N T 3 A 12A Peak Pulse Current Excellent HF£ Characteristics Up To 12A (pulsed)

Contextual Info: Illl = V r= Illl SEME BUL56B-SM LAB NPN FAST SWITCHING TRANSISTOR MECHANICAL DATA Dimensions in mm FEATURES 11.5 2.0 3.5 •LOW SATURATION VOLTAGE 0.25 r* 3.5 •ULTRA FAST TURN-ON AND TURN-OFF SWITCHING tr / t f = 40ns 3.0 r4 * J —k ÏT APPLICATIONS 14

Contextual Info: Mil = ^ = IN I BUL53B SEME LAB MECHANICAL DATA Dimensions in mm 4.5 10.2 , f*-► f*-1.3 ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR 3.6 Dia. Designed for use in electronic ballast applications • SEMEFAB DESIGNED AND DIFFUSED DIE