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    LA MARKING CODE PNP TRANSISTOR Search Results

    LA MARKING CODE PNP TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    LA MARKING CODE PNP TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DRAF143T

    Abstract: No abstract text available
    Text: DRAF143T Tentative Total pages page DRAF143T Silicon PNP epitaxial planar type For digital circuits Marking Symbol : LA Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)


    Original     		PDF DRAF143T DRAF143T

    2SC1412

    Abstract: VE00 L1102 FMS2A "dual TRANSISTORs" transitron 2SC1412K ums2n 2SC241ZK
    Text: Transistors General Purpose Transistor Common Emitter Dual Transistors UMSlN/FMSlA *Features 1) Two 2SA1037AK chips in UMT and SMT packages. @External dimensions (Units: mm) UMSl N IMSl A 2’ Mounting cost and area can be cut in half. l Structure Epitaxial planar type


    Original     		PDF 2SA1037AK SC-88A -50/iA -50pA --12V, AC221 2SC1412 VE00 L1102 FMS2A "dual TRANSISTORs" transitron 2SC1412K ums2n 2SC241ZK

    2SC1412K

    Abstract: UMW8 2sc1412 2SC241 baw 92 FMY3 2SC2412AK 2SC141 2SC241ZK
    Text: @Features 1’ Two 2SA1037AK in UMT and SMT packages. 2‘ Mounting possible with UMT3 or SMT3 automatic mounting machines. l External dimensions Units: mm UMTl N 2OkO2 IMTl A 13t01 09kOl 065 (3 3‘ Transistor elements are independent, eliminating interference.


    Original     		PDF 2SA1037AK 13t01 09kOl SC-88 SC-74 1T106 Cl021 2SC1412K 2SA1037AK UMW8 2sc1412 2SC241 baw 92 FMY3 2SC2412AK 2SC141 2SC241ZK

    c125t

    Abstract: Ho3 501 transistor dtc323tu 94S-751-C343T transistor PNP A124G transistor KD 503 DTC343 kd 2902 kd 503 transistor DTC143TK
    Text: Transistors Digital transistors built-in resistors DTA114TE/DTA114TUA/DTA114TKA/DTA114TSA @Features 1) Built-in bias resistors enable the @External dimensions (Units: mm) DTAll4TE configuration of an inverter circuit without connecting external input resistors (see the equivalent cir-


    Original     		PDF DTA114TE/DTA114TUA/DTA114TKA/DTA114TSA 005-Lr DTA114TUA DTC343TS -50mA, f-100MHz 50/1A rat10 C343T) c125t Ho3 501 transistor dtc323tu 94S-751-C343T transistor PNP A124G transistor KD 503 DTC343 kd 2902 kd 503 transistor DTC143TK

    BF550

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF550 PNP medium frequency transistor Product specification Supersedes data of 1999 Apr 15 2004 Jan 16 Philips Semiconductors Product specification PNP medium frequency transistor BF550 FEATURES PINNING • Low current max. 25 mA


    Original     		PDF BF550 MAM256 SCA76 R75/04/pp6 BF550

    transistor marking code HF

    Abstract: 1n916 equivalent
    Text: MMBT3906FN3 PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40 Volts 250 mWatts POWER DFN 3L Unit：inch mm 0.042(1.05) 0.037(0.95) FEATURES 0.026(0.65) 0.021(0.55) • PNP epitaxial silicon, planar design • Collector-emitter voltage VCE = -40V • Collector current IC = -200mA


    Original     		PDF MMBT3906FN3 -200mA MIL-STD-750, RB500V-40 transistor marking code HF 1n916 equivalent

    TRANSISTOR MARKING YC

    Abstract: No abstract text available
    Text: MMBT3906FN3 PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40 Volts 250 mWatts POWER DFN 3L Unit：inch mm 0.042(1.05) 0.037(0.95) FEATURES 0.026(0.65) 0.022(0.55) • PNP epitaxial silicon, planar design • Collector-emitter voltage VCE = -40V • Collector current IC = -200mA


    Original     		PDF MMBT3906FN3 -200mA 2002/95/EC IEC61249 MIL-STD-750, RB500V-40 MMBT3906FN3 TRANSISTOR MARKING YC

    TRANSISTOR b1181

    Abstract: b1181 2SB1181F5
    Text: 2SB1181F5 Transistor, PNP Features Dimensions Units : mm • available in C P T F5 (SC-63) package • package marking: B1181 ★□, where ★ is hFE code and □ is lot number • hig h b re a k d o w n v o lta g e a n d la rg e c u rre n t ca p a b ility : V q e o = - 8 ° V,


    OCR Scan     		PDF 2SB1181F5 SC-63) B1181 2SD1733 2SB1181F5 TRANSISTOR b1181 b1181

    Untitled

    Abstract: No abstract text available
    Text: bbSBIBl DQ25T47 b47 « A P X N AHER PHILIPS/DISCRETE b7E J> PNP switching transistor Philips Semiconductors FEATURES Product specification PMST4403 PIN CONFIGURATION • S-mini package • High collector current. DESCRIPTION PNP silicon planar epitaxial transistor in a plastic SOT323


    OCR Scan     		PDF DQ25T47 PMST4403 OT323 MAM096 bbS3T31

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PNP medium frequency transistor BF550 FEATURES PINNING • Low curren t max. 25 mA PIN • Low voltage (max. 40 V). APPLICATIONS DESCRIPTION 1 base 2 e m itte r 3 co lle cto r • M edium freq uency applications in th ick and thin film


    OCR Scan     		PDF BF550 MAM256

    marking NC sot23

    Abstract: smd code marking sot23 RF Transistors sot-23 marking code LA SMD sot-23 MARKING CODE N C SMD MARKING CODE FEW SMD Transistors nc SOT SMD IC smd code marking 3 1 sot23 BF579
    Text: HIGH FREQUENCY SMD TRANSISTORS DESCRIPTION •Philips Components high-frequency transistors fill the gap between general purpose transistors and broadband transistors by offering transition frequencies from a few hundred megahertz to about 1 gigahertz. Applications


    OCR Scan     		PDF OT-23 BFS18 BFS19 BFS20 BF840 BF841 BF579 BF536 BF767 BF824 marking NC sot23 smd code marking sot23 RF Transistors sot-23 marking code LA SMD sot-23 MARKING CODE N C SMD MARKING CODE FEW SMD Transistors nc SOT SMD IC smd code marking 3 1 sot23

    Untitled

    Abstract: No abstract text available
    Text: 2SB1132 Transistor, PNP Features Dimensions Units : mm • available In MPT3 (MPT, SC-62) package • package marking: 2SB1132; BA*-, where ★ is hFE code 2SB1132 (MPT3) • Pc = 2 W (when mounted on 40 x 40 x 0.7 mm ceramic PCB) • low collector saturation voltage,


    OCR Scan     		PDF 2SB1132 SC-62) 2SB1132; 2SD1664 2SB1132

    301 marking code PNP transistor

    Abstract: Marking Y1 ROHM D3A transistor marking D3N marking code D3 SC-74
    Text: UMD3N IMD3A Transistor, digitai, dual, NPN and PNP, with 2 resistors Features Dimensions Units : mm available in UMT6 (UM6) and SMT6 (IMD, SC-74) packages UM D3N (UMT6) 2.0±Q,2 package marking: UMD3N and IMD3A; D3 1,3±0.1 I 0.65 package contains a PNP


    OCR Scan     		PDF SC-74) DTA114EKA) DTC114EKA) SC-70) SC-59) 301 marking code PNP transistor Marking Y1 ROHM D3A transistor marking D3N marking code D3 SC-74

    MARKING 9AB

    Abstract: 9AB TRANSISTOR Code 9CB BC859 BC846 BC856 BC860 sot 23 mark 9CB
    Text: PNP EPITAXIAL SILICON TRANSISTOR BC856/857/858/859/860 SWITCHING AND AF AMPLIFIER APPLICATIONS • SUITABLE FOR AUTOMATIC INSERTION IN THICK AND THIN-FILM CIRCUITS • LOW NOISE: BC859, BC860 • Complement to BC846 . BC8S0 SO T -2 3 ABSOLUTE MAXIMUM RATINGS Ta=25°C


    OCR Scan     		PDF BC856/857/858/859/860 BC859, BC860 BC846 BC856 BC857/860 BC858/859 MARKING 9AB 9AB TRANSISTOR Code 9CB BC859 BC846 BC856 BC860 sot 23 mark 9CB

    MARKING 3F TRANSISTOR

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Apr 07 Philips Sem iconductors 1999 Apr 12 PHILIPS Philips Semiconductors Product specification BC856W; BC857W PNP general purpose transistors FEATURES PINNING • Low current max. 100 mA


    OCR Scan     		PDF BC856W; BC857W OT323 BC846W BC847W. BC856W BC856AW BC856BW BC857W OT323) MARKING 3F TRANSISTOR

    2PB710S

    Abstract: 2pd710as 2PB710R "MARKING CODE CO" 2PB710 2PB710A 2PD602 2PD602A SC59 2PB710Q
    Text: Philips Semiconductors Product specification PNP general purpose transistors 2PB710; 2PB710A FEATURES • High collector current • Low collector-emitter saturation voltage • S-mini package. APPLICATIONS Intended for general purpose switching or amplification.


    OCR Scan     		PDF 2PB710; 2PB710A 2PD602 2PD602A MAM048 2PD710Q 2PD710R 2PD71 2PD710AQ 2PD710AR 2PB710S 2pd710as 2PB710R "MARKING CODE CO" 2PB710 2PB710A SC59 2PB710Q

    marking code 4D

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS BITÂ S y i I T ly BC859W; BC860W PNP general purpose transistors Product specification Supersedes data of 1997 Sep 03 Philips Sem iconductors 1999 Apr 12 PHILIPS Philips Semiconductors Product specification BC859W; BC860W PNP general purpose transistors


    OCR Scan     		PDF BC859W; BC860W BC860W BC850W 115002/00/04/pp8 marking code 4D

    tbc857c

    Abstract: TBC857B
    Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Jul 07 Philips Sem iconductors 1999 Apr 26 PHILIPS Philips Semiconductors Product specification PNP general purpose transistors BC856T; BC857T FEATURES PINNING • Low curren t max. 100 mA


    OCR Scan     		PDF BC856T; BC857T BC847T. BC856AT BC857AT MAM362 115002/00/02/pp8 tbc857c TBC857B

    bf550

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Jul 07 Philips Sem iconductors 1999 Apr 15 PHILIPS Philips Semiconductors Product specification PNP medium frequency transistor BF550 FEATURES PINNING • Low curren t max. 25 mA PIN • Low voltage (max. 40 V).


    OCR Scan     		PDF BF550 115002/00/03/pp8 bf550

    transistor d 1933

    Abstract: transistor marking code p2T PMST4403 VC80 marking code P2T
    Text: Hi Philips Semiconductors N bbSBTBl AHER 0 0 2 5 T 47 b 47 HIAPX PH ILIPS/D ISCR ETE b?E Product specification J> PNP switching transistor FEATURES PMST4403 PIN CONFIGURATION • S-mini package » High collector current. DESCRIPTION PNP silicon planar epitaxial


    OCR Scan     		PDF 0025T47 PMST4403 OT323 PMST4403 MAM096 transistor d 1933 transistor marking code p2T VC80 marking code P2T

    JD 1803

    Abstract: 2SA1870 100V 2A MPT3 2SA1900 2SC5053 marking code pj vat package marking code TRANSISTOR 2SA1870
    Text: 2SA1870 Transistor, PNP Features Dimensions U n its : mm • available in PSD package • low collector saturation voltage, typicallyVCE(sat) = -0.2 V a t lc/lB = -6A /-0.3A • high switching speed, typically tf = 0.17 (AS for lc = -6 A • wide safe operating area (SOA)


    OCR Scan     		PDF 2SA1870 2SA1900 JD 1803 2SA1870 100V 2A MPT3 2SC5053 marking code pj vat package marking code TRANSISTOR 2SA1870

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 35PN NPN/PNP Silicon Digital Tansistor Array »Switching circuit, inverter, interface circuit, drive circuit * Two galvanic internal isolated NPN/PNP Transistor in one package • Built In bias resistor (R ^IO kiî, R2=47kiî) Tape loading orientation


    OCR Scan     		PDF OT-363 Q62702-C2495

    sot323 marking code VL

    Abstract: PMSS3906 transistor p06
    Text: • b bS 3cì31 0025127 ÒSI « A P X N AMER PHILIPS/DISCRETE b7E Philips S em iconductors P roduct specification PNP general purpose transistor PMSS3906 FEATURES • S-mini package. DESCRIPTION PNP transistor in a plastic SOT323 package, primarily intended for use


    OCR Scan     		PDF PMSS3906 OT323 MAM096 2St131 sot323 marking code VL PMSS3906 transistor p06

    3Kp Transistor

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET BCV62 PNP general purpose double transistor Product specification Supersedes data of 1997 Jun 18 Philips Sem iconductors 1999 Apr 08 PHILIPS Philips Semiconductors Product specification PNP general purpose double transistor


    OCR Scan     		PDF BCV62 T143B BCV61. 115002/00/03/pp8 3Kp Transistor