L2SA1235FLT1G Search Results
L2SA1235FLT1G Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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marking A5FContextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistor DESCRIPTION L2SA1365FLT1G is a mini package silicon PNP epitaxial transistor, it is designed for low frequency voltage application. L2SA1235FLT1G S-L2SA1235FLT1G . FEATURE ● Small collector to emitter saturation voltage. |
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L2SA1365FLT1G L2SA1235FLT1G S-L2SA1235FLT1G AEC-Q101 OT-23 marking A5F | |
EIA-556-A
Abstract: sot-23 marking 9D transistor marking 9D NF 723 L2SA1365 marking A5F application of IC 723 EIA-556A H SOD723
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L2SA1235FLT1G L2SA1365FLT1G 195mm 150mm 10Reel/Inner 30KPCS/Inner 3000PCS/Reel 40KPCS/Inner OT-723 EIA-556-A sot-23 marking 9D transistor marking 9D NF 723 L2SA1365 marking A5F application of IC 723 EIA-556A H SOD723 | |
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Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistor L2SA1235FLT1G DESCRIPTION L2SA1365FLT1G is a mini package silicon PNP epitaxial transistor, it is designed for low frequency voltage application. . FEATURE 3 ● Small collector to emitter saturation voltage. |
Original |
L2SA1235FLT1G L2SA1365FLT1G OT-23 |