L42 TRANSISTOR Search Results

L42 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

L42 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
transistor L42 Abstract: FD-L42 p76 npn transistor FX-D1P FX-A1P 2mm wafer cable l42 transistor CK100 transistor FD-L41 TRANSISTOR D2102 Text: Glass Sheet Specular Object Detection Fiber SH-72 DS FD-L41/L42 Glass Sheet / Wafer Sensing PARTICULAR USE SENSORS FD-L41/L42 GD CK-100 Die Stroke Counting Metal-sheet Double-feed Detection M Reliable Glass Sheet/ Wafer Detection by Excellent Fixed-focus Reflection	Original	PDF	SH-72 FD-L41/L42 CK-100 FD-L41 FD-L42 FD-L41 transistor L42 p76 npn transistor FX-D1P FX-A1P 2mm wafer cable l42 transistor CK100 transistor TRANSISTOR D2102
DS-L10H Abstract: DS-L24H DS-L10 AP3822K RELAY SOCKET DIAGRAM CK-100 SH-72 DIODE MSDS CK100 transistor DIAGRAM ck100 transistor npn silicon ck100 Text: SERIES Wafer Detection Sensor SH-72 DS FD-L41/L42 Glass Sheet / Wafer Sensing PARTICULAR USE SENSORS DS GD Optimum for Wafer Detection Reliable Fixed-focus Sensing A Variety of Objects The sensor can reliably detect wafers irrespective of their glossiness or color.	Original	PDF	SH-72 FD-L41/L42 CK-100 DS-L24H 2-M30 DS-L10H DS-L24H DS-L10 AP3822K RELAY SOCKET DIAGRAM CK-100 SH-72 DIODE MSDS CK100 transistor DIAGRAM ck100 transistor npn silicon ck100
CK100 transistor Abstract: CK100 transistor DIAGRAM TP514S1 matsushita pnp transistor L42 MATSUSHITA SU SERIES SS TRANSISTOR RELAY 24V FUJI SH72533 Acceleration Sensors for 30G Acceleration Text: Glass Sheet Detection Sensor SH-72 DS FD-L41/L42 Glass Sheet / Wafer Sensing PARTICULAR USE SENSORS SH-72 GD CK-100 Die Stroke Counting Metal-sheet Double-feed Detection M Optimum Sensing Capability for LCD Manufacturing Reliable Detection of Glass Sheets	Original	PDF	SH-72 FD-L41/L42 CK-100 CK100 transistor CK100 transistor DIAGRAM TP514S1 matsushita pnp transistor L42 MATSUSHITA SU SERIES SS TRANSISTOR RELAY 24V FUJI SH72533 Acceleration Sensors for 30G Acceleration
smd transistor l42 Abstract: smd zener diode color code smd zener color codes sensor using 555 timer smd transistor GD smd zener diode code M1 5 pin 12V din wiring diagram metal detector using 555 timer M8 Lock Washer, Stainless Steel smd zener code 22 Text: SERIES Metal-sheet Double-feed Detector SH-72 DS FD-L41/L42 Glass Sheet / Wafer Sensing PARTICULAR USE SENSORS GD GD Double Metal Sheets Reliably Detected Easy Sensitivity Setting with Actual Samples The high-end GD sensing technology reliably detects double feeds of any	Original	PDF	SH-72 FD-L41/L42 CK-100 GD-10) RS-232C smd transistor l42 smd zener diode color code smd zener color codes sensor using 555 timer smd transistor GD smd zener diode code M1 5 pin 12V din wiring diagram metal detector using 555 timer M8 Lock Washer, Stainless Steel smd zener code 22
CK100 transistor DIAGRAM Abstract: CK100 transistor Temperature sensor using plc zener wafer HIF3ba connector M-826 CK-100 DC-12 DC-13 EN50081-2 Text: SERIES Wafer Address Sensor SH-72 DS FD-L41/L42 Glass Sheet / Wafer Sensing PARTICULAR USE SENSORS M Simultaneous Sensing of Wafers in a Cassette Marked Compact Size 14mm 2mm Simultaneous Sensing Sensor Check Possible All the wafers in the cassette can be	Original	PDF	SH-72 FD-L41/L42 M-825 M-826 M-625 HIF3BA-30D-2 CK100 transistor DIAGRAM CK100 transistor Temperature sensor using plc zener wafer HIF3ba connector M-826 CK-100 DC-12 DC-13 EN50081-2
orega transformer SMT4 Abstract: MC44603P THOMSON B2 ferrite material orega flyback transformers orega flyback transformer MC44603 E-4215A orega transformer OREGA smt4 SMT4 former Text: MOTOROLA Order this document by AN1669/D SEMICONDUCTOR APPLICATION NOTE AN1669 MC44603 in a 110 W Output SMPS Application 80-140 Vrms and 180-280 Vrms Mains Voltages by Joël Turchi Power Management Products Operation Application Laboratory, Motorola, Toulouse, France	Original	PDF	AN1669/D AN1669 MC44603 MC44603. orega transformer SMT4 MC44603P THOMSON B2 ferrite material orega flyback transformers orega flyback transformer E-4215A orega transformer OREGA smt4 SMT4 former
power BJT DARLINGTON PAIR NPN Abstract: lcd inverter n mosfet cross reference BAT54A RF NPN Power BJT 100v l43 transistor transistor L42 ZBAT54C ZBAT54A Digital Transistors Cross Reference transistors diodes ics cross reference Text: BAT54 SERIES SOT23 SILICON EPITAXIAL SCHOTTKY BARRIER DIODES ISSUE 1 SEPTEMBER 1995 1 BAT54 SERIES ✪ 1 1 1 TYPICAL CHARACTERISTICS 1 10m 100m 3 1m 10m +125°C +85°C +25°C 1m +125°C 3 +85°C 100µ 10µ 100µ 10µ 0.15 0.3 0.45 0.6 Forward Voltage VF V	Original	PDF	BAT54 BAT54A BAT54S BAT54C 05-Oct-2010 1280x768px. power BJT DARLINGTON PAIR NPN lcd inverter n mosfet cross reference BAT54A RF NPN Power BJT 100v l43 transistor transistor L42 ZBAT54C ZBAT54A Digital Transistors Cross Reference transistors diodes ics cross reference
marking l33 Abstract: transistor L44 L33 TRANSISTOR BCP56 LM7805 PTFA261702E RO4350 L42 marking transistor Text: PTFA261702E Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 170 W, 2500 – 2700 MHz Description The PTFA261702E is a 170-watt LDMOS FET designed for WiMAX power amplifier applications in the 2500 to 2700 MHz band. Features	Original	PDF	PTFA261702E PTFA261702E 170-watt marking l33 transistor L44 L33 TRANSISTOR BCP56 LM7805 RO4350 L42 marking transistor
l35 CAPacitor Abstract: 1800 ldmos marking l33 BCP56 LM7805 PTFA261702E RO4350 L42 marking transistor ATC Semiconductor Devices Text: PTFA261702E Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 170 W, 2500 – 2700 MHz Description The PTFA261702E is a 170-watt LDMOS FET designed for WiMAX power amplifier applications in the 2500 to 2700 MHz band. Features	Original	PDF	PTFA261702E PTFA261702E 170-watt l35 CAPacitor 1800 ldmos marking l33 BCP56 LM7805 RO4350 L42 marking transistor ATC Semiconductor Devices
6n60c Abstract: transistor 13005 electronic ballast 36W mosfet 6n60c 6n60c ic 13005 ballast Electronic ballast 36W using 13005 transistor transistor 9014 transistor Electronic ballast 13005 ELECTRONIC BALLAST 6 LAMP SCHEMATIC Text: BCD Semi Ltd Co. AP1661 2*36W ballast Demo Board Manual Content: 1. Description 2. Specifications 3. Schematics of the Demo Board 4. PCB Layout 5. Photo View of the Demo Board 6. PCB Dimensions 7. BOM 8. Test Result PROPRIETARY & CONFIDENTIAL ADVANCED ANALOG CIRCUITS CORPORATION	Original	PDF	AP1661 8-79W 320mA 324mA 6n60c transistor 13005 electronic ballast 36W mosfet 6n60c 6n60c ic 13005 ballast Electronic ballast 36W using 13005 transistor transistor 9014 transistor Electronic ballast 13005 ELECTRONIC BALLAST 6 LAMP SCHEMATIC
NK60Z Abstract: 2907 TRANSISTOR PNP TRANSISTOR REPLACEMENT ECG transistor P43 smd transistor P45 smd transistor SMD p81 smd diode H05 smd transistor l42 N50C3 2222A SMD Text: DN-H05 Design Note 56W Off-line, 120VAC with PFC, 160V, 350mA Load, Dimmer Switch Compatible LED Driver Speciﬁcations AC line voltage 100 - 135 VAC LED string voltage 20 – 160V LED current 350mA Switching frequency 63kHz - @ VOUT = 160VDC 92kHz - @ VOUT = 20VDC	Original	PDF	DN-H05 120VAC 350mA 350mA 63kHz 160VDC 92kHz 20VDC 180VDC NK60Z 2907 TRANSISTOR PNP TRANSISTOR REPLACEMENT ECG transistor P43 smd transistor P45 smd transistor SMD p81 smd diode H05 smd transistor l42 N50C3 2222A SMD
MC44603P Abstract: THOMSON B2 ferrite material orega transformer SMT4 flyback transformer construction ferrite thomson lcc orega flyback transformer mc44603 orega flyback transformers OREGA smt4 MTP6N60E equivalent Text: AN1669/D MC44603 in a 110 W Output SMPS Application 80-140 Vrms and 180-280 Vrms Mains Voltages Prepared by: Joël Turchi Power Management Products Operation Application Laboratory, Motorola, Toulouse, France INTRODUCTION September, 2000 − Rev. 0 APPLICATION NOTE	Original	PDF	AN1669/D MC44603 r14525 MC44603P THOMSON B2 ferrite material orega transformer SMT4 flyback transformer construction ferrite thomson lcc orega flyback transformer orega flyback transformers OREGA smt4 MTP6N60E equivalent
SMD Transistor t08 Abstract: transistor SMD t07 transistor NPN C124 transistor SMD t06 transistor L43 SMD transistor SMD t08 transistor SMD t06 47 SMD TRANSISTOR l38 transistor NPN c115 transistor SMD t06 19 Text: This Document can not be used without Samsung’s authorization. 6 Docking Exploded View and Parts List 6-1 UNIT_DOCK_BOTTOM_ASSY Sens Q 25 6-1 6 Docking Exploded View and Parts List NO 6-2 PART NAME This Document can not be used without Samsung’s authorization.	Original	PDF	BA61-00728A BA66-00044A BA66-00043A BA72-00679A BA72-00678A BA72-00663A BA72-00662A PGB0010603MR 100PF 220PF SMD Transistor t08 transistor SMD t07 transistor NPN C124 transistor SMD t06 transistor L43 SMD transistor SMD t08 transistor SMD t06 47 SMD TRANSISTOR l38 transistor NPN c115 transistor SMD t06 19
transistor L43 SMD Abstract: transistor NPN C124 samsung u2 cable smd diode L43 c124 npn transistor SMD t06 47 transistor SMD t08 transistor SMD t07 transistor t07 DIODE C136 Text: This Document can not be used without Samsung’s authorization. 6 Docking Exploded View and Parts List 6-1 UNIT_DOCK_BOTTOM_ASSY Sens Q 20 6-1 6 Docking Exploded View and Parts List NO 6-2 PART NAME This Document can not be used without Samsung’s authorization.	Original	PDF	BA61-00728A BA66-00044A BA66-00043A BA72-00679A BA72-00678A BA72-00663A BA72-00662A PGB0010603MR 100PF 220PF transistor L43 SMD transistor NPN C124 samsung u2 cable smd diode L43 c124 npn transistor SMD t06 47 transistor SMD t08 transistor SMD t07 transistor t07 DIODE C136

transistor 2TH Abstract: No abstract text available Text: KSC838 NPN EPITAXIAL SILICON TRANSISTOR FM RADIO RF AMP, MIX, CONV, OSC, IF AMP • High Current Gain Bandwidth Product fT-250MHz Typ ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Rating Unit VcBO VcEO VeOO lc Pc Tj Tstg 35 30 4 30 250 150 -5 5 -1 5 0	OCR Scan	PDF	KSC838 fT-250MHz transistor 2TH
L42 marking transistor Abstract: No abstract text available Text: KSR2108 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In SO T-23 • Switching Circuii, Inverter, interface circuit Driver circuit • Built in bias Resistor (^ = 4 7 X 0 , Rj=22Ki!) • Com plement to KSR1108 ABSOLUTE MAXIMUM RATINGS (Ta=25°C)	OCR Scan	PDF	KSR2108 KSR1108 L42 marking transistor
Untitled Abstract: No abstract text available Text: 2N3905/3906 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR TO-92 • Collector-Em itter Voltage: V Ceo =40V • C o llector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage	OCR Scan	PDF	2N3905/3906 625mW 2N3906 300//s, 7Tb414E 0D2S02M
s1854 Abstract: toshiba f5d BRIDGE RECTIFIER TOSHIBA 3B F0R3D S6565G BRIDGE RECTIFIER TOSHIBA 3b 4 f0r3b 4G4B44 1D4B42 3529A Text: — wtmmmmmmmm TOSHIBA 9. Power Supply Systems 9-1 4 0 0 ~ 5 0 0 V Switching Transistors ^ ^ \P a c k a g e lC A ^ 2 5 \ T 0 -2 2 0 A B TO -2 20 IS T O -3 P II] TO-3P (N) TO-3P (L i - 2SC2552 2SC3560/1 # 2 S K 5 2 7 /8 # - - 2SC2553 S 3529A # 2 S K 5 3 0 /1 #	OCR Scan	PDF	2SC3560/1 2SC3497 2SC3626 2SC3562 2SC2552 2SC2553 2SC3625 2SC2555 2SC3306 2SK693# s1854 toshiba f5d BRIDGE RECTIFIER TOSHIBA 3B F0R3D S6565G BRIDGE RECTIFIER TOSHIBA 3b 4 f0r3b 4G4B44 1D4B42 3529A
flyback transformer construction Abstract: THOMSON B2 ferrite material MOSFET IRF 540 AS A SWITCH AN4001 orega transformer SMT4 E-4215A Thomson capacitors lcc 28V to 110V transformer c4460 MC44603 Text: MOTOROLA SEMICONDUCTOR APPLICATION NOTE Order this document as AN4001/D A N 4 0 0 1 /D MC44603 in a 110W output SMPS application 80-140Vrms and 180-280Vrms mains voltages by Joel Turchi Power Management Products Operation Application Laboratory, Motorola, Toulouse, France	OCR Scan	PDF	AN4001/D MC44603 80-140Vrms 180-280Vrms 110Vrms 220Vrms MC44603. XM41-2447 flyback transformer construction THOMSON B2 ferrite material MOSFET IRF 540 AS A SWITCH AN4001 orega transformer SMT4 E-4215A Thomson capacitors lcc 28V to 110V transformer c4460
Untitled Abstract: No abstract text available Text: s c s -th o m s o im r r : * 7 M , l f i s i M » IL IÊ ÏT M D S L F 2 5 1 - L F 3 5 1 W IDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS LOW POWER CONSUMPTION WIDE COMMON-MODE (UP TO Vcc+ AND DIFFERENTIAL VOLTAGE RANGE LOW INPUT BIAS AND OFFSET CURRENT	OCR Scan	PDF
UD1001 Abstract: FT4017 transistor A431 MA3232 CA3036 UC850 DM01B DM02B UC340 L0NA Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I	OCR Scan	PDF	NPN110. BVCB0-80V BVCE0-60V BVEBO-15V BVCBO-100V BVCEO-80V BVEB0-15V BVCB0-60V BVCE0-40V UD1001 FT4017 transistor A431 MA3232 CA3036 UC850 DM01B DM02B UC340 L0NA
4w-2w hybrid Abstract: L4D* transistor TS544-A874 MB4752A 440J2 Text: TS544-A874 April 1987 MB4752A F U J IT S U J~ SUBSCRIBER LINE INTERFACE IC " The Fujitsu MB4752A is designed for PBX Private Branch Exchange , it has battery feed, supervision and 4-wire to 2-wire conversion functions. Battery Feed mode can be established to 200ftx 2, 440ft x 2 constant feeding resistor,	OCR Scan	PDF	TS544-A874 MB4752A 200ft 440ft 440S2) 01/fF 4w-2w hybrid L4D* transistor TS544-A874 440J2
transistor A431 Abstract: MA3232 UD1001 A431 transistor FT4017 MT42a 20C26 DM01B SAC42 L29a Text: SYMBOLS & CODES EXPLAINED S YMBOL S & CODES C O M M O N TO MO RE T H A N ONE T E C H N I C A L SECTI ON LIN E No. ▼ — New Type + — Revised Specifications # - Non-JEDEC type manufactured outside u :s .a . TYPE No. t Switching type, also listed in Section 12	OCR Scan	PDF	BVCB0-80V BVCE0-60V BVEBO-15V BVCBO-100V BVCEO-80V BVEB0-15V BVCB0-60V BVCE0-40V MHM2101 transistor A431 MA3232 UD1001 A431 transistor FT4017 MT42a 20C26 DM01B SAC42 L29a
transistor k1502 Abstract: dr 25 germanium diode DIODE 10N 40D 2N3379 CA3036 K1502 K1501 2N5513 darlington 12V 6.2A P1029 Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I	OCR Scan	PDF	NPN110. BVCB0-80V BVCE0-60V BVEBO-15V BVCBO-100V BVCEO-80V BVEB0-15V BVCB0-60V BVCE0-40V transistor k1502 dr 25 germanium diode DIODE 10N 40D 2N3379 CA3036 K1502 K1501 2N5513 darlington 12V 6.2A P1029

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L42 TRANSISTOR Search Results

L42 TRANSISTOR Result Highlights (5)

L42 TRANSISTOR Datasheets Context Search

transistor L42

DS-L10H

CK100 transistor

smd transistor l42

CK100 transistor DIAGRAM

orega transformer SMT4

power BJT DARLINGTON PAIR NPN

marking l33

l35 CAPacitor

6n60c

NK60Z

MC44603P

SMD Transistor t08

transistor L43 SMD

transistor 2TH

L42 marking transistor

Untitled

s1854

flyback transformer construction

Untitled

UD1001

4w-2w hybrid

transistor A431

transistor k1502