L7C106DC17 Search Results

Contextual Info: L Q Q IC L7C106 25 6 K x 4 Static RA M D E V IC E S IN C O R P O R A I h . FEATURES DESCRIPTION □ 256K x 4 Static R A M w ith Chip Select Pow erd ow n, O utpu t E nable □ A uto-Pow erdow n Design □ A dvanced C M O S T echnology □ H igh Speed — to 17 ns m axim um

L7C106DC17

Abstract: L7C106DC20 L7C106DC25 L7C106PC17 L7C106PC20 L7C106PC25 CY7C106
Contextual Info: L7C106 L7C106 DEVICES INCORPORATED 256K x 4 Static RAM 256K x 4 Static RAM DEVICES INCORPORATED DESCRIPTION The L7C106 is a high-performance, low-power CMOS static RAM. The storage circuitry is organized as 262,144 words by 4 bits per word. The 4 Data In and Data Out signals share I/O pins.

CY7C106

Abstract: L7C106DC17 L7C106DC20 L7C106DC25 L7C106PC17 L7C106PC20 L7C106PC25
Contextual Info: L7C106 L7C106 DEVICES INCORPORATED 256K x 4 Static RAM 256K x 4 Static RAM DEVICES INCORPORATED FEATURES DESCRIPTION q 256K x 4 Static RAM with Chip Select Powerdown, Output Enable q Auto-Powerdown Design q Advanced CMOS Technology q High Speed — to 17 ns maximum

106E capacitor

Contextual Info: L7C10S L7C1CG 256K x 4 Static RAM □256K x 4 Static RAM with Chip Select Powerdown, Output Enable □Auto-Powerdown Design □Advanced CMOS Technology □High Speed — to 17 ns maximum □Low Power Operation Active: 400 mW typical at 25 ns Standby: 5 mW typical

Contextual Info: L7C106 256K x 4 Static RAM DEVICES INCORPORATED I FEATURES DESCRIPTION □ 256K x 4 Static RAM with Chip Select Powerdown, Output Enable □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 17 ns maximum □ Low Power Operation Active: 400 mW typical at 25 ns

Contextual Info: jjjm ÆmSmmkjjjjjj jmSSm MMMM „„„I L7C106 mm 256K x 4 Static RAM DEVICES INCORPORATED DESCRIPTION FEATURES □ 256K x 4 Static RAM with Chip Select Powerdown, Output Enable □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 17 ns maximum