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SSM6J808R
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Toshiba Electronic Devices & Storage Corporation
|
MOSFET, P-ch, -40 V, -7 A, 0.035 Ohm@10V, TSOP6F, AEC-Q101 |
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2SC2712
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Toshiba Electronic Devices & Storage Corporation
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NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=70~700 / VCE(sat)=0.25 V / AEC-Q101 / SOT-346 |
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SSM6K804R
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Toshiba Electronic Devices & Storage Corporation
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N-ch MOSFET, 40 V, 12 A, 0.012 Ω@10 V, TSOP6F, AEC-Q101 |
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DF2B7AFS
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Toshiba Electronic Devices & Storage Corporation
|
TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-923, AEC-Q101 |
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2SC3325
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Toshiba Electronic Devices & Storage Corporation
|
NPN Bipolar Transistor / VCEO=50 V / IC=0.5 A / hFE=70~240 / VCE(sat)=0.25 V / AEC-Q101 / SOT-346 |
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