L791CFB Search Results

L791CFB Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
BUL791 Abstract: No abstract text available Text: BUL791 NPN SILICON POWER TRANSISTOR ● Designed Specifically for High Frequency Electronic Ballasts up to 125 W ● hFE 6 to 22 at VCE = 1 V, IC = 2 A ● Low Power Losses On-state and Switching ● Key Parameters Characterised at High Temperature ● Tight and Reproducible Parametric	Original	PDF	BUL791 O-220 L791CFB L791CRB BUL791
Untitled Abstract: No abstract text available Text: BUL791 NPN SILICON POWER TRANSISTOR Designed Specifically for High Frequency Electronic Ballasts up to 125 W hFE 6 to 22 at VCE = 1 V, IC = 2 A Low Power Losses On-state and Switching Key Parameters Characterised at High Temperature Tight and Reproducible Parametric	Original	PDF	BUL791 O-220 L791CFB L791CRB
BUL791 Abstract: No abstract text available Text: BUL791 NPN SILICON POWER TRANSISTOR Copyright 1997, Power Innovations Limited, UK ● Designed Specifically for High Frequency Electronic Ballasts up to 125 W ● hFE 6 to 22 at VCE = 1 V, IC = 2 A ● Low Power Losses On-state and Switching ● Key Parameters Characterised at High	Original	PDF	BUL791 O-220 BUL791
Untitled Abstract: No abstract text available Text: BUL791 NPN SILICON POWER TRANSISTOR ● Designed Specifically for High Frequency Electronic Ballasts up to 125 W ● hFE 6 to 22 at VCE = 1 V, IC = 2 A ● Low Power Losses On-state and Switching ● Key Parameters Characterised at High Temperature ● Tight and Reproducible Parametric	Original	PDF	BUL791 O-220 L791CFB L791CRB
Untitled Abstract: No abstract text available Text: BUL791 NPN SILICON POWER TRANSISTOR ● Designed Specifically for High Frequency Electronic Ballasts up to 125 W ● hFE 6 to 22 at VCE = 1 V, IC = 2 A ● Low Power Losses On-state and Switching ● Key Parameters Characterised at High Temperature ● Tight and Reproducible Parametric	Original	PDF	BUL791 O-220 L791CFB L791CRB
BUL791 Abstract: No abstract text available Text: BUL791 NPN SILICON POWER TRANSISTOR ● Designed Specifically for High Frequency Electronic Ballasts up to 125 W ● hFE 6 to 22 at VCE = 1 V, IC = 2 A ● Low Power Losses On-state and Switching ● Key Parameters Characterised at High Temperature ● Tight and Reproducible Parametric	Original	PDF	BUL791 O-220 BUL791