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    LASER DIODE 808 2 PIN 1000 MW Search Results

    LASER DIODE 808 2 PIN 1000 MW Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    LASER DIODE 808 2 PIN 1000 MW Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    808nm 1W laser diode

    Abstract: M9-808-1000-03X 808nm 1W 808 nm 1000 mw 2 pins 808 nm 1000 mw laser diode 808 nm 1000 mw 1w laser diode 830 nm laser diode 808nm
    Text: Product Specifications Features x 1W CW output power. x Fast-axis Collimation x High Quality, Reliability, & Performance M9-808-1000-03X 2-pin 9mm TO-can, 808nm Multi-Mode Laser Diode With Micro-lens, 50Njm emitter 1W Description: Applications x Solid State Pumping


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    M9-808-1000-03X 808nm 808nm 1W laser diode 808nm 1W 808 nm 1000 mw 2 pins 808 nm 1000 mw laser diode 808 nm 1000 mw 1w laser diode 830 nm laser diode 808nm PDF

    Laser Diode 808 2 pin 1000 mw

    Abstract: 808 nm 1000 mw laser diode CW laser diode 808 nm tunable lasers diode applications LD-808-500C-C LASER DISTANCE METER 808 nm 1000 mw Laser-Diode 808 Laser Diode 808 nm Laser Diode LD Catalog
    Text: TUNABLE LASER DIODES High-Power Laser Diodes Fiber Pigtailed HHL TO-3 LASER DIODES Key Features • Longer laser diode lifetime due to aluminum free device structures* • Visible, near IR and infrared laser diodes with center wavelengths of 670, 808, 980 and 1930 nm


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    Laser Diode 808 2 pin 1000 mw

    Abstract: CW laser diode 808 nm 1200 mw 808 nm 1000 mw 808 nm 1000 mw laser diode
    Text: High Power CW Laser Diode LCG-808-1000M-9N FEATURES High-efficiency MQW structure Wavelength: 808 nm Typ. Optical Power: 1000 mW, CW Integrated Monitor Diode Standard Package: 9 mm ∅ APPLICATIONS Medical Printing Material Processing Illumination Measurement


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    LCG-808-1000M-9N lcg-808-1000m-9n Laser Diode 808 2 pin 1000 mw CW laser diode 808 nm 1200 mw 808 nm 1000 mw 808 nm 1000 mw laser diode PDF

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    Abstract: No abstract text available
    Text: High Power CW Laser Diode LCG-808-1000M-9N FEATURES High-efficiency MQW structure Wavelength: 808 nm Typ. Optical Powrer: 1000 mW, CW Integrated Monitordiode Standard Package: 9 mm ∅ APPLICATIONS Medical Printing Material Processing Illumination Measurement


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    LCG-808-1000M-9N lcg-808-1000m-9n PDF

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    Abstract: No abstract text available
    Text: High Power CW Laser Diode LCG-808-1000M-9N FEATURES High-efficiency MQW structure Wavelength: 808 nm Typ. Optical Powrer: 1000 mW, CW Integrated Monitordiode Standard Package: 9 mm ∅ APPLICATIONS Medical Printing Material Processing Illumination Measurement


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    LCG-808-1000M-9N lcg-808-1000m-9n PDF

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    Abstract: No abstract text available
    Text: Preliminary Data Sheet High Power CW Laser Diode LCG-808-1000M-9N Features - High-efficiency MQW structure Wavelength: 808 nm Typ. Optical Power: 1000 mW, CW Integrated Monitordiode Standard Package: 9 mm ∅ Applications - Medical Printing Material Processing


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    LCG-808-1000M-9N LCG-808-1000M-9N PDF

    808 nm 1000 mw 2 pins

    Abstract: Laser Diode 808 2 pin 1000 mw 808 nm 1000 mw 2 Wavelength Laser Diode 808 nm 100 mw peltier cooler 1000mW laser 1000mW laser diode chip thermistor medical device Laser Diode 808 2000 mw
    Text: SLD323XT 1W High Power Laser Diode Description The SLD323XT is a high power, gain-guided laser diode produced by MOCVD method∗1. Compared to the SLD300 Series, this laser diode has a high brightness output with a doubled optical density which can be achived by QW-SCH structure∗2.


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    SLD323XT SLD323XT SLD300 65MAX M-273 LO-10) 808 nm 1000 mw 2 pins Laser Diode 808 2 pin 1000 mw 808 nm 1000 mw 2 Wavelength Laser Diode 808 nm 100 mw peltier cooler 1000mW laser 1000mW laser diode chip thermistor medical device Laser Diode 808 2000 mw PDF

    SLD323XT

    Abstract: 1000mW laser SLD300 SLD323XT-1 SLD323XT-2 SLD323XT-21 SLD323XT-24 SLD323XT-25 SLD323XT-3 808 nm 1000 mw laser diode
    Text: SLD323XT High Power Density 1W Laser Diode Description The SLD323XT is a high power, gain-guided laser diode produced by MOCVD method∗1. Compared to the SLD300 Series, this laser diode has a high brightness output with a doubled optical density which can be


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    SLD323XT SLD323XT SLD300 65MAX M-273 LO-10) 1000mW laser SLD323XT-1 SLD323XT-2 SLD323XT-21 SLD323XT-24 SLD323XT-25 SLD323XT-3 808 nm 1000 mw laser diode PDF

    1090D

    Abstract: 1000mW laser SLD300 SLD323V SLD323V-1 SLD323V-2 SLD323V-21 SLD323V-24 SLD323V-25 SLD323V-3
    Text: SLD323V High Power Density 1W Laser Diode Description The SLD323V is a high power, gain-guided laser diode produced by MOCVD method∗1. Compared to the SLD300 Series, this laser diode has a high brightness output with a doubled optical density which can be


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    SLD323V SLD323V SLD300 M-248 LO-11) 1090D 1000mW laser SLD323V-1 SLD323V-2 SLD323V-21 SLD323V-24 SLD323V-25 SLD323V-3 PDF

    808 nm 1000 mw

    Abstract: 1000mW laser diode SLD300 SLD323V SLD323V-1 SLD323V-2 SLD323V-21 SLD323V-24 SLD323V-25 SLD323V-3
    Text: SLD323V High Power Density 1W Laser Diode Description The SLD323V is a high power, gain-guided laser diode produced by MOCVD method∗1. Compared to the SLD300 Series, this laser diode has a high brightness output with a doubled optical density which can be


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    SLD323V SLD323V SLD300 structur00 M-248 LO-11) 808 nm 1000 mw 1000mW laser diode SLD323V-1 SLD323V-2 SLD323V-21 SLD323V-24 SLD323V-25 SLD323V-3 PDF

    SLD300

    Abstract: SLD323XT SLD323XT-1 SLD323XT-2 SLD323XT-21 SLD323XT-24 SLD323XT-3
    Text: SLD323XT 1W High Power Laser Diode Description The SLD323XT is a high power, gain-guided laser diode produced by MOCVD method∗1. Compared to the SLD300 Series, this laser diode has a high brightness output with a doubled optical density which can be achived by QW-SCH structure∗2.


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    SLD323XT SLD323XT SLD300 M-273 LO-10) 65MAX M-273 SLD323XT-1 SLD323XT-2 SLD323XT-21 SLD323XT-24 SLD323XT-3 PDF

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    Abstract: No abstract text available
    Text: rev.1.0 16.03.2015 S8081WG Description S8081WG is a infrared laser diode emitting at typically 808 nm with rated output power of 1 W cw, in a standard 9 mm TO package with flat window cap. Maximum Ratings T CASE = 25°C Parameter Symbol Values Unit Output power


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    S8081WG S8081WG PDF

    808 nm 100 mw

    Abstract: SLD300 SLD323V SLD323V-1 SLD323V-2 SLD323V-21 SLD323V-24 SLD323V-3 1000mW laser diode 808 nm 1000 mw
    Text: SLD323V High Power Density 1W Laser Diode Description The SLD323V is a high power, gain-guided laser diode produced by MOCVD method∗1. Compared to the SLD300 Series, this laser diode has a high brightness output with a doubled optical density which can be achieved by QW-SCH structure∗2.


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    SLD323V SLD323V SLD300 M-248 LO-11) 808 nm 100 mw SLD323V-1 SLD323V-2 SLD323V-21 SLD323V-24 SLD323V-3 1000mW laser diode 808 nm 1000 mw PDF

    dvd laser diode 10 pin 700 mw

    Abstract: TO56 CD pickup laser diode diode product list 131050 6311-7212-AU 6350-1271-AU 6511-7261-AU 6521-2112-AU 6550-5151-DV
    Text: 富伸電子股份有限公司 SHANGHAI LECC OPTO. CO., LTD. Address :Xiangji Industrial Park,Zhuanghang Town ,Fengxian District, Shanghai, China 上海市奉賢區莊行鎮相計工業區 Tel:+86-21-57407400 Fax:+86-21-57407403 E-Mail:jillian@lecc.com.tw


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    6350-1271-AU 6350-1271-AU-50 6311-7212-AU 6550-7241-BA 6550-7241-AU-50 6550-5151-DV 6511-7261-AU 6521-2112-AU 30barcode List2005-11-8 dvd laser diode 10 pin 700 mw TO56 CD pickup laser diode diode product list 131050 6311-7212-AU 6350-1271-AU 6511-7261-AU 6521-2112-AU 6550-5151-DV PDF

    Laser Diode 808 2 pin 1000 mw

    Abstract: 808 nm 1000 mw RLT808100GS 808 nm 1000 mw laser diode
    Text: ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: office@roithner-laser.com http://www.roithner-laser.com RLT808100GS TECHNICAL DATA High Power Infrared Laserdiode Structure: AlGaAs/GaAs quantum well, aperture 3 x 1 µm


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    RLT808100GS Laser Diode 808 2 pin 1000 mw 808 nm 1000 mw RLT808100GS 808 nm 1000 mw laser diode PDF

    photovoltaic transducer

    Abstract: PPC-6E jdsu 808 nm 100 mw ppc6eST diode 6e photovoltaic sensor laser diode jdsu power source jdsu 808 nm 1000 mw
    Text: PHOTONIC POWER 6 V Photovoltaic Power Converter PPC-6E Key Features • Up to 100 mA at 5 V • Up to 500 mW electrical power • Up to 6 volts output • Optimized for 810 nm source • Complete electrical isolation Applications • Optically powered current transducer


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    498-JDSU 5378-JDSU photovoltaic transducer PPC-6E jdsu 808 nm 100 mw ppc6eST diode 6e photovoltaic sensor laser diode jdsu power source jdsu 808 nm 1000 mw PDF

    electroabsorption modulator

    Abstract: electroabsorption modulator laser diode electroabsorption 741 metal package Electro-absorption modulator
    Text: VITESSE SEMICONDUCTOR CORPORATION Advance Product Information VSC7989 SONET/SDH 10.7Gb/s Electroabsorption Modulator/Laser Diode Driver Features • Rise Times Less Than 35ps • Single-Supply • High-Speed Operation Up to 10.7Gb/s NRZ Data • CML-Compatible Data Inputs


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    VSC7989 VSC7989 G52356, electroabsorption modulator electroabsorption modulator laser diode electroabsorption 741 metal package Electro-absorption modulator PDF

    vs-s1558

    Abstract: vss 1558 electroabsorption modulator laser diode 10ghz modulator driver Laser Diode 808 2 pin 1000 mw VSC7991 electroabsorption modulator 2296
    Text: VITESSE SEMICONDUCTOR CORPORATION Advance Product Information VSC7991 SONET/SDH 10.7Gb/s Electroabsorption Modulator/Laser Diode Driver Features • Rise Times Less Than 30ps • Single-Supply • High-Speed Operation Up to 10.7Gb/s NRZ Data • CML-Compatible Data Inputs


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    VSC7991 VSC7991 G52321-0, vs-s1558 vss 1558 electroabsorption modulator laser diode 10ghz modulator driver Laser Diode 808 2 pin 1000 mw electroabsorption modulator 2296 PDF

    photovoltaic transducer

    Abstract: photovoltaic with current transducer 808 nm 100 mw jdsu photovoltaic sensor 4E diode ppc4e Laser Diode 808 2 pin 1000 mw laser diode jdsu 808 nm 1000 mw
    Text: PHOTONIC POWER 4 V Photovoltaic Power Converter PPC-4E Key Features • Up to 140 mA at 3.5 V • Up to 500 mW electrical power • Up to 4 volts output • Optimized for 810 nm source • Complete electrical isolation Applications • Optically powered current transducer


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    498-JDSU 5378-JDSU photovoltaic transducer photovoltaic with current transducer 808 nm 100 mw jdsu photovoltaic sensor 4E diode ppc4e Laser Diode 808 2 pin 1000 mw laser diode jdsu 808 nm 1000 mw PDF

    Untitled

    Abstract: No abstract text available
    Text: LASERS & MATERIAL PROCESSING I OPTICAL SYSTEMS I INDUSTRIAL METROLOGY I TRAFFIC SOLUTIONS I DEFENSE & CIVIL SYSTEMS Fiber-Coupled Diode Lasers qcw, passively cooled with integrated TEC JOLD-120-QPXF-2P iTEC Design 215529124 Features: Applications: • High optical output power of 120 W qcw


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    JOLD-120-QPXF-2P PDF

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    Abstract: No abstract text available
    Text: LASERS & MATERIAL PROCESSING I OPTICAL SYSTEMS I INDUSTRIAL METROLOGY I TRAFFIC SOLUTIONS I DEFENSE & CIVIL SYSTEMS Fiber-Coupled Diode Lasers cw, passively cooled with integrated TEC JOLD-75-CPXF-2P iTEC Design 215529224 Features: Applications: • High optical output power of 75 W cw


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    JOLD-75-CPXF-2P PDF

    vs-s1558

    Abstract: electroabsorption modulator laser diode Laser Diode 808 2 pin 1000 mw CD 741 Electroabsorption modulator VSC7991 EAM laser vss1558 VMOD 741 metal package
    Text: VITESSE SEMICONDUCTOR CORPORATION Advance Product Information VSC7991 SONET/SDH 10.7Gb/s Electroabsorption Modulator/Laser Diode Driver Features • Maximum Rise/Fall Times of 38ps • Single-Supply • High-Speed Operation Up to 10.7Gb/s NRZ Data • CML-Compatible Data Inputs


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    VSC7991 VSC7991 G52321-0, vs-s1558 electroabsorption modulator laser diode Laser Diode 808 2 pin 1000 mw CD 741 Electroabsorption modulator EAM laser vss1558 VMOD 741 metal package PDF

    FLD5F10NP

    Abstract: 2296 VSC7989CD
    Text: VSC7989 Data Sheet SONET/SDH 10.7Gb/s Electroabsorption Modulator/Laser Diode Driver FEATURES APPLICATIONS ● Rise and Fall Times Less Than 35ps ● SONET/SDH at 2.488Gb/s, 9.952Gb/s, 10.7Gb/s ● High-Speed Operation Up to 10.7Gb/s NRZ Data ● OC-192 Transponder Modules


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    VSC7989 488Gb/s, 952Gb/s, OC-192 G52356, FLD5F10NP 2296 VSC7989CD PDF

    SLD323

    Abstract: 808 nm 100 mw SLD300 SLD323V SLD323V-1 SLD323V-2 SLD323V-21 SLD323V-24 SLD323V-25 SLD323V-3
    Text: SONY SLD323V High Power Density 1 W Laser Diode Package Outiine_ Unit : mm Description The SLD323V is a high power, gain-guided laser diode produced by MOCVD m ethod*'. Compared to the R*r* SLD300 Series, this laser diode has a high brightness output with a doubled optical density which can be


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    SLD323V SLD323V SLD300 600mVV -101C SLD323 808 nm 100 mw SLD323V-1 SLD323V-2 SLD323V-21 SLD323V-24 SLD323V-25 SLD323V-3 PDF