L3B7255 Search Results

transistor 3005 2

Abstract: SILICON SMALL-SIGNAL DICE MPSH24 MPSH34 MPS-H34 transistor 3005
Contextual Info: MOTOROL A SC -CDIODES/OPTO} f 6367255 MOTOROLA SC 34 Ï F| L3b7255 □□3005 3 3 <D I O D E S / O P T O > 34C 38023 D 7- J /-/7 SILICON SMALL-SIGNAL TRANSISTOR DICE continued) MPSHC24 DIE NO. — npn LINE SOURCE — DMB203 (I This die provides performance similar to that of the following device types:

MPQ2369

Abstract: DDT323S DDT32
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Sw itching Transistor MPQ2369 NPN Silicon M otorola Preferred D evice fui ftp Hai Rii Eoi m TI L r\ i NPN [y\J r v i r v i LU LaJ LaJ U l l l j li l i l C A S E 646-06, S T Y L E 1 TO-116 MAXIM UM RATING S Rating

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Am plifier Transistors NPN Silicon MMBT6428LT1 MMBT6429LT1 C0LLE CT0R 3 EMITTER 1 2 M AXIMUM RATINGS Rating Symbol 6428LT1 6429LT1 Unit C ollector-Em itter Voltage VCEO 50 45 Vdc C ollector-B ase Voltage VCBO 60 55 Vdc

mpq2222 motorola

Abstract: transistor 2222a q2222 MPQ2222A ip 2222A 2222A MOTOROLA
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad General Purpose Transistors MPQ2222 MPQ2222A* [u i iip [ip n il nói m i t i NPN Silicon L /S J lf \ i ‘ Motorola Preferred Device NPN r v i. r v i Lil tU 111 UJ LU [ü LÜ MAXIMUM RATINGS Rating MPQ2222A Unit 40

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBTA20LT1 General Purpose A m plifier NPN Silicon COLLECTOR 1 BASE 4 2 EMITTER CASE 3 1 8 -0 8 , STYLE 6 S O T -2 3 TO -236A B MAXIMUM RATINGS Symbol Value C ollector-Em itter Voltage VCEO 40 Vdc E m itter-Base Voltage

Contextual Info: MOTOROLA Order this document by MBRB20200CT/D SEMICONDUCTOR TECHNICAL DATA SW ITCHMODE Power MBRB20200CT Dual Schottky Rectifier . . . using Schottky Barrier technology with a platinum barrier metal. This sta te -o f-the -a rt device is designed for use in high frequency switching power

1N4742A 12 volt zener diode

Abstract: MZPY12 MZPY47 BZX85C51 MOT zener diode, t2 diode zener 1n4742a MZPY24 MZPY15 MZPY13 MZPY33
Contextual Info: riOTOROLA SC D I O D E S / O P T O D b4E • b3b75SS 00fl5L*CH b7S ■ SECTION 4.2.4 DATA SHEETS ZENER VOLTAGE REGULATOR DIODES — continued Section 4.2.4.1 Axial Leaded — continued SECTION 4.2.4.1.2 1-1.3 WATT DO-41 GLASS MULTIPLE PACKAGE QUANTITY (MPQ)

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M M T10V275* M M T10V400* Advance Information •Motorola preferred devices Thyristor Surge Suppressors High Voltage Bidirectional TVS Devices BIDIRECTIONAL THYRISTOR SURGE SUPPRESSORS 25 WATTS STEADY STATE These transient voltage suppression TVS devices prevent overvoltage

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N-Channel — Enhancement VN0300L 3 DRAIN Motorola Preferred Device 1 SOURCE MAXIMUM RATINGS Symbol Value Unt Drain-Source Voltage VDSS 60 V Draln-Gate Voltage VDGR 60 V Gate-Source Voltage - Continuous