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L770CFB Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
BUL770 Contextual Info: BUL770 NPN SILICON POWER TRANSISTOR ● Designed Specifically for High Frequency Electronic Ballasts up to 50 W ● hFE 7 to 21 at VCE = 1 V, IC = 800 mA ● Low Power Losses On-state and Switching ● Key Parameters Characterised at High Temperature ●	Original	BUL770 O-220 BUL770	PDF
BUL770 Contextual Info: BUL770 NPN SILICON POWER TRANSISTOR ● Designed Specifically for High Frequency Electronic Ballasts up to 50 W ● hFE 7 to 21 at VCE = 1 V, IC = 800 mA ● Low Power Losses On-state and Switching ● Key Parameters Characterised at High Temperature ●	Original	BUL770 O-220 L770CFB L770CRB BUL770	PDF
BUL770 Contextual Info: BUL770 NPN SILICON POWER TRANSISTOR Copyright 1997, Power Innovations Limited, UK ● Designed Specifically for High Frequency Electronic Ballasts up to 50 W ● hFE 7 to 21 at VCE = 1 V, IC = 800 mA ● Low Power Losses On-state and Switching ● Key Parameters Characterised at High	Original	BUL770 O-220 BUL770	PDF
Contextual Info: BUL770 NPN SILICON POWER TRANSISTOR ● Designed Specifically for High Frequency Electronic Ballasts up to 50 W ● hFE 7 to 21 at VCE = 1 V, IC = 800 mA ● Low Power Losses On-state and Switching ● Key Parameters Characterised at High Temperature ●	Original	BUL770 O-220 UL770 L770CFB L770CRB	PDF
Contextual Info: BUL770 NPN SILICON POWER TRANSISTOR Designed Specifically for High Frequency Electronic Ballasts up to 50 W TO-220 PACKAGE TOP VIEW hFE 7 to 21 at VCE = 1 V, IC = 800 mA Low Power Losses (On-state and Switching) Key Parameters Characterised at High Temperature	Original	BUL770 O-220 L770CFB L770CRB	PDF
Contextual Info: BUL770 NPN SILICON POWER TRANSISTOR ● Designed Specifically for High Frequency Electronic Ballasts up to 50 W ● hFE 7 to 21 at VCE = 1 V, IC = 800 mA ● Low Power Losses On-state and Switching ● Key Parameters Characterised at High Temperature ●	Original	BUL770 O-220 L770CFB L770CRB	PDF