LASER SILICON DETECTOR Search Results
LASER SILICON DETECTOR Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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TPS3803G15DCKR |
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Low Power Voltage Detector 5-SC70 |
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TPS3803-01QDCKREP |
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Single-Channel Voltage Detector 5-SC70 -40 to 125 |
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TPS3803G15QDCKRQ1 |
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Automotive Single-Channel Voltage Detectors 5-SC70 -40 to 125 |
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TPS3710DSER |
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Wide-VIN Voltage Detector 6-WSON -40 to 125 |
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TPS3803-01DCKRG4 |
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Low Power Voltage Detector 5-SC70 -40 to 85 |
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LASER SILICON DETECTOR Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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HPI-14262Contextual Info: Laser detectors KODENSHI HPI-14262 DIMENSIONS Unit : mm HPI-14262 is silicon PIN photodiodes for detecting laser beam. HPI-14262 has active areas for tracking on both sides of four segmented photodiodes. FEATURES •Six segmented photodiodes APPLICATIONS |
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HPI-14262 HPI-14262 1000lx 000lx 680nm 2856K | |
optical LASER PICK UP
Abstract: HPI-3663 3663
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HPI-3663 HPI-3663 000lx VR10V VR10V optical LASER PICK UP 3663 | |
Contextual Info: Laser Diodes 500um General PurposePhotoDiodes Silicon PhotoDiodes 1 mmDiameter Diameter InGaAs PD-LD Inc. offers a 500um diameter photoconductive Silicon Photodiode suitable for applications requiring response times of up to 6nsec. The planar diffused device |
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500um 500um 350nm 1100nm 105/125MMF | |
Contextual Info: TXPI 1223 P-Type Silicon PIN Quadrant Detector 14 mm Diameter Active Area DESCRIPTION FEATURES This is a Silicon P-Type PIN Quadrant detector designed for use in precision guidance and laser tracking applications. High Responsivity @ 1.06 :m, 0.45 A/W typical |
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-65oC 125oC -55oC 100oC 260oC, | |
Contextual Info: TXPI 1241 P-Type Silicon PIN Quadrant Detector 11.4 mm Diameter Active Area DESCRIPTION FEATURES This is a Silicon P-Type PIN Quadrant detector designed for use in precision guidance and laser tracking applications. High Responsivity @ 1.06 :m, 0.45 A/W typical |
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-65oC 125oC -54oC 260oC, | |
Contextual Info: Silicon Photodetector Series 3T EXTENDED IR RESPONSE HIGH SPEED 3T series photodetectors are specifically designed for high speed, infra-red laser pulse detection. The detector structure designed to be fully depleted at 60 volts reverse bias, uses high resistivity silicon to achieve very low capacitance. The |
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200mA OSD15-3T OSD35-3T OSD50-3T OSD60-3T OSD100-3T | |
Contextual Info: TXPI 1274 P-Type Silicon PIN Quadrant Detector 3.5 mm Diameter Active Area DESCRIPTION FEATURES This is a Silicon P-Type PIN Quadrant detector designed for use in precision guidance and laser tracking applications. High Responsivity @ 1.06 :m, 0.45 A/W typical |
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-54oC 125oC 100oC 260oC, | |
Contextual Info: TOX 9111/TOX 911 Silicon Photodiodes *701 Texas Optoelectronics, Inc. DESCRIPTION Formerly S37/S38 FEATURES The TOX 9111 and TOX 9112 large area p-silicon photodiodes are used in many laser and infrared systems. These detectors feature low noise and high responsivity. Both use guard ring |
OCR Scan |
9111/TOX S37/S38 | |
Contextual Info: im tu t TOX 9111/TOX 9112 Silicon Photodiodes Toxam Formerly S37/S38 DESCRIPTION FEATURES The TOX 9111 and TOX 9112 large area p-silicon photodiodes are used in many laser and infrared systems. These detectors feature low noise and high responsivity. Both use guard ring |
OCR Scan |
9111/TOX S37/S38 000D524 | |
Contextual Info: DATASHEET Photon Detection YAG YAG-444-4AH Silicon PIN Quadrant Detector Key Features and Benefits The YAG series high-performance Si PIN photodiodes are well-suited for applications such as munition guidance, laser spot tracking and others. E T YAG series of Silicon PIN quadrant detectors are |
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YAG-444-4AH YAG-444-4AH-Rev | |
Contextual Info: TXPI 1234 P-Type Silicon PIN Quadrant Detector 17 mm Diameter Active Area DESCRIPTION FEATURES This is a Silicon P-Type PIN Quadrant detector designed for use in precision guidance and laser tracking and alignment applications. High Responsivity @ 1.06 :m, 0.45 A/W typical |
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-65oC 125oC -55oC 100oC 260oC, | |
Contextual Info: KODENSHI CORP. 25E D S2M2bDa [100012=1 1 U T-'H}'S'3 -i f - LASER DETECTORS DIMENSIONS Unit: mm HPI-236K 2365(is U - + f - f c '- A # f f i ( 7 ) '> lJ = l> P IN J g 7 * (DD JiDD t To KCL h HPI-2361, 2365 are silicon PIN photodiodes for detecting laser beam. HPI-2361, 2365 have active areas for tracking |
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HPI-236K HPI-2361, 780nm) HPi-2361 2856Kffl 5242b0fl HPI-2361 HPI-2365 | |
Contextual Info: TXPI 1233 P-Type Silicon PIN Quadrant Detector 14 mm Diameter Active Area DESCRIPTION FEATURES This is a Silicon P-Type PIN Quadrant detector designed for use in precision guidance and laser tracking and alignment applications. High Responsivity @ 1.06 :m, 0.45 A/W typical |
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-65oC 125oC -55oC 100oC 260oC, | |
Contextual Info: Detectors H2 / H3 / H4 / H5 Series Silicon and InGaAs-APD Receiver Description The H2/H3/H4/H5-Series includes a Silicon or InGaAs Avalanche Photodiode with an optimized low noise hybrid preamplifier for the use in high speed, low light detection, in laser range finding, LIDAR, medical and analytical applications. Housed |
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SAR500, SAR1500 SAT800, IAE200 | |
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Contextual Info: Laser Diodes Standard-Area Silicon PIN Photodiodes 500µm PD-LD Inc. offers a variety of standard and custom PIN Photodiodes and APDs in fiber coupled packages. The semiconductors offered are of proven manufacture and design. Our Silicon devices cover the optical spectrum |
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1100nm, ld/si-pin-pd-500um-high-speed | |
IAG200
Abstract: SAR1500H3 IAG080H2
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SAR500, SAR1500 SAT800, IAG200 SAR1500H3 IAG080H2 | |
HSL276AContextual Info: HSL276A Silicon Schottky Barrier Diode for Detector REJ03G0528-0100 Rev.1.00 Feb 09, 2005 Features • High forward current, Low capacitance. • Extremely small Flat Lead Package EFP is suitable for surface mount design. Ordering Information Type No. Laser Mark |
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HSL276A REJ03G0528-0100 PXSF0002ZA-A Unit2607 HSL276A | |
Contextual Info: HSL276A Silicon Schottky Barrier Diode for Detector REJ03G0528-0100 Rev.1.00 Feb 09, 2005 Features • High forward current, Low capacitance. • Extremely small Flat Lead Package EFP is suitable for surface mount design. Ordering Information Type No. Laser Mark |
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HSL276A REJ03G0528-0100 HSL276A PXSF0002ZA-A | |
IAG080H0
Abstract: IAG080
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SAR500, SAR1500 SAT800, IAG080 IAG200 IAG080H0 | |
9107
Abstract: C30810
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300nm 100mm² C30810 3x10-13 5x10-13 com/catalog/tox9107/tox9107 9107 C30810 | |
HSD276A
Abstract: diode hitachi schottky DSA003640
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HSD276A ADE-208-1385 HSD276A diode hitachi schottky DSA003640 | |
OSD1-3TContextual Info: High Speed Extended IR response Series 3T 3T series photodetectors are specifically designed for high speed, infra-red laser pulse detection. The detector structure designed to be fully depleted at 60 volts reverse bias, uses high resistivity silicon to achieve very low |
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OSD15-3T OSD35-3T OSD50-3T OSD60-3T OSD100-3T 0e-13 6e-13 9e-13 8e-13 OSD1-3T | |
Contextual Info: «O I T0X9107 Silicon PIN Photodetector Taxas Optoelectronics, Inc. DESCRIPTION FEATURES • • • • The TOX 9107 is a large area, broad band detector application for both m ilitary and commercial users including HeNe and GaAs laser systems fo r range finding, data |
OCR Scan |
T0X9107 C30810 000D524 IH375) | |
QD100-4XContextual Info: Silicon Photodetector Series 4X HIGH SPEED 1064 NM PULSE SENSING The 4X series of photodetectors are designed specifically for sensing high speed 1064 nm Nd YAG laser pulses. The detector structure is designed to be fully depleted at 150 volts reverse bias and offers high |
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200mA QD320-4X* QD100-4X |