lS21el2
Abstract: KSC2753
Text: KSC2753 KSC2753 Low Noise Amplifier for VHF/UHF • High Current Gain Bandwidth Product : fT=5GHz • NF=1.5dB, lS21el2 = 16dB at f=500MHz • NF=1.7dB, lS21el2 = 10.5dB at f=1000MHz TO-92 1 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor
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KSC2753
lS21el2
500MHz
1000MHz
lS21el2
KSC2753
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KSC2753
Abstract: No abstract text available
Text: KSC2753 KSC2753 Low Noise Amplifier for Vhf/uhf • High Current Gain Bandwidth Product : fT=5GHz • NF=1.5dB, lS21el2 = 16dB at f=500MHz • NF=1.7dB, lS21el2 = 10.5dB at f=1000MHz TO-92 1 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor
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KSC2753
lS21el2
500MHz
1000MHz
KSC2753
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TA4029CTC
Abstract: TA4032FT TB7602TU MT4S300T MT4S300U MT4S301T TA4029TU SOT-24 MT4S300 RFM12U7X
Text: 製品カタログ 2011-1 東芝半導体 製品カタログ 高周波用半導体デバイス SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 アプリケーション別推奨製品 .3~8
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BCJ0003G
BCJ0003F
TA4029CTC
TA4032FT
TB7602TU
MT4S300T
MT4S300U
MT4S301T
TA4029TU
SOT-24
MT4S300
RFM12U7X
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JDV2S31CT
Abstract: 1SV283B 1SV271 2SK1875 2sk3476 1SV128 1SV307 1SV308 DCS1800 IMT-2000
Text: 製品カタログ 2009-9 東芝半導体 製品カタログ 高周波用半導体デバイス SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 高周波用半導体デバイス 当社半導体製品につきましては格別のお引き立てを賜わり誠にありがとうございます。
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BCJ0003F
BCJ0003E
JDV2S31CT
1SV283B
1SV271
2SK1875
2sk3476
1SV128
1SV307
1SV308
DCS1800
IMT-2000
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2sc5108
Abstract: toshiba transistors catalog 2sk3476 UHF/VHF IC transceiver 2SK403 microwave Duplexer Am tuning varicap Wideband MMIC VCO covers 8 GHz to 12.5 GHz 2Sk3656 microwave transceiver 3.54 GHz
Text: 2009-9 PRODUCT GUIDE Radio-Frequency Semiconductors SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng Radio-Frequency Semiconductor Devices Thank you for using Toshiba’s semiconductor devices. As you know, semiconductor products are widely used in both home and industrial applications. This catalog covers transistors,
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BCE0003E
2sc5108
toshiba transistors catalog
2sk3476
UHF/VHF IC transceiver
2SK403
microwave Duplexer
Am tuning varicap
Wideband MMIC VCO covers 8 GHz to 12.5 GHz
2Sk3656
microwave transceiver 3.54 GHz
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sot23 1303
Abstract: IC 3263 NPN bipolar junction transistors max hfe 2000 1272 hybrid 1303 SOT23 MA4T324335
Text: Bipolar High fT Low Voltage NPN Silicon Transistors MA4T3243 Series V3.00 Case Styles Features ● ● ● ● ● ● ● Designed for 3-5 Volt Operation Useable to 6 GHz in Oscillators Useable for Low Noise, Low Voltage Driver Amplifiers Through 3 GHz Useful for Class C Amplifiers
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MA4T3243
OT-23
MA4T324335
sot23 1303
IC 3263
NPN bipolar junction transistors max hfe 2000
1272 hybrid
1303 SOT23
MA4T324335
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3sk catalog
Abstract: TE85L Toshiba
Text: Semiconductor Catalog 2012-1 Radio-Frequency Semiconductors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Recommended Products by Application . 3 to 7 1.1 Cell Phones 1.2 TV Tuners 1.3 Low-Power Radios FRS/GMRS
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BCE0003H
3sk catalog
TE85L Toshiba
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sec 2sc5088
Abstract: samsung UHF/VHF TV Tuner 2SC5066 datasheet RF Bipolar Transistor transistor 2SC5066 2SC5088 SEC MT6L04AE MT4S200T AU82 MT6L63FS
Text: 2007-9 PRODUCT GUIDE Radio-Frequency Semiconductors Radio-Frequency Semiconductor Devices Thank you for using Toshiba’s semiconductor devices. As you know, semiconductor products are widely used in both home and industrial applications. This catalog covers transistors, diodes and
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BCE0003D
S-167
BCE0003E
sec 2sc5088
samsung UHF/VHF TV Tuner
2SC5066 datasheet
RF Bipolar Transistor
transistor 2SC5066
2SC5088 SEC
MT6L04AE
MT4S200T
AU82
MT6L63FS
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MT4S300T
Abstract: TA4032FT MT3S111TU JAPANESE 2SC TRANSISTOR 2010 MT4S301T TA4029CTC TB7602CTC MT3S111P JAPANESE TRANSISTOR 2SC 2010 2sk3476
Text: 2011-1 PRODUCT GUIDE Radio-Frequency Semiconductors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Recommended Products by Application . 3 to 8 1.1 Cell Phones 1.2 TV Tuners 1.3 FRS/GMRS 1.4 Cordless Phones
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BCE0003F
MT4S300T
TA4032FT
MT3S111TU
JAPANESE 2SC TRANSISTOR 2010
MT4S301T
TA4029CTC
TB7602CTC
MT3S111P
JAPANESE TRANSISTOR 2SC 2010
2sk3476
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7415 ic pin details
Abstract: d 5287 transistor C10535E NE52118 NE52118-T1 nec 2562 k 232
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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TB2926
Abstract: tc94a92fg TC94A93MFG TC90105FG TB2915 TC90104FG tc94A96mfg TB9061FNG TC94A93 tb2929
Text: システムカタログ 2010-3 システムカタログ 車載ソリューション h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 情報・エンターテインメント Information & Entertainment クルマの未来を変える東芝の先進半導体テクノロジー
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SCJ0023E
SCJ0023D
TB2926
tc94a92fg
TC94A93MFG
TC90105FG
TB2915
TC90104FG
tc94A96mfg
TB9061FNG
TC94A93
tb2929
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7415 ic pin details
Abstract: C10535E NE52118 NE52118-T1
Text: PRELIMINARY DATA SHEET GaAs HETEROJUNCTION BIPOLAR TRANSISTOR NE52118 L to S BAND LOW NOISE AMPLIFIER NPN GaAs HBT FEATURES • For Low Noise & High Gain amplifiers NF = 1.0 dB TYP. Ga = 15.0 dB TYP. MSG = 15.0 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω
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NE52118
NE52118-T1
7415 ic pin details
C10535E
NE52118
NE52118-T1
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2SK3075 equivalent
Abstract: 10 ghz transistor 2SK3078 MT3S04T 2SC5066 MT6P03AE MT6P06E 3SK320 24lu1 transistor 2SC5066
Text: High-Frequency Devices for Mobile Communications PRODUCT GUIDE 800 MHz Band Analog and Digital Cellular High-Frequency Block Diagram Ant. RF Amp Mixer RX IF detection Prescaler VCO 1 900 MHz Buff Amp Buff Amp OSC (1) Tuning DUP Prescaler Buff Amp VCO (2) 100 MHz
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2SC5065
2SC5085
2SC5090
2SC5095
MT3S06U
MT3S07U
2SC5066
2SC5086
2SC5091
2SC5096
2SK3075 equivalent
10 ghz transistor
2SK3078
MT3S04T
2SC5066
MT6P03AE
MT6P06E
3SK320
24lu1
transistor 2SC5066
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2SC3774
Abstract: 2SC4404
Text: Ordering number : EN 2757 No.2757 ;_ 2 S C 4 4 0 4 NPN Epitaxial Planar Silicon Transistor S A N Y O ] UH F Local Oscillator, Wide-Band Amplifier Applications A pplications • UHF OSC, wide band amplifiers F eatu res • High cutoff frequency fr=5.0G H z typ
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2SC4404-applied
2SC3774
2SC4404
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BFT65
Abstract: D1279 Siemens 1414 D1275 germanium Germanium drift transistor diode a811 Siemens Halbleiter germanium transistor legiert
Text: Table of Contents Selection Guide Ordering Codes Inhaltsverzeichnis Typeniibersicht Bestellnummern Scope of Applications Technical Information Quality Specifications Einsatzhinweise Technische Angaben Qualitatsangaben Package Outlines Mounting Instructions
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TRANSISTOR K 1507
Abstract: No abstract text available
Text: Preliminary Specifications an A M P company 3 Volt, Low Noise High fT Silicon Transistor MA4T6310 Series V 2 .00 Features • • • • • SOT-23 1.5 dB Noise Figure at 0.5 mA 13 dB Gain at 1 GHz 14 GHz fT Low Cost Plastic Package Available on Tape and Reel
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MA4T6310
OT-23
TRANSISTOR K 1507
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ic 2754
Abstract: 2SC4364 2SC4401 5P J TRANSISTOR MARKING Marking TRANSISTOR 777
Text: Ordering number:EN 2754 _ 2 S C 4 4 1 NPN Epitaxial Planar Silicon Transistor VHF/UHF Mixer, Local Oscillator, Low-Voltage Amp Applications Applications • VHF/UHF MIX70SC, low-voltage high-frequency amplifiers Features 3.0GHz typ V ce = 3V
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EN2758
Abstract: 2SC3775 2SC4405
Text: Ordering number:EN 2758 No.2758 i 2SC4405 NPN Epitaxial Planar Silicon Transistor SAh YO i UHF, Low-Noise, W ide-Band A m plifier A pplications Applications •UHF, low-noise amplifiers, wide-band amplifiers Features fr=5.0GHz typ • High cutoff frequency
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2SC4405
2SC4405-applied
EN2758
2SC3775
2SC4405
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ac 0624 transistor 17-33
Abstract: uc 1604 0166 415 04 1 060 transistor cq 529
Text: BFP 193 NPN Silicon RF Transistor • For low-noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers. • f j = 8 GHz. F = 1.2 dB at 800 MHz. ESD : Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code
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F1217
OT-143
ac 0624 transistor 17-33
uc 1604
0166 415 04 1 060
transistor cq 529
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2SA1669
Abstract: S121 transistor 2S D 716 marking BS
Text: O rd e rin g n u m b e r: EN 2972 _ 2 S A 1 6 6 9 PNP Epitaxial P lanar Silicon Transistor High-Frequency Amp Applications F e a tu re s •High cutoff frequency : fx = 3.0GHz typ ■High power gain : MAG= 11 dB typ f=0.9GHz ■Small noise figure
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2SA1669
2SA1669
S121
transistor 2S D 716
marking BS
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sma MARKING mp
Abstract: 2SC4365 2SC4402 EN2755
Text: Ordering number : EN 2755 2SC4402 N o.2755 NPN Epitaxial Planar Silicon Transistor sa m y o i VHF/UHF Mixer, Local Oscillator, Low-Voltage Amp Applications Applications • VHF/UHF MIX/OSC, low-voltage high-frequency amplifiers Features • Low-voltage operation
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2SC4402-applied
sma MARKING mp
2SC4365
2SC4402
EN2755
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sot23 a4p
Abstract: transistorS 812 JANTX2N2857 7104F MA4P275S ma4cp104A ODS-1091 MA4CP101B MA4E2503L MA4CS102B
Text: SMQ High Volume Standard PIN Switching Diodes Model Num ber Case S tyle M A4P1250 M A4P1450 1072 1091 V oltage Rating Volts lR = 10 h A 50 50 M axim um C apacitance (PF) 1 = 1 MHz VR = 50 V 1.2 2.5 M inim um C a rrier Lifetim e <^s) M axim um R e sistance
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A4P1250
A4P1450
MA4P4001
A4P4002F
A4P4006F
A4P4301F
A4P4302F
A4P4306F
7001F
A4P7002F
sot23 a4p
transistorS 812
JANTX2N2857
7104F
MA4P275S
ma4cp104A
ODS-1091
MA4CP101B
MA4E2503L
MA4CS102B
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