LB 122 TRANSISTOR Search Results

LB 122 transistor

Abstract: LB 122 NPN TRANSISTOR LB 122 NPN LB 121 NPN TRANSISTOR LB 127 transistor tip122 tip120 TIP 122 transistor TIP 122 transistor tip 122
Contextual Info: NPN EPITAXIAL DARLINGTON TRANSISTOR TIPI 20/121/122 MEDIUM POWER LINEAR SWITCHING APPLICATIONS • Complementary to TIP125/126/127 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Collector-Base Voltage : TIP120 Rating : TIP121 : TIP122 Collector-Emitter Voltag»

LB 122 transistor

Abstract: LB 122 NPN TRANSISTOR
Contextual Info: NPN EPITAXIAL DARLINGTON TRANSISTOR TIP120/121/122 MEDIUM POWER TRANSISTOR SWITCHING APPLICATIONS • C om plem entary to TIP 1 25/126/127 ABSOLUTE MAXIMUM RATINGS C h a ra c te rist: TIP 1 20 C ollector-B ase V oltage : TIP 1 21 : TIP122 C ollector-E m ltter V o lta g ' TIP120

LB 122 transistor

Abstract: LB 122 NPN TRANSISTOR TIP 122 transistor TIP 122 100 V LB 121 NPN TRANSISTOR NPN Transistor VCEO 80V 100V tip120 to-220 npn darlington TRANSISTOR tip122 TIP120 TIP121
Contextual Info: TIP I 20/121/122 NPN EPITAXIAL DARLINGTON TRANSISTOR MEDIUM POWER TRANSISTOR SWITCHING APPLICATIONS • C om plem entary to TIP 1 25/126/127 ABSOLUTE MAXIMUM RATINGS Characterist TIP120 TIP121 C ollector-Base Voltage Sym bol Rating V c bO TIP122 C ollector-E m ltter Voltag

tip127 darlington

Abstract: TIP127 TIP122 TIP120 TIP121 TIP125 TIP126 tip122 tip127
Contextual Info: SAN YO NPN TIP120 TIP121 TIP122 SEMICONDUCTOR DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS PNP TIP125 TIP126 TIP127 60-80-100 VOLTS, 5 AMPERE HIGH CURRENT GAIN hFE = 2500 typ. @3V, 3A LOW SATURATION VOLTAGE V c e S A T = 1.0V typ. @2.5A MONOLITHIC CONSTRUCTION WITH BUILT-IN

LB 122 transistor

Abstract: LB 122 NPN TRANSISTOR
Contextual Info: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIPI 20/121/122 MEDIUM POWER LINEAR SWITCHING APPLICATIONS TO -220 • Complement to TIPI25/126/127 ABSOLUTE MAXIMUM RATINGS Ta = 25°C Characteristic Rating Unit V CBO 60 80 100 V V V V cE O 60 80 100 5 5 8 120

transistor 42t

Abstract: 2C5339 2C6193 chip die npn transistor
Contextual Info: 5-A PNP Power Transistor Chips 2C6193 FEATURES CHIP TYPE: AL • Epitaxial, Planar Design • Contact Metallization: Base, Emitter - Aluminum - 50,000 A Nominal Collector - Gold - 3,000 A Nominal • Die Thickness - 10 Mils Nominal • Complement to NPN 2C5339

TIP 122 transistor

Abstract: transistor tip 122 tip 120 tip 122 transistor darlington TIP-120 IP122 TIP 21 transistor
Contextual Info: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR T IP I 20/121/122 MEDIUM POWER LINEAR SWITCHING APPLICATIONS • C o m p le m e n t lo T IP I 25/126/127 ABSOLUTE MAXIMUM RATINGS i C haracteristic S ym bol C o lle c to r-B a s e V o lta g e : TIP120 R ating 60

IP122

Abstract: transistor darlington TIP-120 tip122c TIP120
Contextual Info: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP120/121/122 MEDIUM POWER LINEAR SWITCHING APPLICATIONS • Complement to TIP125/126/127 ABSOLUTE MAXIMUM RATINGS Ta = 25°C Characteristic Symbol C o lle c to r-B a s e V o lta g e : TIP120 : TIP121 : TIP122

LB 122

Abstract: sc 1365 MPS571 MPS571B LB122
Contextual Info: 1SE D | MOTOROLA MQ TO R C LA fc>3b72SM SC b | XSTRS/R F T -2 1 -JS "“ • SEM ICOND UCTOR TECHNICAL DATA _ MPS571 MMBR571 The RF Line N P N Silicon High Frequency Transistors LOW N O ISE HIGH RF GA IN . designed for low noise, wide dynamic range front-end amplifiers and low-noise

transistor m4a

Contextual Info: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR TIPI 25/126/127 MEDIUM POWER LINEAR SWITCHING APPLICATIONS • Complement to TIPI 20/121/122 ABSOLUTE MAXIMUM RATINGS Ta = 25°C Characteristic Collector-Base Voltage: TIP125 : TIP126 : TIP127 Collector-Emitter Voltage

tip15

Abstract: tip122 data tip12
Contextual Info: MOTOROLA Order this document by TI P120/D SEMICONDUCTOR TECHNICAL DATA Plastic M edium -Pow er Com plem entary Silicon Transistors . . . d e sig ned for g e n e ra l-p u rp o s e am p lifie r and lo w -s p e e d sw itch ing applications. • • High DC C u rre n t G ain —

LB 122 transistor

Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ISSUE 3 -JU N E 94 FEATURES * 4.5 Am ps continuous current * * Up to 20 Am ps peak current Very lo w saturation voltage * * * Excellent gain up to 20 Am ps Very lo w leakage Exceptional gain linearity down to 10mA

TIP177

Abstract: LB 122 transistor TIP 126 tip127
Contextual Info: PNP EPITAXIAL DARLINGTON TRANSISTOR TIPI 25/126/127 MEDIUM POWER LINEAR SWITCHING APPLICATIONS • Complement to TIPI 20/121/122 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Collector-Base Voltage :TIP125 Rating : TIP 126 ' TIP177 Collector Emitter Voltage

LB 122 transistor To-92

Abstract: L 3005 TRANSISTOR LB 122 transistor transistor 3005 PN29G7A
Contextual Info: PN29G7A PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISITOR • Collector-Emitter Voltage: VCEo=60V • Collector Dissipation: Pc max =625mW TO -92 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol C o llecto r-Base Voltage Collector-Em itter Voltage

LB 122 transistor

Contextual Info: TIP125/126/127 PNP EPITAXIAL DARLINGTON TRANSISTOR MEDIUM POWER TRANSISTOR SWITCHING APPLICATIONS • C om plem ent to TIP 120/121/122 ABSOLUTE MAXIMUM RATINGS Characteristic Sym bol C ollecto r Base Voltage : TIP 1 25 Rating Unit -60 V : TIP126 -80 V : TIP127

CJD122

Abstract: CJD127 transistor C4 016
Contextual Info: Central" C JD 122 NPN C JD 127 PNP Semiconductor Corp. COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD122, CJD127 types are Complementary Silicon Power Darlington Transistors manufactured in a surface mount package designed for low

Contextual Info: Central" CJD200 NPN CJD210 PNP Sem iconductor Corp. COMPLEMENTARY SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD200, CJD210 types are Complementary Silicon Power Transistors manufactured in a surface mount package designed for high current

Contextual Info: Central CJD200 NPN CJD210 PNP semiconductor Corp. COMPLEMENTARY SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD200, CJD210 types are Complementary Silicon Power Transistors manufactured in a surface mount package designed for high current

LB 124 transistor

Abstract: LB 122 transistor
Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1706AB GENERAL DESCRIPTION High-voltage, high-speed switching npn transistor in a plastic envelope suitable for surface mounting, intended for use in high frequency electronic lighting ballast applications.

Contextual Info: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR TIPI 25/126/127 MEDIUM POWER LINEAR SWITCHING APPLICATIONS • Complement to T IP I 20/121/122 ABSOLUTE MAXIMUM RATINGS Ta = 25 °C Symbol Rating Unit V CBO -6 0 -8 0 - 100 V V V VcEO -6 0 -8 0 - 100 V V V V A

LB 122 transistor

Contextual Info: KSB834 PNP SILICON EPITAXIAL TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 • Complement to KSD880 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Collector-Base Voltage Collector-Emitier Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation T a=2 5 T ;

Contextual Info: ! HARRIS SEMICON] SECTOR File Number 2332 SbE D • 4302571 0D4G5fl7 122 H H A S 2N6547 7=35 - / 9 15-Ampere Power-Switching Transistor Feature*: TERM INAL DESIGNATION ■ 700% High temperature tested for 100° C parameters ■Fast switching speed ■High voltage rating V'c e x = 450V

Contextual Info: FZT948 FZT949 SOT223 PNP SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS *— - - ISSU E 2 - NOVEMBER 1995_ FEATURES * E x tre m e ly lo w e q u iv a le n t o n -re sista n ce; RCE(satl * 6 A m p s c o n tin u o u s cu rre n t

Contextual Info: SOT223 PNP SILICON PLANAR HIGH CURRENTj HIGH PERFORMANCE TRANSISTORS ISSUE 2 - NOVEMBER 1995_;_ ' FEATURES * Extremely lo w equivalent on-resistance; RCHsat) * 6 Am ps continuous current * * * Up to 20 A m ps peak current Very lo w saturation voltage