construction of varactor diode
Abstract: No abstract text available
Text: MC12147 Low Power Voltage Controlled Oscillator Buffer The MC12147 is intended for applications requiring high frequency signal generation up to 1300 MHz. An external tank circuit is used to determine the desired frequency of operation. The VCO is realized using an
|
Original
|
MC12147
MC12202
MC12149
MC12147
200ms
909MHz
1220MHz
construction of varactor diode
|
PDF
|
mc12149
Abstract: No abstract text available
Text: Low Power Voltage Controlled Oscillator Buffer The MC12149 is intended for applications requiring high frequency signal generation up to 1300 MHz. An external tank circuit is used to determine the desired frequency of operation. The VCO is realized using an
|
Original
|
MC12149
MC12202
MC12149
10MHz
200ms
909MHz
|
PDF
|
ML12149-5P
Abstract: ML12210 MA393 MC12149 MC12149D ML12149 LT 725
Text: ML12149 Low Power Voltage Controlled Oscillator Buffer Legacy Device: Motorola MC12149 The ML12149 is intended for applications requiring high frequency signal generation up to 1300 MHz. An external tank circuit is used to determine the desired frequency of operation. The VCO
|
Original
|
ML12149
MC12149
ML12149
ML12210
ML12149-5P
MA393
MC12149
MC12149D
LT 725
|
PDF
|
construction of varactor diode
Abstract: MA393 varactor diode high frequency MC12147 MC12147D MC12202
Text: Order this document by MC12147/D MC12147 Low Power Voltage Controlled Oscillator Buffer The MC12147 is intended for applications requiring high frequency signal generation up to 1300 MHz. An external tank circuit is used to determine the desired frequency of operation. The VCO is realized using an
|
Original
|
MC12147/D
MC12147
MC12147
MC12202
construction of varactor diode
MA393
varactor diode high frequency
MC12147D
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ML12149 Low Power Voltage Controlled Oscillator Buffer Legacy Device: Motorola MC12149 The ML12149 is intended for applications requiring high frequency signal generation up to 1300 MHz. An external tank circuit is used to determine the desired frequency of operation. The VCO
|
Original
|
ML12149
MC12149
ML12149
ML12210
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ML12149 Low Power Voltage Controlled Oscillator Buffer Legacy Device: Motorola MC12149 The ML12149 is intended for applications requiring high frequency signal generation up to 1300 MHz. An external tank circuit is used to determine the desired frequency of operation. The VCO
|
Original
|
ML12149
MC12149
ML12210
|
PDF
|
MA393
Abstract: MC12147 MC12147D MC12149 MC12202 motorola varactor
Text: Order this document by MC12147/D MC12147 Low Power Voltage Controlled Oscillator Buffer The MC12147 is intended for applications requiring high frequency signal generation up to 1300 MHz. An external tank circuit is used to determine the desired frequency of operation. The VCO is realized using an
|
Original
|
MC12147/D
MC12147
MC12147
MC12202
MA393
MC12147D
MC12149
motorola varactor
|
PDF
|
ML12149-5P
Abstract: LANSDALE SEMICONDUCTOR MA393 MC12149 MC12149D ML12149 ML12210 so8 Wire bond
Text: ML12149 Low Power Voltage Controlled Oscillator Buffer Legacy Device: Motorola MC12149 The ML12149 is intended for applications requiring high frequency signal generation up to 1300 MHz. An external tank circuit is used to determine the desired frequency of operation. The VCO
|
Original
|
ML12149
MC12149
ML12149
ML12210
ML12149-5P
LANSDALE SEMICONDUCTOR
MA393
MC12149
MC12149D
so8 Wire bond
|
PDF
|
MA393
Abstract: MC12147 MC12147D MC12149 MC12202
Text: MC12147 Low Power Voltage Controlled Oscillator Buffer The MC12147 is intended for applications requiring high frequency signal generation up to 1300 MHz. An external tank circuit is used to determine the desired frequency of operation. The VCO is realized using an
|
Original
|
MC12147
MC12147
MC12202
MC12147/D
MA393
MC12147D
MC12149
|
PDF
|
k1 M 1208 Q switch
Abstract: mc12149 csr rf construction of varactor diode MA393 MC12149D MC12149SD MC12202 Nippon capacitors
Text: Order this document by MC12149/D Low Power Voltage Controlled Oscillator Buffer The MC12149 is intended for applications requiring high frequency signal generation up to 1300 MHz. An external tank circuit is used to determine the desired frequency of operation. The VCO is realized using an
|
Original
|
MC12149/D
MC12149
MC12202
MC12149
k1 M 1208 Q switch
csr rf
construction of varactor diode
MA393
MC12149D
MC12149SD
Nippon capacitors
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor, Inc.Order this document by MC12147/D MC12147 Low Power Voltage Controlled Oscillator Buffer LOW POWER VOLTAGE CONTROLLED OSCILLATOR BUFFER SEMICONDUCTOR TECHNICAL DATA DEVICE TO BE PHASED OUT. ARCHIVE INFORMATION ARCHIVE INFORMATION
|
Original
|
MC12147/D
MC12147
MC12147
MC12202
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Low Power Voltage Controlled Oscillator Buffer The MC12147 is intended for applications requiring high frequency signal generation up to 1300MHz. An external tank circuit is used to determine the desired frequency of operation. The VCO is realized using
|
Original
|
MC12147
1300MHz.
MC12202
BR1334
MC12147/D*
MC12147/D
|
PDF
|
Qb 742
Abstract: MA393 MC12149 MC12149D MC12202
Text: Order this document by MC12149/D Low Power Voltage Controlled Oscillator Buffer The MC12149 is intended for applications requiring high frequency signal generation up to 1300 MHz. An external tank circuit is used to determine the desired frequency of operation. The VCO is realized using an
|
Original
|
MC12149/D
MC12149
MC12202
MC12149
Qb 742
MA393
MC12149D
|
PDF
|
MA393
Abstract: MC12149 MC12149D MC12202 L2B LP LP
Text: Freescale Semiconductor, Inc.Order this document by MC12149/D MC12149 Low Power Voltage Controlled Oscillator Buffer LOW POWER VOLTAGE CONTROLLED OSCILLATOR BUFFER SEMICONDUCTOR TECHNICAL DATA NOTE: The MC12149 is NOT suitable as a crystal oscillator. •
|
Original
|
MC12149/D
MC12149
MC12149
MC12202
MA393
MC12149D
L2B LP LP
|
PDF
|
|
|
construction of varactor diode
Abstract: MA393 MC12147 MC12147D MC12147SD MC12202 Nippon capacitors
Text: Order this document by MC12147/D MC12147 Low Power Voltage Controlled Oscillator Buffer The MC12147 is intended for applications requiring high frequency signal generation up to 1300 MHz. An external tank circuit is used to determine the desired frequency of operation. The VCO is realized using an
|
Original
|
MC12147/D
MC12147
MC12147
MC12202
construction of varactor diode
MA393
MC12147D
MC12147SD
Nippon capacitors
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor, Inc.Order this document by MC12149/D MC12149 Low Power Voltage Controlled Oscillator Buffer LOW POWER VOLTAGE CONTROLLED OSCILLATOR BUFFER SEMICONDUCTOR TECHNICAL DATA NOTE: The MC12149 is NOT suitable as a crystal oscillator. •
|
Original
|
MC12149/D
MC12149
MC12149
MC12202
|
PDF
|
MC12149
Abstract: MA393 MC12149D MC12202
Text: Order this document by MC12149/D Low Power Voltage Controlled Oscillator Buffer The MC12149 is intended for applications requiring high frequency signal generation up to 1300 MHz. An external tank circuit is used to determine the desired frequency of operation. The VCO is realized using an
|
Original
|
MC12149/D
MC12149
MC12202
MC12149
MA393
MC12149D
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Low Power Voltage Controlled Oscillator Buffer The MC12149 is intended for applications requiring high frequency signal generation up to 1300MHz. An external tank circuit is used to determine the desired frequency of operation. The VCO is realized using
|
Original
|
MC12149
1300MHz.
MC12202
MC12149/D*
MC12149/D
DL140
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2 ö l2b 72 DOQMböB bT7 Dialîght Surface Mount LED, Bicolor TAPING SPECIFICATIONS rear side of tape PART NO. 597-7701-2xx LED COLOR Red/Green [ 079] |-— [.1S7] •<h Benefits • Compatible with automatic placement equipment • Compatible with infrared
|
OCR Scan
|
597-7701-2xx
597-7701-2xx
EIA-481-1
MIL-STD-202E,
|
PDF
|
P06V
Abstract: D024 KSK161
Text: KSK161 SILICON N-CHANNEL JUNCTION FET _ i- FM TUNER VHF AMPLIFIER • NF - 2.S dB TYP •|Yra|- 9.0 mS (TYP) ABSOLUTE MAXIMUM RATINGS (T.-25 °C) Characteristic Symbol Gate-Drain Voltage Gate Current Power Dissipation Junction Temperature
|
OCR Scan
|
KSK161
O-92S
00E4flbb
P06V
D024
KSK161
|
PDF
|
philips tea 1091
Abstract: TEA 1091 TEA1112AT TEA1112 TEA1112A TEA1112T
Text: Philips Semiconductors Preliminary specification Low voltage versatile telephone transmission circuits with dialler interface TEA1112; TEA1112A FEATURES GENERAL DESCRIPTION • Low DC line voltage; operates down to 1.6 V excluding polarity guard The TEA1112; TEA1112A are bipolar integrated circuits
|
OCR Scan
|
TEA1112
TEA1112A
TEA1112)
TEA1112A)
711002b
00C17M57
philips tea 1091
TEA 1091
TEA1112AT
TEA1112A
TEA1112T
|
PDF
|
T3D 67 diode
Abstract: T3D 77 diode 74ABT821 T3D 46 diode T3D DIODE clamp SA00223 t3d 62 diode
Text: Philips Semiconductors Product specification 10-bit D-type flip-flop; positive-edge trigger 3-State _ . OTOOi 74ABT821 extra data width for wider data/address paths of buses carrying parity. FEATURES • High speed parallel registers with positive edge-triggered D-type
|
OCR Scan
|
10-bit
74ABT821
64mA/-32mA
500mA
sot355-1
MO-153AD
1995Sep06
11Dfl2b
T3D 67 diode
T3D 77 diode
T3D 46 diode
T3D DIODE clamp
SA00223
t3d 62 diode
|
PDF
|
ma7805
Abstract: 2SC631 2SC632 2N3406 2SC634 FV918 2N1082 a608 NS3039 2SC402A
Text: SYMBOLS & CODES EXPLAINED IN T Y P E No. CROSS-INDEX & TE C H N IC A L SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D .A .T.A .) is an integral part of the type number (in Type No. Cross Index,
|
OCR Scan
|
Voff-200uV.
NS8000
NS8003
OC740
Pt-500mW;
BVCBO-12V;
50-1500KC.
Voff-100uV;
0-50KC.
ma7805
2SC631
2SC632
2N3406
2SC634
FV918
2N1082
a608
NS3039
2SC402A
|
PDF
|
T3D DIODE clamp
Abstract: T3D 79 diode T3D DIODE t3d 62 diode Diode T3D 54 T3D 67 diode T3D 54 DIODE Diode T3D 08 T3D 46 diode T3D 45 diode
Text: Philips Semiconductors Product specification 10-bit D-type flip-flop; positive-edge trigger 3-State _ . OTOOi 74ABT821 extra data width for wider data/address paths of buses carrying parity. FEATURES • High speed parallel registers with positive edge-triggered D-type
|
OCR Scan
|
10-bit
74ABT821
64mA/-32mA
500mA
74ABT821
sot355-1
mo-153ad
1995Sep06
11Dfl2b
T3D DIODE clamp
T3D 79 diode
T3D DIODE
t3d 62 diode
Diode T3D 54
T3D 67 diode
T3D 54 DIODE
Diode T3D 08
T3D 46 diode
T3D 45 diode
|
PDF
|
