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    L5 TRANSISTOR Search Results

    L5 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    L5 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors L2SC1623QLT1G Series Pb-Free packkage is available DEVICE MARKING AND ORDERING INFORMATION 3 Marking Shipping L2SC1623QLT1G L5 3000/Tape&Reel L2SC1623QLT3G L5 10000/Tape&Reel L2SC1623RLT1G L6 3000/Tape&Reel


    Original     		L2SC1623QLT1G 3000/Tape L2SC1623QLT3G 10000/Tape L2SC1623RLT1G L2SC1623RLT3G L2SC1623SLT1G PDF

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors L2SC1623QLT1G Series Pb-Free packkage is available DEVICE MARKING AND ORDERING INFORMATION 3 Marking Shipping L2SC1623QLT1G L5 3000/Tape&Reel L2SC1623QLT3G L5 10000/Tape&Reel L2SC1623RLT1G L6 3000/Tape&Reel


    Original     		L2SC1623QLT1G 3000/Tape L2SC1623QLT3G 10000/Tape L2SC1623RLT1G L2SC1623RLT3G L2SC1623SLT1G PDF

    L2SC1623QLT1G

    Abstract: L2SC1623RLT1G L2SC1623SLT1G
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors L2SC1623QLT1G Series Pb-Free packkage is available DEVICE MARKING AND ORDERING INFORMATION 3 Marking Shipping L2SC1623QLT1G L5 3000/Tape&Reel L2SC1623QLT3G L5 10000/Tape&Reel L2SC1623RLT1G L6 3000/Tape&Reel


    Original     		L2SC1623QLT1G 3000/Tape L2SC1623QLT3G 10000/Tape L2SC1623RLT1G L2SC1623RLT3G L2SC1623SLT1G L2SC1623QLT1G L2SC1623RLT1G L2SC1623SLT1G PDF

    transistor mark l6

    Abstract: KST1623L6 KST1623L3 KST1623L4 KST1623L5 KST1623L7 sot-23 Marking l7 SOT23 MARKING L7 marking L5 sot-23
    Text: KST1623L3/L4/L5/L6/L7 KST1623L3/L4/L5/L6/L7 Amplifier Transistor 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 50 Units


    Original     		KST1623L3/L4/L5/L6/L7 OT-23 KST1623L3 transistor mark l6 KST1623L6 KST1623L3 KST1623L4 KST1623L5 KST1623L7 sot-23 Marking l7 SOT23 MARKING L7 marking L5 sot-23 PDF

    L2SC1623QLT1

    Abstract: L2SC1623QLT1G L2SC1623RLT1 L2SC1623RLT1G L2SC1623SLT1 L2SC1623SLT1G sot-23 Marking l7
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors FEATURE L2SC1623*LT1 ƽHigh Voltage: VCEO = 50 V. ƽEpitaxial planar type. 3 ƽPNP complement: L2SA812 ƽPb-Free Package is available. 1 DEVICE MARKING AND ORDERING INFORMATION Shipping L5 3000/Tape&Reel


    Original     		L2SC1623 L2SA812 3000/Tape L2SC1623QLT1 L2SC1623QLT1G L2SC1623QLT1 L2SC1623QLT1G L2SC1623RLT1 L2SC1623RLT1G L2SC1623SLT1 L2SC1623SLT1G sot-23 Marking l7 PDF

    IC 30mA

    Abstract: BSS65 l5 transistor PNP partmarking 6 Cc BSS65R DSA003680
    Text: SOT23 PNP SILICON PLANAR HIGH SPEED TRANSISTOR ISSUE 2 - SEPTEMBER 1995 ✪ PARTMARKING DETAIL — BSS65 - L1 BSS65R - L5 BSS65 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -12 V Collector-Emitter Voltage VCEO -12


    Original     		BSS65 BSS65 BSS65R -10mA, -30mA, IC 30mA l5 transistor PNP partmarking 6 Cc DSA003680 PDF

    MOTOROLA ELECTROLYTIC CAPACITOR

    Abstract: mrf255 MRF255 equivalent mrf255 mosfet motorola rf Power Transistor MOTOROLA TRANSISTOR 279 MRF255PHT Trimmer ARCO #464 motorola mosfet Trimmer ARCO
    Text: MOTOROLA Order this document by MRF255PHT/D SEMICONDUCTOR TECHNICAL DATA MRF255 PHOTOMASTER The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode CASE 211–11, STYLE 2 RFC1 VGG + + C5 C6 C15 VDD + C16 C17 L5 RF INPUT N1 R2 C4


    Original     		MRF255PHT/D MRF255 MRF255 MRF255PHT/D* MOTOROLA ELECTROLYTIC CAPACITOR MRF255 equivalent mrf255 mosfet motorola rf Power Transistor MOTOROLA TRANSISTOR 279 MRF255PHT Trimmer ARCO #464 motorola mosfet Trimmer ARCO PDF

    KST1623L7

    Abstract: No abstract text available
    Text: NPN EPITAXIAL SILICON TRANSISTOR KST1623L3/L4/L5/L6/L7 AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol Rating Unit 50 40 5.0 100 350 150 V V V mA mW °C VCBO VCEO VEBO IC PC T STG Collector-Base Voltage Collector-Emitter Voltage


    Original     		KST1623L3/L4/L5/L6/L7 OT-23 KST1623L3 KST1623L4 KST1623L5 KST1623L6 KST1623L7 PDF

    DRAF143E

    Abstract: No abstract text available
    Text: DRAF143E Tentative Total pages page DRAF143E Silicon PNP epitaxial planar type For digital circuits Marking Symbol : L5 Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)


    Original     		DRAF143E DRAF143E PDF

    Untitled

    Abstract: No abstract text available
    Text: DRA2143E Silicon PNP epitaxial planar type For digital circuits Complementary to DRC2143E Unit: mm • Features  Low collector-emitter saturation voltage VCE sat  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)  Marking Symbol: L5


    Original     		DRA2143E DRC2143E UL-94 DRA2143E0L SC-59A O-236ts. PDF

    FE5V-TA6

    Abstract: FE5V-TB6-L10 IEC60255 FE5V-TB6-L3 IEC60255-5 daigram Yamatake FE5V-TA6-L3 FE5V-TA6-L2 FE5V-TA6-L10
    Text: CATALOG LISTING FE5V-TA6 FE5V-TB6 FE5V-TA6-L2 FE5V-TB6-L2 FE5V-TA6-L3 FE5V-TB6-L3 FE5V-TA6-L5 FE5V-TB6-L5 FE5V-T A6-L10 FE5V-TB6-L10 3. C A B L E ; 0 3 CABLE LENGTH 1m 1m 2m 2m 3m 3m 5m 5m 1 Om 1 Om GRAY 0 . 1 8 mm 2 ( 1 6 /0.1 2 ) x 3 2. M ATERIALS ; CASE


    OCR Scan     		FE5V-TA6-L10 FE5V-TB6-L10 JEOOO-2119 200MQ EN61000-4--2 EN61000-4--3 EN61000-4-6 EN61000-4--4- IEC60255-5 FE5V-TA6 IEC60255 FE5V-TB6-L3 daigram Yamatake FE5V-TA6-L3 FE5V-TA6-L2 PDF

    transistor mark l6

    Abstract: No abstract text available
    Text: NPN EPITAXIAL SILICON TRANSISTOR KST1623L3/L4/L5/L6/L7 AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature


    OCR Scan     		KST1623L3/L4/L5/L6/L7 OT-23 KST1623L3 KST1623L4 KST1623L5 KST1623L6 KST1623L7 transistor mark l6 PDF

    bss65

    Abstract: No abstract text available
    Text: SOT23 PNP SILICON PLANAR HIGH SPEED TRANSISTOR ISSUE 2 - SEPTEMBER 1995 PARTMARKING DETAIL — BSS65 Q_ BSS65 - L1 B SS 65R - L5 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO -12 V Collector-E m itter Voltage


    OCR Scan     		BSS65 BSS65 -10mA, PDF

    transistor A 564

    Abstract: L6 TRANSISTOR kst1623 L6 MARKING transistor L7 transistor marking l6
    Text: NPN EPITAXIAL SILICON TRANSISTOR KST1623L3/L4/L5/L6/L7 AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25t C h a ra cte ristic Sym b o l Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation


    OCR Scan     		KST1623L3/L4/L5/L6/L7 OT-23 KST1623L3 KST1623L4 KST1823L5 KST1623L6 KST1623L7 KST1623L3 KST1623L4 KST1623L5 transistor A 564 L6 TRANSISTOR kst1623 L6 MARKING transistor L7 transistor marking l6 PDF

    k106 transistor

    Abstract: IRC643 IRF642 IRF643 IRF642 ge C643
    Text: IRF642,643 l5 116 AMPERES 200,150 VOLTS Rd S ON = 0.22 n FIELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­ ness and reliability.


    OCR Scan     		IRF642 TC-26I 100ms k106 transistor IRC643 IRF643 IRF642 ge C643 PDF

    MN1 transistor

    Abstract: BUK436-200B LTO 100 F BUK436-200A
    Text: PHILIPS INTER NAT IONAL L5 E D • 7 1 1 0 fl5 b ODbB^Dl ObS BiPHIN Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		7110fl5b BUK436-200A/B BUK436 -200A -200B 71106Eb MN1 transistor BUK436-200B LTO 100 F BUK436-200A PDF

    L6 TRANSISTOR

    Abstract: transistor mark l6 transistor L7 l5 transistor MARKING l7 l4 transistor marking L6 l7 marking code L6 IC KST1623L6
    Text: NPN EPITAXIAL SILICON TRANSISTOR KST1623L3/L4/L5/L6/L7 AMPLIFIER TRANSISTOR ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-Base Voltage C ollector-E m ltter Voltage Em itter-Base Voltage C ollector Current C ollector D issipation Storage Tem perature


    OCR Scan     		KST1623L3/L4/L5/L6/L7 KST1623L3 KST1623L4 KST1623L5 KST1623L6 KST1623L7 L6 TRANSISTOR transistor mark l6 transistor L7 l5 transistor MARKING l7 l4 transistor marking L6 l7 marking code L6 IC KST1623L6 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SC XSTRS/R 2bE F L 3ti7SS4 D QGTDSm 7 MOTOROLA SEMICONDUCTOR rT'-3>7-l5' TECHNICAL DATA PRELIMINARY DATA DM0 MRH1260PHXV, MRH1260PHS llllt ll PRO C ESSED TO MIL-S-19500 Discrete Military Operation RADIATION TOLERANT TRANSISTOR 60 VOLT, 5 AM PERE


    OCR Scan     		MRH1260PHXV, MRH1260PHS MIL-S-19500 10mAdc, 50Vdc MRH630PHXV PDF

    Untitled

    Abstract: No abstract text available
    Text: S0T23 PNP SILICON PLANAR HIGH SPEED SWITCHING TRANSISTOR PARTMARKING DETAILS BSS65 - L1 BSS65R - L5 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE UNIT V CBO -12 V V CEO -12 V Emitter-Base Voltage V EBO -4 V Peak Pulse Current 'c m -200 mA Continuous Collector Current


    OCR Scan     		S0T23 BSS65 BSS65R -10mA, -30mA, -30mA PDF

    hall marking code A04

    Abstract: M143206EVK differences uc3842a uc3842b toshiba satellite laptop battery pinout 2N3773 audio amplifier diagram toshiba laptop battery pack pinout BC413 motorola transistor sj 5812 M68HC705X16 ABB inverter motor fault code
    Text: Introduction Advanced Digital r i Consumer Products L-l Microcomputer Components [2 Logic: Standard, Special p , and Programmable I-5* Analog and Interface Integrated Circuits Semiconductor r= Components Group L5 Product Literature and r~ Technical Training L”


    OCR Scan     		2PHX14226-31 hall marking code A04 M143206EVK differences uc3842a uc3842b toshiba satellite laptop battery pinout 2N3773 audio amplifier diagram toshiba laptop battery pack pinout BC413 motorola transistor sj 5812 M68HC705X16 ABB inverter motor fault code PDF

    RT1N434X

    Abstract: RT1P434M RT1P434S TRANSISTOR 1J5 RT1P434C RT1P434T2
    Text: R T - I P434X SERIES For Switching Application Silicon PNP Epitaxial Type DESCRIPTION HT1P434X is OUTLINE ä one chip transistor UNIT mm DRAWING R T1P 434C RT1P434U with b u ilt-in bias resistor.NPN type Is RT1N434X „ L5 0.35 0.$ 2 fl 03: 0JE5 15 Í.5& FEATURE


    OCR Scan     		RT-IP434X HT1P434X RT1N434X RT1P434T2 RT1P434M PT1P434C RT1N434X RT1P434M RT1P434S TRANSISTOR 1J5 RT1P434C PDF

    Untitled

    Abstract: No abstract text available
    Text: NPN EPITAXIAL SILICON TRANSISTOR KST1623L3/L4/L5/L6/L7 AMPLIFIER TRANSISTOR S O T-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-B ase Voltage C ollector-E m ltter Voltage Em itter-Base Voltage C ollecto r C urrent C ollecto r D issipation


    OCR Scan     		KST1623L3/L4/L5/L6/L7 KST1623O PDF

    2n4033

    Abstract: No abstract text available
    Text: 30E D • 7^237 GQ312D7 fi ■ SGS-THOMSON ~T'37-l5 2N4030-2N4031 2N 4032-2N 4033 S G S-THOMSON GENERAL PURPOSE AMPLIFIERS AND SWITCHES DESCRIPTION The 2N4030,2N4031, 2N4032, and 2N4033 are si­ licon planar epitaxial PNP transistors in Jedec TO-39 metal case primarily intended for large signal,


    OCR Scan     		GQ312D7 37-l5 2N4030-2N4031 4032-2N 2N4030 2N4031, 2N4032, 2N4033 2N4030 2N4032 PDF

    L5 marking

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTOR HfCTBOM DEVICE FN1L3Z MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR M INI MOLD FEATURES PACKAGE DIMENSIONS • in m illim eters Resistor Built-in T Y P E 2.8 ± 0.2 O—W V 3 R i = 4 . 7 k£2 R1 0.65i8:l5 1.5 •


    OCR Scan     		1987M L5 marking PDF