L5 TRANSISTOR Search Results

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors L2SC1623QLT1G Series Pb-Free packkage is available DEVICE MARKING AND ORDERING INFORMATION 3 Marking Shipping L2SC1623QLT1G L5 3000/Tape&Reel L2SC1623QLT3G L5 10000/Tape&Reel L2SC1623RLT1G L6 3000/Tape&Reel

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors L2SC1623QLT1G Series Pb-Free packkage is available DEVICE MARKING AND ORDERING INFORMATION 3 Marking Shipping L2SC1623QLT1G L5 3000/Tape&Reel L2SC1623QLT3G L5 10000/Tape&Reel L2SC1623RLT1G L6 3000/Tape&Reel

L2SC1623QLT1G

Abstract: L2SC1623RLT1G L2SC1623SLT1G
Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors L2SC1623QLT1G Series Pb-Free packkage is available DEVICE MARKING AND ORDERING INFORMATION 3 Marking Shipping L2SC1623QLT1G L5 3000/Tape&Reel L2SC1623QLT3G L5 10000/Tape&Reel L2SC1623RLT1G L6 3000/Tape&Reel

transistor mark l6

Abstract: KST1623L6 KST1623L3 KST1623L4 KST1623L5 KST1623L7 sot-23 Marking l7 SOT23 MARKING L7 marking L5 sot-23
Contextual Info: KST1623L3/L4/L5/L6/L7 KST1623L3/L4/L5/L6/L7 Amplifier Transistor 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol VCBO Collector-Base Voltage Parameter Value 50 Units

FE5V-TA6

Abstract: FE5V-TB6-L10 IEC60255 FE5V-TB6-L3 IEC60255-5 daigram Yamatake FE5V-TA6-L3 FE5V-TA6-L2 FE5V-TA6-L10
Contextual Info: CATALOG LISTING FE5V-TA6 FE5V-TB6 FE5V-TA6-L2 FE5V-TB6-L2 FE5V-TA6-L3 FE5V-TB6-L3 FE5V-TA6-L5 FE5V-TB6-L5 FE5V-T A6-L10 FE5V-TB6-L10 3. C A B L E ; 0 3 CABLE LENGTH 1m 1m 2m 2m 3m 3m 5m 5m 1 Om 1 Om GRAY 0 . 1 8 mm 2 ( 1 6 /0.1 2 ) x 3 2. M ATERIALS ; CASE

transistor mark l6

Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KST1623L3/L4/L5/L6/L7 AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature

L2SC1623QLT1

Abstract: L2SC1623QLT1G L2SC1623RLT1 L2SC1623RLT1G L2SC1623SLT1 L2SC1623SLT1G sot-23 Marking l7
Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors FEATURE L2SC1623*LT1 ƽHigh Voltage: VCEO = 50 V. ƽEpitaxial planar type. 3 ƽPNP complement: L2SA812 ƽPb-Free Package is available. 1 DEVICE MARKING AND ORDERING INFORMATION Shipping L5 3000/Tape&Reel

IC 30mA

Abstract: BSS65 l5 transistor PNP partmarking 6 Cc BSS65R DSA003680
Contextual Info: SOT23 PNP SILICON PLANAR HIGH SPEED TRANSISTOR ISSUE 2 - SEPTEMBER 1995 ✪ PARTMARKING DETAIL — BSS65 - L1 BSS65R - L5 BSS65 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -12 V Collector-Emitter Voltage VCEO -12

bss65

Contextual Info: SOT23 PNP SILICON PLANAR HIGH SPEED TRANSISTOR ISSUE 2 - SEPTEMBER 1995 PARTMARKING DETAIL — BSS65 Q_ BSS65 - L1 B SS 65R - L5 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO -12 V Collector-E m itter Voltage

transistor A 564

Abstract: L6 TRANSISTOR kst1623 L6 MARKING transistor L7 transistor marking l6
Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KST1623L3/L4/L5/L6/L7 AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25t C h a ra cte ristic Sym b o l Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation

MARKING SA transistor

Abstract: marking code ER transistor KST1623L6
Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KST1623L3/L4/L5/L6/L7 AMPLIFIER TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Rating Symbol Unit Collector-Base Voltage VcBO 50 V Collector-Emitter Voltage VcEO 40 V Emitter-Base Voltage V ebo 5 .0 V Collector Current

k106 transistor

Abstract: IRC643 IRF642 IRF643 IRF642 ge C643
Contextual Info: IRF642,643 l5 116 AMPERES 200,150 VOLTS Rd S ON = 0.22 n FIELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­ ness and reliability.

MOTOROLA ELECTROLYTIC CAPACITOR

Abstract: mrf255 MRF255 equivalent mrf255 mosfet motorola rf Power Transistor MOTOROLA TRANSISTOR 279 MRF255PHT Trimmer ARCO #464 motorola mosfet Trimmer ARCO
Contextual Info: MOTOROLA Order this document by MRF255PHT/D SEMICONDUCTOR TECHNICAL DATA MRF255 PHOTOMASTER The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode CASE 211–11, STYLE 2 RFC1 VGG + + C5 C6 C15 VDD + C16 C17 L5 RF INPUT N1 R2 C4

MN1 transistor

Abstract: BUK436-200B LTO 100 F BUK436-200A
Contextual Info: PHILIPS INTER NAT IONAL L5 E D • 7 1 1 0 fl5 b ODbB^Dl ObS BiPHIN Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

Contextual Info: MOTOROLA SC XSTRS/R 2bE F L 3ti7SS4 D QGTDSm 7 MOTOROLA SEMICONDUCTOR rT'-3>7-l5' TECHNICAL DATA PRELIMINARY DATA DM0 MRH1260PHXV, MRH1260PHS llllt ll PRO C ESSED TO MIL-S-19500 Discrete Military Operation RADIATION TOLERANT TRANSISTOR 60 VOLT, 5 AM PERE

Contextual Info: S0T23 PNP SILICON PLANAR HIGH SPEED SWITCHING TRANSISTOR PARTMARKING DETAILS BSS65 - L1 BSS65R - L5 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE UNIT V CBO -12 V V CEO -12 V Emitter-Base Voltage V EBO -4 V Peak Pulse Current 'c m -200 mA Continuous Collector Current

hall marking code A04

Abstract: M143206EVK differences uc3842a uc3842b toshiba satellite laptop battery pinout 2N3773 audio amplifier diagram toshiba laptop battery pack pinout BC413 motorola transistor sj 5812 M68HC705X16 ABB inverter motor fault code
Contextual Info: Introduction Advanced Digital r i Consumer Products L-l Microcomputer Components [2 Logic: Standard, Special p , and Programmable I-5* Analog and Interface Integrated Circuits Semiconductor r= Components Group L5 Product Literature and r~ Technical Training L”

KST1623L7

Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KST1623L3/L4/L5/L6/L7 AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol Rating Unit 50 40 5.0 100 350 150 V V V mA mW °C VCBO VCEO VEBO IC PC T STG Collector-Base Voltage Collector-Emitter Voltage

RT1N434X

Abstract: RT1P434M RT1P434S TRANSISTOR 1J5 RT1P434C RT1P434T2
Contextual Info: R T - I P434X SERIES For Switching Application Silicon PNP Epitaxial Type DESCRIPTION HT1P434X is OUTLINE ä one chip transistor UNIT mm DRAWING R T1P 434C RT1P434U with b u ilt-in bias resistor.NPN type Is RT1N434X „ L5 0.35 0.$ 2 fl 03: 0JE5 15 Í.5& FEATURE

Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KST1623L3/L4/L5/L6/L7 AMPLIFIER TRANSISTOR S O T-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-B ase Voltage C ollector-E m ltter Voltage Em itter-Base Voltage C ollecto r C urrent C ollecto r D issipation

DRAF143E

Contextual Info: DRAF143E Tentative Total pages page DRAF143E Silicon PNP epitaxial planar type For digital circuits Marking Symbol : L5 Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)

Contextual Info: DRA2143E Silicon PNP epitaxial planar type For digital circuits Complementary to DRC2143E Unit: mm • Features  Low collector-emitter saturation voltage VCE sat  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)  Marking Symbol: L5

2n4033

Contextual Info: 30E D • 7^237 GQ312D7 fi ■ SGS-THOMSON ~T'37-l5 2N4030-2N4031 2N 4032-2N 4033 S G S-THOMSON GENERAL PURPOSE AMPLIFIERS AND SWITCHES DESCRIPTION The 2N4030,2N4031, 2N4032, and 2N4033 are si­ licon planar epitaxial PNP transistors in Jedec TO-39 metal case primarily intended for large signal,

L5 marking

Contextual Info: DATA SHEET SILICON TRANSISTOR HfCTBOM DEVICE FN1L3Z MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR M INI MOLD FEATURES PACKAGE DIMENSIONS • in m illim eters Resistor Built-in T Y P E 2.8 ± 0.2 O—W V 3 R i = 4 . 7 k£2 R1 0.65i8:l5 1.5 •