Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors L2SC5343QLT1G NPN Silicon Series FEATURE ƽ Excellent 3 hFE linearity :hFE 2 =100(Typ) at VCE=6V,IC=150Ma 1 :hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ). 2 z Low noise:NF=1Db(Typ).at f=1KHz. SOT– 23 ƽ We declare that the material of product compliance with RoHS requirements.
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Original
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L2SC5343QLT1G
150Ma
3000/Tape
L2SC5343QLT3G
10000/Tape
L2SC5343RLT1G
L2SC5343RLT3G
|
PDF
|
Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors L2SC5343QLT1G NPN Silicon Series FEATURE ƽ Excellent hFE linearity 3 :hFE 2 =100(Typ) at VCE=6V,IC=150Ma 1 :hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ). 2 z Low noise:NF=1Db(Typ).at f=1KHz. SOT– 23 ƽ We declare that the material of product compliance with RoHS requirements.
|
Original
|
L2SC5343QLT1G
150Ma
3000/Tape
L2SC5343QLT3G
10000/Tape
L2SC5343RLT1G
L2SC5343RLT3G
|
PDF
|
Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors Series NPN Silicon S-L2SC5343QLT1G FEATURE ƽ Excellent L2SC5343QLT1G Series hFE linearity :hFE 2 =100(Typ) at VCE=6V,IC=150Ma 3 :hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ). z Low noise:NF=1Db(Typ).at f=1KHz.
|
Original
|
L2SC5343QLT1G
S-L2SC5343QLT1G
150Ma
AEC-Q101
L2SC5343QLT1G
3000/Tape
L2SC5343QLT3G
10000/Tape
|
PDF
|
Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors Series NPN Silicon S-L2SC5343QLT1G FEATURE ƽ Excellent L2SC5343QLT1G Series hFE linearity :hFE 2 =100(Typ) at VCE=6V,IC=150Ma 3 :hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ). z Low noise:NF=1Db(Typ).at f=1KHz.
|
Original
|
L2SC5343QLT1G
S-L2SC5343QLT1G
150Ma
AEC-Q101
L2SC5343QLT3G
S-L2SC5343QLT3G
3000/Tape
10000/Tape
|
PDF
|
marking 7S
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors L2SC5343QLT1G NPN Silicon Series FEATURE ƽ Excellent 3 hFE linearity :hFE 2 =100(Typ) at VCE=6V,IC=150Ma 1 :hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ). 2 z Low noise:NF=1Db(Typ).at f=1KHz. SOT– 23 ƽ We declare that the material of product compliance with RoHS requirements.
|
Original
|
L2SC5343QLT1G
150Ma
3000/Tape
L2SC5343QLT3G
10000/Tape
L2SC5343RLT1G
L2SC5343RLT3G
marking 7S
|
PDF
|
Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors L2SC5343QLT1G Series S-L2SC5343QLT1G NPN Silicon FEATURE ƽ Excellent Series hFE linearity :hFE 2 =100(Typ) at VCE=6V,IC=150Ma 3 :hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ). 1 z Low noise:NF=1Db(Typ).at f=1KHz.
|
Original
|
L2SC5343QLT1G
S-L2SC5343QLT1G
150Ma
AEC-Q101
L2SC5343QLT3G
S-L2SC5343QLT3G
L2SC5343RLT1G
S-L2SC5343RLT1G
|
PDF
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