LB 122 TRANSISTOR Search Results

LB 122 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

LB 122 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
LB 122 transistor Abstract: LB 122 NPN TRANSISTOR LB 122 NPN LB 121 NPN TRANSISTOR LB 127 transistor tip122 tip120 TIP 122 transistor TIP 122 transistor tip 122 Text: NPN EPITAXIAL DARLINGTON TRANSISTOR TIPI 20/121/122 MEDIUM POWER LINEAR SWITCHING APPLICATIONS • Complementary to TIP125/126/127 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Collector-Base Voltage : TIP120 Rating : TIP121 : TIP122 Collector-Emitter Voltag»	OCR Scan	TIP125/126/127 TIP120 TIP121 TIP122 TIP121 TIP120/121/122 120ft LB 122 transistor LB 122 NPN TRANSISTOR LB 122 NPN LB 121 NPN TRANSISTOR LB 127 transistor tip120 TIP 122 transistor TIP 122 transistor tip 122	PDF
LB 122 transistor Abstract: LB 122 NPN TRANSISTOR Text: NPN EPITAXIAL DARLINGTON TRANSISTOR TIP120/121/122 MEDIUM POWER TRANSISTOR SWITCHING APPLICATIONS • C om plem entary to TIP 1 25/126/127 ABSOLUTE MAXIMUM RATINGS C h a ra c te rist: TIP 1 20 C ollector-B ase V oltage : TIP 1 21 : TIP122 C ollector-E m ltter V o lta g ' TIP120	OCR Scan	TIP120/121/122 TIP122 TIP120 TIP121 LB 122 transistor LB 122 NPN TRANSISTOR	PDF
LB 122 transistor Abstract: LB 122 NPN TRANSISTOR TIP 122 transistor TIP 122 100 V LB 121 NPN TRANSISTOR NPN Transistor VCEO 80V 100V tip120 to-220 npn darlington TRANSISTOR tip122 TIP120 TIP121 Text: TIP I 20/121/122 NPN EPITAXIAL DARLINGTON TRANSISTOR MEDIUM POWER TRANSISTOR SWITCHING APPLICATIONS • C om plem entary to TIP 1 25/126/127 ABSOLUTE MAXIMUM RATINGS Characterist TIP120 TIP121 C ollector-Base Voltage Sym bol Rating V c bO TIP122 C ollector-E m ltter Voltag	OCR Scan	TIP120/121 TIP125/126/127 TIP120 TIP121 TIP122 TIP121 O-220 LB 122 transistor LB 122 NPN TRANSISTOR TIP 122 transistor TIP 122 100 V LB 121 NPN TRANSISTOR NPN Transistor VCEO 80V 100V tip120 to-220 npn darlington TRANSISTOR tip122	PDF
tip127 darlington Abstract: TIP127 TIP122 TIP120 TIP121 TIP125 TIP126 tip122 tip127 Text: SAN YO NPN TIP120 TIP121 TIP122 SEMICONDUCTOR DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS PNP TIP125 TIP126 TIP127 60-80-100 VOLTS, 5 AMPERE HIGH CURRENT GAIN hFE = 2500 typ. @3V, 3A LOW SATURATION VOLTAGE V c e S A T = 1.0V typ. @2.5A MONOLITHIC CONSTRUCTION WITH BUILT-IN	OCR Scan	TIP120 TIP125 TIP121 TIP126 TIP122 TIP127 TIP120, TIP125 TIP121, TIP126 tip127 darlington TIP127 tip122 tip127	PDF
LB 122 transistor Abstract: LB 122 NPN TRANSISTOR Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIPI 20/121/122 MEDIUM POWER LINEAR SWITCHING APPLICATIONS TO -220 • Complement to TIPI25/126/127 ABSOLUTE MAXIMUM RATINGS Ta = 25°C Characteristic Rating Unit V CBO 60 80 100 V V V V cE O 60 80 100 5 5 8 120	OCR Scan	TIPI25/126/127 TIP120 TIP121 TIP122 LB 122 transistor LB 122 NPN TRANSISTOR	PDF
transistor 42t Abstract: 2C5339 2C6193 chip die npn transistor Text: 5-A PNP Power Transistor Chips 2C6193 FEATURES CHIP TYPE: AL • Epitaxial, Planar Design • Contact Metallization: Base, Emitter - Aluminum - 50,000 A Nominal Collector - Gold - 3,000 A Nominal • Die Thickness - 10 Mils Nominal • Complement to NPN 2C5339	OCR Scan	2C6193 2C5339 350fcS, transistor 42t 2C5339 2C6193 chip die npn transistor	PDF
TIP 122 transistor Abstract: transistor tip 122 tip 120 tip 122 transistor darlington TIP-120 IP122 TIP 21 transistor Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR T IP I 20/121/122 MEDIUM POWER LINEAR SWITCHING APPLICATIONS • C o m p le m e n t lo T IP I 25/126/127 ABSOLUTE MAXIMUM RATINGS i C haracteristic S ym bol C o lle c to r-B a s e V o lta g e : TIP120 R ating 60	OCR Scan	TIP120 TIP121 TIP120/121/122 TIP 122 transistor transistor tip 122 tip 120 tip 122 transistor darlington TIP-120 IP122 TIP 21 transistor	PDF
IP122 Abstract: transistor darlington TIP-120 tip122c TIP120 Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP120/121/122 MEDIUM POWER LINEAR SWITCHING APPLICATIONS • Complement to TIP125/126/127 ABSOLUTE MAXIMUM RATINGS Ta = 25°C Characteristic Symbol C o lle c to r-B a s e V o lta g e : TIP120 : TIP121 : TIP122	OCR Scan	TIP120/121/122 TIP125/126/127 TIP120 TIP121 TIP122 IP122 transistor darlington TIP-120 tip122c TIP120	PDF
LB 122 Abstract: sc 1365 MPS571 MPS571B LB122 Text: 1SE D \| MOTOROLA MQ TO R C LA fc>3b72SM SC b \| XSTRS/R F T -2 1 -JS "“ • SEM ICOND UCTOR TECHNICAL DATA _ MPS571 MMBR571 The RF Line N P N Silicon High Frequency Transistors LOW N O ISE HIGH RF GA IN . designed for low noise, wide dynamic range front-end amplifiers and low-noise	OCR Scan	3b72SM MPS571 MMBR571 O-226AA A/500 LB 122 sc 1365 MPS571B LB122	PDF
transistor m4a Abstract: No abstract text available Text: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR TIPI 25/126/127 MEDIUM POWER LINEAR SWITCHING APPLICATIONS • Complement to TIPI 20/121/122 ABSOLUTE MAXIMUM RATINGS Ta = 25°C Characteristic Collector-Base Voltage: TIP125 : TIP126 : TIP127 Collector-Emitter Voltage	OCR Scan	TIP125 TIP126 TIP127 300pis, transistor m4a	PDF
tip15 Abstract: tip122 data tip12 Text: MOTOROLA Order this document by TI P120/D SEMICONDUCTOR TECHNICAL DATA Plastic M edium -Pow er Com plem entary Silicon Transistors . . . d e sig ned for g e n e ra l-p u rp o s e am p lifie r and lo w -s p e e d sw itch ing applications. • • High DC C u rre n t G ain —	OCR Scan	P120/D 21A-06 O-220AB tip15 tip122 data tip12	PDF
LB 122 transistor Abstract: No abstract text available Text: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ISSUE 3 -JU N E 94 FEATURES * 4.5 Am ps continuous current * * Up to 20 Am ps peak current Very lo w saturation voltage * * * Excellent gain up to 20 Am ps Very lo w leakage Exceptional gain linearity down to 10mA	OCR Scan	-10mA, 50MHz -400mA 400mA, 300jis. ZTX949 LB 122 transistor	PDF
TIP177 Abstract: LB 122 transistor TIP 126 tip127 Text: PNP EPITAXIAL DARLINGTON TRANSISTOR TIPI 25/126/127 MEDIUM POWER LINEAR SWITCHING APPLICATIONS • Complement to TIPI 20/121/122 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Collector-Base Voltage :TIP125 Rating : TIP 126 ' TIP177 Collector Emitter Voltage	OCR Scan	TIP125 TIP177 TIP126 TIP127 TI000 -100V, -12mA -20mA LB 122 transistor TIP 126	PDF
LB 122 transistor To-92 Abstract: L 3005 TRANSISTOR LB 122 transistor transistor 3005 PN29G7A Text: PN29G7A PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISITOR • Collector-Emitter Voltage: VCEo=60V • Collector Dissipation: Pc max =625mW TO -92 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol C o llecto r-Base Voltage Collector-Em itter Voltage	OCR Scan	PN29G7A 625mW PN2907A LB 122 transistor To-92 L 3005 TRANSISTOR LB 122 transistor transistor 3005 PN29G7A	PDF

LB 122 transistor Abstract: No abstract text available Text: TIP125/126/127 PNP EPITAXIAL DARLINGTON TRANSISTOR MEDIUM POWER TRANSISTOR SWITCHING APPLICATIONS • C om plem ent to TIP 120/121/122 ABSOLUTE MAXIMUM RATINGS Characteristic Sym bol C ollecto r Base Voltage : TIP 1 25 Rating Unit -60 V : TIP126 -80 V : TIP127	OCR Scan	TIP125/126/127 TIP126 TIP127 TIP125 LB 122 transistor	PDF
CJD122 Abstract: CJD127 transistor C4 016 Text: Central" C JD 122 NPN C JD 127 PNP Semiconductor Corp. COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD122, CJD127 types are Complementary Silicon Power Darlington Transistors manufactured in a surface mount package designed for low	OCR Scan	cjd122 cjd127 CJD122, CJD122) CJD127) IHG017M2 transistor C4 016	PDF
Untitled Abstract: No abstract text available Text: Central" CJD200 NPN CJD210 PNP Sem iconductor Corp. COMPLEMENTARY SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD200, CJD210 types are Complementary Silicon Power Transistors manufactured in a surface mount package designed for high current	OCR Scan	CJD200 CJD210 CJD200, CJD210)	PDF
Untitled Abstract: No abstract text available Text: Central CJD200 NPN CJD210 PNP semiconductor Corp. COMPLEMENTARY SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD200, CJD210 types are Complementary Silicon Power Transistors manufactured in a surface mount package designed for high current	OCR Scan	CJD200 CJD210 CJD200, CD210)	PDF
LB 124 transistor Abstract: LB 122 transistor Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1706AB GENERAL DESCRIPTION High-voltage, high-speed switching npn transistor in a plastic envelope suitable for surface mounting, intended for use in high frequency electronic lighting ballast applications.	OCR Scan	BU1706AB LB 124 transistor LB 122 transistor	PDF
Untitled Abstract: No abstract text available Text: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR TIPI 25/126/127 MEDIUM POWER LINEAR SWITCHING APPLICATIONS • Complement to T IP I 20/121/122 ABSOLUTE MAXIMUM RATINGS Ta = 25 °C Symbol Rating Unit V CBO -6 0 -8 0 - 100 V V V VcEO -6 0 -8 0 - 100 V V V V A	OCR Scan	TIP125 TIP126 TIP127 TIP125/126/127	PDF
LB 122 transistor Abstract: No abstract text available Text: KSB834 PNP SILICON EPITAXIAL TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 • Complement to KSD880 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Collector-Base Voltage Collector-Emitier Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation T a=2 5 T ;	OCR Scan	KSB834 KSD880 O-220 LB 122 transistor	PDF
Untitled Abstract: No abstract text available Text: ! HARRIS SEMICON] SECTOR File Number 2332 SbE D • 4302571 0D4G5fl7 122 H H A S 2N6547 7=35 - / 9 15-Ampere Power-Switching Transistor Feature*: TERM INAL DESIGNATION ■ 700% High temperature tested for 100° C parameters ■Fast switching speed ■High voltage rating V'c e x = 450V	OCR Scan	2N6547 15-Ampere 2N6547 LI3Q2271	PDF
Untitled Abstract: No abstract text available Text: FZT948 FZT949 SOT223 PNP SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS — - - ISSU E 2 - NOVEMBER 1995_ FEATURES E x tre m e ly lo w e q u iv a le n t o n -re sista n ce; RCE(satl * 6 A m p s c o n tin u o u s cu rre n t	OCR Scan	OT223 FZT948 FZT949 Tamb-25	PDF
Untitled Abstract: No abstract text available Text: SOT223 PNP SILICON PLANAR HIGH CURRENTj HIGH PERFORMANCE TRANSISTORS ISSUE 2 - NOVEMBER 1995_;_ ' FEATURES * Extremely lo w equivalent on-resistance; RCHsat) * 6 Am ps continuous current * * * Up to 20 A m ps peak current Very lo w saturation voltage	OCR Scan	OT223 FZT948 FZT949 100SJ TJ70S7fl	PDF

LB 122 TRANSISTOR Search Results

LB 122 TRANSISTOR Result Highlights (5)

LB 122 TRANSISTOR Datasheets Context Search

LB 122 transistor

LB 122 transistor

LB 122 transistor

tip127 darlington

LB 122 transistor

transistor 42t

TIP 122 transistor

IP122

LB 122

transistor m4a

tip15

LB 122 transistor

TIP177

LB 122 transistor To-92

LB 122 transistor

CJD122

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LB 124 transistor

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LB 122 transistor

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